NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TSC2200EVM | Texas Instruments | TSC2200 Touch Screen Controller Evaluation Module |
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| TSW2200EVM | Texas Instruments | TSW2200EVM: Low Cost Portable Power Supply |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CHERRY SEMICONDUCTOR CORP 11E D 20b?SSb GDGlbS? 4 LINEAR BIPOLAR ARRAY GENESISâ„¢ 2200E, 2200EX SEMI-CUSTOM IC The GENESISâ„¢ 2200E and 2200EX are uncommitted arrays of transistors and resistors fabricated on a single monolithic chip. A unique metal interconnect mask is used to deline the finished custom IC. The 2200EX is an extended performance version that doubles the useful operating current range of the NPN transistors. KJ s:s o :qb â-¡ I È i HS m • TOTAL COMPONENTS: 232 • CHIP SIZE ... | OCR Scan |
1 pages, |
resistor 60k ohm pnp array 2200E 2200EX 2200E abstract |
| Abstract: , H2x tied to H2) 8e 2200e 10e 4e 2e 8e 2200e 10e 4e 2e 8e H1n H2n 2200e 10e 4e 2e 8e 2200e 10e 4e 2e TGn tintHR Line Timing - Low ... | Original |
16 pages, |
single phase vfd circuit diagram ccd Circuit Schematic BFR90 BFR90 amplifier diagram KLI-8811 KLI-8811 abstract |
| Abstract: 30B3 PEAK POSITIVE-PULSE PLATE VOLTAGE (Absolute maximum)d . 2200e max. volts Indicatesa change. ... | OCR Scan |
5 pages, |
6EM5 datasheet abstract |
| Abstract: 220.0E -9 -9 -9 .0E 2.0E 0.0E -9 Ta (D .C eg .) C (F) out Typical Iin vs Ta @Io = 0m A ... | Original |
7 pages, |
SC1460-5 SC1460-5 abstract |
| Abstract: 180.0E -9 220.0E -9 Typical Vo vs. Ta @ Vin = 2.50V Output Voltage ripple 3.5 3.4 3.3 ... | Original |
7 pages, |
diode A5F SC1460-3 SC1460-5 SC1460-3 abstract |
| Abstract: from a 2404/08 to a number of slave Series 2200e or 2400 controllers. If any slave zone departs from ... | Original |
8 pages, |
EN50081-2 pt100 relay PT100 RTD signal conditioning EIA232 DIN43760 current source pt100 rtd PT10 application note pt100 Solid state relay manual standby relay rc 5 remote control PT100 thermocouple eurotherm W26Re datasheet abstract |
| Abstract: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book strain gage technology technical data vishay micro-measurements vse-db0088-0708 Notes: 1.To navigate: a) Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents page to go to the main Table of Contents page. b) Click on the products within the Table of Contents to go directly to the datasheet. c) Use the scroll or page up/page down func ... | Original |
233 pages, |
strain gage amplifier TETRA etch H06A-AC1-125-700 Gore tetra etch schematic diagram induction heater Vishay SR-4 application Note B-129 bathrooms fixtures wall mounted datasheet for awg26 wire wrapping wire kt3 ultra ce ms 6380e ver 1.0 strain gauge amplifier ac ripple neutralizer TN501 datasheet abstract |
| Abstract: Iin (A) 280.0E-6 260.0E-6 240.0E-6 220.0E-6 Vin = 3.5 200.0E-6 Vin = 3 Vin = 2.5 ... | Original |
10 pages, |
SC1464 5E02 3E02 SC1464 abstract |
| Abstract: (Deg. C.) 47.0E-9 56.0E-9 68.0E-9 82.0E-9 180.0E-9 220.0E-9 Cout (F) Typical Vo ... | Original |
6 pages, |
SC1460 SC1460-3 SC1460-3 abstract |
| Abstract: Freescale Semiconductor, Inc. Technical Data DSP56362/D DSP56362/D Rev. 3, 02/2004 Motorola designed the DSP56362 DSP56362 to support digital audio applications requiring digital audio compression and decompression, sound field processing, acoustic equalization, and other digital audio algorithms. The DSP56362 DSP56362 uses the high performance, single-clock-per-cycle DSP56300 DSP56300 core family of programmable CMOS digital signal processors (DSPs) combined with the audio signal processing capability of the Motorola Symp ... | Original |
168 pages, |
AC97 IEC1937 DSP56362 DSP56300 DSP56000 IEC958 DSP56362/D DSP56362/D abstract |
