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Part : HLT-0218GH Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $8.29 Price Each : $10.69
Part : HLT-1218-G-H Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $50.29 Price Each : $64.59
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2-18GH

Catalog Datasheet MFG & Type PDF Document Tags

MGF0915A

Abstract: a4013 VCS( LL ) - VDD ) 21.8GHz ROSC (valid for fpwm > 23kHz) Time R VCC =
Mitsubishi
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MGF0915A a4013 60Ghz

HV9901

Abstract: 1N4148 CHA3218-99F RoHS COMPLIANT 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC , Vd1 IN Vd2 OUT Main Features Broadband performances: 2-18GHz Noise figure : 2dB Output , CHA3218-99F 2-18GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25° Vd = +4V C , -99F 2-18GHz Low Noise Amplifier Absolute Maximum Ratings (1) Tamb.= +25° C Symbol Parameter Values , subject to change without notice CHA3218-99F 2-18GHz Low Noise Amplifier Typical on-wafer Sij
Supertex
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HV9901 1N4148 1N4937 VN2460N8 HV9901NG HV9901P

CHA3218-99F

Abstract: CMM1110-BD RNP@s·@QXNP@gh¡@mmic@l·z@n·OETM^@a"­'OEOE^~ mOE"OEY@b~·,.,"L@i"N@QPWYU@r·`'^ @rNL@h·>TMs·"L@t^Y,TM@WWPYY ·" ÐRPPU@mOE"OEY@b~·,.,"L@i"N CELERITEK INC. ADVANCED PRODUCT SPECIFICATIONS PRODUCT DESCRIPTION: 2-18GHz MMIC Low Noise Amp. PRODUCT APPLICATION: PROJECT ENGINEER: Amer Droubi MASK NUMBER: M413-17 PART NUMBER: CMM1110-BD BM NUMBER: TBD REVISION: 02 DATE: 4/6/05 Main Features Unique 2 stage Feedback LNA Fully
United Monolithic Semiconductors
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2-18GH DSCHA32181157 SCHA32181157 AN0020 CHA3218-99F/00
Abstract: tPULL - IN = -( RHDa V - VDD RHDb )CHD ln1 - CS ( HL ) VCS ( LL ) - VDD 21.8GHz (valid for Mimix Broadband
Original

Fb0331

Abstract: frequency of 2-18GHz and bias current of ± 20mA per diode. ADVANCED: Data Sheets contain information
Supertex
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Fb0331
Abstract: characterize the reflectivity reduction of a microwave absorber over the 218GHz range. Timesavers Machine M/A-COM
Original
MA4SW110 MA4SW210 MA4SW310

x band radar transmitters

Abstract: rfss HD ln1 - VCS ( LL ) - VDD ( f PWM 3.23kHz + ) 21.8GHz ROSC (valid for f pwm
Laird Technologies
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x band radar transmitters rfss INSERTS FOR COMPOSITE OR HONEYCOMB RFML 5301 6007 Graphite film material 218GH

HV9901

Abstract: ac Solenoid Driver FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) · High Associated Gain: 13.0dB (Typ.)@f=12GHz · Lg 0.15µm, Wg = 200µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Packaging Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are packaged
Supertex
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ac Solenoid Driver ENI 21 diode 1N 4937 MS-012 DSPD-16SONG F101708 DSFP-HV9901 B103008

0951P

Abstract: MGF0951P Conditions Output Sensitivity (mV/mW) 900 450 f = 2-18GHz P in = -20dBm Maximum Tangential , 1 MHz f = 2-18GHz P in â  -20dBm = f = 2-18GHz P in = -20dBm f = 10GHz -5 5 °C to +100°C P|N = -20dBm Rl = 4 3 0 n f = 2-18GHz P|N = -20dBm f = 2-18GHz P in = -20dBm f = 1KHz f =
Mitsubishi
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MGF0951P 0951P mitsubishi mgf

60Ghz

Abstract: MGF0952P the 2-18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically
Mitsubishi
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MGF0952P idq042a 211G

Eudyna Packaging

Abstract: FHX45X - GaAs FET & HEMT Chips FEATURES â'¢ Low Noise Figure: 0.55dB (Typ.)@f=12GHz â'¢ High Associated Gain: 12.0dB (Typ.)@f=12GHz â'¢ Lg s 0.15|iim, Wg = 280|iim â'¢ Gold Gate Metallization for High Reliability DESCRIPTION The FHX45X is a Super High Electron Mobility Transistor (SuperHEMTâ"¢) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well
Eudyna Devices
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Eudyna Packaging
Abstract: frequency, change R6 according to the following equation: f PWM = 3.23kHz + 21.8GHz R6 This -
OCR Scan
DS3415-1 DC3000 DC3031/DC3032 DC3041/DC3042 DC3033/DC3034 DC3043/DC3044

FHX13LP

Abstract: FHX14LP FHX35LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 1.2B (Typ.)@f=12GHz â'¢ High Associated Gain: 10.0dB (Typ.)@f=12GHz â'¢ Lg ≤ 0.25µm, Wg = 280µm â'¢ Gold Gate Metallization for High Reliability â'¢ Cost Effective Ceramic Microstrip (SMT) Package â'¢ Tape and Reel Packaging Available DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective
-
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FHX13LP FHX14LP transistor fhx 35 lp fujitsu hemt 2-18G low noise hemt FHX13LG/LP 14LG/LP FCSI0598M200
Abstract: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise -
OCR Scan

NAIS Relay 5v

Abstract: 5V SPDT relay FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Gate Drain Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu's stringent
Supertex
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HV9901DB1 NAIS Relay 5v 5V SPDT relay nais relay relay 10A 5V s1J C4 Relay 5V, 10A, 125VAC 277VAC 10400VDC 24277VAC
Abstract: ACLR(dBc) f1=2.17GHz f2=2.18GHz -35 35 VD=10V(-5MHz) VD=10V(+5MHz) VD=10V(-10MHz) VD Eudyna Devices
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hemt low noise die

Abstract: Attenuators SMA Lossy Line Type 2 - 18GHz Performance Specifications: Frequency Range: 2-18GHz 3-18GH z 5-18GH z 6-18GH z Attenuation Values: i-4 d B 5-9dB 10 -iSdB i 6-20 dB Max Deviation from Nominal: + 0.5 dB or 5% whichever is greater Impedance: so Ohms VSWR: 1.25 max Power: 2 Watts average @ +25 °C derated linearly to 0.5 Watts @ +125 °C Peak Power: 5 Kilowatts Operating , 18 GHz 7mm Precision 2 - 18GHz Performance Frequency Range: 2-18GHz 3-18GH z 5-18GH z
Fujitsu
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hemt low noise die
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