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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AAT8107 AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 AAT8107 low threshold , AAT8107 AAT8107 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C , 8107.2004.04.1.0 AAT8107 AAT8107 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise , 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge , 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel ... | Original |
6 pages, |
AAT8107IAS-T1 AAT8107 8107 p-CHANNEL POWER MOSFET 20V P-Channel Power MOSFET AAT8107 abstract |
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| Abstract: AAT8107 AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 AAT8107 low threshold , Junction-to-Foot 1 1 1 1 AAT8107 AAT8107 20V P-Channel Power MOSFET Electrical Characteristics Symbol , testing. 2 8107.2003.04.0.62 AAT8107 AAT8107 20V P-Channel Power MOSFET Typical Characteristics (TJ , ) 8107.2003.04.0.62 3 AAT8107 AAT8107 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless , AAT8107 AAT8107 20V P-Channel Power MOSFET Ordering Information Package SOP-8 Part Number Marking ... | Original |
6 pages, |
AAT8107IAS-T1 AAT8107 8107 AAT8107 abstract |
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| Abstract: AAT7157 AAT7157 20V P-Channel Power MOSFET General Description The AAT7157 AAT7157 low threshold 20V, dual , 7157.2005.05.1.1 1 AAT7157 AAT7157 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless , AAT7157 AAT7157 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Output , 7157.2005.05.1.1 AAT7157 AAT7157 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number , P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Gate Charge ... | Original |
6 pages, |
p-channel power mosfet P-channel POWER AAT7157IAS-T1 AAT7157 Dual P-Channel MOSFET TA 7157 AAT7157 abstract |
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| Abstract: AAT8113 AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 AAT8113 low threshold 20V, P-Channel MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using an , 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless , AAT8113 AAT8113 20V P-Channel Power MOSFET Typical Characteristics Transfer Characteristics Output , ) 3 AAT8113 AAT8113 20V P-Channel Power MOSFET Typical Characteristics Gate Charge 5 1000 VD = ... | Original |
6 pages, |
AAT8113IAS-T1 AAT8113 AAT8113 abstract |
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| Abstract: AAT7157 AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 AAT7157 low threshold , AAT7157 AAT7157 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C , 7157.2004.04.1.0 AAT7157 AAT7157 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise , ) 7157.2004.04.1.0 3 AAT7157 AAT7157 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless , 20 VDS (V) 4 7157.2004.04.1.0 AAT7157 AAT7157 20V P-Channel Power MOSFET Ordering ... | Original |
6 pages, |
TA 7157 AAT7157IAS-T1 AAT7157 AAT7157 abstract |
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| Abstract: AAT8113 AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 AAT8113 low threshold , Junction-to-Foot 1 1 1 1 AAT8113 AAT8113 20V P-Channel Power MOSFET Electrical Characteristics Symbol , 8113.2003.08.0.62 AAT8113 AAT8113 20V P-Channel Power MOSFET Typical Characteristics Transfer Characteristics , 125 150 TJ (°C) 3 AAT8113 AAT8113 20V P-Channel Power MOSFET Typical Characteristics Gate , 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel ... | Original |
6 pages, |
AAT8113IAS-T1 AAT8113 AAT8113 abstract |
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| Abstract: AAT7357 AAT7357 20V P-Channel Power MOSFET General Description Features The AAT7357 AAT7357 is a low , 1 1 1 AAT7357 AAT7357 20V P-Channel Power MOSFET Electrical Characteristics Symbol , subject to production testing. 2 7357.2003.08.0.6 AAT7357 AAT7357 20V P-Channel Power MOSFET Typical , (°C) 7357.2003.08.0.6 3 AAT7357 AAT7357 20V P-Channel Power MOSFET Typical Characteristics (TJ , 7357.2003.08.0.6 AAT7357 AAT7357 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number ... | Original |
