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25BSR22-B-1-06 Grayhill Inc ENCODER MECH PC 6POS SINGLE visit Digikey Buy
T322B106K010AT KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (dry/solid), 10V, 10% +Tol, 10% -Tol, 10uF, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT visit Digikey Buy
T322B106K006AS KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (dry/solid), 6V, 10% +Tol, 10% -Tol, 10uF, Through Hole Mount, AXIAL LEADED visit Digikey Buy
FN9222B-1-06 Schaffner Mains Power Connector, 1A, 250VAC, Male, Solder Terminal, ROHS COMPLIANTS visit Digikey Buy
T322B106K006AT KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (dry/solid), 6V, 10% +Tol, 10% -Tol, 10uF, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT visit Digikey Buy
T322B106M010AT KEMET Corporation Tantalum Capacitor, Polarized, Tantalum (dry/solid), 10V, 20% +Tol, 20% -Tol, 10uF, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT visit Digikey Buy

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22-B106

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 15TQ045 PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER REVERSE VOLTAGE - 45Volts FORWARD CURRENT - 15.0 Amperes FEATURES R-6 ●Trench MOS Schottky technology .052(1.3) DI .048(1.2) 1.0(25.4) MI ●Low forward voltage drop,low power losses ●High efficiency operation ●High forward surge capability ●Solder dip 275â"ƒ max. 10s,per JESD 22-B106 ●Compliant to RoHS Directive 2002/95/ec and in .360(9.1) .340(8.6) accordance to WEEE 2002/96/EC 210 .360 HY Electronic
Original
Abstract: guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 0.40 Taiwan Semiconductor
Original
HER201 HER207 DO-15 MIL-STD-202 HER201-HER205 HER206-HER207

TSF2060C

Abstract: ITO-220AB Preliminary ITO-220AB TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Features ² ² ² ² ² Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for ITO-220AB package Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC ² Typical Applications ² For use in high frequency
Taiwan Semiconductor
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J-STD-002 22-B102 TSF10100C
Abstract: P2500M 25.0 AMPS. Glass Passivated Rectifier P2500 Features Glass passivated chip junction High current capability, low VF High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Taiwan Semiconductor
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Abstract: 22-B106 Compliant to RoHS Directive 2011/65/EU Halogen free according to JEDEC JS709A standards Vishay Semiconductors
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T5202 T10202C 20202G 20202C 30202C JSTD-020
Abstract: Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 1.2 grams Maximum Ratings and Electrical Taiwan Semiconductor
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UG58G DO-201AD
Abstract: 20TQ045 PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER REVERSE VOLTAGE - 45Volts FORWARD CURRENT - 20.0 Amperes FEATURES R-6 ●Trench MOS Schottky technology .052(1.3) DI .048(1.2) 1.0(25.4) MI ●Low forward voltage drop,low power losses ●High efficiency operation ●High forward surge capability ●Solder dip 275â"ƒ max. 10s,per JESD 22-B106 ●Compliant to RoHS Directive 2002/95/ec and in .360(9.1) .340(8.6) accordance to WEEE 2002/96/EC 210 .360 HY Electronic
Original

