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CDQ2 Datasheet

Part Manufacturer Description PDF Type Ordering
CDQ2B25-10D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B25-15D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B25-20D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B25-25D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B32-10D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B32-15D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
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15 pages,
1578.81 Kb

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CDQ2B32-20D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
ri

15 pages,
1578.81 Kb

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CDQ2B32-25D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
ri

15 pages,
1578.81 Kb

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CDQ2B32-30D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
ri

15 pages,
1578.81 Kb

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CDQ2B40-10D SMC Pneumatics LINEAR ACTUATOR: COMPACT CYLINDER
ri

15 pages,
1578.81 Kb

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CDQ2

Catalog Datasheet Results Type PDF Document Tags
Abstract: CAPACITANCE (Vc c = 5V ± 10%, f= 1MHz, Ta = 0~70°C) SYMBOL CI1 CI2 CI3 CI4 CDQ1 CDQ2 PARAMETER Input ... OCR Scan
datasheet

6 pages,
146.3 Kb

THM362040ASG-60 CDQ2 MO23 MO-23 IHM36204QAS/ASG-60/70/80 IHM36204QAS/ASG-60/70/80 abstract
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Abstract: ha ^ (L ) -20 2.4 - 20 0.4 H -A V V VOH > CI1 CI2 CI3 CI4 CDQ1 CDQ2 O -5mA ... OCR Scan
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6 pages,
134.61 Kb

THM368020SG60 MO23 MO-23 KAS 34 THM368020S/SG-60/70 THM368020S/SG-60/70 abstract
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Abstract: CAPACITANCE (Vc c = 5V ± 10%, f= 1MHz, Ta= 0~70°C) SYMBOL CI1 CI2 CI3 CI4 CDQ1 CDQ2 PARAMETER Input ... OCR Scan
datasheet

6 pages,
141.57 Kb

tc511000aj THM362020AS/ASG -60/70/S0 THM362020AS/ASG abstract
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Abstract: CAPACITANCE (Vc c = 5V ' 10%, f= 1MHz, Ta = 0-70АC) SYMBOL CI1 CI2 CI3 CI4 CDQ1 CDQ2 PARAMETER Input ... OCR Scan
datasheet

7 pages,
130.75 Kb

THM364020S60 THM364020S THM364020 THM364020S/SG-60/70 THM364020S/SG-60/70 abstract
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Abstract: C.DQ13 L C-DQ2 =:.iiH hhi C-DQ6 I-DQ10 I-DQ10 • DQ14 H-DQ3 T-DQ7 TZ-DQ11 TZ-DQ11 T-DQ15 T-DQ15 128Kx8 ... OCR Scan
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6 pages,
171.46 Kb

EDH816H64C 64kx4 idq10 EDH816H64C abstract
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Abstract: ] ClN1 CIN2 CIN3 CIN4 CDQ1 CDQ2 - 161 168 60 60 29 39 pF pF pF pF pF PF 87 ELECTRONICS ... OCR Scan
datasheet

6 pages,
179.8 Kb

km44c1000cj KMM5362000C2/C2G KMM5362000C2/C2G abstract
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Abstract: ) CDQ2 - 39 PF Capacitance measured with Boonton Meter. CAPACITANCE (VcC = 5V + 5%,f = 1MHz, Ta = 9 ... OCR Scan
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9 pages,
459 Kb

MSC2331A-10YS18 MSC2321A-80YS18 001035 datasheet abstract
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Abstract: Model CDQ2B12-5D -10D -15D -20D -25D -30D CDQ2B16-5D -10D -15D -20D -25D -30D CDQ2B20-5D , CDQ2B63-10D -15D -20D -25D -30D -35D -40D -45D -50D -75D -100D -100D CDQ2B80-10D -15D -20D -25D -30D , 80 90 100 Stroke St(mm) Calculation example: CDQ2B32-20DCM � Cylinder weight: CDQ2B32-20D � , pin, snap ring, bolt) 35 29 Calculation example: CDQ2D32-20DCM � Cylinder weight: CDQ2B32-20D � Option weight: Both ends tapped Rod end male thread With rubber bumper Double clevis � ... Original
datasheet

138 pages,
8485.02 Kb

CDQ2B80 DA79 YA08 torque for M6 brass bolt torque chart CDQ2B40 smc cq2b63 10 35L W1 CQ2B50- D-J79W p142 d-J79 Double Acting Cylinder cd 6283 ic wiring diagram 83 fkm 592 datasheet abstract
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Abstract: Model CDQ2B12-5D -10D -15D -20D -25D -30D CDQ2B16-5D -10D -15D -20D -25D -30D CDQ2B20-5D , CDQ2B63-10D -15D -20D -25D -30D -35D -40D -45D -50D -75D -100D -100D CDQ2B80-10D -15D -20D -25D -30D , 10 20 30 40 50 60 70 80 90 100 Stroke St(mm) Calculation example: CDQ2B32-20DCM � Cylinder weight: CDQ2B32-20D � Option weight: Rod end male thread : With rubber bumper 101g 43g � 141g , pin, snap ring, bolt) 35 29 Calculation example: CDQ2D32-20DCM � Cylinder weight ... Original
datasheet