| Abstract: CP312 CP312 PROCESS Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18 MILS Emitter Bonding Pad Area 13.7 x 23.6 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Ti / Ni / Ag 11,300Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 2,200 E PRINCIPAL DEVICE TYPES CZT3120 CZT3120 B BACKSID ... | Original |
2 pages, |
CZT3120 CP312 CP312 abstract |
| Abstract: DESCRIPTION: 5W1 Female Connector - 40Amp Contact .31111,006 -1 .120 0 .4331 .0512 Max. I I L. 1 .496 t 1 a .390 .2200 e Specification! Shell: Steel, Tin Plated Insulaton PBT +30% Fibre-Glass, Black, UL 94V-D Contacts: Brass - Gold Flash â-¡ver Nickel Current Ratings Signal - 5 Amps Current Ratings Power - 40 Amps Contact Resistances 15mDHMS MAX, Insulator Resistances 1000 MDHMS MIN, Voltage: 500V AC for 1 minute Temperature! -50° Cto +100*C .496 i .2363+,008 ~T r THESE DRAWINGS AND SP ... | OCR Scan |
1 pages, |
datasheet abstract |
| Abstract: MP Vishay Thin Film · (Pb) Pb-free · SC70 Available RoHS* · ± 0.05 % MP 3 COMPLIANT · ± 2 ppm TCR · (500ppm70°C 2000 ) · MP 4 Vishay Thin Film MP ±2ppm/°C ±0.05 % 3 4 SC70 25 2 0.1 0.05 3 R1 4 3 R2 R1 R2 MP3 1 2 1 2 MP4 3 4 R1 () R2 () 1K 1K 10K 10K 1K 1K 10K 10K 100 50 k ... | Original |
2 pages, |
MIL-PRF-914 datasheet abstract |
| Abstract: Fast thyristors EUPEC blE D 34032^7 000135^ IflS IUPEC Type Vdrm Vrrm Vdsm = Vdrm Vrsm = VRHM + 100 V V Itrmsm A Itsm 10 ms, tvj max kA /¡2dt 10 ms, tvj max A2s Itavm^c 180 °el sin. A/°C V(TO) t»j = tvjmax V Tt t«i = ^vj max mQ (di/dt)cr DIN I EC 747-6 A/us tq |US (dv/dt)cr DIN IEC 747-6 V/n S Vqt tvj = 25 V Iqt tvj = 25 "C mA RthJC 180 °el sinus °C/W tvj max °c Outline T 691 S 2800 3000 1700 14 980000 1080/54 690/85 1,5 0,5 200 U < 120 N = 1000 M * =1000 2 300 0,0215 120 20 T 698 F 200 4 ... | OCR Scan |
1 pages, |
t930 T1052 EUPEC TT 66 n 12 EUPEC tt 250 N 18 EUPEC TT 106 N 12 datasheet abstract |
| Abstract: Fast thyristors EUPEC blE D â- B^BS1}? DDGIBST IflS «UPEC Type Vdrm Vrrm vdsm = vDRM Vrsm = VRHM + 100 V V Itrmsm A Itsm 10 ms, tvj max kA /¡2dt 10 ms, tvj max A2s Itavm^c 180 °el sin. A/°C V(to) t»j = '»I max V rT t»i = ^vj max mQ (di/dt)cr din i ec 747-6 A/us tq ms (dv/dt)cr din i ec 747-6 V/n s Vgt tvj = 25 °c V Igt tvj = 25 °c mA RthJC 180°el sinus °C/W tvj max °c Outline T 691 S 2800 3000 1700 14 980000 1080/54 690/85 1,5 0,5 200 U < 120 N =1000 M* = 1000 2 300 0,0215 120 20 T 698 F 200 ... | OCR Scan |
1 pages, |
T1052 t930 T1078 T1052 abstract |
| Abstract: 60092MPSERIES 60092MPSERIES.fm Page 6 Sunday, May 6, 2007 11:22 AM MP Vishay Thin Film · (Pb) Pb-free · SC70 Available RoHS* · ± 0.05 % MP 3 COMPLIANT · ± 2 ppm TCR · (500 ppm70 °C 2000 ) · MP 4 Vishay Thin Film MP 2 ppm/°C ± ± 0.05 % 3 4 SC70 25 2 0.1 0.05 3 R1 4 3 R2 R1 R2 MP3 2 1 1 2 MP4 3 4 R1 () R2 () 1K 1K 10K 10K 1 ... | Original |
2 pages, |
H MP 60092MPSERIES 60092MPSERIES abstract |
| Abstract: Green Product S T C 2200 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m ) Max R ugged and reliable. 85 @ V G S = 4.5V 20V 2.3A S OT-323 OT-323 package. 110 @ V G S = 2.5V D S OT-323 OT-323 D G S G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) S ymbol Limi ... | Original |
7 pages, |
ot323 datasheet abstract |
| Abstract: S T C 2200 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 85 @ V G S = 4.5V 20V 2.3A S OT-323 OT-323 package. 110 @ V G S = 2.5V D S OT-323 OT-323 D G S G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Drain- ... | Original |
7 pages, |
datasheet abstract |
| Abstract: AVX Tantalum and Ceramic Chips Capacitors Visit AVX's Website at www.avxcorp.com TAJ Series Standard Case Dimensions - mm (In.) Solid Tantalum W H A Case Chip Capacitors EIA L W1* S +0.2 (0.008) +0.2 (0.008) +0.3 (0.012) Code Code ± -0.1 (0.004) 0.2 (0.008) ± Min. -0.1 (0.004) 0.2 (0.008) -0.2 (0.008) cCapacitance Tolerance: ±10% A 3216 1.6 (0.063) 3.20 (0.126) 1.6 (0.063) 1.2 (0.047) 0.8 (0.031) 1.1 (0.043) cCapacitance Range: 0.1 uF to 330 uF B 3528 2.8 (0.110) 3.50 (0.138) 1. ... | Original |