GPP100M

Abstract: GPP100MS voltage drop · High forward surge capability · Solder dip 275 °C max. 10 s, per JESD 22-B106 · Material
Vishay Semiconductors
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GPP100MS GPP100M VMN-PT0341-1210 GPP100MS-E3/54 GPP100MS-E3/73
Abstract: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES · Fast switching for high efficiency · Low forward voltage drop · Low leakage current · High forward surge capability · Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) · Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr IR VF TJ max. 1.0 A 400 V to 1000 V 20 A 150 ns, 250 ns, 500 ns 5.0 A 1.3 V Vishay Semiconductors
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AEC-Q101 BA158
Abstract: JESD 22-B106 Weight: 0.34 grams Ordering Information (example) Part No. Package Packing Taiwan Semiconductor
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HER101 HER108 HER101-HER105 HER106-HER108 HER105 HER10
Abstract: denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 0.22 grams Ordering Information Taiwan Semiconductor
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HER101SG HER108SG 101SG 102SG 103SG 104SG
Abstract: denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 0.4 grams Ordering Information Taiwan Semiconductor
Original
HER151G HER158G HER151G-HER155G HER156G-HER158G HER151G-HER154G HER155G
Abstract: New Product VF20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TMBS ® ITO-220AB FEATURES · Trench MOS Schottky technology · Low forward voltage drop, low power losses · High efficiency operation · Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3 · Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC · Halogen-free according to IEC 61249-2-21 definition 1 VF20150S PIN 1 PIN 2 2 Vishay Semiconductors
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Abstract: JESD 22-B106 Weight: 0.34 grams Ordering Information (example) Part No. Package Packing Taiwan Semiconductor
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MUR160A MUR190A MUR16A
Abstract: -202, Method 208 guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Taiwan Semiconductor
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HER151 HER158 HER151-HER155 HER156-HER158 HER151-HER154 HER155
Abstract: guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 1.2 Taiwan Semiconductor
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HER301 HER307 HER301-HER304 HER305 HER306-HER307 HER30
Abstract: "ƒ max.10s per JESD 22-B106 Mounting position: Any Weight: 0.20 grams Ordering Information (example Taiwan Semiconductor
Original
HT11G HT18G HT15G HT16G HT14G
Abstract: denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 0.22 grams Ordering Information Taiwan Semiconductor
Original
105SG 106SG 107SG 108SG HER101SG-HER105SG HER101SG-HER104SG
Abstract: JESD 22-B106 Weight: 0.34 grams Ordering Information (example) Part No. Package Packing Taiwan Semiconductor
Original
Abstract: guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Weight: 0.40 Taiwan Semiconductor
Original
HER201-HER204 HER205 HER20
Abstract: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Rectifier FEATURES · Superectifier application structure for high reliability · Cavity-free glass-passivated junction · Low leakage current · High forward surge capability · Meets environmental standard MIL-S-19500 · Solder dip 275 °C max. 10 s, per JESD 22-B106 · AEC-Q101 qualified DO-204AL (DO-41) · Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in Vishay Semiconductors
Original
Abstract: New Product FGP20B thru FGP20D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES · Superectifier structure for high reliability condition · Cavity-free glass-passivated junction · Ultrafast reverse recovery time · Low forward voltage drop · Low leakage current · Low switching losses, high efficiency · High forward surge capability · Meets environmental standard MIL-S-19500 · Solder dip 275 °C max. 10 s, per JESD 22-B106 · AEC-Q101 qualified · Compliant to RoHS Directive 2002/95 Vishay Semiconductors
Original
DO-204AC

DO-204AC

Abstract: FGP20B , per JESD 22-B106 DO-204AC (DO-15) · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC
Vishay Semiconductors
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J-STD-002

Abstract: SB5H100 SB5H90, SB5H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES · Guardring for overvoltage protection · Low power losses and high efficiency · Low forward voltage drop · Low leakage current · High forward surge capability · High frequency operation · Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Vishay Semiconductors
Original

FGP10B

Abstract: DO-204AL New Product FGP10B thru FGP10D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES · Cavity-free glass-passivated junction · Ideal for automated placement · Ultrafast reverse recovery time · Low switching losses, high efficiency · High forward surge capability · Meets environmental standard MIL-S-19500 · Solder dip 275 °C max. 10 s, per JESD 22-B106 * Glass encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 · AEC-Q101
Vishay Semiconductors
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20E-3

Abstract: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES · Superectifier application structure for high reliability · Cavity-free glass-passivated junction · Low leakage current · High forward surge capability · Meets environmental standard MIL-S-19500 · Solder dip 275 °C max. 10 s, per JESD 22-B106 · AEC-Q101 qualified DO-204AL (DO-41) · Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL
Vishay Semiconductors
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20E-3

rgp10g

Abstract: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES · Superectifier structure for high reliability condition · Cavity-free glass-passivated junction · Fast switching for high efficiency · Low leakage current · High forward surge capability · Meets environmental standard MIL-S-19500 · Solder dip 275 °C max. 10 s, per JESD 22-B106 · AEC-Q101 qualified · Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC · Halogen-free according to IEC
Vishay Semiconductors
Original
rgp10g
Abstract: -202, Method 208 guaranteed Polarity: Color band denotes cathode Solder dip 260â"ƒ max.10s per JESD 22-B106 Taiwan Semiconductor
Original
HER15
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