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Abstract: M115 430 Fig. D9 1UI200¿P 1?0 1200 1200 1200* 200 1400 100 200 5.0 3.0 15.0 2.0 M114 430 Fig. D9 ... OCR Scan
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1 pages,
161.48 Kb

M210 2di50z application 6DI15MS-050 6di20ms 6di20ms050 Bipolar switching transistor VCBO M106 M106 TRANSISTOR M115 M117 1DI400MN-050 6DI20MS-050 6di15s 6DI15S-050 2DI50Z 2DI7RZ-140 2DI50Z abstract
datasheet frame
Abstract: 0013D35 0013D35 245 â-  HIT4 SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER â-  FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. • No Secondary-Breakdown. • Wide Area of Safe Operation. • Infinite VSWR. • No Thermal Runaway. • Simple Bias Circuitry. â-  ABSOLUTE MAXIMUM RATINGS (T.=25 °C) HITACHI/(OPTOELECTRONICS) blE D â- ffir- 1. Source 2. Source 3. Source 4.Source 5. Drain 6. Gate (Dimension* in mm) (RFPAK-A) Item Symbol Rating Unit Drain-Source ... OCR Scan
datasheet

2 pages,
73.13 Kb

2SK318 0013D35 0013D35 abstract
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