NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: NLP25 NLP25 Series Single, dual and triple output LOW TO MEDIUM POWER AC/DC POWER SUPPLIES · · · · · 20-25W AC/DC Universal Input Switch Mode Power Supplies 1 4.00 x 2.07 x 0.91 inch package Overvoltage protection and short circuit protection 25W with free air convection cooling , triple output LOW TO MEDIUM POWER AC/DC POWER SUPPLIES 20-25W AC/DC Universal Input Switch Mode Power , NLP25 NLP25 Series Single, dual and triple output LOW TO MEDIUM POWER AC/DC POWER SUPPLIES 20-25W AC/DC ... | Original |
3 pages, |
power supply artesyn 5 output EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 EN61000-4-6 lr41062 NLP25 NLP25-7608 20-25W 48v power supply artesyn NLP25-7624 EN55022 NLP25 abstract |
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| Abstract: 0 ~ 14A 0 ~ 8.8A 0 ~ 7.8A 0 ~ 4.4A RATED POWER 200W 202.5W 204W 202.5W ... | Original |
2 pages, |
S-210-24 S-210 S-210 abstract |
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| Abstract: 0 ~ 14A 0 ~ 8.8A 0 ~ 7.8A 0 ~ 4.4A RATED POWER 200W 202.5W 204W 202.5W ... | Original |
2 pages, |
S-210 S-210 abstract |
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| Abstract: ~ 40A 200W S-210-7 S-210-7.5 7.5V 27A 0 ~ 27A 202.5W 100mVp-p 6 ~ 9V 2.0% 0.5% 1.0% S-210-12 S-210-12 12V 17A 0 ~ 17A 204W 120mVp-p 10 ~ 13.2V 1.0% 0.5% 0.5% S-210-13 S-210-13.5 13.5V 15A 0 ~ 15A 202.5W 120mVp-p 12 ~ 15V 1.0% 0.5% ... | Original |
2 pages, |
S-210 S-210 abstract |
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| Abstract: 2SC853 2SC853 2SC853 2SC853 NPN + SILICON EPITAXIAL TRANSISTOR Frequency Amplifier ft ©/FEATURES • Èg&feiï PNP J& 2SA545 2SA545 £ 3 y y y / y . 20-25W 7 7 x 7 y 7' ... | OCR Scan |
1 pages, |
2SC853 2SA545 2SC853 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SB1017 2SB1017 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 2SD1408 · APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V ... | Original |
4 pages, |
2SD1408 2sb1017 2SB1017 2SB1017 abstract |
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| Abstract: JMnic Product Specification 2SB596 2SB596 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD526 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... | Original |
4 pages, |
2SD526 2SD52 2SB596 2SB596 abstract |
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| Abstract: JMnic Product Specification 2SB1017 2SB1017 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1408 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter ... | Original |
4 pages, |
2SD1408 2SB1017 2SB1017 abstract |
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| Abstract: Inchange Semiconductor Product Specification 2SD526 2SD526 Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2SB596 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter TOR NDU ICO E SEM ANG INCH Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO PARAMETER ... | Original |
4 pages, |
2SD526 2SB596 2SD526 abstract |
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| Abstract: Inchange Semiconductor Product Specification 2SB596 2SB596 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD526 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base SYMBOL VCBO VCEO VEBO SEM GE PARAMETER HAN INC Collector-base voltage Collector-emitter ... | Original |
4 pages, |
ic audio amplifier 2*5w 2SD526 2sb596 2SB596 2SB596 abstract |
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| Abstract: A2025 KSK-1A54- KSK-1A54-. MEDER electronic mm [] ü 53.4mm5.4mm ü A ü RF ü 9kVDC ü 3A ü RF KSK-1A54- KSK-1A54-. Form A 20 * 25 W DCAC 500 V DCAC 1.5 A DCAC 5.0 A 0.5 V & 10 mA 150 m 1.5ms0.5V&50mA 200 m 100 > 60 100% 10kHz 1010 5 kVDC 3.0 ms 1.5 ms 2.5 pF KMS-05 KMS-05 AT 60 125 AT 50 g ... | Original |
1 pages, |
1A54 KSK-1A54- KSK-1A54- abstract |
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| Abstract: KSK-1A54- KSK-1A54-. MEDER electronic mm [] ü 53.4mm5.4mm ü A ü RF ü 9kVDC ü 3A ü RF KSK-1A54- KSK-1A54-. Form A 20 * 25 W DCAC 500 V DCAC 1.5 A DCAC 5.0 A 0.5 V & 10 mA 150 m 1.5ms0.5V&50mA 200 m 100 > 60 100% 10kHz 1010 5 kVDC 3.0 ms 1.5 ms 2.5 pF KMS-05 KMS-05 AT 60 125 AT 50 g ... | Original |
1 pages, |
1A54 KSK-1A54- KSK-1A54- abstract |
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| Abstract: GAE GREAT AMERICAN ELECTROINCS 2N5177 2N5177 Silicon NPN high power UHF transistor 2N5177 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment (class C). Output Power: 20 Watt(typ) Frequency Range: 100-500 Mhz Voltage: 28 V Package Type: FO-85 FO-85 Common Emitter Configuration Ballast Emitter Resistors Aluminum Metalization Electrical Characteristics (Tcase=40°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT p 'out fQ = 500 MhzA/cc=28V/P,N=10W 17 20 25 W GD ... | OCR Scan |
1 pages, |
2N5177 FO-85 2N5177 abstract |
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| Abstract: 2SA817 2SA817 PNP (PCT) 2SA817 2SA817 : mm · 2SC1627 2SC1627 · 20~25 W (Ta = 25°C) VCBO -80 V VCEO -80 V VEBO -5 V IC -300 mA IB -60 mA PC 600 mW Tj 150 °C Tstg -55~150 °C : JEDEC TO-92 JEITA SC-43 SC-43 (//) 2-5F1B (/ ) : 0.21 g () ... | Original |
3 pages, |
2SC1627 2SA817 2SA817 abstract |
