500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
PMP5578 Texas Instruments Boost (20V@4A) pdf Buy
ISL8121IRZ Intersil Corporation 3V to 20V, Two-Phase Buck PWM Controller with Integrated 4A MOSFET Drivers; QFN24; Temp Range: -40° to 85°C pdf Buy
ISL8121IRZ-T Intersil Corporation 3V to 20V, Two-Phase Buck PWM Controller with Integrated 4A MOSFET Drivers; QFN24; Temp Range: -40° to 85°C pdf Buy

Search Stock

Part Manufacturer Description Last Check Distributor Ordering
20V100 - XXX 37 (Sep 2016) Area51 Buy
20V100 Absolute EMS XXX Date Code: 09 143 (Sep 2016) Area51 Buy
20V60 - XXX 580 (Sep 2016) Area51 Buy
20VB1 - 20VB1 CORCOM FILTER N16C5B 50 (Aug 2016) basicEparts Buy
20VB1 - - 9 (Aug 2016) Bisco Industries Buy
20VB1 TE Connectivity Filter, RFI; 20 A; 2250 VDC (Line-to-Ground), 1450 VDC (Line-to-Line) 372 from $18.50 (Sep 2016) Allied Electronics Buy
20VB1 TE Connectivity Power Line Filter General Purpose RFI 50Hz/60Hz 20A 250VAC Quick Connect Flange Mount 10 from $14.02 (Aug 2016) Arrow Electronics Buy
20VB1 TE Connectivity Power Line Filter 50Hz/60Hz 20A 250VAC Quick Connect Flange Mount - Bulk (Alt: 20VB1) from $16.8531 (Aug 2016) Avnet Buy
20VB1 TE Connectivity FILTER LINE FAST TERM 20A from £11.8866 (Aug 2016) Digi-Key Buy
20VB1 TE Connectivity POWER LINE FILTER, EMI/RFI, 20A, 700UA from $17.76 (Aug 2016) element14 Asia-Pacific Buy
20VB1 TE Connectivity POWER LINE FILTER, EMI/RFI, 20A, 700UA from £13.92 (Aug 2016) Farnell element14 Buy
20VB1 TE Connectivity - 162 (Aug 2016) Gerber Electronics Buy
20VB1 TE Connectivity 1-6609021-1 (Aug 2016) Heilind Electronics Buy
20VB1 TE Connectivity 1-6609021-1 (Sep 2016) Interstate Connecting Components Buy
20VB1 TE Connectivity Power Line Filters 20A 1/4" FASTON FLANGE MOUNT 37 from $13.96 (Sep 2016) Mouser Electronics Buy
20VB1 TE Connectivity RFI POWER LINE FILTER, 20A, 700UA; Filter Type:EMI, RFI; Current Rating:20A; Voltage Rating:250VAC; Leakage Current Max:700 A; Capacitance:0.012 F; Inductance Min:440 H; Filter Terminals:Quick Connect; Product Range:B Series ;RoHS Compliant: Yes 68 from $16.62 (Aug 2016) Newark element14 Buy
20VB1 TE Connectivity 120 V, 50/60 HZ, SINGLE PHASE EMI FILTER 1 from $19.50 (Aug 2016) Quest Components Buy
20VB1 TE Connectivity Power Line Filter General Purpose RFI 50Hz/60Hz 20A 250VAC Quick Connect Flange Mount 84 from $15.15 (Aug 2016) Sager Buy
20VB1 TE Connectivity Power Line Filters 20A 1/4" FASTON FLANGE MOUNT from $15.24 (Aug 2016) TTI Buy
20VB1 TE Connectivity Power Line Filter General Purpose RFI 50Hz/60Hz 20A 250VAC Quick Connect Flange Mount 10 from $16.34 (Aug 2016) Verical Buy

20V P-Channel Power MOSFET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Name Status Description Features Package Si3586DV Si3586DV N- and P-Channel 20-V (D-S) MOSFET , )=0.235Ω@-4.5V 1206-8 ChipFET Qg , SO-8 Si7110DN Si7110DN N-Channel 20-V (D-S) MOSFET RDS(on)=0.0053Ω@10V; RDS(on)=0.078Ω@4.5V; Qg , N-Channel 20-V (D-S) MOSFET RDS(on)=0.0034Ω@10V; RDS(on)=0.0055Ω@4.5V; Qg=24nC SMD PolarPAK , Power : HIGH-SIDE SWITCH, P-Channel MOSFET MOSFETs Product Name Status Description Features ... Vishay Intertechnology
Original
datasheet

