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1 - 50 of about 10000+ for 2.5-V Devices |
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First line: APEX Contents March Application Notes Metastability Altera Devices Evaluating Power Altera Devices Abstract: .. AN 106 Designing with 2.5-V Devices. AN 107 Using Altera Devices in Multiple Voltage Systems. AN 110 Gate Counting Methodology for APEX 20K Devices. AN 112 Integrating Product-Term Logic in APEX .. datasheet abstract.. |
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First line: AMS-173-16 Product Selection Guide DEVICES PORTABLE BATTERY-OPERATED APPLICATIONS Operating Voltage Function Schottky Abstract: .. DEVICES FOR PORTABLE, BATTERY-OPERATED APPLICATIONS. Operating Sleep Part. Voltage Function .. 2.5 V Min VDD Micropower 400 μW Hall-Effect Switch – 3209. Micropower 25 μW Hall-Effect .. datasheet abstract.. |
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First line: Designing with 2.5-V Devices July ver. Application Note Introduction improve performance reduce Abstract: .. Designing with 2.5-V Devices. July 1999, ver. 1.01 Application Note 106. A-AN-106-01.01. Introduction. To improve performance and reduce costs, Altera has introduced devices fabricated on an .. datasheet abstract.. |
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First line: 7000B Devices Industrys Only Product-Term Device Support 1.8-V Interfaces Technical Brief ver. Abstract: .. Each I/O bank in a MAX 7000B device has a separate VCCIO pin than can be set to 1.8 V, 2.5 V, or 3.3 V See Figure 1 . Figure 1. Two Independent I/O Banks Powered by Separate VCCIO Pins. When the VCCIO pin .. datasheet abstract.. |
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First line: Using Altera Devices Multiple-Voltage Systems Application Note August ver. Introduction Although 5.0-V Abstract: .. circuit boards PCBs are assembled with a mixture of 5.0-V, 3.3-V, 2.5-V, and 1.8-V devices. To accommodate this mixture seamlessly, it is essential that these devices interface with systems .. datasheet abstract.. |
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First line: Using Altera Devices Multiple-Voltage Systems Application Note June ver. Introduction Although 5.0-V Abstract: .. circuit boards PCBs are assembled with a mixture of 5.0-V, 3.3-V, 2.5-V, and 1.8-V devices. To accommodate this mixture seamlessly, it is essential that these devices interface with systems .. datasheet abstract.. |
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First line: AMS-173-16 Product Selection Guide DEVICES PORTABLE BATTERY-OPERATED APPLICATIONS Operating Voltage Function Schottky Abstract: .. DEVICES FOR PORTABLE, BATTERY-OPERATED APPLICATIONS. Operating Sleep Part. Voltage Function .. 2.5 V Min VDD Micropower Hall-Effect Switch – 3210. Min VO Low-Dropout Regulators X 8188-xx. 2.7 V .. datasheet abstract.. |
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First line: FLEX Contents March Application Briefs Prescaled Counters FLEX Devices Parity Generators FLEX Abstract: .. FLEX 10K Devices with Leonardo Spectrum Software. AN 106 Designing with 2.5-V Devices. AN 107 Using Altera Devices in Multiple Voltage Systems. AN 116 Configuring APEX 20K, FLEX 10K & FLEX 6000 Devices .. datasheet abstract.. |
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First line: Application Report SCEA035A June Selecting Right Level-Translation Solution Prasad Dhond ABSTRACT Supply Abstract: .. these devices, the output of each driver must be compliant with the input of the receiver that it .. 2.5 V. 2.0 V 1.7 V. 0.7 V. 0.4 V. 0 V. VOH VIH. VIL VOL GND. 1.8 V. VCC 0.45 V 0.65VCC. 0.35VCC 0.45 V. 0 V. VOH VIH. VIL .. datasheet abstract.. |
