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1 - 50 of about 10000+ for 2122 |
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First line: Abstract: .. /766221288&2126&2122. ,%% + ,%$ !"#$%!&’% #% "% !* +,-.!!"!-% ##,*!!!*"% - .. datasheet abstract.. |
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First line: Abstract: .. /766221288&2126&2122 .. datasheet abstract.. |
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First line: Abstract: .. /766221288&2126&2122. ,%% + ,%$ !"#$%!&’% #% "% !* +,-.!!"!-% ##,*!!!*"% - .. datasheet abstract.. |
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First line: Abstract: .. /7662&&&212&88%&&2126%&&2122 ,$$ +,$# !"#$%!&’% #% % !*" +,-.!!"!- .. datasheet abstract.. |
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First line: Golledge Electronics TA19 2122.50MHz Filter Abstract: .. 2122.50MHz SAW Filter Model: TA0228A. Part No: MA05751 REV NO.: 1a. TA0228A v1a 1. A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC voltage: 0 V. 3. Operating Temperature: -20°C to +75°C 4. Storage .. datasheet abstract.. |
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First line: SPICE PARAMETER SP8K2 ROHM Div. SP8K2 NMOSFET model Date This model includes Abstract: .. MODEL DREV D + IS=118.51E-12 + N=1.2122 + RS=9.7037E-3 + IKF=24.553 .ENDS SP8K2 .. datasheet abstract.. |
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First line: FEATURES BENEFITS RoHS compliant Series Panel Mount Indicators Mounting Hole Long Life Abstract: .. 609-2122-120F Red 6 15 60 Recessed 2 B. 609-2212-120F Green 6 15 110 Recessed 2 C. 609-2222-120F Green 6 15 110 Recessed 2 B. 609-2312-120F Yellow 6 15 90 Recessed 2 C. 609-2322-120F Yellow 6 15 90 Recessed .. datasheet abstract.. |
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First line: Weico Wire Cable Tubing Braid Tinned Copper Braid Tinned Copper Coaxial Coaxial Abstract: .. 2122 M16878/4BFB-X 22 7/30 .010 .050. 2122/19 M16878/4BFE-X 22 19/34 .010 .051. 2120 M16878/4BGB-X 20 7/28 .010 .058. 2120/19 M16878/4BGE-X 20 19/32 .010 .059. 2118† M16878/4BHB-X 18 7/26 .010 .068 .. datasheet abstract.. |
57.88 Kb |
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First line: SSM-2120 / SSM-2122 Precision Monolithics Inc. DYNAMIC RANGE PROCESSOR / DUAL FEATURES GENERAL DESCRIPTION SSM-2120 monolithic Abstract: .. This “dynamic range processor” consists of two VCAs and two level detectors the SSM-2122 consists of two VCAs only . These circuit blocks allow the user to logarith-mically control the gain .. datasheet abstract.. |
154.6 Kb |
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First line: SSM-2120 / SSM-2122 Precision Monolithics Inc. DYNAMIC RANGE PROCESSOR / DUAL FEATURES GENERAL DESCRIPTION SSM-2120 monolithic Abstract: .. This “dynamic range processor” consists of two VCAs and two level detectors the SSM-2122 consists of two VCAs only . These circuit blocks allow the user to logarith-mically control the gain .. datasheet abstract.. |
114.86 Kb |
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First line: Specification Sheet SM2122-52LD SSPA This affordable high quality LDMOS amplifier designed Universal Abstract: .. http://www.ssbtech.com/specs/2122-52ld/2122_52ld.htm [2/12/2002 1:05:15 PM] .. datasheet abstract.. |
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First line: Specification Sheet SM2122-51LD SSPA This affordable high quality LDMOS amplifier designed Universal Abstract: .. http://www.ssbtech.com/specs/2122-51ld/2122_51ld.htm [2/12/2002 1:04:13 PM] .. datasheet abstract.. |
37 Kb |
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First line: V802ME06 VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE FEATURES Abstract: .. 2122 2141 2158 2176 2195 2217 2242 2266 2290 2313 2336 2357 2377 2397 2415 2433 2448. LOW COST - HIGH PERFORMANCE. VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A. .. datasheet abstract.. |
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First line: SMV2020L-LF VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE FEATURES Abstract: .. 1681 1760 1832 1904 1975 2049 2122 2188 2242 2286. LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. SMV2020L-LF. TUNING CURVE, typ .. datasheet abstract.. |
39.57 Kb |