16 pages,
31.05 Kb

Schottky Diode 40V 2A Power MOSFET mosfet switch TEXT
datasheet frame
Abstract: -6 Si3493BDV Si3493BDV P-Channel 20-V (D-S),MOSFET 1.8V(G-S); PWM Optimized VDS = -20 V, ID = -8 A rDS(on , milliohms SMD MICRO FOOT 1.6 x 1.6 Si8499DB Si8499DB P-Channel 20V (D-S) MOSFET VDS = -20 V, ID = -16 A , milliohms SMD PowerPAK SC-75 SC-75 SiA429DJT SiA429DJT NEW P-Channel 20V (D-S) MOSFET VDS = -20 V, ID = -12 , P-Channel 20-V (D-S) MOSFET VDS = -20 V, ID = -9 A rDS(on) = 0.058 ohms SMDPowerPAK SC , N-Channel 1.8-V (G-S) Rated MOSFET with Trench Schottky Diode VDS = 20V, ID=4.5A; If=2A SMD rDS(on) = ... Vishay Intertechnology
Original
datasheet

24 pages,
69.96 Kb

TEXT
datasheet frame
Abstract: SPC6604 SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V/2.8A,RDS ... SYNC Power
Original
datasheet

11 pages,
259.83 Kb

SPC6604ST6RG SPC6604 N and P MOSFET TEXT
datasheet frame
Abstract: SPC4703 SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced , FEATURES P-Channel -20V/-3.4A,RDS(ON)= 90m@VGS=-4.5V -20V, IF = 1A, VF ... SYNC Power
Original
datasheet

9 pages,
220.53 Kb

MOSFET 20V 100A DIODE marking 8L Bi-Directional P-Channel mosfet schottky diode 100A MOSFET with Schottky Diode P-channel Trench MOSFET diode TA 20-08 SPC4703 TEXT
datasheet frame
Abstract: Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power , SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in ... SYNC Power
Original
datasheet

11 pages,
260.22 Kb

SPC6332S36RG SPC6332 SC-70-6L power mosfet 5a 20v TEXT
datasheet frame
Abstract: SPC1016 SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC1016 SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V ... SYNC Power
Original
datasheet

11 pages,
262.28 Kb

SPC1016S56RG SPC1016 N and P MOSFET MARKING 4A sot-563 TEXT
datasheet frame
Abstract: SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in , inverter FEATURES N-Channel 20V ... SYNC Power
Original
datasheet

11 pages,
230.12 Kb

SPC6332S36RG SPC6332 sot-363 MARKING SC-70-6L N and P MOSFET TEXT
datasheet frame
Abstract: Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power , SPC6332 SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench , as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in ... SYNC Power
Original
datasheet

11 pages,
260.59 Kb

SPC6332S36RG SPC6332 SOT-363 mosfet sot-363 Marking G1 SC-70-6L P-Channel mosfet sot-363 sot-363 n-channel mosfet SPC6332S36RGB TEXT
datasheet frame
Abstract: constantly shrinking in size, increasing the power density. WE CAN HELP you out. Our OptiMOS®2 power MOSFET , Integrated switch = Gate driver + power MOSFETs High-speed MOSFET driver in single & dual version Used , Product Description Voltage Class Page P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -30V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 ... Infineon Technologies
Original
datasheet

18 pages,
677.71 Kb

12 mosfet sot23 82 sot363-6 bsl307sp BSO612CV G BSP373 bss84p BSV236SP BUZ30a P-Channel 200V MOSFET TSOP6 buz341 55V MOSFET P-Channel BSS138N n-channel 250V power mosfet smd BUZ345 BS0615NV SOT323 MOSFET P BUZ350 MOSFET P SOT-23 sso8 package TEXT
datasheet frame
Abstract: ACE632 ACE632 N&P Pair Enhancement Mode MOSFET Description The ACE632 ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology , computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features  N-Channel ACE Technology
Original
datasheet

