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20-Volt

Catalog Datasheet MFG & Type PDF Document Tags

1000 volt mosfet

Abstract: MOSFEt n channel for 800 volt 2 amp IRFR3711 switching frequency (410 KHz vs. 220 KHz). It should be noted that the 20-volt device , -volt synchronous FET with a 20-volt device which has a lower RDS(on). Replacing the 30V 72 5 10 15 20 , temperatures than the components currently used on flagship motherboard designs. New 20-volt MOSFETs
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Original
1000 volt mosfet MOSFEt n channel for 800 volt 2 amp design of mosfet based power supply 12vdc rectifier diode 20 amp 400 volt 2000 volt switching power supply design IRFR3704 HIP6601C

MOSFEt n channel for 800 volt 2 amp

Abstract: db850gb FET with a 20-volt device which has a lower R DS(on). Replacing the 30V control MOSFET with a 20V , should be noted that the 20-volt device efficiency still increased by 1.5% vs our 30volt devices while , used on flagship motherboard designs. New 20-volt MOSFETs based on our advanced novel process deliver
International Rectifier
Original
db850gb 12 volt dc to 220 volt ac converter circuit TRANSISTOR mosfet 30V 40A 216mJ IRFR3711s IRFR3707

Scans-0017298

Abstract: ST-12 «*l9/|6 MAX.* / â"¢ RCA- I 5 R-F AMPLIFIER PENTODE The li is a heater-cathode pentode of the 2.0'volt type for use in battery-operated receivers that require a separate cathode connection. CHARACTERISTICS Heater Voltage (D. C.). 2.0 Volts Heater Current . 0.22 Ampere Plate Voltage. 67.5 135 max. Volts Screen- Voltage (Grid No. 2). 67.5 67.5 max. Volts Grto Voltage (Grid No. 1). -1.5 -1.5 Volts Plate
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OCR Scan
ST-12 Scans-0017298 92C-4662

1n914 equivalent

Abstract: Y341 may be increased to any desired number of adding 331 gate expanders or 1N4148 diodes (or any 20-volt
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OCR Scan
TSC341 1N914 1n914 equivalent Y341 IT 341 N 341 AB ao410

truth table for 4 to 16 decoder

Abstract: mc14514 Key Features q q q q q q q q q q High-Voltage Types (20-Volt Rating) CD4514BMS
Intersil
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CD4514BDMSR 5962R9668101VJC CD4514BHSR 5962R9668101V9A CD4514BKMSR 5962R9668101VXC truth table for 4 to 16 decoder mc14514

TL292

Abstract: TL294 400 kilohertz for a 20-volt peak-to-peak output swing, because of the higher 20-megahertz unity-gain
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OCR Scan
TL292 TL294 TL294C OPERATIONAL AMPLIFIERS product preview OPERATIONAL AMPLIFIER TL291 TL291M TL292M TL294M

pic 817

Abstract: dual monostable multivibrator 1N914 diodes !or any 20-volt silicon d>odn) to the expander »npu:s. Dual Monostable Multivibrator 342
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OCR Scan
TSC342 pic 817 dual monostable multivibrator 342 multivibrator pic tachometer circuit rda dod

diode ir 4570

Abstract: common anode shd rectifier Reliability DESCRIPTION: A 20-VOLT, 15 AMP DUAL POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-4/4A/4B PACKAGE
Sensitron Semiconductor
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diode ir 4570 common anode shd rectifier SHD117117 S-100

TL294

Abstract: amplifiers have a typical full-power bandwidth of 40 0 kilohertz for a 20-volt peak-to-peak output swing
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OCR Scan
D2782 TL291C TL292C

DKV3803-55

Abstract: , a 20-volt hyperabrupt diode can provide the same tuning variation as a 90-volt abrupt-junction diode
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OCR Scan
DKV3803-55 DKV6550 CKV2010 DKV3801 DKV3802 DKV3803 DKV3804

6550A

Abstract: DKV6550A bandwidth lineartuning with low bias voltage. Forexam-ple a 20-volt hyperabrupt diode can provide the same
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OCR Scan
DKV6550A CKV2010-19 DKV6550B CKV2010-20 DKV6550C CKV2010-21 6550A CKV2010-22

