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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

200v 1.5v 3a diode

Catalog Datasheet MFG & Type PDF Document Tags

31DF2 diode

Abstract: mosfet 600V 60A TO-220 . . - " " . FRD 31DF2 (3A 200V) SBD 31DQ04 (3A 40V) 2 . M . . 25 150 3A VF 0.78, 200V IR 4,800 . 31DF2 3A 200V , ,000 5,000 6,700 FRD (PN Diode) SBD 31DF2 150 VR 1V 10V 50V 100V 200V , FRED (Fast Recovery Epitaxial Diode) . 10kHz , . 200V SBD SBD FRD JBS , ( ) , N . . , . . 200V 200V . GHz
Nihon Inter Electronics
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31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet 2004/S AC100/ 50/60H DC12V EP10HY03 EP10QY03

30V 20A 10KHz power MOSFET

Abstract: IGBT 60A spice model / 200V DC-DC DC12V DC5V DC3.3V DC-DC 50/60Hz 10kHz ATX SBD FRD PNSBD MOSFET SBDPN SBD SBD PN - 31DF2(3A 200V)FRD31DQ04(3A 40VSBD 2515031DF2 , FRD()SBD ATX AC-DC FRDSBD AC-DC 50/60Hz10kHz 31DF2 3A 200V FRD 31DQ04 , Hz kHz MHz GHz 200V 200V MOSFET IGBT P N 200V P N 200V Mo 200V N 1 2004.4/2005.8
Nihon Inter Electronics
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30V 20A 10KHz power MOSFET IGBT 60A spice model 2MV10 200v 3A schottky sbd diode S smd 1a 100v diode bridge 2A100 100SBD EP10LA03 30VSOD-123 EP10LA03EP10HY03 200270/W

Diode 400V 5A

Abstract: lm1083 10V / 150mA 5A 15 12V / 2A 5A 20 12V / 2A V / 0mA V / 0mA 3A 20 200 4V / 750mA 3A 20 200 4V / 750mA 3A 20 100 4V / 750mA 3A 35 200 4V / 750mA 3A 35 100 4V / 750mA 3A 35 , 4V / 3A 25MHz 50W 40 250 4V / 500mA 3MHz 43.75W 40 250 4V / 500mA 3MHz 90W 40 250 4V , % 0.50% -2.2V -3V Negative -3A 25V Regulator +150°C -14.5V Voltage -55 to -12V 0.20% 0.50% -2.2V -3V Negative -3A to -30V Regulator +150°C -14.5V Voltage -55 to -12V 0.20% 0.50% -2.2V
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2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132

igbt 200V 4A

Abstract: SGW6N60UFD Voltage If=4.0A Tc =25°C - 1.4 1.7 V Tc =100°C - 1.3 - Trr Diode Reverse Recovery Time If=4.0A, Vr=200V , (sat) = 2.1 V (@ lc=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ , Current @ Tc = 100°C 3 A 'cm (1) Pulsed Collector Current 25 A If Diode Continuous Forward Current @ Tc = 100°C 4 A 'fm Diode Maximum Forward Current 25 A Pd Maximum Power Dissipation @Tc = 25°C 30 W , - 100 nA VCE(sat) Collector to Emitter saturation voltage lc=3A, VGE = 15V - 2.1 2.6 V lc
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OCR Scan
SGW6N60UFD igbt 200V 4A 200v 1.5v 3a diode

igbt 200V 4A

Abstract: SGP6N60UFD =25°C - 1.4 1.7 V Tc =100°C - 1.3 - Trr Diode Reverse Recovery Time If=4.0A, Vr=200V -di/dt , (sat) = 2.1 V (@ lc=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ , Current @ Tc = 100°C 3 A 'cm (1) Pulsed Collector Current 25 A If Diode Continuous Forward Current @ Tc = 100°C 4 A 'fm Diode Maximum Forward Current 25 A Pd Maximum Power Dissipation @Tc = 25°C 30 W , (sat) Collector to Emitter saturation voltage lc=3A, VGE = 15V - 2.1 2.6 V lc=6A, VGE = 15V - 2.6 -
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OCR Scan
SGP6N60UFD

igbt 200V 4A

Abstract: 200v 3A IGBT Diode Reverse Tj =2^C 35 52 nS Recovery Time Tj=12Ã5C 53 85 Irr Diode Peak Reverse If=4.0A, Vr=200V , ) = 2.2 V (at lc=3A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr=35nS (Typ) APPLICATIONS , =100 °C 3 'cm (1) Pulsed Collector Current 25 A If Diode Continuous Forward Current Tc =100 °c 4 A I fm Diode Maximum Forward Current 25 pd Maximum Power Dissipation Tc = 25 °C 30 W Tc =100 , leakage Current VGE = VGES â  VCE = 0V 100 nA VCE(sat) Collector to Emitter VGE = 15V, lc=3A 2.2 3.0
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OCR Scan
200v 3A IGBT

vex servo motor

Abstract: TE129 =4.0A , Tj=150°C 1.4 1.3 1.7 1.6 V Trr Diode Reverse Recovery Time If=4.0A, V. =200V di/dt=200A/uS Tj , ) = 2.2 V (at lc=3A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr=35nS (Typ) APPLICATIONS , = 100 °C 3 'cm (1) Pulsed Collector Current 25 A If Diode Continuous Forward Current Tc =100 °C 4 A I FM Diode Maximum Forward Current 25 Pd Maximum Power Dissipation Tc = 25 °C 30 W Tc , saturation voltage VGE = 15V, lc=3A VGE = 15V, lc=6A 2.2 2.7 3.0 V Cies Input capacitance VGE = 0V,f
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OCR Scan
vex servo motor TE129 bt 141 30-OTO T0-220 500MIN