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First line: FUNCTIONAL TABLE Bipolar NJMXXXX Dual Supply Type Single Circuit General Precision OP-07 Abstract: .. Low Noise 2041, 2043, 2068, 2122, 4560, 4562, 4565, 5532 High Performance 4580, 2114 Low Saturation Output Voltage 2100, 2115, 2140 High Output Current 4556A Transconductance 13600 .. datasheet abstract.. |
9.65 Kb |
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First line: SPICE PARAMETER SP8M8 ROHM Div. SP8M8N NMOSFET model Date .SUBCKT SP8M8N Abstract: .. MODEL DREV D + IS=118.51E-12 + N=1.2122 + RS=9.7037E-3 + IKF=24.553 .ENDS SP8M8_N. by ROHM TR Div. * SP8M8_P PMOSFET model * Date: 2006/10/11 *D G S .SUBCKT SP8M8_P 1 2 3 M1 1 2 3 3 MOS_P .. datasheet abstract.. |
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First line: SPICE PARAMETER SP8M5 ROHM Div. SP8M5N NMOSFET model Date .SUBCKT SP8M5N Abstract: .. MODEL DREV D + IS=118.51E-12 + N=1.2122 + RS=9.7037E-3 + IKF=24.553 .ENDS SP8M5_N. by ROHM TR Div. * SP8M5_P PMOSFET model * Date: 2006/10/04 *D G S .SUBCKT SP8M5_P 1 2 3 M1 1 2 3 3 MOS_P .. datasheet abstract.. |
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First line: PB16S MOUNTING BOARD Screw terminal barrier block logic connections Screw terminal barrier Abstract: .. 1 2 3 4 5 6 7 9 8 10 1112 1314 1516 1718 19 20 2122 23242526 2728 2930 3132. 32 31 30 29 28 27 26 25 24 23 12 11 10 8 97 6 5 4 3 2 1 1314 1516 1718 1920 2122. SIGNAL INPUT/OUTPUT BARRIER STRIP. LED STATUS INDICATOR 16 .. datasheet abstract.. |
335.41 Kb |
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First line: FEATURES SPECIFICATIONS Features Benefits circuits Pre-loaded spring clamp design assures proper termination Abstract: .. 39980-2122 983922 39981-2122 983922-G30 22 4.20 106.68 4.418 112.22. 39980-2123 983923 39981-2123 983923-G30 23 4.40 111.76 4.618 117.30. 39980-2124 983924 39981-2124 983924-G30 24 4.60 116 .. datasheet abstract.. |
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First line: V613ME25-LF VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE dBc / Hz Abstract: .. 2068 2086 2104 2122 2142 2163 2186 2209 2232 2253. VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. V613ME25-LF. TUNING CURVE, typ. POWER CURVE, typ. PAGE 2. PHYSICAL .. datasheet abstract.. |
68.61 Kb |
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First line: Molex Welcome Connectors Interconnects electricalelectronic fiber optic..IA Cable SIMM DIMM PLCC Input / output Abstract: .. 90119-2122 C-Grid IIITM Crimp Terminal, 26-28 AWG, Bag, 0.76μm 30μ" Selective Gold Au For all product dimensions, please refer to Drawing PDF . http://www.molex.com/cgi-bin/bv/molex .. datasheet abstract.. |
119.56 Kb |
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First line: SMV2165L VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE FEATURES Abstract: .. 1904 1952 1992 2027 2060 2093 2122 2152 2183 2211 2241 2270 2298. LOW COST - HIGH PERFORMANCE. VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. SMV2165L. TUNING .. datasheet abstract.. |
138.8 Kb |
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First line: FEATURES SPECIFICATIONS Features Benefits Fully enclosed contact Contact plating orientation according North / south Abstract: .. 030/.048 1.37 .054 1.37 .054 2.00 .079 1.70 .067 90119-2121 E 90119-2122 F. .. datasheet abstract.. |
42.74 Kb |
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First line: V610ME10-LF PHASE NOISE Abstract: .. 1915 1971 2016 2055 2090 2122 2153 2182 2209 2236. FREQUENCY MHz Physical Dimensions. Z-COMM. XXXXXXXX-LF W/O# D/C PACKAGE H. MINI-14S 0.220. 0.160 MINI-14S-LOW. 0.130 MINI-14S-L. NOTE: ALL DIMENSIONS .. datasheet abstract.. |
78.86 Kb |
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First line: CAT5261 Dual Digitally Programmable Potentiometer DPPTM with Taps Interface FEATURES linear-taper digitally Abstract: .. Document No. 2122, Rev. C. registers is via a SPI serial bus. On power-up, the contents of the first data register DR0 for each of the potentiometers is automatically loaded into its respective .. datasheet abstract.. |
93.1 Kb |
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First line: CAT5261 Dual Digitally Programmable Potentiometer DPPTM with Taps Interface FEATURES linear-taper digitally Abstract: .. Document No. 2122, Rev. B. registers is via a SPI serial bus. On power-up, the contents of the first data register DR0 for each of the potentiometers is automatically loaded into its respective .. datasheet abstract.. |
93.05 Kb |
15 Pages