6 pages, |
AAT7357ITS-T1 AAT7357 TSSOP-8 footprint AAT7357 abstract |
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| Abstract: AAT7551 AAT7551 20V P-Channel Power MOSFET General Description Features The AAT7551 AAT7551 is a dual low , testing. 2 7551.2003.08.0.61 AAT7551 AAT7551 20V P-Channel Power MOSFET Typical Characteristics (TJ , ) 7551.2003.08.0.61 3 AAT7551 AAT7551 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless , 7551.2003.08.0.61 AAT7551 AAT7551 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part , AAT7551 AAT7551 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any ... | Original |
6 pages, |
SC70JW-8 rd37 AAT7551IJS-T1 AAT7551 AAT7551 abstract |
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| Abstract: AAT7551 AAT7551 20V P-Channel Power MOSFET General Description Features The AAT7551 AAT7551 is a dual low , testing. 2 7551.2003.08.0.61 AAT7551 AAT7551 20V P-Channel Power MOSFET Typical Characteristics (TJ , ) 7551.2003.08.0.61 3 AAT7551 AAT7551 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless , 7551.2003.08.0.61 AAT7551 AAT7551 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part , AAT7551 AAT7551 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any ... | Original |
6 pages, |
SC70JW-8 AAT7551IJS-T1 AAT7551 AAT7551 abstract |
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| Abstract: AAT8515 AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 AAT8515 is a low , 8515.2003.08.0.63 AAT8515 AAT8515 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise , 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge , 8515.2003.08.0.63 AAT8515 AAT8515 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part , Junction-to-Foot 1 100 61 33 120 73.5 40 °C/W °C/W °C/W 1 AAT8515 AAT8515 20V P-Channel Power ... | Original |
6 pages, |
SC70JW-8 AAT8515IJS-T1 AAT8515 AAT8515 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Semi Power TSSOP-8 20 V N-channel TSSOP-8 30 V N-channel TSSOP-8 12 V P-channel TSSOP-8 20 V P-channel TSSOP-8 30 V P-channel TSSOP-8 SOP-8 20 V N-channel SOP-8 30 V 20 V P-channel SOP-8 30 V P-channel SOP-8 30 V N/P-channel V N-channel SC-95/SOT-6 SC-95/SOT-6 SC-95/SOT-6 SC-95/SOT-6 12 V P-channel SC-95/SOT-6 SC-95/SOT-6 SC-95/SOT-6 SC-95/SOT-6 20 V P-channel www.datasheetarchive.com/files/nec/mosfet/macrofam/semipowe.htm |
NEC | 02/02/2000 | 13.28 Kb | HTM | semipowe.htm |
| , -7.5 A, Single P-Channel ChipFETT NTHS4101P NTHS4101P NTHS4101P NTHS4101P Power MOSFET -20 V, -6.7 A NTK3139P NTK3139P NTK3139P NTK3139P Power MOSFET 20 V, 780 mA, Single P-Channel with ESD Protection, SOT-723 Diode, ChipFETT NTHD3101F NTHD3101F NTHD3101F NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, u NTUD3129P NTUD3129P NTUD3129P NTUD3129P Small Signal MOSFET -20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 Package www.datasheetarchive.com/files/on-semiconductor/html/ds/ucoolmosfets.htm |
On Semiconductor | 12/06/2008 | 23.43 Kb | HTM | ucoolmosfets.htm |
| P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER STS4DPFS30L STS4DPFS30L STS4DPFS30L STS4DPFS30L P-CHANNEL 30V 0.07 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER STW40NS15 STW40NS15 STW40NS15 STW40NS15 ST | Power MOSFETs Discrete Devices Transistors Power MOSFETs Part Number Datasheet Description STB35NF10 STB35NF10 STB35NF10 STB35NF10 N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET www.datasheetarchive.com/files/stmicroelectronics/stonline/books/tocnew/ds/192.htm |
STMicroelectronics | 20/10/2000 | 14.08 Kb | HTM | 192.htm |
