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20V P-Channel Power MOSFET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Name Status Description Features Package Si3586DV Si3586DV N- and P-Channel 20-V (D-S) MOSFET , )=0.235Ω@-4.5V 1206-8 ChipFET Qg , SO-8 Si7110DN Si7110DN N-Channel 20-V (D-S) MOSFET RDS(on)=0.0053Ω@10V; RDS(on)=0.078Ω@4.5V; Qg , N-Channel 20-V (D-S) MOSFET RDS(on)=0.0034Ω@10V; RDS(on)=0.0055Ω@4.5V; Qg=24nC SMD PolarPAK , Power : HIGH-SIDE SWITCH, P-Channel MOSFET MOSFETs Product Name Status Description Features ... Vishay Intertechnology
Original
datasheet

16 pages,
31.05 Kb

Schottky Diode 40V 2A schottky diode 30v Power MOSFET mosfet switch TEXT
datasheet frame
Abstract: -6 Si3493BDV Si3493BDV P-Channel 20-V (D-S),MOSFET 1.8V(G-S); PWM Optimized VDS = -20 V, ID = -8 A rDS(on , milliohms SMD MICRO FOOT 1.6 x 1.6 Si8499DB Si8499DB P-Channel 20V (D-S) MOSFET VDS = -20 V, ID = -16 A , milliohms SMD PowerPAK SC-75 SC-75 SiA429DJT SiA429DJT NEW P-Channel 20V (D-S) MOSFET VDS = -20 V, ID = -12 , P-Channel 20-V (D-S) MOSFET VDS = -20 V, ID = -9 A rDS(on) = 0.058 ohms SMDPowerPAK SC , N-Channel 1.8-V (G-S) Rated MOSFET with Trench Schottky Diode VDS = 20V, ID=4.5A; If=2A SMD rDS(on) = ... Vishay Intertechnology
Original
datasheet

24 pages,
69.96 Kb

TEXT
datasheet frame
Abstract: SPC6604 SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V/2.8A,RDS ... SYNC Power
Original
datasheet

11 pages,
259.83 Kb

SPC6604ST6RG SPC6604 N and P MOSFET TEXT
datasheet frame
Abstract: SPC4703 SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced , FEATURES P-Channel -20V/-3.4A,RDS(ON)= 90m@VGS=-4.5V -20V, IF = 1A, VF ... SYNC Power
Original
datasheet

9 pages,
220.53 Kb

MOSFET 20V 100A DIODE marking 8L Bi-Directional P-Channel mosfet schottky diode 100A MOSFET with Schottky Diode P-channel Trench MOSFET diode TA 20-08 SPC4703 TEXT
datasheet frame
Abstract: Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power , SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in ... SYNC Power
Original
datasheet

11 pages,
260.22 Kb

SPC6332S36RG SPC6332 SC-70-6L power mosfet 5a 20v TEXT
datasheet frame
Abstract: SPC1016 SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC1016 SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V ... SYNC Power
Original
datasheet

11 pages,
262.28 Kb

SPC1016S56RG SPC1016 N and P MOSFET MARKING 4A sot-563 TEXT
datasheet frame
Abstract: SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V ... SYNC Power
Original
datasheet

11 pages,
230.12 Kb

SPC6332S36RG SPC6332 sot-363 MARKING SC-70-6L N and P MOSFET TEXT
datasheet frame
Abstract: Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power , SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in ... SYNC Power
Original
datasheet

11 pages,
260.59 Kb

SPC6332S36RG SPC6332 SOT-363 mosfet sot-363 Marking G1 SC-70-6L P-Channel mosfet sot-363 sot-363 n-channel mosfet SPC6332S36RGB TEXT
datasheet frame
Abstract: constantly shrinking in size, increasing the power density. WE CAN HELP you out. Our OptiMOS®2 power MOSFET , Integrated switch = Gate driver + power MOSFETs High-speed MOSFET driver in single & dual version Used , Product Description Voltage Class Page P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -30V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 ... Infineon Technologies
Original
datasheet

18 pages,
677.71 Kb

82 sot363-6 bsl307sp BSO612CV G BSP373 bss84p BSV236SP BUZ30a P-Channel 200V MOSFET TSOP6 55V MOSFET P-Channel n-channel 250V power mosfet smd buz341 BSS138N SOT323 MOSFET P BUZ345 tda 2850 BS0615NV BUZ350 MOSFET P SOT-23 sso8 package TEXT
datasheet frame
Abstract: ACE632 ACE632 N&P Pair Enhancement Mode MOSFET Description The ACE632 ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology , computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features  N-Channel ACE Technology
Original
datasheet