11 pages,
945.69 Kb

ACE632 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
STB35NF10 STB35NF10 N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET STD40NF02L STD40NF02L N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER STRIPFET POWER MOSFET STP35NF10 STP35NF10 N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET STP40NS15 STP40NS15 N-CHANNEL 150V 0.042 0.008 OHM -70A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET STP80NF10 STP80NF10
/datasheets/files/stmicroelectronics/stonline/books/tocnew/ds/192.htm
STMicroelectronics 20/10/2000 14.08 Kb HTM 192.htm
100 FETKY Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel w/20V 1.0 A Schottky Diode NTTD4401F/D NTTD4401F/D  (92.0kB) 6 100 FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual (78.0kB) 3 100 Power MOSFET -20V, -1.3 A, P-Channel SOT-23 NTR1P02LT1/D NTR1P02LT1/D  (124.0kB) 8 100 Power MOSFET -20V, -4.9 A , Single P-Channel ChipFET™ NTHS5443T1/D NTHS5443T1/D  (68.0kB) 6 100 Power ) 4 100 Power MOSFET 20V, 5.1 A, Single N-Channel TSOP-6 NTGS3446/D NTGS3446/D  (136.0kB) 5 100
/datasheets/files/on-semiconductor/taxonomy/fets.htm
On Semiconductor 27/09/2007 87.91 Kb HTM fets.htm
leading supplier of advanced power semiconductors, has expanded their SO-8 FETKY TM product line with the addition of three new devices. These new FETKYs combine a P-channel HEXFET® power MOSFET and a International Rectifier - A Power Semiconductor Company - MOSFET and the Schottky diode are electrically isolated to provide design flexibility. The -20V P-channel 58mW@-4.5V -5.0A@25ºC 0.5V, 1.5A IRF7324D1 IRF7324D1 -20V P-channel 90mW@-4.5V
/datasheets/files/international-rectifier/docs/wcd00000/wcd0009a.htm
International Rectifier 06/10/1998 5.77 Kb HTM wcd0009a.htm
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET STB160NF03L STB160NF03L   N-CHANNEL 20V - 0.016 OHM - 36A - D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET STB36NF03L STB36NF03L   N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET   N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET STRIPFET POWER MOSFET STS4DPFS20L STS4DPFS20L   P-CHANNEL 20V 0.06 OHM 4A SO-8
/datasheets/files/stmicroelectronics/stonline/books/toc/ds/192-v1.htm
STMicroelectronics 02/02/2001 506.01 Kb HTM 192-v1.htm
INTERNATIONAL RECTIFIER ADDS 2 NEW SERIES OF SO-8 POWER MOSFETs FOR PORTABLE APPLICATIONS These new Gen5 MOSFET technology allows portable power system designers to select either lower gate charge for International Rectifier (IR) has expanded its popular SO-8 HEXFET ® power MOSFET line-up with the addition of Information Center or your local Sales Rep . For other related information visit the HEXFET Power MOSFET International Rectifier - A Power Semiconductor Company -
/datasheets/files/international-rectifier/docs/wcd00001/wcd001cc.htm
International Rectifier 06/10/1998 9.49 Kb HTM wcd001cc.htm
® Power MOSFET and Schottky Diode into a Single Package (August 22,1997) International Rectifier Launches New FETKY Technology For High Density Power Converters (May 13, 1996). Try the FETKY TM 25 o C Schottky Datasheet Micro8 IRF7521D1 IRF7521D1 20V N-channel 135m W @ 4.5V IRF7524D1 IRF7524D1 20V P-channel 270m W @ -4.5V -1.7A 0.5V, 1.5A IRF7526D1 IRF7526D1 30V N-channel 35m W @ 10V 6.4A @ 250C 0.42V, 1.5A IRF7422D2 IRF7422D2 -20V
/datasheets/files/international-rectifier/docs/wcd00000/wcd00033.htm
International Rectifier 06/10/1998 11.23 Kb HTM wcd00033.htm
technology that will double the present cell density of our TMOS Power MOSFET's. This new technology will power devices such as power MOSFET's with lower R DS(on) , IGBTs with freewheeling diodes, and AN1520/D AN1520/D HDTMOS Power MOSFET's Excel in Synchronous Applications Now AN1541/D AN1541/D Ballast High Voltage TMOS Motion Control IGBT Power Conversion TO-264 and D3PAK Power Conversion IGBT Battery Charger Surface Mount Devices New Products The
/datasheets/files/motorola/design-n/ppd/html/tmos.htm
Motorola 25/11/1996 26.99 Kb HTM tmos.htm
Introducing. FETKY tm SO-8 A HEXFET ® Power MOSFET and Schottky housed in a single space-saving SO-8 package to shrink and simplify power conversion designs! .a first from International Rectifier The FETKY The only power device in an SO-8 to feature. Generation V HEXFET ® ; Power MOSFETs with up to 65% smaller die sizes plus ultra-low V F Schottkys and maximum power handling capability! The Results? Big space and assembly
/datasheets/files/international-rectifier/docs/wcd00001/wcd00192.htm
International Rectifier 06/10/1998 9.88 Kb HTM wcd00192.htm
INTERNATIONAL RECTIFIER INTRODUCES THE MICRO8 FETKY TM INTEGRATING A HEXFET ® POWER MOSFET AND SCHOTTKY HEXFET ® power MOSFET and a Schottky diode in a single small outline package. Hot on the heels of International Rectifier - A Power Semiconductor Company - 1.1 mm profile, the Micro8 FETKY TM is a perfect replacement for a discrete MOSFET and Schottky also reduce assembly costs in power converters and other power subsystems for high density
/datasheets/files/international-rectifier/docs/wcd00001/wcd00195.htm
International Rectifier 06/10/1998 6.9 Kb HTM wcd00195.htm
generate a constant current for low power applications. It is the power MOSFET of choice for mission High Side Load and Power Management Solution Highest ESD Rating of any S0-8 Product Low , avalanche rated, N-channel enhancement mode MOSFET. It features a 30V breakdown voltage that provides additional operating safety margins over competitive 20V products. This is extremely important in 15V & 18V heat sinks. As the only 80V full-bridge MOSFET driver available in the industry, it's the perfect
/datasheets/files/harris/litfets/range.htm
Harris 18/08/1997 8.47 Kb HTM range.htm