First line: 2015M internally matched, common base transistor capable providing Watts output power across 1000-2000 band. This transistor specifically designed telecommunication microwave amplifier applications. utilizes gold metallization diffused ballasting provide high reliability supreme ruggedness. Maximum Abstract: .. .. .. 97J1-JD 97J1-JD .14 „V 2015M-2 ELECTRICAL CHARACTERISTICS1 SYMBOL CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output f= 2000 MHz Vcc- 28V 15.0 Watts Pin Power Input .. Tags: datasheet abstract..