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2-109A4A

Catalog Datasheet MFG & Type PDF Document Tags

MG75J2YS40

Abstract: MG100J2YS45 2-109A4A 600 MG300J1US51 2-109A4A MG200Q1US1 2-109A4A MG300Q1US1 2-109A4A MG400J1US41 2-109A4A MG400J1US51 2-109A4A MG600J1US51 MG800J1US51 2-109A4B 2-109A4B 1200 MG200G1US41 2-109A4A MG300Q1US41 2-109A4A MG400Q1US1 MG500Q1US1 2-109A4A 2-109A4A MG400Q1US2 MG500Q1US2 2-109A4B 2-109A4B MG600Q1US41 MG400Q1US41 2-109A4B 2-109A4A MG400Q1US42 2-109A4B MG360V1US41 (360 A) 2-109A4B 1700 us 8 15 25 MG25J2YS40 2-94D1A 600 MG50J2YS50 2-94D1A MG240V1US41 (240 A) 2-109A4A 50 MG50J2YS40
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OCR Scan
MG400Q1US11 MG50J2YS45 MG75J2YS45 MG100J2YS45 MG150J2YS45 2-95A1A MG75J2YS40 MG300Q1US MG200Q1US11 MG300Q1US11 MG500Q1US11 MG400Q1US21 MG500Q1US21

2-94D4A

Abstract: MG200J2YS50 ] MG200Q1US41 1200 200 400 4,0 200 200 300 1400 2-109A4A 1 MG300Q1US41 1200 300 600 4,0 300 300 200 2000 2-109A4A 1 MG300Q1US51 1200 400 800 3,6 300 50 100 2500 2-109F1A 1 MG400Q1US41 1200 400 800 4,0 400 300 800 2400 2-109A4A 1 MG200J2YS50 600 200 400 2,7 200 150 150 900 2-95A1A 2 MG300J2YS50 600 300 600 2 , 2-109A4A 2-109C1A 2-95A1A 2-95A4A nporpaMMa 2-94D1A [._9i±0-5 2-94D4A JAPAN 108± 4-0 6.5 ± 0.3
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OCR Scan
MG400J2YS50 MG100Q2YS42 MG50Q2YS40 MG75Q2YS50 2-94A2A Toshiba MG200Q2YS40 mg200q2ys50 2-109D1A MG150Q2YS40 MG150Q2YS50 MG150Q2YS51

GT250101

Abstract: MG150J2YS40 T0-220(SM) 15 A FRD MG300J1US1 2-109A4A 600 MG300J1US51 2-109A4A MG200Q1US1 2-109A4A MG300Q1US1 2-109A4A MG400J1US41 2-109A4A MG400J1US51 2-109A4A MG400Q1US1 2-109A4A MG400Q1US2 2-109A4B MG400Q1US41 2-109A4A MG400Q1US42 2-109A4B MG360V1US41 (360 A) 2-109A4B MG500Q1US1 2-109A4A MG500Q1US2 2-109A4B MG600J1US51 MG800J1US51 2 109A4B 2-109A4B 1200 MG20001US41 2-109A4A MG300Q1US41 2-109A4A MG600Q1US41 2-109A4B 1700 u s MG240V1US41 (240 A) 2-109A4A 8 15 25 MG25J2YS40 2-9401A 50
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OCR Scan
GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG50J6ES40 MG200Q2YS91 T0-220N 2-99A1A 2-99B1A

2-64A2A

Abstract: T03PN T0-3P(N) TQ-220SM 15 9MAX * 3 2± 0 . } 1. Gate 2. Collector (Heat Sink) 3. Emitter 1. Gate 2. Collector (Heat Sink) 3. Emitter T0-220(IS) TO-3P(LH) 1. Gate 2. Collector 3. Emitter 1. Gate 2. Collector (Heat Sink) 3. Emitter 19 T0-3P(L) 2-109A4A 3±0 5 24± 0 5 103=0 5 54±0 8 1. Gate 2. Collector (Heat Sink) 3. Emitter - j 106±0 8_ | [_ i 60±0 8 1 2-109E1A 2-94D1A 4 -F A S T -O N -T A B »110 20 2-109C1A 4 -Fart-on T ib #110
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OCR Scan
2-64A2A T03PN

MG400Q1US41

Abstract: TOSHIBA IGBT DATA BOOK MG400Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage
Toshiba
Original
TOSHIBA IGBT DATA BOOK

H-17

Abstract: H-18 . 104 0. 25 MC I-2 2-109A4A^ FDtt MG300HÃUS1 30000 10 0 1.5 2.0 1.0 1.7 6.2 0.75 300 2.5 400 0.5 400 -10 300 0.089 0. 25 MC 1-2 2-109A4A F D ti- MC400H1ÃS1 , 400 â'" 2-108B1A 4-7T tllO 2 -0&6±a3 2-109A3A ,20 ±0.5 2 -M6 ma 2-109A4A 2o±as 2-Ma |29 Â
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OCR Scan
H-17 H-18 H-19 M-10A2A M-10A2B M-11A2A M-12A6A M-12B6A M-12B6B
Abstract: MG500Q1US1 TOSHIBA GTR Module Silicon N Channel IGBT MG500Q1US1 High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Toshiba
Original

MG200Q1US41

Abstract: mg200q1us MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter
Toshiba
Original
mg200q1us

MG300Q1US41

Abstract: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter
Toshiba
Original

MG400Q1US41

Abstract: MG400Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter
Toshiba
Original

MG300Q1US41

Abstract: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum Ratings (Ta = 25°C) Characteristic 2-109A4A Symbol Rating Unit Collector-emitter
Toshiba
Original

MG500Q1US1

Abstract: MG500 MG500Q1US1 TOSHIBA GTR Module Silicon N Channel IGBT MG500Q1US1 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 465g 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage
Toshiba
Original
MG500
Abstract: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g â'• â'• 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter Toshiba
Original

MG240V1US41

Abstract: MG240V1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case High input impedance Enhancement-mode High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g(Typ.) 2-109A4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1700 V Gate-emitter
Toshiba
Original
000707EAA2

MG500Q1US11

Abstract: 1US11 2-109A4A MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Emitter Voltage VCES
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OCR Scan
1US11

MG400J1US51

Abstract: 1 min.) V 2/3/3 2-109A4A N·m Collector current Forward current Screw
Toshiba
Original

MG400J1US51

Abstract: 2500 (AC 1 min.) V 2/3/3 2-109A4A N·m Collector current Forward current
Toshiba
Original

MG300J1US51

Abstract: MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode : tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) l High speed l Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g (Typ.) 2-109A4A
Toshiba
Original

TOSHIBA IGBT DATA BOOK

Abstract: MG300J1US51 MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g (Typ.) 2-109A4A
Toshiba
Original

MG500Q1US1

Abstract: transistor 600v 500a TOSHIBA MG500Q1US1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 0 Q 1 U S 1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS â'¢ High Input Impedance â'¢ High Speed : tf=0.5^s (Max.) trr = 0.5/^s (Max.) â'¢ Low Saturation Voltage : VCE (sat) = 4.0V (Max.) â'¢ Enhancement-Mode â'¢ The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT E o Co- G (B) MAXIMUM RATINGS (Ta = 25°C) -o E Unit in mm 2-M4 2-M6 4-065 ±0.3 JEDEC EIAJ TOSHIBA 2-109A4A Weight : 465g
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OCR Scan
transistor 600v 500a 961001EAA2
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