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Part Manufacturer Description Datasheet BUY
OPA631N/250 Texas Instruments SpeedPlus(TM) Low Power, Single Supply Operational Amplifiers 5-SOT-23 visit Texas Instruments
OPA681N/250 Texas Instruments SpeedPlus(TM) Wideband, Current Feedback Operational Amplifier with Disable 6-SOT-23 visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

1n250 diode

Catalog Datasheet MFG & Type PDF Document Tags

1n250 diode

Abstract: 1N248 R3110 100 1N1193 1N2021 1N2795 S3115 R3115 150 1N250, 1N1194, 1N2796 S3120 R3120 200 1N2022, 1N2797 , . Temperature soak 14 110 120 130 140 150 160 170 180 190 200 Diode Case Temperature, °C Fig. 1â , Amperes per Diode Fig. 2â'"Maximum power dissipation versus for- ward current. 1000 10 1.0
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R3170 S3180 S3190 R31100 1n250 diode 1N248 S3150 R3105 s314 S3170 R318CI R3190

1N33A

Abstract: 1n250 diode 3869720 GENERAL DIODE CORP GENERAL DIODE CORP STUD MOUNTED SILICON POWER RECTIFIERS 86D 00322 D T'OI"/f at dF| 301^750 0000325 0 j" I I" ö o 1 O- 1N248 DO-5 50 10 @ 150 1.5 @ 25 1N248A, B DO-5 50 20 @ 150 1.5 @ 50 1N249 Do-5 100 10 @ 150 1.5 @ 25 1N249A, B Do-5 100 20 @ 150 1.5 @ 50 1N250 DO-5 200 10 @ 150 1.S @ -25 1N250A, B Do-5 200 20 @ 150 1.5 @ 50 1N253 Do-4 95 1@150 2@2 1N254 , Framlnflham, MA 01701 (617)875-0880-1-2 GENERAL DIODE CORPORATION
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1N255 1N25S 1N339 1N340 1N1117 1N33A 1N34* diode diode 1n34 1n607a 1N332 1N333 1N334 1N335

IXTH1N250

Abstract: © N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings , Intrinsic Diode Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless , RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise , 4.8 5.0 IXTH1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance , Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10
IXYS
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10-25-10-D
Abstract: ) = 2500V = 1.5A ≤ 40Ω Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S , Voltage High Voltage Package Fast Intrinsic Diode Low Package Inductance Advantages Easy to Mount , Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values , . 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3 3 TJ = - 40ºC 2.5 , CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10-D IXYS IXYS
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IXTT1N250HV DS100521

IXTH1N250

Abstract: 1n250 diode N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions , Intrinsic Diode Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless , Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min , 5.0 IXTH1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3 , CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10-D IXYS
IXYS
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T1N2

IXTF1N250

Abstract: T1N2 Tab 4 = Isolated 1.13 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test , 4.8 5.0 IXTF1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance , Dimensions. IXYS REF: T_1N250 (5P)12-17-09-B IXYS
IXYS
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50/60H

IXTH1N250

Abstract: 1n250 diode High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS , UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance Advantages , td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol Test Conditions (TJ = 25 , Drop of Intrinsic Diode g f s - Siemens 2 125ºC 1.5 2 IS - Amperes 1.5 TJ = 125ºC 1 TJ = , 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N250
IXYS
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DS99761C

09 45 845 0001

Abstract: T1N2 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values , 4.6 4.8 5.0 IXTH1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7 , reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_1N250 (5P)9-29-08
IXYS
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09 45 845 0001 200V TO-247 DS99761A
Abstract: 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified , Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3.0 3.0 TJ = - 40ºC 2.5 2.5 , : T_1N250 (5P)12-17-09-B IXYS IXYS
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FD6666 diode

Abstract: diode BY100 DIODE AND RECTI FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 â'¢ AA117 AA118 AA119 AA120 AA121 AA123 AA130 AA131 AA132 AA133 AA134 AA135 AA136 AA137 AA138 BY 127 BY127 AA118 AA116 AA119 AA118 AA115 AA113 BAY63 1N4002 1N4004 1N4004 1N4005 1N4005 1N4006 1N4007 1N4001 1N4002 OA70 , 1N209 1N210/1 1N212 1N215 1N216 1N217 1N220 1N248A-B 1N249 1N249A-B 1N250 1N251 1N252 1N253/4/5 1N254R
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FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 diode aa119 OA70-79-172 RL41G OA70-90 OA81-90-174 GA200-203 2NN41

