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SN74ABT620NSRG4 Texas Instruments ABT SERIES, 8-BIT TRANSCEIVER, INVERTED OUTPUT, PDSO20, GREEN, PLASTIC, SOP-20 visit Texas Instruments
SN74ALS520NSR Texas Instruments 8-Bit Identity Comparators (P=Q) with Enable and 20K Ohm Q-Input Pullup Resistors 20-SO 0 to 70 visit Texas Instruments
SN74AS20NSR Texas Instruments Dual 4-Input Positive-NAND Gates 14-SO 0 to 70 visit Texas Instruments
SN74HC20NSR Texas Instruments Dual 4-Input Positive-NAND Gates 14-SO -40 to 85 visit Texas Instruments
SN74LS20NSRG4 Texas Instruments LS SERIES, DUAL 4-INPUT NAND GATE, PDSO14, GREEN, PLASTIC, SOP-14 visit Texas Instruments
SN74ABT620NSRE4 Texas Instruments ABT SERIES, 8-BIT TRANSCEIVER, INVERTED OUTPUT, PDSO20, GREEN, PLASTIC, SOP-20 visit Texas Instruments

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20ns Datasheet

Part Manufacturer Description PDF Type
20NSGG Altech Fuse 20A 415V BRITISH Original

20ns

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Device Part/SMD Number Optn Pins Pkg Flow Lead Rad 20ns/CMOS 24 DIP Mil-Temp Option None 20ns/CMOS 24 FP Mil-Temp Option None 20ns/CMOS 28 FP , FP Mil-Temp Option None 15.5ns/CMOS 28 FP Mil-Temp Option None 20ns/TTL 24 DIP Mil-Temp Option None 20ns/TTL 24 FP Mil-Temp Option None None , ://www.dscc.dla.mil/Programs/MilSpec/DocSearch.asp 20ns/TTL -
Original
UT22VP10C-20PCX UT22VP10C-20UCX UT22VP10C-20WCX UT22VP10E-15PCX UT22VP10E-15UCX UT22VP10E-15WCX UT22VP10T-20UPC UT22VP10T-20UCX UT22VP10T-20PCX 22VP10
Abstract: JEDEC AC DDR200 JEDEC tRCD (Row-to-Column delay ) 20ns DDR333 , DDR266 tRCD 20ns 3 (20ns / 7.5ns = 2.7 ) 1 (EQ 1) t RCD 22.5ns (22.5ns , tRCD DDR200 ( tRCD = 20ns) 0ns 10ns 20ns 30ns ACT NOP READ NOP CK# CK tCK = 10ns tRCD DDR266 ( tRCD ) = tRCD (JEDEC) = 2 × tCK = 20ns ( = 22.5ns) 0ns , DDR266 DDR333 DDR400 -75 -75Z -75E -6T -5B 20ns 20ns 20ns 20ns 20ns Micron Technology
Original
TN-46-13 MT46V64M8 micron ddr DDR400- TN4613
Abstract: precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time (=tRAS) 48ns , 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Samsung Electronics
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k4s641632d-tc80 samsung date code sAMSUNG PC100-322-620 PC100 M366S0824DT0-C80/C1H/C1L K4S641632D-TC80/ 4K/64 100MH
Abstract: , RX_DV CRS RX_CLK 20ns 52ns IDLE 2.3 DP83848 MII 100Mb DP83849 MII 5 , RMII 4ns IDLE tpPhyTxRMII RMII PVT 20ns 20ns 0 RMII 20ns DP83849 4ns 0.4 11.2 RMII 10.8 PVT 1 RMII tpPhyTxRMII 3.2 RMII PVT 20ns 2 RMII , 8. Phy 100Mb 125MHz Phy 1 5 DP83849 8ns RMII DP83848 REF_CLK2 20ns CRS 20ns IDLE RMII RMII 7 www.national.com AN-1507 DP83849 3.0 RMII AN National Semiconductor
Original
DP83848C DP83848I DP83848YB DP83848M DP83848T DP83848H 100BaseF DP83848K DP83849I DP83849ID DP83849IF
Abstract: 10ns 10ns 12ns 15ns 15ns 20ns 20ns PDM41532 PDM41532 PDM41532 PDM41532 PDM41532 PDM41532 PDM41532 10ns 10ns 12ns 15ns 15ns 20ns 20ns 32Kx16, 3 volt 10ns PDM31516 10ns PDM31516 12ns PDM31516 15ns PDM31516 15ns PDM31516 20ns PDM31516 20ns PDM31516 32Kx16, 5 volt 10ns PDM41516 10ns PDM41516 12ns PDM41516 15ns PDM41516 15ns PDM41516 20ns PDM41516 20ns PDM41516 32KX8, 3 volt PDM31256 PDM31256 IXYS
Original
RC336 TMS320 AN07 accelerator rockwell modem RCDL56 AN-07 PDM41256 PDM31096 PDM31034