DKV3803-59

Abstract: DKV6550-30 low bias voltage. For example, a 20-volt hyperabrupt diode can provide the same tuning variation as a
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OCR Scan
DKV6550-06 DKV6550-12 DKV6550-18 DKV6550-24 DKV6550-30 DKV3803-59 cp022 HYPERABRUPT 0SAS443
Abstract: Reliability DESCRIPTION: A 20-VOLT, 15 AMP DUAL POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-4/4A/4B PACKAGE Sensitron Semiconductor
Original
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4714, REV. - SHD125117 SHD125117P SHD125117N SHD125117D HERMETIC POWER SCHOTTKY RECTIFIER 150°C Maximum Operation Temperature DESCRIPTION: A 20-VOLT, 7.5/15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC TO -254 PACKAGE. ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE SYMBOL PIV O O MAX. 20 7.5 15 140 675 1.36 -65 to + 150 -65 to + 150 UNITS Volts Amps Amps Amps pF °C/W °C °C MAXIMUM Sensitron Semiconductor
Original
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4725, REV. - SHD125417 SHD125417P SHD125417N SHD125417D HERMETIC POWER SCHOTTKY RECTIFIER 150°C Maximum Operation Temperature DESCRIPTION: A 20-VOLT, 30/35 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC TO -254 PACKAGE. ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE SYMBOL PIV O O MAX. 20 30 35 150 2700 0.77 0.39 -65 to + 150 -65 to + 150 UNITS Volts Amps Amps Amps pF °C/W °C/W °C °C Sensitron Semiconductor
Original

PPC 755

Abstract: ppc 603e feature a low-power 2.0-volt design with three power-saving userprogrammable modes - doze, nap and sleep
Motorola
Original
MPC755 MPC745 MPC7400 PPC 755 ppc 603e Motorola PowerPC 755 MPC755FACT/D 750TM 740TM

MPSU 60 transistor

Abstract: MPSU10 emitter-follower with a 4.7 k emitter-resistor operated from a 20-Volt supply. It will, therefore, be operable
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OCR Scan
MPS-U10 MPSU 60 transistor MPSU10 MPSU10 equivalent MPSU 55 transistor mpsu 10

rotary solenoid

Abstract: filters. In the case of a 20-volt switch, the control lead filters must be rated to handle 3 amps
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OCR Scan
rotary solenoid 1N4004

MPC745

Abstract: MPC755 thermal management. Integer Unit The MPC755 and MPC745 microprocessors feature a lowpower 2.0-volt
Motorola
Original
MPC750 MPC740 MPC755/MPC745

M 74G 49

Abstract: PULLUP RESISTER 148 (or aiy 20-volt silicon diodes) to the expander nputs. â'¢11» H* cj i nSh T»»a 303 a» 'a
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OCR Scan
TSC301 M 74G 49 PULLUP RESISTER diodo 331 CCT-D 302C

NE3005B-20

Abstract: a1289 IRFR3711 switching frequency (410 KHz vs. 220 KHz). It should be noted that the 20-volt device , -volt synchronous FET with a 20-volt device which has a lower RDS(on). Replacing the 30V 72 5 10 15 20 , temperatures than the components currently used on flagship motherboard designs. New 20-volt MOSFETs
-
OCR Scan
NE3005B-20 NE3003B-20 NE3001B-20 NEM3008B-20 NEM3005B-20 NEM3003B-20 a1289 ne3005b ne3003 GG0E227 NE300557B-20 NE300357B-20

mur860 diode

Abstract: MR854 diode FET with a 20-volt device which has a lower R DS(on). Replacing the 30V control MOSFET with a 20V , should be noted that the 20-volt device efficiency still increased by 1.5% vs our 30volt devices while , used on flagship motherboard designs. New 20-volt MOSFETs based on our advanced novel process deliver
ON Semiconductor
Original
mur860 diode MR854 diode rectifier diode 20 amp 800 volt MUR1560 DATA rectifier diode 4 amp 600 volt 50 Amp current 512 volt diode 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007
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