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Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

1Zv transistor

Catalog Datasheet MFG & Type PDF Document Tags

BCY78X

Abstract: BCY79 to the base in forward direction, however, does not suffice to control a silicon transistor (e.g. when the transistor base is driven by the collector of a preceding transistor in such a way that it is reversed, lies between base and emitter but the saturation voltage of the transistor driven earlier is , /jfe=40; 7air,b = parameter BCY 78, BCY 79 1.ZV Collector-emitter saturation voltage VCEs,t = f(Ic , 4- 1 i I I 1 0 0.Z 0.1» 0.6 0.8 1.0 1.ZV
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BCY77

Abstract: BCY79 to the base in forward direction, however, does not suffice to control a silicon transistor (e.g. when the transistor base is driven by the collector of a preceding transistor in such a way that it is reversed, lies between base and emitter but the saturation voltage of the transistor driven earlier is , /jfe=40; 7air,b = parameter BCY 78, BCY 79 1.ZV Collector-emitter saturation voltage VCEs,t = f(Ic , 4- 1 i I I 1 0 0.Z 0.1» 0.6 0.8 1.0 1.ZV
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021B2

Abstract: transistor cbj PNP-Mesatransistor für HF-Anwendungen AFY 16 bis 900 MHz AFY 16 ist ein PNP-Germanium-Transistor in Mesa-Technik iim Gehäuse 18 A 4 DIN 41 876 (TO-72). Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor AFY 16 ist für die Verwendung in Vorstufen sowie in Misch- und Oszillatorstufen bis 900 MHz geeignet. Typ Bestellnummer AFY 16 Q60106-Y16 Grenzdaten , -% = 1ZV / / 8V I/ S
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021B2 transistor cbj hmv12 15bis pnp germanium transistor AFY16 B63310-K1-A12

2SA1256

Abstract: 5P J TRANSISTOR MARKING Ordering number:EN1056C": No.l056C i _2SA1256 PNP Epitaxial Planar Silicon Transistor High-Frequency Amp Applications Applications â'¢ Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. Features â  High fT (230MHz typ), and small Cre (l.lpF typ). â'¢ Small NF (2.5dBtyp). Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage vcbo -30 V , _ V CE- - 1ZV bV - 3 V
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5P J TRANSISTOR MARKING 230MH 100MH

ANI 1015

Abstract: t3hs SANYO SEMICONDUCTOR CORP SHE D 7=H707b QQObTlS T 2SA1688 T-3HS 2059 PNP Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp Applications ©2798 Applications â'¢ Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers Features â'¢ High power gain : PG , ) Collector to Emitter Voltage,VCB - V hfE - lc vc -1zv -1- , Sanyo surface mount transistor case outlines are illustrated below. ®A11 dimensions are in mm, and
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ANI 1015 t3hs TRANSISTOR SE 135 2SA1688-

2sc710 transistor

Abstract: 2sc710 MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM · AM RADIO HIGH AND MEDIUM , silicon NPN epitaxial type transistor designed for high frequency amplify application. OUTLINE DRAWING , - 3 MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM - AM RADIO HIGH AND , ELECTRIC MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM · AM RADIO HIGH AND , < / Vc 3 6V 1ZV \ b» 0.02 Ê 0.01 K 0.005 Vc 6V 1?V cc UJ 5 < h- 0.05 0* < cc H
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2sc710 transistor transistor 2SC710 2SC710 C 2SC7 SC-43
Abstract: CMOS SWITCHES & MUL TIPLEXERS 5-31 AD9300â'"SPECIFICATIONS ELECTRICAL CHARACTERISTICS(± V S = ±1ZV , connected to the base of a bipolar transistor. If Channel 1 is selected, a current switch is closed and routes current through the input transistor for Channel 1. If Channel 2 is then selected by the digital , causes current to be routed away from the Channel 1 transistor and into the Channel 2 input transistor , transistor will carry current and pass the selected analog input. REV. A Figure 1. Input and Output -
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MIL-STD-883 AD9300K AD9300TQ IL-STD883 AD9300TE A09300

TA7245BP

Abstract: 450T0 SIQNAL INPUT O-i -' ' n i * yS ' a \ - o VCC = 1ZV CW/CCW SELECTOR SW O- MAr-O SV , standard values to the output transistor when supply voltage is at high level (Vcc=18V or above). It is , FOR RELIABILITY DESIGN Do not into the output transistor inside IC into the high voltage and current , transistor maybe destructed by charging/dis-charging current of this capacitor in some cases). If it becomes , and connecting method of the output capacitor, the output transistor inside XC may be destructed in
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TA7245BP 450T0 TA7245BP/BP TA7245BP/CP DIP-14F 5D14BP-P TA7245CP

CA3028A

Abstract: AN5337 ca3028 25°C, 1 *1 0 0MHz * DIFFERENTIAL AMP JFl =R(:oi^ FU31 RAT10» TA «+25 - * C C * +1ZV u , ) DIFFERENTIAL AMPLIFIER CONFIGURATION Ta > +25°C, Vcc * +9V lc OF EACH TRANSISTOR . 2.2mA 30 40 50 60 , AMPURER CONFIGURATION TA «+25°C, Vcc » +8V lc OF EACH TRANSISTOR * 2.2mA 8 1 if3 0 8ô g , lc OF EACH TRANSISTOR = 2.2mA, Vcc a +*V £ 2 I 1 ui i g 0.6 1 IE 1.5 O
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CA3028A AN5337 ca3028 CA3053M transistor hh 004 transistor hh 004 circuits diagram CA3028 CA3053 120MH CA3028B CA3028AE