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First line: Electropneumatic Timing Relays Series Miniature DESIGN FEATURES High Repeat Accuracy over voltage Abstract: .. Series 2122 Off-Delay - Applying a rated voltage to the coil for at least 75 msec. for accurate timing will instantaneously transfer the switch, breaking the NC contacts and mak-ing the NO .. datasheet abstract.. |
172.72 Kb |
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First line: Transistors with built-in Resistor UN2121 / 2122 / 2123 / 2124 / 212X / 212Y Silicon epitaxial planer transistor digital circuits Features Abstract: .. 1. Transistors with built-in Resistor. UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor. For digital circuits. ■ Features ● Costs can be reduced through downsizing of .. datasheet abstract.. |
82.89 Kb |
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First line: V626ME16-LF PHASE NOISE Abstract: .. 1917 1946 1983 2023 2067 2096 2112 2122 2128 2133 2137 2140. FREQUENCY MHz Physical Dimensions. Z-COMM. XXXXXXXX-LF W/O# D/C. 0.100 MINI-16-UL. 0.085 MINI-16-EL. PACKAGE H. MINI-16 0.220. 0.160 MINI .. datasheet abstract.. |
81.81 Kb |
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First line: CLV2300A-LF PHASE NOISE Abstract: .. 2122 2160 2196 2235 2280 2328 2384 2438 2485 2516. FREQUENCY MHz Physical Dimensions. Z-COMM. XXXXXXXX-LF W/O# D/C. 0.100 MINI-16-UL. 0.085 MINI-16-EL. PACKAGE H. MINI-16 0.220. 0.160 MINI-16-LOW .. datasheet abstract.. |
81.05 Kb |
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First line: Si3433BDVRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. CT1 1.2122 m N/A 5.6371 m. CT2 113.7516 m N/A 1.3087 m. CT3 6.9378 m N/A 18.4074 m. CT4 2.5174 N/A 6.3824 m. www.vishay.com 2. Document Number: 74804 Revision: 19-Jul-07. Vishay Siliconix Si3433BDV_RC .. datasheet abstract.. |
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First line: Si9407AEYRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. CF3 91.2122 m N/A 39.6644 m. CF4 1.4926 N/A 733.7564 m. Document Number: 73749 Revision 17-Jan-06. www.vishay.com 3. Vishay Siliconix Si9407AEY_RC. .. datasheet abstract.. |
194.3 Kb |
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First line: REVISIONS DATE A.CH DESCRIPTION RELEASE PINS ASSIGNMENT SYSBOL DESCRIPTION WWW.NELYTECH.COM 11--18 / RST Abstract: .. 2122. PITCH2.54X10. LED K. 128X128 DOTS .. datasheet abstract.. |
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First line: Freescale Semiconductor Technical Data Document Number MRF21125 Rev. Power Field Effect Transistors Abstract: .. Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 .. datasheet abstract.. |
421.08 Kb |
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First line: Bussmann In-Line Fuseholder Type Various Length Fuses Series Dimensional Data dimensions 55.6mm Abstract: .. Form No. HR and HM Series Page 1 of 1 BIF Doc #2122. Bussmann®. 12-21-98 SB98107 Rev. A. 0.75" 19.1mm 2.19" 2.19" 55.6mm 1.56" 39.7mm 0.69" 17.5mm 0.38" 9.5mm The only controlled copy of this .. datasheet abstract.. |
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First line: FEATURES SPECIFICATIONS Features Benefits Sizes circuits Contact plating orientation according North / south contact Abstract: .. 18 90130-2122 90130-2222 90130-2322 30.66 1.207 20.32 .800 28.24 1.112 20 90130-2124 90130-2224 90130-2324 33.20 1.307 22.86 .900 30.78 1.212 26 90130-2130 90130-2230 90130 .. datasheet abstract.. |
43.43 Kb |
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First line: CAT5261 Dual Digitally Programmable Potentiometers DPPTM with Taps Interface FEATURES linear-taper digitally Abstract: .. 1 Doc. No. MD-2122 Rev. F. Characteristics subject to change without notice. Dual Digitally Programmable Potentiometers DPPTM with 256 Taps and SPI Interface. FEATURES. Ñ Two linear-taper digitally .. datasheet abstract.. |
220.98 Kb |
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First line: CAT5261 Dual Digitally Programmable Potentiometers DPPTM with Taps Interface FEATURES linear-taper digitally Abstract: .. CAT5261. © Catalyst Semiconductor, Inc. 1 Doc. No. MD-2122 Rev. D. Characteristics subject to change without notice. Dual Digitally Programmable Potentiometers DPPTM with 256 Taps and SPI Interface .. datasheet abstract.. |
235.82 Kb |