1 pages, |
taja105k020r 213-1131 datasheet abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| * OPA129 OPA129 OPA129 OPA129 operational amplifier "macromodel" subcircuit * created using Parts release 5.2 on 12/15/94 at 14:58 * REV.A SB * * - * | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR | * | OMISSIONS. BURR-BROWN ASSUMES NO RESPONSIBILITY FOR THE USE OF THIS | * | INFORMATION, AND ALL USE OF SUCH INFORMATION SHALL BE www.datasheetarchive.com/files/sager/features/burr_brn/models/std_mod/opa129.mod |
Sager | 15/12/1994 | 1.88 Kb | MOD | opa129.mod |
| 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6 www.datasheetarchive.com/files/philips/models/bf992_3-v1.html |
Philips | 31/12/2001 | 4.14 Kb | HTML | bf992_3-v1.html |
| 32 31 ZENER RS 10 12 R=100 MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 2E-12 2E-12 2E-12 www.datasheetarchive.com/files/philips/models/bf992_3-v2.html |
Philips | 12/05/2005 | 2.83 Kb | HTML | bf992_3-v2.html |
| 32 31 ZENER RS 10 12 R=100 MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 2E-12 2E-12 2E-12 www.datasheetarchive.com/files/philips/models/bf992_3.html |
Philips | 23/04/2003 | 2.79 Kb | HTML | bf992_3.html |
| ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 R=100 MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 2E-12 2E-12 2E-12 RS=10 .MODEL GATE1 + NMOS www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/philips/bf990a.sbc |
Kaleidoscope | 28/06/1999 | 1 Kb | SBC | bf990a.sbc |
| * OPA129 OPA129 OPA129 OPA129 operational amplifier "macromodel" subcircuit * created using Parts release 5.2 on 12/15/94 at 14:58 * REV.A SB * * - * | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR | * | OMISSIONS. BURR-BROWN ASSUMES NO RESPONSIBILITY FOR THE USE OF THIS | * | INFORMATION, AND ALL USE OF SUCH INFO www.datasheetarchive.com/download/84214222-922593ZC/opa129_pspice_model.zip (OPA129.MOD) |
Texas Instruments | 11/08/2011 | 3.69 Kb | ZIP | opa129_pspice_model.zip |
| MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E www.datasheetarchive.com/files/spicemodels/misc/models/bf990a.prm |
Spice Models | 01/09/2003 | 1.42 Kb | PRM | bf990a.prm |
| Price List "The prices shown in the Intel Price List are in U.S. dollars and should only be referenced in relation to contemplated purchases in the Continental U.S., Alaska, Hawaii, and Canada. Please see your international sales representative for further information". Ready to Buy? Contact one of our Distributors. Operating Group: FA Product Order Code: MF28F010-15 MF28F010-15 MF28F010-15 MF28F010-15 Category Description: 128K X 8 ETOX FLASH MEMO www.datasheetarchive.com/files/intel/design/pricelst/2200e.htm |
Intel | 31/01/1997 | 1.94 Kb | HTM | 2200e.htm |
| .SUBCKT OPA129 OPA129 OPA129 OPA129 1 2 3 4 5 *OPA129 OPA129 OPA129 OPA129 OpAmp, 5 *Node 1,Non-Inverting Input *Node 2,Inverting Input *Node 3,Positive Power Supply *Node 4,Negative Power Supply *Node 5,Output * * * OPA129 OPA129 OPA129 OPA129 operational amplifier "macromodel" subcircuit * created using Parts release 5.2 on 12/15/94 at 14:58 * REV.A SB * * - * | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSU www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/burbrown/opa129.sbc |
Kaleidoscope | 12/11/1997 | 2.07 Kb | SBC | opa129.sbc |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FDPF5N50NZ FDPF5N50NZ FDPF5N50NZ FDPF5N50NZ * 500V N-Channel MOSFET and TO-220F * Model Type: BSIM3V3 *- .SUBCKT FDPF5N50NZ FDPF5N50NZ FDPF5N50NZ FDPF5N50NZ 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 500 Lgate 1 9 1.18e-9 Ldrain 2 5 1.44e-9 Lsource 3 7 9.66e-10 RLgate 1 9 11.8 RLdrain 2 5 14.4 RLsource 3 7 9.66 www.datasheetarchive.com/files/fairchild/simulation-models/fdpf5n50nz.lib |
Fairchild | 22/10/2012 | 2.1 Kb | LIB | fdpf5n50nz.lib |