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2-109A4A

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2-109A4A 600 MG300J1US51 MG300J1US51 2-109A4A MG200Q1US1 MG200Q1US1 2-109A4A MG300Q1US1 MG300Q1US1 2-109A4A MG400J1US41 MG400J1US41 2-109A4A MG400J1US51 MG400J1US51 2-109A4A MG600J1US51 MG600J1US51 MG800J1US51 MG800J1US51 2-109A4B 2-109A4B 2-109A4B 2-109A4B 1200 MG200G1US41 MG200G1US41 2-109A4A MG300Q1US41 MG300Q1US41 2-109A4A MG400Q1US1 MG400Q1US1 MG500Q1US1 MG500Q1US1 2-109A4A 2-109A4A MG400Q1US2 MG400Q1US2 MG500Q1US2 MG500Q1US2 2-109A4B 2-109A4B 2-109A4B 2-109A4B MG600Q1US41 MG600Q1US41 MG400Q1US41 MG400Q1US41 2-109A4B 2-109A4B 2-109A4A MG400Q1US42 MG400Q1US42 2-109A4B 2-109A4B MG360V1US41 MG360V1US41 (360 A) 2-109A4B 2-109A4B 1700 us 8 15 25 MG25J2YS40 MG25J2YS40 2-94D1A 2-94D1A 600 MG50J2YS50 MG50J2YS50 2-94D1A 2-94D1A MG240V1US41 MG240V1US41 (240 A) 2-109A4A 50 MG50J2YS40 MG50J2YS40 ... OCR Scan
datasheet

5 pages,
185.07 Kb

3rd Generation of 1200V IGBT circuit MG200Q2YS9 MG100J6ES40 mg200j2ys40 MG150J2YS40 mg300q1us41 2-94B1A MG200Q2YS1 2-95A1A MG100J2YS40 MG400J2YS40 MG75J6ES40 MG50J6ES40 datasheet abstract
datasheet frame
Abstract: ] MG200Q1US41 MG200Q1US41 1200 200 400 4,0 200 200 300 1400 2-109A4A 1 MG300Q1US41 MG300Q1US41 1200 300 600 4,0 300 300 200 2000 2-109A4A 1 MG300Q1US51 MG300Q1US51 1200 400 800 3,6 300 50 100 2500 2-109F1A 2-109F1A 1 MG400Q1US41 MG400Q1US41 1200 400 800 4,0 400 300 800 2400 2-109A4A 1 MG200J2YS50 MG200J2YS50 600 200 400 2,7 200 150 150 900 2-95A1A 2-95A1A 2 MG300J2YS50 MG300J2YS50 600 300 600 2 , KOMnaHMM TME MHTEPTEKC www.i-t.su info@i-t.su Ten: (495) 739-09-95, 644-41-29 electronics 2-109A4A ... OCR Scan
datasheet

3 pages,
1588.95 Kb

2-109C1A 2-94A2A 2-95A1A 2-95A4A MG*Q2YS51 MG100Q2YS42 MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 MG400Q1US41 MG50Q2YS40 MG300J2YS50 MG200J2YS50 datasheet abstract
datasheet frame
Abstract: T0-220 T0-220(SM) 15 A FRD MG300J1US1 MG300J1US1 2-109A4A 600 MG300J1US51 MG300J1US51 2-109A4A MG200Q1US1 MG200Q1US1 2-109A4A MG300Q1US1 MG300Q1US1 2-109A4A MG400J1US41 MG400J1US41 2-109A4A MG400J1US51 MG400J1US51 2-109A4A MG400Q1US1 MG400Q1US1 2-109A4A MG400Q1US2 MG400Q1US2 2-109A4B 2-109A4B MG400Q1US41 MG400Q1US41 2-109A4A MG400Q1US42 MG400Q1US42 2-109A4B 2-109A4B MG360V1US41 MG360V1US41 (360 A) 2-109A4B 2-109A4B MG500Q1US1 MG500Q1US1 2-109A4A MG500Q1US2 MG500Q1US2 2-109A4B 2-109A4B MG600J1US51 MG600J1US51 MG800J1US51 MG800J1US51 2 109A4B 109A4B 2-109A4B 2-109A4B 1200 MG20001US41 MG20001US41 2-109A4A MG300Q1US41 MG300Q1US41 2-109A4A MG600Q1US41 MG600Q1US41 2-109A4B 2-109A4B 1700 u s MG240V1US41 MG240V1US41 (240 A) 2-109A4A 8 15 25 MG25J2YS40 MG25J2YS40 2-9401A 50 ... OCR Scan
datasheet