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First line: Application Note AC246 Level Shifter Design Example Contents General Description Design Description Abstract: .. , higher voltage devices, requiring solutions that interface with the multiple voltages that .. /O voltage of 3.3 V or 1.5 V. Bank2 can use an I/O voltage of 2.5 V or 1.5 V.. Top-Level Block Diagram .. datasheet abstract.. |
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First line: Migration From Power Supplies Logic Devices Application Report Logic Products Printed U.S.A. Abstract: .. Migration From 3.3-V to 2.5-V Power Supplies for Logic Devices. SCEA005 December 1997. IMPORTANT NOTICE. Texas Instruments TI reserves the right to make changes to its products or to discontinue .. datasheet abstract.. |
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First line: Technology P.O. Norwood 02062-9106 Tel 781 / 329-4700 Fax 781 / 326-8703 www.analog.com AN-767 APPLICATION NOTE Abstract: .. USING THE GYRO’S REFERENCE OUTPUT All Analog Devices gyros have a 2.5 V reference output that can be used to reduce conversion errors. The general idea is that by performing an A/D conversion on .. datasheet abstract.. |
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First line: Page SN65LVDS16 Evaluation Module SN65LVDS16EVM Status ACTIVE Texas Instruments Description Features Whats Abstract: .. This device operates at clock rates up to 2.0 GHz at either 3.3 V or 2.5 V supply operation, with less than 23 ps of total jitter. The device output can be disabled to the high impedance state by applying .. datasheet abstract.. |
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First line: TG2210FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT SPDT Switch Switch Abstract: .. • Low voltage operation: VC = 0 V/2.5 V • Small package: TU6 package 2.0 × 1.25 × 0.6 mm Pin .. When using this device, please ensure that all tools and equipment are earthed. Weight: 0.008 .. datasheet abstract.. |
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First line: TG2210FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT SPDT Switch Switch Abstract: .. Low voltage operation: VC = 0 V/2.5 V Small package: TU6 package 2.0 × 1.25 × 0.6 mm Pin .. When using this device, please ensure that all tools and equipment are earthed. Weight: 0.008 .. datasheet abstract.. |
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First line: Configuring Mercury APEX ACEX FLEX Devices CF51006-2.1 Introduction Mercury APEX ACEX FLEX Abstract: .. 8. Configuring Mercury, APEX 20K 2.5 V , ACEX 1K & FLEX 10K Devices. Introduction MercuryTM, APEXTM 20K 2.5 V , ACEX® 1K, and FLEX® 10K devices can be configured using one of four configuration .. datasheet abstract.. |
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First line: LM285 / 285B-1.2V LM285 / 285B-2.5V LM385 / 385B-1.2V LM385 / 385B-2.5V POWER BAND-GAP VOLTAGE REFERENCES Microelectronics Page Rev. 22-017-700 Abstract: .. LM285/285B-2.5V LM385/385B-2.5 V. LOW POWER, BAND-GAP VOLTAGE REFERENCE S. LIFE SUPPORT USAGE .. components in life support devices or systems without the express written approval of the CEO .. datasheet abstract.. |
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First line: NTE3080 Series Display Seven Segment Common Anode Right Hand Decimal Point Features Abstract: .. All Other Devices .. NTE3080−Y − 2.1 2.5 V. NTE3080−G − 2.2 2.5 V. Reverse Current IR VR = 5V − − 10 uA. Pin Connection .. datasheet abstract.. |
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First line: 18-Bit ADCs From Leader High Performance Analog 18-Bit ADCs with Sample Rates Abstract: .. reference, while the AD7495 provides its own internal 2.5 V reference. For parallel interface .. in bipolar applications while AD789x family devices operate from a single 5 V power supply. The .. datasheet abstract.. |
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First line: Chapter Reference Ordering Information MII51006-1.0 Software MAX devices supported Altera Quartus design Abstract: .. Indicates device core voltage 1.8-V VCCINT device 2.5-V or 3.3-V VCCINT device. .. datasheet abstract.. |