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| Abstract: Memory Module Specification KVR800D2E5/512 KVR800D2E5/512 512MB 512MB 64M x 72-Bit DDR2-800 DDR2-800 CL5 ECC 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 64M x 72-bit (512MB 512MB) DDR2-800 DDR2-800 CL5 SDRAM (Synchronous DRAM) ECC memory module. The components on this module include nine 64M x 8-bit (16M x 8-bit x 4 Bank) DDR2-800 DDR2-800 SDRAM in FBGA packages. This 240pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications are as follows: FEATURES: Clock Cycle Time (tCK) CL=5 ... | Original |
1 pages, |
KVR800D2E5 DDR2-800 KVR800D2E5/512 512MB KVR800D2E5/512 abstract |
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| Abstract: GAE GREAT AMERICAN ELECTROINCS 2N5177 2N5177 Silicon NPN high power UHF transistor 2N5177 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment (class C). Output Power: 20 Watt(typ) Frequency Range: 100-500 Mhz Voltage: 28 V Package Type: FO-85 FO-85 Common Emitter Configuration Ballast Emitter Resistors Aluminum Metalization Electrical Characteristics (Tcase=40°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT p 'out fQ = 500 MhzA/cc=28V/P,N=10W 17 ... | OCR Scan |
1 pages, |
TI 511 transistor N10W 2N5177 FO-85 2N5177 abstract |
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| Abstract: SGI Silicon Group Inc. 2N5177 2N5177 " t * -» ( *- - -s " " v- SM" n -f j t m ISÊéÊSmSê L. , 7 Silicon NPN high power UHF transistor 2N5177 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment (class C). ^Output power: Frequency range: Voltage: Package type: 20 watt (typ) 100 - 500 MHz 28 volt F085 Common Emitter Configuration Ballast Emitter Resistors Aluminum Metalization ELECTRICAL CHARACTERISTICS (TCASE = 40o C) SYMBOL TEST CONDITIONS VALU ... | OCR Scan |
1 pages, |
2N5177 2N5177 abstract |
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| Abstract: Memory Module Specification KVR800D2E5K2/1G KVR800D2E5K2/1G 1GB (512MB 512MB 64M x 72-Bit x 2 pcs.) DDR2-800 DDR2-800 CL5 ECC 240-Pin DIMM Kit DESCRIPTION: ValueRAM's KVR800D2E5K2/1G KVR800D2E5K2/1G is a kit of two 64M x 72-bit (512MB 512MB) DDR2-800 DDR2-800 CL5 SDRAM (Synchronous DRAM) ECC memory modules. Total kit capacity is 1GB (1024MB 1024MB). The components on each module include nine 64M x 8-bit (16M x 8-bit x 4 Bank) DDR2-800 DDR2-800 SDRAM in FBGA packages. Each 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical spe ... | Original |
1 pages, |
DDR2-800 KVR800D2E5K2/1G 512MB 1024MB KVR800D2E5K2/1G abstract |
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| Abstract: Memory Module Specification KVR333X72C25/256 KVR333X72C25/256 256MB 256MB 32M x 72-Bit DDR333 DDR333 CL2.5 ECC 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 32M x 72-bit (256MB 256MB) DDR333 DDR333 CL2.5 SDRAM (Synchronous DRAM) ECC memory module. The components on this module include nine 32M x 8-bit (8M x 8-bit x 4 Bank ) DDR333 DDR333 SDRAM in TSOP packages. This 184pin DIMM uses gold contact fingers and requires +2.5V. The electrical and mechanical specifications are as follows: FEATURES: Clock Cycle Time (tCK) Row ... | Original |
1 pages, |
DDR333 KVR333X72C25/256 256MB KVR333X72C25/256 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| No abstract text available www.datasheetarchive.com/download/83509248-585026ZC/solder 25w.jpg |
NEDIS | 21/01/2000 | 9.37 Kb | JPG | solder 25w.jpg |
| ST | A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING Application Note A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING AN668 AN668 AN668 AN668 Document Format Size Document Number Date Update Pages Portable Document Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1732-v3.htm |
STMicroelectronics | 25/05/2000 | 38.78 Kb | HTM | 1732-v3.htm |
| ST | A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING AN668 AN668 AN668 AN668 A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING Document Number: 1732 Date Update: 27/7/95 Pages: 16 The document is available in the following formats: Portable Document Format and Raw Text Format APPLICATION NOTE A New High Power IC Surface Mou www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1732-v2.htm |
STMicroelectronics | 14/06/1999 | 36.87 Kb | HTM | 1732-v2.htm |
| ST | A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING Application Note A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING AN668 AN668 AN668 AN668 Document Format Size Document Number Date Update Pages Portable Document Format 1732 27/07/1995 16 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1732.htm |
STMicroelectronics | 20/10/2000 | 40.14 Kb | HTM | 1732.htm |
| ST | A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING AN668 AN668 AN668 AN668 A NEW HIGH POWER IC SURFACE MOUNT PACKAGE; POWER SO-20 SO-20 SO-20 SO-20 POWER IC PACKAGING FROM INSERTION TO SURFACE MOUNTING Document Number: 1732 Date Update: 27/7/95 Pages: 16 The document is available in the following formats: Portable Document Format and Raw Text Format APPLICATION NOTE A New High Power IC Surface Mou www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1732-v1.htm |
STMicroelectronics | 02/04/1999 | 36.9 Kb | HTM | 1732-v1.htm |