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20-Volt

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Abstract: IRFR3711 switching frequency (410 KHz vs. 220 KHz). It should be noted that the 20-volt device , -volt synchronous FET with a 20-volt device which has a lower RDS(on). Replacing the 30V 72 5 10 15 20 , temperatures than the components currently used on flagship motherboard designs. New 20-volt MOSFETs -
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1000 volt mosfet MOSFEt n channel for 800 volt 2 amp 2000 volt switching power supply design rectifier diode 20 amp 400 volt IRLR8103V IRFR3707 HIP6601C
Abstract: FET with a 20-volt device which has a lower R DS(on). Replacing the 30V control MOSFET with a 20V , should be noted that the 20-volt device efficiency still increased by 1.5% vs our 30volt devices while , used on flagship motherboard designs. New 20-volt MOSFETs based on our advanced novel process deliver International Rectifier
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db850gb TRANSISTOR mosfet 30V 40A IRFR3704 dpak mosfet IRFR3711s 216mJ
Abstract: «*l9/|6 MAX.* / â"¢ RCA- I 5 R-F AMPLIFIER PENTODE The li is a heater-cathode pentode of the 2.0'volt type for use in battery-operated receivers that require a separate cathode connection. CHARACTERISTICS Heater Voltage (D. C.). 2.0 Volts Heater Current . 0.22 Ampere Plate Voltage. 67.5 135 max. Volts Screen- Voltage (Grid No. 2). 67.5 67.5 max. Volts Grto Voltage (Grid No. 1). -1.5 -1.5 Volts Plate -
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ST-12 Scans-0017298 92C-4662
Abstract: may be increased to any desired number of adding 331 gate expanders or 1N4148 diodes (or any 20-volt -
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TSC341 1N914 1n914 equivalent Y341 IT 341 N 341 AB diode 331
Abstract: Key Features q q q q q q q q q q High-Voltage Types (20-Volt Rating) CD4514BMS Intersil
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CD4514BDMSR 5962R9668101VJC CD4514BHSR 5962R9668101V9A CD4514BKMSR 5962R9668101VXC truth table for 4 to 16 decoder mc14514 CD4515BMS
Abstract: 400 kilohertz for a 20-volt peak-to-peak output swing, because of the higher 20-megahertz unity-gain -
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TL292 TL294 TL294C OPERATIONAL AMPLIFIERS product preview OPERATIONAL AMPLIFIER TL291 TL291M TL292M TL294M
Abstract: 1N914 diodes !or any 20-volt silicon d>odn) to the expander »npu:s. Dual Monostable Multivibrator 342 -
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TSC342 pic 817 dual monostable multivibrator 342 multivibrator rda dod pic tachometer circuit
Abstract: Reliability DESCRIPTION: A 20-VOLT, 15 AMP DUAL POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-4/4A/4B PACKAGE Sensitron Semiconductor
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diode ir 4570 common anode shd rectifier SHD117117 S-100
Abstract: amplifiers have a typical full-power bandwidth of 40 0 kilohertz for a 20-volt peak-to-peak output swing -
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D2782 TL291C TL292C
Abstract: , a 20-volt hyperabrupt diode can provide the same tuning variation as a 90-volt abrupt-junction diode -
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DKV3803-55 DKV6550 CKV2010 DKV3801 DKV3802 DKV3803 DKV3804
Abstract: bandwidth lineartuning with low bias voltage. Forexam-ple a 20-volt hyperabrupt diode can provide the same -
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DKV6550A CKV2010-19 DKV6550B CKV2010-20 DKV6550C CKV2010-21 6550A CKV2010-22
Abstract: low bias voltage. For example, a 20-volt hyperabrupt diode can provide the same tuning variation as a -
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DKV6550-06 DKV6550-12 DKV6550-18 DKV6550-24 DKV6550-30 DKV3803-59 cp022 0SAS443
Abstract: Reliability DESCRIPTION: A 20-VOLT, 15 AMP DUAL POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-4/4A/4B PACKAGE Sensitron Semiconductor
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Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4714, REV. - SHD125117 SHD125117P SHD125117N SHD125117D HERMETIC POWER SCHOTTKY RECTIFIER 150°C Maximum Operation Temperature DESCRIPTION: A 20-VOLT, 7.5/15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC TO -254 PACKAGE. ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE SYMBOL PIV O O MAX. 20 7.5 15 140 675 1.36 -65 to + 150 -65 to + 150 UNITS Volts Amps Amps Amps pF °C/W °C °C MAXIMUM Sensitron Semiconductor
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Abstract: feature a low-power 2.0-volt design with three power-saving userprogrammable modes - doze, nap and sleep Motorola
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MPC755 MPC745 MPC7400 PPC 755 Motorola PowerPC 755 ppc 603e MPC755FACT/D 750TM 740TM
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4725, REV. - SHD125417 SHD125417P SHD125417N SHD125417D HERMETIC POWER SCHOTTKY RECTIFIER 150°C Maximum Operation Temperature DESCRIPTION: A 20-VOLT, 30/35 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC TO -254 PACKAGE. ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE SYMBOL PIV O O MAX. 20 30 35 150 2700 0.77 0.39 -65 to + 150 -65 to + 150 UNITS Volts Amps Amps Amps pF °C/W °C/W °C °C Sensitron Semiconductor
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Abstract: emitter-follower with a 4.7 k emitter-resistor operated from a 20-Volt supply. It will, therefore, be operable -
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MPS-U10 MPSU 60 transistor MPSU10 MPSU10 equivalent MPSU 55 transistor mpsu 10
Abstract: filters. In the case of a 20-volt switch, the control lead filters must be rated to handle 3 amps -
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rotary solenoid 1N4004
Abstract: thermal management. Integer Unit The MPC755 and MPC745 microprocessors feature a lowpower 2.0-volt Motorola
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MPC750 MPC740 MPC755/MPC745
Abstract: 148 (or aiy 20-volt silicon diodes) to the expander nputs. â'¢11» H* cj i nSh T»»a 303 a» 'a -
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TSC301 M 74G 49 PULLUP RESISTER 302C 303C 304C
Abstract: IRFR3711 switching frequency (410 KHz vs. 220 KHz). It should be noted that the 20-volt device , -volt synchronous FET with a 20-volt device which has a lower RDS(on). Replacing the 30V 72 5 10 15 20 , temperatures than the components currently used on flagship motherboard designs. New 20-volt MOSFETs -
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NE3005B-20 NE3003B-20 NE3001B-20 NEM3008B-20 NEM3005B-20 NEM3003B-20 a1289 ne3003 ne3005b nec microwave NEM3001B-20 GG0E227 NE300557B-20 NE300357B-20
Abstract: FET with a 20-volt device which has a lower R DS(on). Replacing the 30V control MOSFET with a 20V , should be noted that the 20-volt device efficiency still increased by 1.5% vs our 30volt devices while , used on flagship motherboard designs. New 20-volt MOSFETs based on our advanced novel process deliver ON Semiconductor
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mur860 diode MR854 diode 50 Amp current 512 volt diode MUR1560 DATA rectifier diode 20 amp 800 volt rectifier diode 4 amp 600 volt 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007
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