BA100 diode

Abstract: BA102 DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 AA117 AA118 AA119 AA120 AA121 AA123 AA130 AA131 AA132 AA133 AA134 AA135 AA136 AA137 AA138 BY 127 x BY127 r ' i AA118 AA116 ' AA119 AA118 AA115 AA113. BAV63 t 1N4002 1N4004 1N4004 1N4005 1N4005 1N4006 1N4007 , . 1N248A-B BYX52/600, B\(Z14. v 1N249 BYX42/300, BYZ14. 1N249A-B BYX52/600, BYZ14. 1N250 BYX52/300, BYZ14
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BA102 AAY20 B2M1-5 1N2528 PH1021 DIODE AA116 AA111-116-119-121-123-143 AA116-119-121-123-137-143 SFD104 AA119-123-143 AA112-121-123-143 GA201

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP

hep 154 silicon diode

Abstract: zy 406 transistor -3.6V 1W Zener Diode -6.2V 1W Zener Diodeâ'" 9.1V JW Zener Diodeâ'"I 2V 1W Ge Diode (1N34A Substitute) (ire Diode (1N60 Substitute) Si Power Reetifier-Studâ'" 50PIV l5Amp Si Power Reetifier-Stud , -200PIV 3Amp Si Dual Diode Common Cathode Si Dual Diode-Common Anode Si Rectifierâ'" Axial L e a d - , Si Unijunction Transistor 300mW Si Bilateral Trigger Diode Si Photo Transistor Thyristor (SC R , Case) Silicon Press-Fit Rectifier (Anode to Case) 4.7 Volt Zener Diode ] Watt 5.6 Volt Zener Diode 1
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hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 triac zd 607 hep 154 diode ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode , TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS® TI Worldwide Sales Offices ALABAMA: Huntayille, 4717 University Dr , . Texas Instruments INCORPORATED The Transistor and Diode Data Book for Design Engineers First Edition , DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

IN3492

Abstract: sg 4001 diode S 2 5 ° C DIODE 1N38B 1N39A 1N39B 1NA3 1NAA INA 5 1NA6 1NA7 1NA8A 1N57A IN 5A A , A 125 125 0 .6 300 G 300 G NIAX VALUES 0 25 ° DIODE 1NI1B 1N 118 A 1N 126 1N , VALUES e 2 5 ° DIODE 1N 298A Vw 35 PRV If Vf 50 20 1 .5 50 Ir 5000 20 , 9 9 7 , 1N207 u T Y MAX VAI UES â'¢ 2 5 ° DIODE 1N 252 1N 253 1N 2 5 3 J a N 1n 2 5 5 , 8 8 3 ,1 N 8 8 4 IR 15 MAX VALUES 0 2 5 ° DIODE vâ'ž PRV Vf If IR T Y P
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IN3492 sg 4001 diode 1NA4 175e100 diode 1n6 md914 DA200 0A202 1N34AL PR9163 PR9163R PR9164

IC HXJ 2038

Abstract: 1N52398 Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER , SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS , T E D The T ransistor and Diode Data Book Design Engineers First Edition for T e x a s In s , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the
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IC HXJ 2038 1N52398 tfk 102 cny 70 DB5T hxj 2038 rca 40361 transistor

silec

Abstract: 1N6227 Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER , SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS , T E D The T ransistor and Diode Data Book Design Engineers First Edition for T e x a s In s , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the
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silec 1N6227 GG 84 2G300 1n623 chn 543

IN2222A

Abstract: TM106 new diode products: Silicon Glass Rectifiers and Miniature Silicon Whiskerless Diodes. SILICON
Transitron
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IN2222A TM106 3N68 TCR43C transitron catalog 1n9448

transistor c2060

Abstract: Germanium itt DR â'" Diode, Reference DZ â'" Diode, Zener DS â'" Diode, Signal SH A D IN G IN D IC ATE S , 1N250 1N250A 1N250B s s s s s s s s s s s s .5 M 1 2 7 .5 Z Z S 5 1N248A 1N248B
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transistor c2060 Germanium itt C1906 transistor IN939 Transistor Shortform Datasheet & Cross References 2N158 JAN AN-134

RCA SK CROSS-REFERENCE

Abstract: CD4003 . 208 ZENER DIODES Regulator Diode Parameter Listings . 211 Reference Diode Parameter Listings
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CD4003 250PA120 TF408 pa189 2N2505 2N3017
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