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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

1Zv transistor

Catalog Datasheet MFG & Type PDF Document Tags

BCY78X

Abstract: BCY79 to the base in forward direction, however, does not suffice to control a silicon transistor (e.g. when the transistor base is driven by the collector of a preceding transistor in such a way that it is reversed, lies between base and emitter but the saturation voltage of the transistor driven earlier is , /jfe=40; 7air,b = parameter BCY 78, BCY 79 1.ZV Collector-emitter saturation voltage VCEs,t = f(Ic , 4- 1 i I I 1 0 0.Z 0.1» 0.6 0.8 1.0 1.ZV
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BCY77

Abstract: BCY79 to the base in forward direction, however, does not suffice to control a silicon transistor (e.g. when the transistor base is driven by the collector of a preceding transistor in such a way that it is reversed, lies between base and emitter but the saturation voltage of the transistor driven earlier is , /jfe=40; 7air,b = parameter BCY 78, BCY 79 1.ZV Collector-emitter saturation voltage VCEs,t = f(Ic , 4- 1 i I I 1 0 0.Z 0.1» 0.6 0.8 1.0 1.ZV
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021B2

Abstract: transistor cbj PNP-Mesatransistor für HF-Anwendungen AFY 16 bis 900 MHz AFY 16 ist ein PNP-Germanium-Transistor in Mesa-Technik iim Gehäuse 18 A 4 DIN 41 876 (TO-72). Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor AFY 16 ist für die Verwendung in Vorstufen sowie in Misch- und Oszillatorstufen bis 900 MHz geeignet. Typ Bestellnummer AFY 16 Q60106-Y16 Grenzdaten , -% = 1ZV / / 8V I/ S
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021B2 transistor cbj hmv12 15bis pnp germanium transistor AFY16 B63310-K1-A12

2SA1256

Abstract: 5P J TRANSISTOR MARKING Ordering number:EN1056C": No.l056C i _2SA1256 PNP Epitaxial Planar Silicon Transistor High-Frequency Amp Applications Applications â'¢ Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. Features â  High fT (230MHz typ), and small Cre (l.lpF typ). â'¢ Small NF (2.5dBtyp). Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage vcbo -30 V , _ V CE- - 1ZV bV - 3 V
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5P J TRANSISTOR MARKING 230MH 100MH

ANI 1015

Abstract: t3hs SANYO SEMICONDUCTOR CORP SHE D 7=H707b QQObTlS T 2SA1688 T-3HS 2059 PNP Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp Applications ©2798 Applications â'¢ Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers Features â'¢ High power gain : PG , ) Collector to Emitter Voltage,VCB - V hfE - lc vc -1zv -1- , Sanyo surface mount transistor case outlines are illustrated below. ®A11 dimensions are in mm, and
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ANI 1015 t3hs TRANSISTOR SE 135 2SA1688-

2sc710 transistor

Abstract: 2sc710 MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM · AM RADIO HIGH AND MEDIUM , silicon NPN epitaxial type transistor designed for high frequency amplify application. OUTLINE DRAWING , - 3 MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM - AM RADIO HIGH AND , ELECTRIC MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM · AM RADIO HIGH AND , < / Vc 3 6V 1ZV \ b» 0.02 Ê 0.01 K 0.005 Vc 6V 1?V cc UJ 5 < h- 0.05 0* < cc H
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2sc710 transistor transistor 2SC710 2SC710 C 2SC7 SC-43
Abstract: CMOS SWITCHES & MUL TIPLEXERS 5-31 AD9300â'"SPECIFICATIONS ELECTRICAL CHARACTERISTICS(± V S = ±1ZV , connected to the base of a bipolar transistor. If Channel 1 is selected, a current switch is closed and routes current through the input transistor for Channel 1. If Channel 2 is then selected by the digital , causes current to be routed away from the Channel 1 transistor and into the Channel 2 input transistor , transistor will carry current and pass the selected analog input. REV. A Figure 1. Input and Output -
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MIL-STD-883 AD9300K AD9300TQ IL-STD883 AD9300TE A09300

TA7245BP

Abstract: 450T0 SIQNAL INPUT O-i -' ' n i * yS ' a \ - o VCC = 1ZV CW/CCW SELECTOR SW O- MAr-O SV , standard values to the output transistor when supply voltage is at high level (Vcc=18V or above). It is , FOR RELIABILITY DESIGN Do not into the output transistor inside IC into the high voltage and current , transistor maybe destructed by charging/dis-charging current of this capacitor in some cases). If it becomes , and connecting method of the output capacitor, the output transistor inside XC may be destructed in
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TA7245BP 450T0 TA7245BP/BP TA7245BP/CP DIP-14F 5D14BP-P TA7245CP

AN5337 ca3028

Abstract: CA3028A 25°C, 1 *1 0 0MHz * DIFFERENTIAL AMP JFl =R(:oi^ FU31 RAT10» TA «+25 - * C C * +1ZV u , ) DIFFERENTIAL AMPLIFIER CONFIGURATION Ta > +25°C, Vcc * +9V lc OF EACH TRANSISTOR . 2.2mA 30 40 50 60 , AMPURER CONFIGURATION TA «+25°C, Vcc » +8V lc OF EACH TRANSISTOR * 2.2mA 8 1 if3 0 8ô g , lc OF EACH TRANSISTOR = 2.2mA, Vcc a +*V £ 2 I 1 ui i g 0.6 1 IE 1.5 O
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CA3028A AN5337 ca3028 CA3053M transistor hh 004 transistor hh 004 circuits diagram CA3028 CA3053 120MH CA3028B CA3028AE

