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217A

Catalog Datasheet MFG & Type PDF Document Tags

217A OPTOCOUPLER

Abstract: 217A /216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN , high degree of electri cal isolation between input and output. The IL215A//216A/217A comes in a , /216A/217A Phototransistor Small Outline Surface Mount Optocoupler Dimensions in inches (mm) H fl H R , IF - LED Current - mA 100 5-87 1 10 100 IF - LED Current - mA IL215A/216A/217A , 216A/217A 5-68
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OCR Scan
217A OPTOCOUPLER IL215A--20 IU16A-- IL217A-- 2500VAC RS481A E52744
Abstract: % Melting Temperature: +217°C to +227°C Useful appliance with adjustable inclination, that fully , : Sn95,Ag4Cu1 Flux Content: 2% Melting Temperature: +217°C Part No. Ord.No. 54322 0,5mm , % Melting Temperature: +217°C Description S LDF 1 Filter to LDA 4 LDS1 Ord.No. Description , ,7 Flux Content: 3,3% Melting Temperature: +217°C to +228°C LDA 1 Part No. Ord.No , Temperature: +217°C to +219°C ZD-153 S ZD-153 Pb free Part No. Ord.No. Description S SOS Electronic
Original
F-SW26 220/240V/18W 230VAC/50H SAC305
Abstract: inputs, and Rev: 2.17a 9/2002 Specifications cited are subject to change without notice. For latest , 22 mm2 Body-1 mm Bump Pitch Rev: 2.17a 9/2002 2/39 © 1999, Giga Semiconductor, Inc , Core power supply I/O and Core Ground Output driver power supply Rev: 2.17a 9/2002 3/39 © 1999 , L M N P R 11 x 15 Bump BGA-13 mm x 15 mm Body-1.0 mm Bump Pitch Rev: 2.17a 9/2002 4/39 , C D E F G H J K L M N P R 11 x 15 Bump BGA-13 mm x 15 mm Body-1.0 mm Bump Pitch Rev: 2.17a 9 GSI Technology
Original
GS8162Z18 209-B 8162Z18
Abstract: conditions conditions average ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak , . 260°C 217°C max. 300 s 10 . 30 s Time / s 30 . 150 s Vectron International
Original
Abstract: temperature conditions conditions average ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C , / °C max. 260°C 217°C max. 300 s 10 . 30 s Time / s 30 . 150 s Vectron International
Original
Abstract: conditions average ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time , °C 217°C max. 300 s 10 . 30 s 30 . 150 s Time / s 7. Taping: Marking Marking Vectron International
Original
CF001

217A

Abstract: 216A IL215A/216A/217A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER · FEATURES · High , Coplanarity ±.0015 (.04) max. Characteristics (TA=25°C) The IL215A/216A/217A are optically coupled , isolation between input and output. The IL215A//216A/217A comes in a standard SOIC-8 small outline package , IL215A/216A/217A 5­2 Figure 9. Normalized non-saturated and saturated collector-emitter current , FF TO 0.1 0.5 1 5 10 50 100 Load resistance RL (K) IL215A/216A/217A 5­3
Siemens
Original
216A IL215A IL216A IL217A ir led 55c US2050 IL215A/216A/217A IL216A--50 IL217A--100 IL215A//216A/217A
Abstract: ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time within 5°C of peak , Chip-mount air reflow profile Temperature / °C max. 260°C 217°C max. 300 s 10 . 30 s 30 Vectron International
Original
Abstract: ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time within 5°C of peak , Chip-mount air reflow profile Temperature / °C max. 260°C 217°C max. 300 s 10 . 30 s 30 Vectron International
Original

217A

Abstract: 217A OPTOCOUPLER The IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon , maintaining a high degree of electrical isolation between input and output. The IL215A//216A/217A comes in a , IL215A/216A/217A Figure 9. Normalized non-saturated and saturated collector-em itter current versus , resistance R|_ (KQ) IL215A/216A/217A
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OCR Scan
IL215A-- IL216A-- RS481
Abstract: conditions average ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time , °C 217°C max. 300 s 10 . 30 s 30 . 150 s Time / s 7. Taping: Marking Marking Vectron International
Original
Abstract: ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time within 5°C of peak , Chip-mount air reflow profile Temperature / °C max. 260°C 217°C max. 300 s 10 . 30 s 30 Vectron International
Original
Abstract: SG117 / 217 / 317 / 117A / 217A / 317A ® TM Additionally, the SG117A reference voltage is , / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator Note: Exceeding , SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator Input , SG117A / SG217A Min Typ Max 1.238 1.250 1.262 Page 3 SG117 / 217 / 317 / 117A / 217A / 317A  , Page 4 SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Microsemi
Original
FEATURESSG117A/SG117 MIL-STD-883 MIL-M38510/11704BYA JAN117K MIL-M38510/11703BXA JAN117T
Abstract: ramp-up rate ( 30°C to 217°C ) > 100°C > 150°C > 217°C peak temperature time within 5°C of peak , Chip-mount air reflow profile Temperature / °C max. 260°C 217°C max. 300 s 10 . 30 s 30 Vectron International
Original