11 pages,
394.86 Kb

GT60J101 3rd Generation of 1200V IGBT circuit MG150Q2YS40 MG100J2YS45 MG200Q2YS1 MG25J2YS40 MG400Q1US11 MG75J2YS40 MG400J2YS40 mg100q2ys9 MG75Q2YS11 MG75J6ES40 MG50Q6ES11 datasheet abstract
datasheet frame
Abstract: T0-3P(N) TQ-220SM TQ-220SM 15 9MAX * 3 2' 0 . } 1. Gate 2. Collector (Heat Sink) 3. Emitter 1. Gate 2. Collector (Heat Sink) 3. Emitter T0-220 T0-220(IS) TO-3P(LH) 1. Gate 2. Collector 3. Emitter 1. Gate 2. Collector (Heat Sink) 3. Emitter 19 T0-3P(L) 2-109A4A 3'0 5 24' 0 5 103=0 5 54'0 8 1. Gate 2. Collector (Heat Sink) 3. Emitter - j 106'0 8_ | [_ i 60'0 8 1 2-109E1A 2-109E1A 2-94D1A 2-94D1A 4 -F A S T -O N -T A B Л110 20 2-109C1A 2-109C1A 4 -Fart-on T ib #110 ... OCR Scan
datasheet

4 pages,
87.01 Kb

TQ-220SM TQ-220SM abstract
datasheet frame
Abstract: MG240V1US41 MG240V1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case High input impedance Enhancement-mode High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g(Typ.) 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1700 V Gate-emitter ... Original
datasheet

5 pages,
476.12 Kb

MG240V1US41 MG240V1US41 abstract
datasheet frame
Abstract: MG300J1US51 MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g (Typ.) 2-109A4A ... Original
datasheet

5 pages,
452.05 Kb

MG300J1US51 TOSHIBA IGBT DATA BOOK MG300J1US51 abstract
datasheet frame
Abstract: 1 min.) V 2/3/3 2-109A4A N·m Collector current Forward current Screw ... Original
datasheet

5 pages,
461.98 Kb

MG400J1US51 MG400J1US51 abstract
datasheet frame
Abstract: MG300Q1US41 MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter ... Original
datasheet

6 pages,
387.12 Kb

MG300Q1US41 MG300Q1US41 abstract
datasheet frame
Abstract: MG400Q1US41 MG400Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US41 MG400Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage ... Original
datasheet

6 pages,
392.49 Kb

TOSHIBA IGBT DATA BOOK MG400Q1US41 MG400Q1US41 abstract
datasheet frame
Abstract: MG300Q1US41 MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter ... Original
datasheet

6 pages,
195.7 Kb

MG300Q1US41 MG300Q1US41 abstract
datasheet frame
Abstract: MG200Q1US41 MG200Q1US41 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. U nit in mm · · · · · High Input Impedance High Speed : tf=0.5//s(M ax.) : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case. E JEDEC EIAJ TOSHIBA W eight : 465g Sj | ¿ « O Í L tz za Ä jo a J i- b - ri- a ' 4 X 5 I r I I- EQUIVALENT CIRCUIT o -H « iL = G (B) M A X IM U M RATINGS (Ta » 25°C) 2-109A4A UNIT RATING ... OCR Scan
datasheet

6 pages,
142.33 Kb

MG200Q1US41 MG200Q1US41 abstract
datasheet frame