Abstract: time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time (=tRAS) 48ns , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h Samsung Electronics
Original
DIMM 1999 M366S0424CT0-C80/C1H/C1L K4S641632C-TC80/C1H/C1L
Abstract: Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h Samsung Electronics
Original
K4S281632M-TC80 samsung dimm 128mb pc100 32mx64 M366S0924MT0-C80/C1H/C1L K4S281632M-TC80/C1H/C1L
Abstract: 32Kx24 EDI8F2432C-15ns x32 1M 2M 256Kx8 EDIBFB257C-70ns ECH8FB259C-20ns 64Kx24 EDI8F2464C , -12na EDI8F32128C-20ns EOI8L32128C-15na Flash 32Kx16 4M 512Kx8 EDI8FB512C-20ns 256Kx16 EW8F16256C-20ns EW6F16257C-20ns EDI8F24128C-20ns EDI8F24129C-20ns 512Kx8 EDt7F8512C-100ns EEPROM ED»F3420C , EDI9F61025C-70ns 256KX32 EDI8 F32256B-12na EDI8F32256C-20na EDI8F32257C-20ns 1Mx8 ECH8F81024C -
OCR Scan
l6sr EDI8F1664C-30 EDI8F2432C-15 EDIBFB257C-70 ECH8FB259C-20 EDI8F2464C-15 EDI8F32
Abstract: 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate , Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS Samsung Electronics
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KM416S8030BT 128SD 256SD KMM366S824DT KMM366S1623DT KMM374S1623DT KMM366S1724T
Abstract: precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h , (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h 30 , (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns Samsung Electronics
Original
30h80 M366S0924CTS-C1H/C1L K4S281632C-TC1H/C1L
Abstract: Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h Samsung Electronics
Original
M366S0924ATS-C80/C1H/C1L K4S281632A-TC80/C1H/C1L
Abstract: - 00h 00h 2 27 Minimum row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h 30 Minimum activate precharge time (=tRAS) 50ns , row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns Samsung Electronics
Original
16MX8 32MX72 intel date code format M377S3323AT0 M377S1723AT3-C1H/C1L 16MX72 K4S280832A-TC1H/C1L
Abstract: ) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time (=tRAS) 48ns 50ns 50ns , time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD Samsung Electronics
Original
64Mb samsung SDRAM M366S0424DTS-C80/C1H/C1L
Abstract: - 00h 00h 2 27 Minimum row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h 30 Minimum activate precharge time (=tRAS) 50ns , row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns Samsung Electronics
Original
K4S280832B-TC1H K4S280832 M377S1723BT3-C1H/C1L K4S280832B-TC1H/C1L
Abstract: row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns , row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns , 2 27 Minimum row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row Samsung Electronics
Original
M377S1723CT3-C1H/C1L K4S280832C-TC1H/C1L
Abstract: 200MHz(5ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 4.5ns 2.0ns 183MHz(5.5ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.0ns 2.0ns 166MHz(6ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.0ns HY57V641620HG(L)T-55I CAS Latency tRCD tRAS tRC tRP tAC tOH 183MHz(5.5ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.0ns 2.0ns 166MHz(6ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.0ns 143MHz(7ns) 3CLKs 3CLKs 7CLKs Hynix Semiconductor
Original
HY57V641620HG-I