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First line: Preliminary Datasheet GaAs INTEGRATED CIRCUIT µPG175TA L-Band DRIVER AMPLIFIER DESCRIPTION µPG175TA Abstract: .. The device can operate with 3.0 V, having the. high gain and low distortion. FEATURES • Low .. = +9 dBm, VAGC = 2.5 V. External input and output matching. • Variable gain control function: ΔG = 35 .. datasheet abstract.. |
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First line: Power-Loss Voltage Regulator Issued Jan. Sales Marketing Group -Electronic Components Devices Model Abstract: .. 1: 3.3 V/2.5 V, 250 mA. Output 2:1.3 - 3.3 V Increments of 0.1 V , 250 mA ● Ceramic capacitors can be .. occur i n equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in .. datasheet abstract.. |
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First line: Analog Devices Data Converters High Density DACs 8-Bit 10-Bit 12-Bit 13-Bit 14-Bit Abstract: .. AD5318 10 8/Ser Vout 0 to VDD 1.8 MHz 2.5 V-5.5 V, 16 -Lead TSSOP, 0.8 mA. AD5328 12 8/Ser Vout 0 to .. Page 1 of 1 Analog Devices: Data Converters: High Density DACs, 8-Bit, 10-Bit, 12-Bit, 13-Bit .. datasheet abstract.. |
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First line: TG2206F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2206F SPDT Swith Switch Abstract: .. z Low voltage operation: VC = 0 V/2.5 V z Small package: SM6 package 2.9 × 1.6 × 1.1 mm Pin .. the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices .. datasheet abstract.. |
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First line: Chapter Introduction MII51001-1.0 Introduction MAX family instant-on non-volatile CPLDs based 0.18-µm 6-layer-metal-flash Abstract: .. enabling external supply voltages to the device of either 3.3 V/2.5 V or 1.8 V. ■ MultiVolt I/O interface supporting 3.3-V, 2.5-V, 1.8-V, and 1.5-V logic levels ■ Bus-friendly architecture including .. datasheet abstract.. |
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First line: GaAs SP4T High Power Switch Features Voltage Operation Harmonics Insertion Loss High Abstract: .. devices. Parameter Absolute Maximum. Input Power. 0.5 - 3.0 GHz, 2.5 V Control +38 dBm. Voltage .. 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6 .. datasheet abstract.. |
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First line: RoHS Compliant GaAs SP4T High Power Switch Features Voltage Operation Harmonics Insertion Abstract: .. devices. Parameter Absolute Maximum. Input Power. 0.5 - 3.0 GHz, 2.5 V Control +38 dBm. Voltage .. 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6 .. datasheet abstract.. |
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First line: October Edition DATA SHEET Series PIEZOELECTRIC DEVICE VOLTAGE CONTROLLED OSCILLATOR DESCRIPTION series Abstract: .. Note: Permanent device damage may occur if absolute maximum ratings are exceeded. Functional .. Oscillation Frequency Deviation Af0 VIN2 = 2.5 V -500 — +500 ppm f0 reference. Variable Width of .. datasheet abstract.. |
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First line: Chapter Introduction MII51001-1.1 Introduction MAX family instant-on non-volatile CPLDs based 0.18-µm 6-layer-metal-flash Abstract: .. enabling external supply voltages to the device of either 3.3 V/2.5 V or 1.8 V. ■ MultiVolt I/O interface supporting 3.3-V, 2.5-V, 1.8-V, and 1.5-V logic levels ■ Bus-friendly architecture including .. datasheet abstract.. |
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First line: Chapter Using Devices Multi-Voltage Systems MII51009-1.5 Introduction Technological advancements deep submicron processes Abstract: .. MultiVolt core feature, MAX II devices are able to operate with a 3.3-V or 2.5-V power supply for MAX II devices and a 1.8-V power supply for MAX IIG devices MAX II devices have an internal voltage .. datasheet abstract.. |