AN5337 ca3028

Abstract: CA3028 ) > 7 VCC -1 2 V , V^gc = 9V VCc =12V,VAg c =12V V cc * 9V V c c *1ZV V c c -6 V , VEE = -6V V cc = 12V , (Continued) DIFFERENTIAL AMPLIFIER CONFIGURATION Ta * 25°C, Vcc = +9V lc OF EACH TRANSISTOR a 2.2mA CA , AMPLIFIER CONFIGURATION, lc OF EACH TRANSISTOR = 2.2mA, Vcc s +9V E ' -'OS tu o ! f r * DIFFERENTIAL
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3028B CA3053E AN5337 CA30288 ca3028a equivalent CA302BA AN5337 equivalent A3028B CA3028AM CA3028AM96 CA3028BE CA3028BM

SW-06

Abstract: SW-06B °C LEAKAGE CURRENT vs Vanalog FOR 'DIOFFI VS- m FO" IsiOFFI. VD-1ZV V+ = 28V Vâ'"OV GND-OV U Ta , available from similar CMOS input analog switches. The PNP transistor inputs require such low input current
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SW-06 SW-06B SW06BQ SW06GP SW06FQ SW06GS LF-11333/ 16-PIN RC/883 20-CONTACT
Abstract: the LTC1439 controls an external PNP transistor for operation up to 500mA. A precise internal AUX FB -
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LTC1438/LTC1439 1438/LTC1439 LTC1159 1375/LT1376 LTC1430 LTC1435

3915N

Abstract: LM 3915 IC Expandable to displays of 90 dB Internal voltage reference from 1.2V to 1ZV O perates with single supply of , , independent of output voltage and processing variables, as long as the transistor is not saturat ed Mode , 600 mV below V l e d - This forces the o utp ut o f C2 low, w hich shuts o ff output transistor Q2
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3915N LM 3915 IC moving display for leds lm3915 vu meter LF351 APPLICATION pj 1189 diode LM3915

500w FM power amplifier circuit diagram

Abstract: MT720 CT 5Vref 1ZV,n OPCRRTIOn Basic Control Loop (Refer to Functional Block Diagram) The LT1339 , TECHNOLOGY 17 Go Go O 48V to 1.8V 2-Transistor Synchronous Forward Converter o o O 3 I/i
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MT720 500w FM power amplifier circuit diagram lt1339 Synchronous dc buck converter mt619 MT619 77439-A7 LT1158 LT1160 LT1162
Abstract: = 120H z COM Iâ'™ Source C urren t COM P Sink C u rren t V COMP = 3V/ VVFB = 1-1V V oomp = 1-ZV , sin g an N P N transistor (Q l), a sm all coupling capacitor (CC) a n d a second resistor (RR). The N P N transistor collector is connected either to the external 5V su p p ly or to the IC 's 5V -
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CS-5127 CS-5127DW16 CS-5127DWR16

IAO5 Sharp

Abstract: free transistor equivalent book 2sc between transistor case and heat sink under the fastening screw /?thS10 K/W Maximum ratings ACY 23, ACY , ) Rg = 500 fi; /= 1 kHz 101 ACY33 PNP Transistor for AF-driver and power stages The ACY33 is a germanium PNP alloyed transistor in a case 1 A3 DIN 41871 (similar TO â'"1). All leads are electrically , mounting the transistor on a chassis, mounting flange (heat sink) Q 62901 â'" B1 is available. This part , approx. 1 g Dimensions in mm With careful mounting, thermal resistance between transistor case and heat
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IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Q60103- ACY32

LM373

Abstract: MC1303L . . LM3018/LM3018A Matched Monolithic Transistor A rra y s , . LM3026 Transistor A r r a y , . LM3045 Transistor A r r a y . LM3046 Transistor A r r a y . LM3054 Transistor A r r a y
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LM373 MC1303L LM566 "direct replacement" MFC6030 transistor BD 540 LYS LM566 equivalent 32S9758 356621S 92-OBRO-5610 92260-F 25956F HX3866

70H40

Abstract: 2SC734 equivalent 2SK 389 2SJ109 â'" - 2SK389 2SJ109 13 320/270 BUILT IN RESISTOR TRANSISTOR , * 3 * 1 * 4 * 3 PN P NPN 14 * 5 * 2 TRANSISTOR/FET FOR TV TUNER Package , 2SC3124 OSC Bipolar 2SC4251 2SC4255 2SC4252 2SC2349 15 TRANSISTOR/FET FOR A M /F M , 2SC2712 Bipolar 16 2SC4116 TRANSISTOR FOR VHF/UHF Package TO-92 (SC-43) Super-Mini (SOT , 302 % % ♦ % % * % 18 TO-92 PACKAGE SERIERS TO-92 Type
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70H40 2SC734 equivalent 3sk73 equivalent transistor equivalent d2012 2sc2075 equivalent 2sa970 BL equivalent 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual IC IA N S O VE R SE A S: KBrhS^jH&KS (New Transistor Manual) lists all the transistors registered
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thyristor TAG 8506 nais inverter vf 7f operation manual Sprague 513D sprague 926c capacitor b 222k 1kv shm Sprague 195P 11PM104