200v 3A IGBT

Abstract: =25°C Tc =100°C IF=4.0A, VR=200V Tc =25°C -di/dt=200A/uS Tc =100°C Tc =25°C Tc =100°C Irr Diode , SGP6N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A , ) IF IFM PD Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100°C Diode Maximum , V/°C IC = 3mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=3A, VGE = 15V Ic=6A, VGE , Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300V , IC = 3A VGE = 15V RG = 80
Fairchild Semiconductor
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SGW6N60UFD

Abstract: Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ , IF Diode Continuous Forward Current @ Tc = 100°C 4 A IFM Diode Maximum Forward Current , 100 nA VCE(sat) Collector to Emitter Ic=3A, VGE = 15V - 2.1 2.6 V , Reverse transfer capacitance - 7 - pF td(on) Turn on delay time VCC = 300V , IC = 3A , nC Qgc Gate-Collector Charge Ic = 3A - 4 6 nC Le Internal Emitter
Fairchild Semiconductor
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diode 1000V 10a

Abstract: 200v 1.5v 3a diode m b = max. rated. ·cfDO*1* 7A 12A 13A 14A v CBO 400V 300V 400V 450V 240V 360V 180 V 200V v CEO 200V 100V 200V 225V 120V 150V 90V 100 V High Speed, High Voltage Darlingtons Package Outline , diode. High Speed, High Voltage Transistors Type No. BUX86 BUX87 BUX99 BUX84 BUX85 BUX84F BUX85F , at 1A/0.2A 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 2V at 3A/0.3A 1.5V at 4A/0.8A 1.5V at 4A/0.8A 0.4|j.s at 1A 0.4jis at 1A 80ns at 3A 80ns
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OCR Scan
4045AV diode 1000V 10a TO-220aB 11A DIODE 2A 400V diode 6A 1000v TO-220aB rr BU407 BUV28 BUV28A BUV27 BUV27A BUV26
Abstract: = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation , Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case , to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = 6A, VGE = 15V 3.5 -4.5 2.1 , 3A, RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A, RG = 80, VGE = 15V Fairchild Semiconductor
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SGP6N60UFDTU
Abstract: ) = 2.1 V @ IC = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Application AC , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter , ) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, VGE = 15V , nH VCC = 300 V, IC = 3A, RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A, RG Fairchild Semiconductor
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SGS6N60UFD SGS6N60UFDTU
Abstract: = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum , temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance , Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = 6A, VGE = 15V 3.5 -4.5 2.1 2.6 6.5 2.6 -V V V , ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 3A, RG = 80, VGE = 15V Fairchild Semiconductor
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SGW6N60UFDTM

Q67040-S4340

Abstract: SKA06N60 Anti-Parallel Diode Characteristic trr T j = 25° C, - tS V R = 200V, I F = 6A, - 17 - , tS V R = 200V, I F = 6A, - 27 - tF Diode reverse recovery time di F / dt = 200A , . Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125°C) di F / dt , (VR = 200V, Tj = 125°C) 600A/µs 10A 500A/µs 6A IF = 6A IF = 3A 4A 2A di r r , recovery current as a function of diode current slope (VR = 200V, Tj = 125°C) 150A/µs 250A/µs 350A/µs
Infineon Technologies
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SKA06N60 Q67040-S4340

CQ1265RT

Abstract: CQ0765RT Inductor 5D-9 BEAD101 BEAD201 Resistor R101 100k BEAD 5uH 3A 0.25 W Diode , R101 100k BEAD 5uH 3A 0.25 W Diode R102 150k 0.25 W D101 1N4937 1A , 220k 0.25 W, 1% D203 EGP30D 3A, 200V R206 5.1k 0.25 W D204 EGP20D 2A , 3A 0.25 W Diode R102 150k 0.25 W D101 1N4937 1A, 600V R103 5.1 0.25 , winding and Vcc winding, respectively, VFo and VFa are the diode forward voltage drops of the output
Fairchild Semiconductor
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CQ1465RT CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT

FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode 200V, I F = 6A, - 17 - tF Diode reverse recovery time di F / dt = 200A/ µ s - , trr T j = 150° C - 290 - tS V R = 200V, I F = 6A, - 27 - tF Diode , IF = 3A 200nC 0nC 50A/µs 150A/µs 250A/µs 350A/µs 450A/µs 550A/µs di F / dt , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = , of diode current slope (VR = 200V, Tj = 125°C) 600A/µs 10A 500A/µs 6A IF = 6A IF =
Infineon Technologies
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FAST RECOVERY DIODE 200ns 8A 40V 6A, 100v fast recovery diode 400v 3a low vf diode

SGS6N60UFD

Abstract: , IC = 3A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Application AC & DC Motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , , VGE = 0V VGE = VGES, VCE = 0V - - 250 ± 100 µA nA IC = 3mA, VCE = VGE IC = 3A
Fairchild Semiconductor
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SGW6N60UFD

Abstract: required. · · · · High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 3A High , Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = , Internal Emitter Inductance VCC = 300 V, IC = 3A, RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC
Fairchild Semiconductor
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200v 3A ultra fast recovery diode

Abstract: SGP6N60 , IC = 3A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGE = VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A, VGE = 15V
Fairchild Semiconductor
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200v 3A ultra fast recovery diode SGP6N60

SGP6N60UFD

Abstract: , IC = 3A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGE = VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A, VGE = 15V
Fairchild Semiconductor
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95MAX 54TYP
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