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First line: NTE30065 thru NTE30071 Super Bright Indicators 10mm Features RoHS Compliant Plastic Mold Abstract: .. Forward Voltage NTE30065 VF IF = 20mA − 2.2 2.5 V. NTE30066, NTE30070 − 3.5 4.0 V. NTE30067 .. Reverse Current All Devices IR VR = 5V − − 10 μA. NTE30066, NTE30070, NTE30071 VR = 4V − − 60 μA .. datasheet abstract.. |
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First line: NTE974 Integrated Circuit PhaseFrequency Detector Description NTE974 consists digital phase detectors charge Abstract: .. The outputs of the device must be tested by sequencing through the indicated input states .. Ouput Voltage VOH 6, 12 IOH1 = –1.6mA, VILT = 1.1V, VCCL = 4.75V 2.5 – – V. VOL 6 IOL = 20mA, VIHT = 1.8V .. datasheet abstract.. |
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First line: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21709-1E ASSP Piezoelectric MHz Series F100 DESCRIPTION series Abstract: .. Exposure to absolute maximum rating conditions for extended periods may affect device .. = 2.5 V — 0 +0.5 V. Duty ratio DUTY V. IN. = 2.5 V 40 50 60 % * Initial deviation of oscillation frequency. Δ .. datasheet abstract.. |
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First line: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21709-1E ASSP Piezoelectric MHz Series F100 DESCRIPTION series Abstract: .. conditions for extended periods may affect device reliability. ■ RECOMMENDED OPERATING .. Duty ratio DUTY VIN = 2.5 V 40 50 60 % * Initial deviation of oscillation frequency ΔfO VIN = 2.5 V .. datasheet abstract.. |
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First line: Lineup Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-21709-1E ASSP Piezoelectric MHz Series F100 Abstract: .. Exposure to absolute maximum rating conditions for extended periods may affect device .. 2.5 V DC. Vcc. C L = 22 pF±3 pF. OUTPUT. CL includes capacitor of probe and test fixture To Top / Lineup .. datasheet abstract.. |
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First line: Freescale Semiconductor Technical Data DATA SHEET MPC9109 Rev. Voltage Clock Distribution Voltage Abstract: .. clock distribution chip with 2.5 V or 3.3 V LVCMOS output capabilities. The device features the capability to select either a differential LVPECL or an LVCMOS compatible input. The 18 outputs .. datasheet abstract.. |
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First line: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Abstract: .. IS DC supply current VS = 2.5 V; RF input AC coupled 10 - mA. MSG maximum stable gain VS = 2.5 V; f = 2 GHz .. cause permanent damage to the device. These are stress ratings only and operation of the device .. datasheet abstract.. |
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First line: Section Design Considerations This section provides documentation design considerations when utilizing Cyclone Abstract: .. using Cyclone devices in applications with DDR SDRAM and FCRAM memory devices, see “DDR Memory .. conforming to one of several voltage level I/O standards, such as 3.3-V, 2.5-V, 1.8-V and 1.5-V .. datasheet abstract.. |
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First line: Preliminary Datasheet L-BAND DRIVER AMPLIFIER UPG2106TB FEATURES VOLTAGE OPERATION VDD1 VDD2 Abstract: .. GP Power Gain PIN = -18 dBm, VAGC = 2.5 V dB 26 30. G Variable Gain Range PIN = -18 dBm, VAGC = 0.5 to 2.5 V .. • CELLULAR HANDSETS AND OTHER PORTABLE DEVICES. TEST CIRCUIT1. PIN CONNECTIONS AND INTERNAL .. datasheet abstract.. |
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First line: PRELIMINARY SFT4959 SOLID STATE DEVICES INC. Stage Road Santa Springs Phone 404-4474 Abstract: .. Total Device Dissipation @ TC=100oC Derate above 100oC PD. • PNP Silicon Annular Transistor .. 2 5 V -. 3 BVEBO V -. Emitter-Base Breakdown Voltage IE =0.1mAdc - ICBO uA 0 . 1. Collector Cutoff .. datasheet abstract.. |
