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Part Manufacturer Description Datasheet BUY
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1612J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1612J Texas Instruments SILICON, RECTIFIER DIODE, CERDIP-8 visit Texas Instruments

2 Amp rectifier diode

Catalog Datasheet MFG & Type PDF Document Tags

FULL WAVE RECTIFIER CIRCUITS

Abstract: FULL WAVE RECTIFIER and waveforms half-wave rectifier uses an MBRM110LT3 Schottky diode and the MCP661 op amp with different load resistors , Applications AM Demodulator V D1 t VIN VOUT FIGURE 2: Positive Half-Wave Rectifier. V , input voltage across the diode when reverse biased. A similar circuit in Figure 2 shows a positive , that the diode is forward biased. D1 VOUT V AC RL t VIN VOUT FIGURE 1: Rectifier. RL FIGURE 3: VIN VOUT Full-Wave Rectifier. Choosing the Components SELECTING THE DIODE
Microchip Technology
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AN1353 FULL WAVE RECTIFIER CIRCUITS FULL WAVE RECTIFIER and waveforms 10 amp diode rectifiers op amp as adder 1N4148 general diode sample advantages of resistor DS01353A-

Q2N4401

Abstract: D1N3940 Diode Pressure Sensor Power Bipolar Transistor Power Driver (Analog) Power MOSFET Radio System Rectifier Relay Driver RF Bipolar Transistor RF Mosfet Schottky Diode Sense Amplifier Sample-and-Hold Amplifier Silicon-Controlled Rectifier Small-Signal Mosfet Switch Tone Controller Transmission Line Transistor Array Triac , Bipolar Transistor Bridge Driver Buffer (Analog) Connector Magnetic Core Current Regulator Diode Quartz Crystals Current Detector Current Driver Demodulator Diode Diodes and Rectifiers Filter Fluid Level
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Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

NTE116 cross reference

Abstract: NTE135A NTE123AP Transistor, NPN, Si, Audio Amp, Switch TO92 5 3358 NTE125 Diode, Si, 1000 PRV , Rectifier, Si, 1000 PRV, 3A DO15 5 787 NTE159 Transistor, PNP, Si, Low Noise Audio Amp , Switch TO220 5 328 NTE392 Transistor, NPN, Si, Power Amp, High Speed Switch TO218 2 64 NTE519 Diode, Si, Ultra Fast Switch, 100 PRV DO35 5 1750 NTE558 Rectifier, Si , NTE5304 Rectifier, Si, Bridge, 400 PRV, 1.5A TO5 Style 2 270 NTE5322 Rectifier, Si
NTE Electronics
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NTE2396 NTE5127A NTE116 cross reference NTE135A transistor power 2 Amp rectifier diode NTE109 NTE116 NTE128P NTE129P NTE156 NTE261

Germanium diode

Abstract: 5 amp diode rectifiers Purpose Rectifier Small Signal Schottky Diode Fast Switching Rectifiers Fast Switching Rectifiers 1 Amp , Silicon Diode 1 Amp Schottky Rectifier 1 Amp Schottky Rectifier 1 Amp Schottky Rectifier Ultra Low Leakage , Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diode 400m A Rectifier 400m A Rectifier 400m A Rectifier High Voltage Silicon Diodes Gold Bonded Germanium Diode Gold Bonded Germanium , 1 Amp Rectifiers Silicon Switching Diode 400 mWatt Low Noise Zener Diodes Silicon Switching Diode
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Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp zener diode 1N34A 1N38A 1N60A 1N100A 1N270 1N276

2 Amp zener diode

Abstract: OM9001SS 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. POWER RECTIFIER CHARACTERISTICS PIV ISM Junction rectifier. TC = 25 C, IS = -40 A, VGS = 0 Continuous Source Current (Body Diode) symbol , A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. POWER RECTIFIER CHARACTERISTICS PIV - , Cycle 2%. Max. Reverse Current ISM Junction rectifier. TC = 25 C, IS = -15 A, VGS = 0 , OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE
International Rectifier
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MIL-S-19500

400v 20 amp mosfet

Abstract: OM9001SS -140 the integral P-N o^î-^ J (Body Diode) Junction rectifier. 5 Vso Diode Forward Voltage1 , = 100A/ps 1 Pulse Test: Pulse Width < 300nsec, Duty Cycle < 2%. POWER RECTIFIER CHARACTERISTICS PIV , ) -100 A vgn Diode Forward Voltage1 -2 v Tc = 25°C, ls = -30 A, Vos = 0 V Reverse Recoveiy Time , rectifier. 0 ) E Igy Source Current' (Body Diode) -60 A Vjo Diode Forward Voltage' -1.6 V Tc = 25 , Puis® Test: Pulse Width < 300(jsec, Duty Cycle < 2%. POWER RECTIFIER CHARACTERISTICS PIV Max. Reverse
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400v 20 amp mosfet 150DIA-