SG117

Abstract: M38510/11703BXA SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator , : 714-893-2570 Page 1 SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage , SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator , Microsemi .C OM Parameter Page 3 SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three , / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator CHARACTERISTIC CURVERS
Microsemi
Original
M38510/11703BXA 2816 eeprom SG317A SG317 SG317R SG217 SG117F/883B SG117AG/883B SG117AG/DESC SG117AG SG117G/883B SG117G
Abstract: 1.Highest temperature: 250±5â"ƒ 2.Timeï¼temp.≧ 217â"ƒï¼‰ï¼š60~150 Second. 3.IR reflow timesï , Temp - 5â"ƒï¼š30sec max. Max time above 217â"ƒ :60sec~150sec max. fï¹'Products comply with RoHS , 217â"ƒ Temperature ( â"ƒ ) bï¹'Operating temp.:-40â"ƒ-+125â"ƒ Reflow Area +3.0â"ƒ , .Peak temperature:240±5â"ƒ 3.Timeï¼temp.≧217â"ƒï¼‰ï¼š60~150 second. 4.IR reflow times:1 times. The ABC Electronics
Original
SS0804 AR-001C MIL-STD-202 JESD22-B111 JIS-C-6429 J-STD-002
Abstract: 1.Highest temperature: 245±5â"ƒ 2.Timeï¼temp.≧ 217â"ƒï¼‰ï¼š60~150 Second. 3.IR reflow timesï , time above 217â"ƒ :60sec~150sec max. eï¹'Moisture sensitivity Level 1 Temperature Rising Area , ¼š-40â"ƒ -+125â"ƒ bï¹'Operating temp.:-40â"ƒ-+125â"ƒ Temperature ( â"ƒ ) 217â"ƒ 60sec~150sec 200 , .Peak temperature:240±5â"ƒ 3.Timeï¼temp.≧217â"ƒï¼‰ï¼š60~150 second. 4.IR reflow times:1 times. The ABC Electronics
Original
SS1806
Abstract: 1.Highest temperature: 245±5â"ƒ 2.Timeï¼temp.≧ 217â"ƒï¼‰ï¼š60~150 Second. 3.IR reflow timesï , - 5â"ƒï¼š30sec max. Max time above 217â"ƒ :60sec~150sec max. Temperature Rising Area , . Peak Temperature: 245â"ƒ 217â"ƒ Temperature ( â"ƒ ) â£ï¹'General specification: 150 , .Peak temperature:240±5â"ƒ 3.Timeï¼temp.≧217â"ƒï¼‰ï¼š60~150 second. 4.IR reflow times:1 times. The ABC Electronics
Original
ST2412 20130520-B AR-0001C

20121203-B

Abstract: MIL-STD-202 Method 210 1.Highest temperature: 260±5â"ƒ 2.Timeï¼temp.≧ 217â"ƒï¼‰ï¼š60~150 Second , ¼š260â"ƒ max. Max. Peak Temp - 5â"ƒï¼š30sec max. Max time above 217â"ƒ :60sec~150sec max. Temperature , ¼š-40â"ƒ-+125â"ƒ ( Temp. rise included. ) cï¹'Resistance to solder heat:260â"ƒ.10 secs. Temperature ( â"ƒ ) 217â"ƒ , "ƒ / 16Hours±30 min. 2.Peak temperature:240±5â"ƒ 3.Timeï¼temp.≧217â"ƒï¼‰ï¼š60~150 second. 4.IR reflow
ABC Electronics
Original
20121203-B SU4018
Abstract: "ƒ 2.Timeï¼temp.≧ 217â"ƒï¼‰ï¼š60~150 Second. 3.IR reflow times:3 times. 10.Rated current , ¼š250â"ƒ max. Max. Peak Temp - 5â"ƒï¼š30sec max. Max time above 217â"ƒ :60sec~150sec max. dï¹'Moisture , "ƒ ) 217â"ƒ 60sec~150sec 200 60sec max. 150 60sec~120sec 100 50 0 50 100 150 , pre-testing: 155±5â"ƒ / 16Hours±30 min. 2.Peak temperature:240±5â"ƒ 3.Timeï¼temp.≧217â ABC Electronics
Original
SB1608

stc 1740

Abstract: 5962-9319301HXA subgroups Device type Limits Unit Min Max Input ripple current 'rip Iout = ±2-17A, BW =10 kHz to 10
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OCR Scan
FORM2233 QML-38534 5962-9319301HXA stc 1740 MFL2815D 5962-R252-94 5962-E186-98 5962-9319301HTC L2815