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First line: CAT5261 Dual Digitally Programmable Potentiometers DPPTM with Taps Interface FEATURES linear-taper digitally Abstract: .. CAT5261. © Catalyst Semiconductor, Inc. 1 Doc. No. MD-2122 Rev. E. Characteristics subject to change without notice. Dual Digitally Programmable Potentiometers DPPTM with 256 Taps and SPI Interface .. datasheet abstract.. |
234.6 Kb |
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First line: FPP-01 BLOCK FILTERS Actual information about approvals found Standard- Medical-Filter Description Abstract: .. 6 A 5500.2120 0.7 A 5500.2121 1 A 5500.2122 2 A 5500.2123 3 A 5500.2124 1 A 5500.2125 3 A 5500.2126 V Va arriia an ntts s. O Or rd de er r N Nu um mb be er r R Ra atte ed d c cu ur rr re en ntt [[A A]] F .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MRF21180 / D SubMicron MOSFET Line Power Abstract: .. , IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz Gps 11 12.1 — dB. Drain Efficiency VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 .. datasheet abstract.. |
164.28 Kb |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MRF21125 / D SubMicron MOSFET Line Power Abstract: .. VDD = 28 Vdc, Pout = 20 W Avg, 2‐carrier W‐CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz Gps 12 13 — dB. Drain Efficiency VDD = 28 Vdc, Pout = 20 W Avg, 2‐carrier .. datasheet abstract.. |
156.02 Kb |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MRF21085 / D MOSFET Line Power Field Abstract: .. , IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz Gps 12 13.6 — dB. Drain Efficiency VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157 .. datasheet abstract.. |
172.83 Kb |
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First line: Transistors with built-in Resistor UNR2121 / 2122 / 2123 / 2124 / 212X / 212Y UN2121 / 2122 / 2123 / 2124 / 212X / 212Y Silicon epitaxial planer transistor Unit digital Abstract: .. UNR2121/2122/2123/2124/212X/212Y UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor. For digital circuits. Features • Costs can be reduced through downsizing .. datasheet abstract.. |
115.43 Kb |
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First line: SPICE MODELS Mitel Semiconductor been using several years SPICE parameters internal Design. Abstract: .. World Headquarters - Canada Tel: +1 613 592 2122 Fax: +1 613 592 6909. North America Asia/Pacific Europe, Middle East, Tel: +1 770 486 0194 Tel: +65 333 6193 and Africa EMEA Fax: +1 770 631 .. datasheet abstract.. |
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First line: SINCE Part Digit Size Common Anode BT-A401ND BT-A405ND BT-A405NE BT-A402ND BT-A403ND BT-A404ND Abstract: .. 20 19 3 2 1 2122 17 16 6 5 4 187 13 12 10 9 8 14 15. 6.0 .236 PIN 1. D.1 D.2 D.3. 15.8 .622 0.51 .020 BT-A40xND. 8. 11 2 1 16 6. 5. 4 7 13 12 10 9 8. 20.10 .791 5.20 .205 7.0 .276 2.54x7=17.78. .100x7=.700 0.51 .. datasheet abstract.. |
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First line: V613ME05-LF VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE dBc / Hz Abstract: .. 2068 2086 2104 2122 2142 2163 2186 2209 2232 2253. LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. V613ME05-LF. TUNING CURVE, typ .. datasheet abstract.. |
93.42 Kb |
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First line: FC22 TR NPN Epitaxial Planar Silicon Transistor FET N-Channel Junction Silicon High-Frequency Applications TENTATIVE Abstract: .. Package Dimensions 2122. Specifications and information herein are subject to change without notice. VDSX VGDS IG ID PD. 15. -- 15 10 50 200. V V. mA mA mW. High-Frequency Amp, AM Applications. [FET] Drain .. datasheet abstract.. |
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First line: FC21 TR NPN Epitaxial Planar Silicon Transistor FET N-Channel Junction Silicon High-Frequency Amp. tuner Abstract: .. Package Dimensions 2122. Specifications and information herein are subject to change without notice. VDSX VGDS IG ID PD. 40. -- 40 10 75 400. V V. mA mA mW. High-Frequency Amp. AM tuner RF Amp. Applications .. datasheet abstract.. |
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First line: Part Digit Size Common Anode BT-A401ND BT-A405ND BT-A405NE BT-A402ND BT-A403ND BT-A404ND Three-Digit Abstract: .. 20 19 3 2 1 2122 17 16 6 5 4 18 7 13 12 10 9 8 14 15. 6.0 .236 PIN 1. D.1 D.2 D.3. 15.8 .622 0.51 .020 BT-A40xND. 8. 11 2 1 16 6. 5. 4 7 13 12 10 9 8. 20.10 .791 5.20 .205 7.0 .276 2.54x7=17.78. .100x7=.700 0.51 .. datasheet abstract.. |
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