AN5337 ca3028

Abstract: CA3028 ) > 7 VCC -1 2 V , V^gc = 9V VCc =12V,VAg c =12V V cc * 9V V c c *1ZV V c c -6 V , VEE = -6V V cc = 12V , (Continued) DIFFERENTIAL AMPLIFIER CONFIGURATION Ta * 25°C, Vcc = +9V lc OF EACH TRANSISTOR a 2.2mA CA , AMPLIFIER CONFIGURATION, lc OF EACH TRANSISTOR = 2.2mA, Vcc s +9V E ' -'OS tu o ! f r * DIFFERENTIAL
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3028B CA3053E AN5337 CA30288 ca3028a equivalent CA302BA AN5337 equivalent A3028B CA3028AM CA3028AM96 CA3028BE CA3028BM

SW-06

Abstract: SW-06B °C LEAKAGE CURRENT vs Vanalog FOR 'DIOFFI VS- m FO" IsiOFFI. VD-1ZV V+ = 28V Vâ'"OV GND-OV U Ta , available from similar CMOS input analog switches. The PNP transistor inputs require such low input current
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SW-06 SW-06B SW06BQ SW06GP SW06FQ SW06GS LF-11333/ 16-PIN RC/883 20-CONTACT
Abstract: the LTC1439 controls an external PNP transistor for operation up to 500mA. A precise internal AUX FB -
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LTC1438/LTC1439 1438/LTC1439 LTC1159 1375/LT1376 LTC1430 LTC1435

3915N

Abstract: LM 3915 IC Expandable to displays of 90 dB Internal voltage reference from 1.2V to 1ZV O perates with single supply of , , independent of output voltage and processing variables, as long as the transistor is not saturat ed Mode , 600 mV below V l e d - This forces the o utp ut o f C2 low, w hich shuts o ff output transistor Q2
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3915N LM 3915 IC moving display for leds lm3915 vu meter LF351 APPLICATION pj 1189 diode LM3915

500w FM power amplifier circuit diagram

Abstract: MT720 CT 5Vref 1ZV,n OPCRRTIOn Basic Control Loop (Refer to Functional Block Diagram) The LT1339 , TECHNOLOGY 17 Go Go O 48V to 1.8V 2-Transistor Synchronous Forward Converter o o O 3 I/i
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MT720 500w FM power amplifier circuit diagram lt1339 Synchronous dc buck converter mt619 MT619 77439-A7 LT1158 LT1160 LT1162
Abstract: = 120H z COM Iâ'™ Source C urren t COM P Sink C u rren t V COMP = 3V/ VVFB = 1-1V V oomp = 1-ZV , sin g an N P N transistor (Q l), a sm all coupling capacitor (CC) a n d a second resistor (RR). The N P N transistor collector is connected either to the external 5V su p p ly or to the IC 's 5V -
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CS-5127 CS-5127DW16 CS-5127DWR16

IAO5 Sharp

Abstract: free transistor equivalent book 2sc between transistor case and heat sink under the fastening screw /?thS10 K/W Maximum ratings ACY 23, ACY , ) Rg = 500 fi; /= 1 kHz 101 ACY33 PNP Transistor for AF-driver and power stages The ACY33 is a germanium PNP alloyed transistor in a case 1 A3 DIN 41871 (similar TO â'"1). All leads are electrically , mounting the transistor on a chassis, mounting flange (heat sink) Q 62901 â'" B1 is available. This part , approx. 1 g Dimensions in mm With careful mounting, thermal resistance between transistor case and heat
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IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Q60103- ACY32

LM373

Abstract: MC1303L . . LM3018/LM3018A Matched Monolithic Transistor A rra y s , . LM3026 Transistor A r r a y , . LM3045 Transistor A r r a y . LM3046 Transistor A r r a y . LM3054 Transistor A r r a y
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LM373 MC1303L LM566 "direct replacement" MFC6030 transistor BD 540 LYS LM566 equivalent 32S9758 356621S 92-OBRO-5610 92260-F 25956F HX3866

70H40

Abstract: 2SC734 equivalent 2SK 389 2SJ109 â'" - 2SK389 2SJ109 13 320/270 BUILT IN RESISTOR TRANSISTOR , * 3 * 1 * 4 * 3 PN P NPN 14 * 5 * 2 TRANSISTOR/FET FOR TV TUNER Package , 2SC3124 OSC Bipolar 2SC4251 2SC4255 2SC4252 2SC2349 15 TRANSISTOR/FET FOR A M /F M , 2SC2712 Bipolar 16 2SC4116 TRANSISTOR FOR VHF/UHF Package TO-92 (SC-43) Super-Mini (SOT , 302 % % ♦ % % * % 18 TO-92 PACKAGE SERIERS TO-92 Type
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70H40 2SC734 equivalent 3sk73 equivalent transistor equivalent d2012 2sc2075 equivalent 2sa970 BL equivalent 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual IC IA N S O VE R SE A S: KBrhS^jH&KS (New Transistor Manual) lists all the transistors registered
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thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P Sprague 513D optek A400 817 smd transistor 6c5 11PM104