11 pages,
945.69 Kb

ACE632 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
STB35NF10 STB35NF10 N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET STD40NF02L STD40NF02L N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER STRIPFET POWER MOSFET STP35NF10 STP35NF10 N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET STP40NS15 STP40NS15 N-CHANNEL 150V 0.042 0.008 OHM -70A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET STP80NF10 STP80NF10
/datasheets/files/stmicroelectronics/stonline/books/tocnew/ds/192.htm
STMicroelectronics 20/10/2000 14.08 Kb HTM 192.htm
100 FETKY Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel w/20V 1.0 A Schottky Diode NTTD4401F/D NTTD4401F/D  (92.0kB) 6 100 FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual (78.0kB) 3 100 Power MOSFET -20V, -1.3 A, P-Channel SOT-23 NTR1P02LT1/D NTR1P02LT1/D  (124.0kB) 8 100 Power MOSFET -20V, -4.9 A , Single P-Channel ChipFET™ NTHS5443T1/D NTHS5443T1/D  (68.0kB) 6 100 Power ) 4 100 Power MOSFET 20V, 5.1 A, Single N-Channel TSOP-6 NTGS3446/D NTGS3446/D  (136.0kB) 5 100
/datasheets/files/on-semiconductor/taxonomy/fets.htm
On Semiconductor 27/09/2007 87.91 Kb HTM fets.htm
leading supplier of advanced power semiconductors, has expanded their SO-8 FETKY TM product line with the addition of three new devices. These new FETKYs combine a P-channel HEXFET® power MOSFET and a International Rectifier - A Power Semiconductor Company - MOSFET and the Schottky diode are electrically isolated to provide design flexibility. The -20V P-channel 58mW@-4.5V -5.0A@25ºC 0.5V, 1.5A IRF7324D1 IRF7324D1 -20V P-channel 90mW@-4.5V
/datasheets/files/international-rectifier/docs/wcd00000/wcd0009a.htm
International Rectifier 06/10/1998 5.77 Kb HTM wcd0009a.htm
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET STB160NF03L STB160NF03L   N-CHANNEL 20V - 0.016 OHM - 36A - D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET STB36NF03L STB36NF03L   N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET   N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET STRIPFET POWER MOSFET STS4DPFS20L STS4DPFS20L   P-CHANNEL 20V 0.06 OHM 4A SO-8
/datasheets/files/stmicroelectronics/stonline/books/toc/ds/192-v1.htm
STMicroelectronics 02/02/2001 506.01 Kb HTM 192-v1.htm
INTERNATIONAL RECTIFIER ADDS 2 NEW SERIES OF SO-8 POWER MOSFETs FOR PORTABLE APPLICATIONS These new Gen5 MOSFET technology allows portable power system designers to select either lower gate charge for International Rectifier (IR) has expanded its popular SO-8 HEXFET ® power MOSFET line-up with the addition of Information Center or your local Sales Rep . For other related information visit the HEXFET Power MOSFET International Rectifier - A Power Semiconductor Company -
/datasheets/files/international-rectifier/docs/wcd00001/wcd001cc.htm
International Rectifier 06/10/1998 9.49 Kb HTM wcd001cc.htm
® Power MOSFET and Schottky Diode into a Single Package (August 22,1997) International Rectifier Launches New FETKY Technology For High Density Power Converters (May 13, 1996). Try the FETKY TM 25 o C Schottky Datasheet Micro8 IRF7521D1 IRF7521D1 20V N-channel 135m W @ 4.5V IRF7524D1 IRF7524D1 20V P-channel 270m W @ -4.5V -1.7A 0.5V, 1.5A IRF7526D1 IRF7526D1 30V N-channel 35m W @ 10V 6.4A @ 250C 0.42V, 1.5A IRF7422D2 IRF7422D2 -20V
/datasheets/files/international-rectifier/docs/wcd00000/wcd00033.htm
International Rectifier 06/10/1998 11.23 Kb HTM wcd00033.htm
technology that will double the present cell density of our TMOS Power MOSFET's. This new technology will power devices such as power MOSFET's with lower R DS(on) , IGBTs with freewheeling diodes, and AN1520/D AN1520/D HDTMOS Power MOSFET's Excel in Synchronous Applications Now AN1541/D AN1541/D Ballast High Voltage TMOS Motion Control IGBT Power Conversion TO-264 and D3PAK Power Conversion IGBT Battery Charger Surface Mount Devices New Products The
/datasheets/files/motorola/design-n/ppd/html/tmos.htm
Motorola 25/11/1996 26.99 Kb HTM tmos.htm
Introducing. FETKY tm SO-8 A HEXFET ® Power MOSFET and Schottky housed in a single space-saving SO-8 package to shrink and simplify power conversion designs! .a first from International Rectifier The FETKY The only power device in an SO-8 to feature. Generation V HEXFET ® ; Power MOSFETs with up to 65% smaller die sizes plus ultra-low V F Schottkys and maximum power handling capability! The Results? Big space and assembly
/datasheets/files/international-rectifier/docs/wcd00001/wcd00192.htm
International Rectifier 06/10/1998 9.88 Kb HTM wcd00192.htm
INTERNATIONAL RECTIFIER INTRODUCES THE MICRO8 FETKY TM INTEGRATING A HEXFET ® POWER MOSFET AND SCHOTTKY HEXFET ® power MOSFET and a Schottky diode in a single small outline package. Hot on the heels of International Rectifier - A Power Semiconductor Company - 1.1 mm profile, the Micro8 FETKY TM is a perfect replacement for a discrete MOSFET and Schottky also reduce assembly costs in power converters and other power subsystems for high density
/datasheets/files/international-rectifier/docs/wcd00001/wcd00195.htm
International Rectifier 06/10/1998 6.9 Kb HTM wcd00195.htm
generate a constant current for low power applications. It is the power MOSFET of choice for mission High Side Load and Power Management Solution Highest ESD Rating of any S0-8 Product Low , avalanche rated, N-channel enhancement mode MOSFET. It features a 30V breakdown voltage that provides additional operating safety margins over competitive 20V products. This is extremely important in 15V & 18V heat sinks. As the only 80V full-bridge MOSFET driver available in the industry, it's the perfect
/datasheets/files/harris/litfets/range.htm
Harris 18/08/1997 8.47 Kb HTM range.htm