138 pages,
18081.61 Kb

smc d-f9p D-A80C CQ2B16-5D D-J79C d-J79 d-f9n d-f9p cd 6283 ic wiring diagram ROD 486 5000 83 fkm 592 smc d-j79 reed relay 3570 1301 151 CDQ2B32-20D D-J79W datasheet abstract
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Abstract: ) CIN1 CIN2 CIN3 CIN4 CDQ1 CDQ2 - - - - - - Value M ax TBD TBD TBD TBD TBD TBD U nlt PF PF PF PF PF ... OCR Scan
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7 pages,
488.72 Kb

MB85396-60/-70/-80 MB85396-60/-70/-80 abstract
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Abstract: IS63LV1024 IS63LV1024 128K X 8 HIGH-SPEED CMOS STATIC RAM IN REVOLUTIONARY PINOUT ISSI advance SEPTEMBER 1995 FEATURES · High-speed access times: 10, 12, and 15 ns · High-performance, low-power CMOS process · Multiple center power and ground pins for greater noise immunity · Easy memory expansion with CE and OE options · CE power-down · Fast OE access times: 5, 6, and 7 ns · Fully static operation: no clock or refresh required · TTL compatible inputs and outputs · JEDEC low voltage TTL-standard ... OCR Scan
datasheet

1 pages,
32.58 Kb

IS63LV1024 IS63LV1024 abstract
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Abstract: ^EDI ELECTRONIC DESIGNS INC. . EDI8F32512C EDI8F32512C High Speed Sixteen Megabit SRAM Module Features 512Kx32 bit CMOS Static Random Access Memory · Access Times: 25,35, and 45ns · Individual Byte Selects · Fully Static, No Clocks · TTL Compatible I/O High Density Package · 72 Pin ZIP, No. 173 · 72 lead SIMM, No. 174 · Common Data Inputs and Outputs Single +5V (±10%) Supply Operation 512Kx32 Static RAM CMOS, High Speed Module The EDI8F32512C EDI8F32512C is a high speed 16 megabit Static RAM module organize ... OCR Scan
datasheet

2 pages,
65.92 Kb

OQ12 EDI8F32512C EDI8F32512C abstract
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Abstract: ADVANCE M IC R O N MT5C6416 MT5C6416 SRAM FEATURES · On-chip address latch. · Compatible with the Intel 82385 cache memory controller. · Fast access times: 25ns, 35ns and 45ns. · Upper and lower byte selects. · Fast output enable: 10ns into lOOpF load. 4K X 16 SRAM LATCHED CACHE DATA RAM PIN ASSIGNMENT (Top View) 40L DIP Vcc c CE c DQ16 c DQ15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 Vcc WE C ... OCR Scan
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1 pages,
67.58 Kb

MT5C6416 MT5C6416 abstract
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Abstract: SO LD ER SUFFIX CUSTO M ER TERMINAL Sn63% , Pb37% Sn96% , A g4% RoH S No Yes L E A D (P b )-F R E E No Yes ^ K ) LF1 DOT LOCATES TERM. TERM. N O .s FOR REF. ONLY .500 MAX. [12.70] 699 MAX [17.75] OE E iV, OE E 9 OEE 8 OEE 7 OEE 1/ 2 3 4 m En m m LU 1 1 1 1 1 b LLL n .530 MAX. m [13.46] m m CD Q 2 o o Ld 5 ^ O IO 1 LOT CODE & DATE CODE SOLDER SUFFIX CA A G> PRI 135 Ohms AREA REPRESENTS TERMINAL PAD DIMENSIONS .034(10) 7 ... OCR Scan
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1 pages,
149.96 Kb

1200VAC datasheet abstract
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Abstract: Electrical entry : Perpendicular Bore size (mm) ø10, ø16 CDJ2, CDVJ CDQ2 ø12, ø16, ø20, ø25, ø32 , contact protection box. Actuator series 6 CDJ2, CDVJ CDQ2 CDXW CDY1S CY1L RSDQ MDU CE1 MK , , ø125, ø140, ø160 CDQ2 CDXW Plate mounted(P), ø10, ø16, ø20, ø25, ø32, Housing mounted(B), ø16 , ) Actuator series CDJ2, CDVJ3, CDVJ5 CDQ2 B CDXW P CDY1S, CY1L RSDQ MDU CE1 MK, MK2 CXT 6 , into the concave part of auto switch mounting rail. Then slide the switch over the nut. (CDQ2 series ... Original
datasheet