Abstract: 7CLKs 7CLKs 7CLKs tRC 10CLKs 10CLKs 10CLKs tRP 3CLKs 3CLKs 3CLKs tAC 5.4ns 5.4ns 5.4ns tOH 2.0ns 2.0ns 2.0ns HY57V641620HG(L)T-55I C A S Latency 183MHz(5.5ns) 166MHz(6ns) 143MHz(7ns) 3CLKs 3CLKs 3CLKs , 5.4ns 5.4ns tOH 2.0ns 2.0ns 2.0ns HY57V641620HG(L)T-6I C A S Latency 166MHz(6ns) 143MHz(7ns) 133MHz , 3CLKs 3CLKs tAC 5.4ns 5.4ns 5.4ns tOH 2.0ns 2.0ns 2.0ns HY57V641620HG(L)T-7I C A S Latency 143MHz , 9CLKs 9CLKs 7CLKs tRP 3CLKs 3CLKs 2CLKs tAC 5.4ns 5.4ns 6ns tOH 2.0ns 2.0ns 2.0ns HY57V641620HG(L Hynix Semiconductor
Original
Abstract: 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate , latency of 1 - - - 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns Samsung Electronics
Original
M366S0424CTS-C80/C1H/C1L
Abstract: time Command and Address signal input hold time Data signal input setup time 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7 ns 20ns 20ns 20ns 50ns 128bytes 256bytes (2K-bit) SDRAM 12 8 1 Row 64 bits LVTTL 10ns 6ns , input hold time Data signal input setup time 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7 ns 20ns 20ns 20ns 50ns , input hold time Data signal input setup time 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7 ns 20ns 20ns 20ns 50ns , input setup time 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7 ns 20ns 20ns 20ns 50ns 128bytes 256bytes (2K -
OCR Scan
KMM464S424CT KMM464S824CT KMM464S924T KMM464S1724T KMM464S424CT-GH/GL 4MX16
Abstract: precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h , 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 14h 14h 28 Minimum row active to row active delay (tRRD) 20ns 20ns 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 14h 14h 30 Minimum activate precharge time (=tRAS) 50ns 50ns Samsung Electronics
Original
M374S3323CT0-C1H M366S1724CT0-C1H/C1L
Abstract: 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate , Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS -
OCR Scan
20P-M EL7104C EL7114C EL7134C EL7144C EL7202C
Abstract: precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time (=tRAS) 48ns , 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Altera
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EP312 EP324 P5AC312-25 D5AC312 D5AC312-25 p5ac312 N5AC324 P5AC312-30
Abstract: time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time (=tRAS) 48ns , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h -
OCR Scan
256KX1 64KX1 dram 64kx1 M66212P M66210P 64k*1 DRAM M66200AP/AFP 24P4D 24P2N-B 256K- M66210 M66211
Abstract: 60ns 35ns 30ns 15ns 40ns -7 130ns 70ns 40ns 35ns 20ns 50ns GENERAL -
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PIN25 N7967 LC821034 LC821034CCD VL-1747 2S-10
Abstract: Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h -
Original
LC821033 WR 130 D6DA N7971 LC821033CCD LV-1753 8000I
Abstract: JEDEC AC DDR200 JEDEC tRCD (Row-to-Column delay ) 20ns DDR333 , DDR266 tRCD 20ns 3 (20ns / 7.5ns = 2.7 ) 1 (EQ 1) t RCD 22.5ns (22.5ns , tRCD DDR200 ( tRCD = 20ns) 0ns 10ns 20ns 30ns ACT NOP READ NOP CK# CK tCK = 10ns tRCD DDR266 ( tRCD ) = tRCD (JEDEC) = 2 × tCK = 20ns ( = 22.5ns) 0ns , DDR266 DDR333 DDR400 -75 -75Z -75E -6T -5B 20ns 20ns 20ns 20ns 20ns -
OCR Scan
24/26-P
Abstract: Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h 14h 29 Minimum RAS to CAS delay (=tRCD) 20ns 20ns 20ns 14h 14h 14h 30 Minimum activate precharge time , 00h 00h 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 20ns 14h 14h 14h 28 Minimum row active to row active delay (tRRD) 16ns 20ns 20ns 10h 14h -
OCR Scan
MT4C4M4 24/26-PIN
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