NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ] MG200Q1US41 MG200Q1US41 1200 200 400 4,0 200 200 300 1400 2-109A4A 1 MG300Q1US41 MG300Q1US41 1200 300 600 4,0 300 300 200 2000 2-109A4A 1 MG300Q1US51 MG300Q1US51 1200 400 800 3,6 300 50 100 2500 2-109F1A 2-109F1A 1 MG400Q1US41 MG400Q1US41 1200 400 800 4,0 400 300 800 2400 2-109A4A 1 MG200J2YS50 MG200J2YS50 600 200 400 2,7 200 150 150 900 2-95A1A 2-95A1A 2 MG300J2YS50 MG300J2YS50 600 300 600 2 , KOMnaHMM TME MHTEPTEKC www.i-t.su info@i-t.su Ten: (495) 739-09-95, 644-41-29 electronics 2-109A4A ... | OCR Scan |
3 pages, |
2-95A1A 2-95A4A MG*Q2YS51 MG200J2YS50 MG200Q1US41 MG300J2YS50 MG300Q1US41 MG300Q1US51 MG400J2YS50 MG400Q1US41 MG50Q2YS40 MG75Q2YS50 datasheet abstract |
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| Abstract: MG300J1US51 MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30us (Max.) (IC = 300A) trr = 0.15us (Max.) (IF = 300A) Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g (Typ.) 2-109A4A ... | Original |
5 pages, |
MG300J1US51 TOSHIBA IGBT DATA BOOK MG300J1US51 abstract |
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| Abstract: MG500Q1US1 MG500Q1US1 TOSHIBA GTR Module Silicon N Channel IGBT MG500Q1US1 MG500Q1US1 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5us (Max) trr = 0.5us (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage ... | Original |
6 pages, |
MG500Q1US1 MG500 MG500Q1US1 abstract |
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| Abstract: MG200Q1US41 MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5us (Max.) trr = 0.5us (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter ... | Original |
6 pages, |
mg200q1us MG200Q1US41 MG200Q1US41 abstract |
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| Abstract: MG300Q1US41 MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5us (Max.) trr = 0.5us (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter ... | Original |
6 pages, |
MG300Q1US41 MG300Q1US41 abstract |
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| Abstract: MG240V1US41 MG240V1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case High input impedance Enhancement-mode High speed : tf = 1.5us (Max.)(IC = 240A) trr = 0.6us (Max.)(IF = 240A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g(Typ.) 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1700 V Gate-emitter ... | Original |
5 pages, |
MG240V1US41 MG240V1US41 abstract |
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| Abstract: 1 min.) V 2/3/3 2-109A4A N·m Collector current Forward current Screw ... | Original |
5 pages, |
MG400J1US51 MG400J1US51 abstract |
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| Abstract: MG400Q1US41 MG400Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US41 MG400Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5us (Max.) trr = 0.5us (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage ... | Original |
6 pages, |
TOSHIBA IGBT DATA BOOK MG400Q1US41 MG400Q1US41 abstract |
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| Abstract: MG400Q1US41 MG400Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US41 MG400Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5us (Max.) trr = 0.5us (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter ... | Original |
6 pages, |
MG400Q1US41 MG400Q1US41 abstract |
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| Abstract: MG300Q1US41 MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5us (Max.) trr = 0.5us (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter ... | Original |
6 pages, |
MG300Q1US41 MG300Q1US41 abstract |
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