8 pages,
479.61 Kb

smc d-a73c D-A73C D-A59W d-f7p smc d-j79 d-f9nv d-j79 d-a73 magnetic switch D-Y69A smc d-b54 D-A72 D-F79W smc D-A53 SMC D-A73 D-C73/C76/C80 D-B53/B54/B64 D-C73/C76/C80 abstract
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Abstract: ^ E D I 64Kx24SRM tllgóule EDI8F2464 EDI8F2464Ç Features 64Kx24 bit CMOS Static Random Access Memory Access Times 15r 20, and 25ns Output Enable Function Fully Static, No Clocks TTL Compatible I/O High Density Packaging · 56 Pin ZIP, No.160 · Common Data Inputs and Outputs Single +5 V (±10%) Supply Operation 64Kx24Static RAM CMOS, Hicfi SpeedModule TTie EDI8F2464C EDI8F2464C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is constructed from six 64Kx4 Static RAMs in S ... OCR Scan
datasheet

6 pages,
78.05 Kb

GU 7470 IC 7470 EDI8F2464 EDI8F2464 abstract
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Abstract: ELECTRONIC DESIGNS INC ^EDI Electronic Dttlgn* Inc. - SIE D - 3230114 0001110 STO -ELB EDI8F16257C EDI8F16257C High Speed Commercial Four Megabit SRAM Module 256KX16 256KX16 Static RAM High Speed CMOS, Module The EDI8F16257C EDI8F16257C is a 256Kx16 CMOS Static RAM Module consisting of four (4) 256Kx4 CMOS Static RAMs in plastic chip carriers surface mounted onto a multi-layered epoxy laminate (FR4) substrate. Fully asynchronous circuitry requires no clocks or refreshing for operation and provides equal access and cycl ... OCR Scan
datasheet

6 pages,
309.97 Kb

dab circuitry D010 256KX16 datasheet abstract
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Abstract: CDJP CDU CDQ2 CDQS MDU/CDE1 CDM2 CDG1 CDA1/CDNA/CE2 MDB/MDBB CDS1 CDL , : Perpendicular Bore size (mm) Э10, Э16 CDJ2, CDVJ CDQ2 Э12, Э16, Э20, Э25, Э32, Э40, Э50, Э63, Э80 , box. Actuator series 6 CDJ2, CDVJ CDQ2 CDXW CDY1S CY1L RSDQ MDU CE1 MK, MK2 CXT 10 , CDQ2 Э12, Э16, Э20, Э25, Э32, Э40, Э50, Э63, Э80, Э100, Э125, Э140, Э160 CDXW Plate mounted , CDQ2 CDXW CDY1S CY1L RSDQ MDU CE1 MK, MK2 CXT 10 8 12 15 10 B P 6 6 6 6 ... Original
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75 pages,
2800.74 Kb

ZENER A33 39A zener diode A54 ZENER ic relay 24v D-A73 relay g59 relay 8 pin 24v dc D-Y59A smc d-j79 D-Z73 smc d-b54 d-f9n D-A53 D-P5DW datasheet abstract
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Abstract: DENSE-PAC m i c r o s y s t e m s /-//gf/? f t l- ^ { L IA S t o S 128 Megabit Synchronous DRAM Density Memory Device DPSD32MX4RY5 DPSD32MX4RY5 DESCRIPTION: The series is a jam i]y o f in te ich a n g e a b Je m em. or/m o du Jes. The 128 M egabitSD RAM isam em. b e r o fthisfem ify w h ic h u tU iz e sth e n e w and in n o vative space saving TSO P stacking tech n o Jo g y. The m o d u Jes a jb constructed w i t h l 6 M e g x 4 SD RAM s. PIN-OUT DIAGRAM vcc N.C. VC C Q N.C. DQ0 VSSQ N.C. N. ... OCR Scan
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2 pages,
63.43 Kb

DPSD32MX4RY5 DPSD32MX4RY5 abstract
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Abstract: Data Sheet Part No. ISSD128M4STB ISSD128M4STB Irvine Sensors Corporation Microelectronics Products Division 512Mbit (128M x 4) Synchronous DRAM Memory Stack Features: q q q Low Profile: same PCB footprint as a monolithic TSOP Provides a cost-effective emulation of a 512 Mbit SDRAM by using 2 low cost 256 Mbit SDRAMs. Low cost, economical for volume commercial applications q JEDEC Stan ... Original
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2 pages,
51.97 Kb

TSOP sensor datasheet TOSHIBA part numbering K4S560432 ISSD128M4STB tsop sensor ISSD128M4STB abstract
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