ZENER A16

Abstract: , Duty Cycle' 2%. IH fcH .c -D POWER RECTIFIER CHARACTERISTICS a 100V -vJ JD PIV , -100 A -2 V (Body Diode) Ism Source Current1 (Body Diode) Vsn Diode Forward , ls, dlp/ds= 100 A/ms 1 Pulse Test: Pulse Width < 300jisec, Duty Cycle < 2%. POWER RECTIFIER , ) Junction rectifier. Source Current1 (Body Diode) Vgo 0 Modified MOSPOWER symbol showing s , showing Source Current1 -5 2 (Body Diode) A / | ^ the integral P*N o -U I-L
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ZENER A16 9001SS 9002SS 9003SS 9004SS

2 Amp rectifier diode

Abstract: 3RUS2180 50º Amb., IO 1.25 Amp. 1.50 Amp Avg. Output Current @ 60º C lead temperature Lead Temp-measured 3/3" from body of diode 2 Amp. 2.5 Amp Max. Reverse Current @ PRV and 25º C IR 5µA , ://download.siliconexpert.com/pdfs/diode/edv/3rus.html (2 of 3)6/26/2005 6:26:14 PM EDI High Voltage, High Current , EDI High Voltage, High Current Ultra-Fast Recovery Silicon Rectifier Diodes 3RUS2, 3RUS4 High Voltage, High Current Silicon Rectifier Diodes 3RUS.GIF (7624 bytes) PRV 1,200V 1,500V 1
Electronic Devices
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3RUS2120 3RUS2150 3RUS2180 3RUS4120 3RUS4150 3RUS4180
Abstract: 1 Pulse Test Pulse Width £ 300*isec, Duty Cyde S 2%. POWER RECTIFIER CHARACTERISTICS PIV 100V , (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 Modified MOSPOWER -25 -100 -2 A A V ns , OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE , Bi-Lateral Zener Gate Protection Uncommitted Power MOSFET And High Efficiency Power Rectifier Low RD S (o n , feature the latest advanced MOSFET and rectifier in a single, cost effective herm etically sealed package -
OCR Scan

4E smd diode

Abstract: Zener diode quad surface mount -4 CMLSH-4DO CMLSH05-4 CMLSH05-4DO 2 x 4448 High Speed Switching Diode 2 x 4448 High Speed Diodes , x 40V Low Vp Schottky Diode 2 x 40V Low Vp Schottky Diodes with opposing polarity 1 See See , 2 See page 614 See page 614 See page 614 Bridge Rectifier - SOT-143 The CMFBR-6F is a , See page 300 10 Amp, 40 Volt Schottky Rectifier prC\\tniT'a !l - SOT-223C The CZSH10-40CN Schottky rectifier consists of two 5 Amp Schottky rectifier chips configured with common cathodes. The new
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4E smd diode Zener diode quad surface mount composition of material used in zener diode Schottky Diode SOT-89 smd schottky diode A2 SOD-123 smd transistor 662 CMLD4448 CMLD4448DO CMLD6001 CMLD6263 CMLD6263A CMLD6263C

DIODE ED

Abstract: HFA15T860 amp, ultra-fast recovery epitaxial diode (FRED) in power switching circuits. This device, the first , , MOSFET, etc). vF iF Figure 2. Diode current and voltage waveform definitions trr The total time , SofbieM dl(rec)M/dt (A/^i) Diode 'rrm (Amp) Diode Te , 'rrm (Amp) Diode Tc («C) IGBTTC (*C) HFA15TB60 998 15 66.5 64.3 Brand A 1405 23 815 715 Brand B , and the diode junction temperature are known (Ref. 1 & 2). Switching losses, Psw, are more difficult
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AN-989 AN-967 AN-983 DIODE ED HFA15T860 ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE DIODE ITT 310 an967 calculation of IGBT snubber 0492-M10
Abstract: -11 Page Number: 2/5 MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier , MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 15.0 A , Cycle 2. Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width £ 40ms , CAPACITANCE PER DIODE 4000 300 200 150 2 5 10 20 50 100 Number of cycles at 60 Hz , MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ratings and Fagor
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2002/95/EC 2002/96/EC J-STD-020 MIL-STD-750 J-STD-002 JESD22-B102