| Switches NTLJD3115P NTLJD3115P NTLJD3115P NTLJD3115P Power MOSFET -20 V, -4.1 A, uCoolT Dual P-Channel, 2x2 mm WDFN Package NTLJS3113P NTLJS3113P NTLJS3113P NTLJS3113P Power MOSFET -20 V, -9.5 A, uCoolT Single P-Channel NTLJS4114N NTLJS4114N NTLJS4114N NTLJS4114N Power MOSFET 30 V, 7.8 A, uCoolT Single N-Channel NUS3116MT NUS3116MT NUS3116MT NUS3116MT Main Switch Power MOSFET -12 V, -6.2 A, uCoolT Single P-Channel with Dual PNP Low (sat) PNP High Current Transistor WDFN3 NSS20200L NSS20200L NSS20200L NSS20200L 20V 4A LOW VCE(sat) PNP High www.datasheetarchive.com/files/on-semiconductor/html/ds/chargingswitches.htm |
On Semiconductor | 12/06/2008 | 19.35 Kb | HTM | chargingswitches.htm |
| devices. The 20 V P-channel MOSFET is capable of operating at gate voltages as low as 2.7 V. This makes the addition of three new devices. These new FETKYs combine a P-channel HEXFET® power MOSFET and a RDS(on) ID Schottky IRF7321D2 IRF7321D2 IRF7321D2 IRF7321D2 -30V P-channel 58mW@-10V -5.3A@25ºC 0.5V, 3A IRF7322D1 IRF7322D1 IRF7322D1 IRF7322D1 -20V P-channel 58mW@-4.5V -5.0A@25ºC 0.5V, 1.5A IRF7324D1 IRF7324D1 IRF7324D1 IRF7324D1 -20V P-channel 90mW@-4.5V -3.9A@25ºC 0 www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd0009a.htm |
International Rectifier | 06/10/1998 | 5.77 Kb | HTM | wcd0009a.htm |
| P-channel TO-252 TO-262 20 V N-channel TO-262 30 V N 180 V N-channel MP-10 MP-10 MP-10 MP-10 60 V P-channel MP-10 MP-10 MP-10 MP-10 TO-3P 60 V N 60 V P-channel TO-3P TO-126 30 V N-channel TO-126 60 V N-channel TO-126 100 V N-channel TO-126 TO-220 20 V N -channel TO-220 900 V N-channel TO-220 60 V P-channel TO-220 www.datasheetarchive.com/files/nec/mosfet/macrofam/power.htm |
NEC | 02/02/2000 | 24.21 Kb | HTM | power.htm |
| D2 -20V P-channel 90m W @ -4.5V -4.6A @ 250C 0.5V, 3A IRF7322D1 IRF7322D1 IRF7322D1 IRF7322D1 20V P-channel 58m W @ -4.5V -5.0A 0.5V, 1.5A TO Integrating a HEXFET ® Power MOSFET and Schottky Diode into a Single Package (August 22 R DS(on) I D @ 25 o C Schottky Datasheet Micro8 IRF7521D1 IRF7521D1 IRF7521D1 IRF7521D1 20V N-channel 135m W @ 10V 2.4A 0.5V, 1.5A IRF7524D1 IRF7524D1 IRF7524D1 IRF7524D1 20V www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd00033.htm |
International Rectifier | 06/10/1998 | 11.23 Kb | HTM | wcd00033.htm |
| Gen 5 HEXFET Power MOSFET Features & Benefits Benchmark low voltage HEXFET® Power MOSFET body diode characteristics. 2.7V drive capability. Broad product offering: 20V-150V. N-channel and P-channel offerings. Logic-level and standard gate. Through ). International Rectifier advances the art of HEXFET® Power MOSFET wafer fabrication with the industries first . Decreased manufacturing cycle time and increased throughput. Gen 5 HEXFET ® Power MOSFET www.datasheetarchive.com/files/international-rectifier/docs/wcd0000d/wcd00d97.htm |
International Rectifier | 06/10/1998 | 7.28 Kb | HTM | wcd00d97.htm |
| IRF7521Dl 20V N-channel 135m W @4.5V 2.4A@25 o C 0.5V,1.5A IRF7523Dl 30V N-channel 135m W @l OV 2.4A@25 o C 0.5V,1.5A IRF7524Dl 20V P-channel 270m W @-4.5V -1.7A@25 o C 0.5V,1.5A IRF7526DI IRF7526DI IRF7526DI IRF7526DI 30V P-channel 270m W @-l INTERNATIONAL RECTIFIER INTRODUCES THE MICRO8 FETKY TM INTEGRATING A HEXFET ® POWER MOSFET AND SCHOTTKY combines a HEXFET ® power MOSFET and a Schottky diode in a single small outline package. Hot on the www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00195.htm |
International Rectifier | 06/10/1998 | 6.9 Kb | HTM | wcd00195.htm |
| -3 A output current 0.09ohms P-channel MOSFET and a 3A, 0.52V Schottky The Results efficient control 0.09ohms P-Channel MOSFET The Results? Easier-to-design common Introducing. FETKY tm SO-8 A HEXFET ® Power MOSFET and Schottky housed in a single space ® ; Power MOSFETs with up to 65% smaller die sizes plus ultra-low V F Schottkys with voltage drops as low this and this! -20V, 0.09 ohms 40V, 0.45V, 3A -20V, 0.09 ohms/0.52V, 3 www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00192.htm |
International Rectifier | 06/10/1998 | 9.88 Kb | HTM | wcd00192.htm |