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First line: Benefits Issues Migration 3.3-V Logic Lower-Voltage Supplies SDAA011A September IMPORTANT NOTICE Texas Abstract: .. Specific testing of all parameters of each device is not necessarily performed, except those .. 2.5-V to 3.3-V/5 .. datasheet abstract.. |
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First line: Benefits Issues Migration 3.3-V Logic Lower-Voltage Supplies SDAA011A September IMPORTANT NOTICE Texas Abstract: .. Specific testing of all parameters of each device is not necessarily performed, except those .. 2.5-V to 3.3-V/5 .. datasheet abstract.. |
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First line: FSRAM Standard Synchronous Part Numbering Motorola Component Memory Alpha product Unqualified standard Abstract: .. Die Revision Blank =First qualified device A =First die size change or spec change B =Second die .. Technology 62 = 5 V CMOS 63 = 3.3 V CMOS 64 = 2.5 V CMOS 65 = 1.8 V CMOS 66 = 1.5 V CMOS. 67 = 5 V BiCMOS 69 = 3.3 .. datasheet abstract.. |
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First line: NCS2001 Sub-One Volt Rail-to-Rail Operational Amplifier NCS2001 industry first subone volt operational Abstract: .. mV Trimmed Input Offset ∞ 10 pA Input Bias Current ∞ 1.4 MHz Unity Gain Bandwidth at 2.5 V, 1.1 MHz .. This device contains 63 active transistors. -+ 0.8 V to 7.0 V. Rail to Rail Input Rail to Rail .. datasheet abstract.. |
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First line: Million-Cell Square Inch LITTLE FOOT TrenchFETs Generation TrenchFETs complete families announced Break Abstract: .. • Operating gate-source voltage range of 2.5 V to 9.6 V • On-resistance specified at 2.5 V and 4.5 .. -channel TrenchFETs with on-resistance specified at 10 V and 4.5 V Single N-Channel Devices .. datasheet abstract.. |
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First line: Preliminary Datasheet L-BAND DRIVER AMPLIFIER UPG2110TB FEATURES VOLTAGE OPERATION VDD1 VDD2 Abstract: .. IAGC AGC Control Current VAGC = 0.5 to 2.5 V ∝A 200 500. GP Power Gain PIN = -18 dBm, VAGC = 2.5 V dB 17.5 .. The device can operate with 3.0 V, having high gain and low distortion. DESCRIPTION. FEATURES. L .. datasheet abstract.. |
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First line: Preliminary Datasheet µPG2106TB µPG2110TB L-BAND DRIVER AMPLIFIER GaAs INTEGRATED CIRCUIT DESCRIPTION Abstract: .. Not all devices/types available in every country. Please check with local NEC .. = +8 dBm, VAGC = 2.5 V External input and output matching • Variable gain control function : ΔG = 40 .. datasheet abstract.. |
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First line: Commercial Diodes Commercial Diodes MSV-1200 Series Hyperabrupt Varactors Single Common Cathode Oscillator Abstract: .. These devices are avail-able in single junction, common anode and common cathode .. Ct @ 1 V pF Ct @ 4 V pF Ct @ 2.5 V pF Q @ 4 V, 50 MHz. Part Number1. MSV1204-22-001 MSV1204-23-001 .. datasheet abstract.. |
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First line: Freescale Semiconductor Technical Data MPC9109 Rev. Voltage Clock Distribution Chip MPC9109 voltage Abstract: .. clock distribution chip with 2.5 V or 3.3 V LVCMOS output capabilities. The device features the capability to select either a differential LVPECL or an LVCMOS compatible input. The 18 outputs .. datasheet abstract.. |
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First line: HE7601SG GaAlAs Infrared Emitting Diode Description HE7601SG band GaAlAs infrared emitting diode Abstract: .. light source for optical control devices and sensors. Features. • High efficiency and high .. Forward voltage VF — — 2.5 V I F = 200 mA. Reverse current I R — — 100 μA VR = 3 V. Capacitance Ct — 30 — pF VR .. datasheet abstract.. |
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