marking code 18 surface mount diode

Abstract: MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Voltage 45 V Current 25.0 A TO-263AB / D2PAK 4 2 3 1 FEATURES Low leakage current Ideal for automated , -11 Page Number: 1/5 MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier , . www.fagorelectronica.com Document Name: mbrs25hctc Version: Nov-11 Page Number: 2/5 MBRS25HCTC 25.0 Amp. Surface , grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test. CASE PIN 4 PIN 1 PIN 3 TYPICAL
Fagor
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marking code 18 surface mount diode MBRS25H45CTC
Abstract: MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Voltage 45 V , Width, 1% Duty Cycle 2. Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width , MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ordering information , MIN. 2.032 MIN. 2.67 2.41 Version: Nov-11 Page Number: 2/5 MBRS25HCTC 25.0 Amp. Surface , Number: 3/5 MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Fagor
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4A05 diode

Abstract: ct 4a05 Axial Lead 1.0 Amp Glass Passivated Rectifier Assembly 4.250 Figure 7 HVF2500 2500 0.5 , 150 HVUF-Ultra Fast Recovery Trr 75 nsec Axial Lead 1.0 Amp Rectifier Assembly 4.250 Figure 7 , Recovery Axial Lead 3.0 Amp Glass Passivated Rectifier Assembly Max. Surge Current IFSM(8.3ms) A(Amps , HVFS-Fast Recovery Trr 250 nsec Axial Lead 3.0 Amp Glass Passivated Rectifier Assembly 6.5 Figure 8 , nsec Axial Lead 3.0 Amp Fast Efficient Glass Passivated Rectifier Assembly HVFES2500 2500 1.3
HV Component Associates
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4A05 diode ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG CT500K6AA80 CT500K6AA100 CT500K6AA120 CT500K6AA160 CT700 CT700U6AA60

PK MUR 1100E DIODE

Abstract: PK MUR 1100E 75 10 ns mJ ns µA 180E 1100E Unit Volts 2 Rectifier Device Data MUR1100E MUR180E , recommended choices for future use and best overall value. Rectifier Device Data © Motorola, Inc. 1999 1 , 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C) Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/µs) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) Maximum Forward Recovery Time (IF = 1.0 Amp, di
Motorola
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PK MUR 1100E DIODE PK MUR 1100E DIODE MOTOROLA MUR1100e pk mur1100e voltage rectifier diode motorola MUR1100E/D U180E U1100E

FAGOR DIODE

Abstract: 5H60C MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Voltage 45 to 60 V Current 15.0 A TO-263AB / D2PAK 4 2 3 1 FEATURES Low leakage current Ideal for , -11 Page Number: 1/5 MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier , . www.fagorelectronica.com Document Name: mbrs15hctc Version: Nov-11 Page Number: 2/5 MBRS15HCTC 15.0 Amp. Surface , MBRS15HCTC 15.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ratings and Characteristics
Fagor
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FAGOR DIODE 5H60C marking code 5H diode s15h

PK MUR 1100E DIODE

Abstract: PK MUR 1100E 600 10 trr 100 75 tfr WAVAL 75 10 ns mJ ns µA 180E 1100E U i Unit Volts 2 Rectifier Device Data , Motorola recommended choices for future use and best overall value. Rectifier Device Data © Motorola , Forward Voltage (1) (iF = 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) Maximum Instantaneous Reverse , = 1.0 Amp, di/dt = 50 Amp/µs) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V) Controlled Avalanche Energy (See Test
Motorola
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diode 217 motorola MUR 1100E DIODE

thyristor control arc welding rectifier circuit

Abstract: 400 amp SCR used for welding rectifier meanings M 1 2 3 4 5 1: M for Module 2: Letter code for subtype of module D: rectifier diode Z , 3 4 5 1: M for Module 2: Letter code for subtype of module D: rectifier diode Z: fast recovery , Module 2: Letter code for subtype of module D: rectifier diode Z: fast recovery diode T: phase , VRRM 3 4 5 1: M for Module 2: Letter code for subtype of module D: rectifier diode Z: fast , 4 5 1: M for Module 2: Letter code for subtype of module D: rectifier diode Z: fast recovery
Greegoo Electric
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thyristor control arc welding rectifier circuit 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier ISO9001 DXC-684H DXC-603-1H DXC-614H

MYXDB0600-10CEN

Abstract: silicon carbide SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in , Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Electrical , re P Silicon Carbide Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN Revision , Maximum Ratings* (Per single diode) Symbols Figure 1: TO-258 5 PIN Pin 2 Pin 3 Pin 4 Pin 5 NC , Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in * Absolute Maximum Ratings
Micross Components
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silicon carbide MIL-PRF-19500 MYXDB06
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