9N90

Abstract: w 9n90 mJ 20 I D=21.7A, V DS=480V, T j=125° C A 80 V/ns 40 V/ns di /dt I S=21.7A , , V GS=10 V, I D= 21.7A, R G=6.8 #22; ns Gate Charge Characteristics V DD=480 V, I D=21.7 A
Unisonic Technologies
Original
9N90-T3P-T 9N90L-T3P-T 9N90 w 9n90 9N90L QW-R502-217
Abstract: D=21.7A, V DS=480V, T j=125°C A 80 V/ns 40 V/ns di /dt I S=21.7A, V DS=480 V , =25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 â Infineon Technologies
Original
SPP24N60CFD PG-TO220 24N60CFD

24N60CFD

Abstract: dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 I D=21.7A, V DS=480V, T j=125°C A 80 V/ns 40 V/ns di /dt I S=21.7A, V DS=480 V, T j=125°C 600 , , V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 ns Gate Charge
Infineon Technologies
Original

24N60CFD

Abstract: D217 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. RON = f(T j); ID=2.17A , ); ID= 2.17A; VIN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 2.0 max. m V 1.6
Infineon Technologies
Original
D217 diode d217 PG-TO-220-3-1 JESD22

Q67060-S7202-A2

Abstract: GPS05560 diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=21.7A, V DS=480V, T j=125°C I S=21.7A, V DS=480 V, T j=125°C static AC (f >1 Hz) Power dissipation , GS=10 V, I D= 21.7A, R G=6.8 " 188 50 24 100 9 ns V GS=0 V, V DS=25 V, f =1 MHz 3160 900 34 103 pF
Infineon Technologies
Original
VPS05163 Q67060-S7202-A2 GPS05560 STANDARD DIN 6784

24N60CFD

Abstract: D217 dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 I D=21.7A, V DS=480V, T j=125°C A 80 V/ns 40 V/ns di /dt I S=21.7A, V DS=480 V, T j=125°C 600 , , V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 ns Gate Charge
Infineon Technologies
Original

24n60cfd

Abstract: d217 diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 I D=21.7A, V DS=480V, T j=125°C A 80 V/ns 40 V/ns di /dt I S=21.7A, V DS=480 V, T j , , V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R
Infineon Technologies
Original
217a marking

24N60CFD

Abstract: SPW24N60CFD diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 I D=21.7A, V DS=480V, T j=125°C A 80 V/ns 40 V/ns di /dt I S=21.7A, V DS=480 V, T j , , V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 ns Gate Charge
Infineon Technologies
Original
SPW24N60CFD PG-TO247 PG-TO247-3

24N60CFD

Abstract: diode d217 =72 K/W R ON = f(T j); ID=2.17A; V IN=10V 10 225 m 8 max. 175 RDS(on) max. 7 , ); ID= 2.17A; V IN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 2 max. m V
Infineon Technologies
Original
d217a

GPS05560

Abstract: VPS05163 f(TS) resp. R ON = f(Tj ); ID=2.17A; VIN =10V Ptot = f(TA) @ R thJA=72 K/W 10 225 W , . input threshold voltage R ON = f(T j); ID= 2.17A; V IN=5V VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V
Infineon Technologies
Original
3118N

sot223-4

Abstract: GPS05560 SG117 / 217 / 317 / 117A / 217A / 317A ® TM Additionally, the SG117A reference voltage is , / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator Note: Exceeding , SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage Regulator Input , SG117A / SG217A Min Typ Max 1.238 1.250 1.262 Page 3 SG117 / 217 / 317 / 117A / 217A / 317A  , Page 4 SG117 / 217 / 317 / 117A / 217A / 317A ® TM 1.5A Three Terminal Adj. Voltage
Infineon Technologies
Original
sot223-4 HITFET

24N60CFD

Abstract: D217 voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=21.7A, V DS=480V, T j=125°C I S=21.7A, V DS , , V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 188 50
Infineon Technologies
Original

24N60CFD

Abstract: . RON = f(T j); ID=2.17A; V IN=10V Ptot = f(TA) @ R thJA=72 K/W 10 225 m 8 max. 175 , voltage RON = f(Tj ); ID= 2.17A; V IN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 m
Infineon Technologies
Original

STANDARD DIN 6784

Abstract: Q67060-S7202 ) resp. RON = f(T j); ID=2.17A; V IN=10V Ptot = f(TA) @ R thJA=72 K/W 10 225 m 8 max , threshold voltage RON = f(Tj ); ID= 2.17A; V IN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250
Infineon Technologies
Original
Q67060-S7202

GPS05560

Abstract: VPS05163 . RON = f(Tj ); ID=2.17A; VIN =10V Ptot = f(TA) @ R thJA=72 K/W 10 225 W mW 8 175 , voltage RON = f(T j); ID= 2.17A; V IN=5V VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V 250 2 max
Infineon Technologies
Original
BTS 3118 D

VPS05163

Abstract: GPS05560 . RON = f(Tj ); ID=2.17A; VIN =10V Ptot = f(TA) @ R thJA=72 K/W 10 225 W mW 8 175 , voltage RON = f(T j); ID= 2.17A; V IN=5V VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V 250 2 max
Infineon Technologies
Original
Q67060-S7202-A3
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