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Part : 1SV276(TPH3) Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 1,671 Best Price : - Price Each : -
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1SV276 Datasheet

Part Manufacturer Description PDF Type
1SV276 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original
1SV276 Toshiba variable capacitance diode Original
1SV276 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original
1SV276 Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) Scan
1SV276 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan
1SV276 Toshiba Variable capacitance silicon diode using as VCO for UHF band radio Scan
1SV276TPH3 Toshiba 1SV276TPH3 - Diode VAR Cap Single 10V 15pF 2-Pin USC T/R Original
1SV276(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) T/R Scan
1SV276TPH3F Toshiba 1SV276 - Varactor Diodes 10V C1=15-17pF Original

1SV276

Catalog Datasheet MFG & Type PDF Document Tags

02 diode R-1

Abstract: 1SV276 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , Marking 1 2003-04-02 (Note) 1SV276 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2003-04-02 1SV276 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original
02 diode R-1

1SV276

Abstract: 1SV276 1SV276 UHF VCO : mm · : C1V/C4V = 2.0 () · : rs = 0.22 () · 2 (Ta = 25°C) VR 10 V Tj 125 °C Tstg -55~125 °C : (//) (/ ) ( ) ( ) JEDEC , TL 1 2007-11-01 1SV276 CV - VR IR - V R 30 100 f = 1 MHz Ta = 25°C 10 60 , 1SV276 · · · · "" · · · ·
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Original
Abstract: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 â"¦ (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range JEDEC â'• JEITA â'• TOSHIBA Toshiba
Original

1SV276

Abstract: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , V, f = 470 MHz Marking 1 2003-04-02 (Note) 1SV276 Note: d C = 2 C (Ta) - C (25) ´ 100 (%) C (25) 2003-04-02 1SV276 RESTRICTIONS ON PRODUCT USE 000707EAA ·
Toshiba
Original

1SV276

Abstract: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV276 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV276 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original

1SV276

Abstract: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV276 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV276 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and
Toshiba
Original

1SV276

Abstract: 300E TOSHIBA 1SV276 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 6 VCO FOR UHF BAND RADIO Unit in mm â'¢ High Capacitance Ratio : Civ/C4v = 2.0 (Typ.) â'¢ Low Series Resistance : rs = 0.220 (Typ.) â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING , information contained herein is subject to change without notice. 2000-03-08 1/3 TOSHIBA 1SV276 Cy - Vr , -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (°C) 2000-03-08 2/3 TOSHIBA 1SV276 SPICE PARAMETER
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OCR Scan
300E 470MH 961001EAA2
Abstract: TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO 1 SV2 7 6 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · High Capacitance Ratio : C iv /C 4 v = 2.0 (Typ.) Low Series Resistance : rs = 0.220 (Typ.) Small Package SYMBOL VR Tj Tstg RATING 10 125 -5 5 -1 2 5 , /3 - TO SH IBA 1SV276 Cy - Vr IR - Vr > o w ü o o g á < Z; 0 1 , REVERSE VOLTAGE Vr (V) 2000 09-11 2/3 - TO SH IBA 1SV276 SPICE PARAMETER SPICE -
OCR Scan
000707EAA2
Abstract: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO â'¢ â'¢ â'¢ SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 (Typ.) Low Series Resistance : rs = 0.22H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range , 1SV276 TO SHIBA Cy - Vr rs - V r REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 1997 -
OCR Scan

marking 16

Abstract: 1SV276 VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE · · · High C apacitance Ratio : C j V ''C 4 V = 2.0 (Typ.) Low Series R esistance : r s = 0.22Sl (Typ.) Sm all Package CHARACTERISTIC Reverse Voltage J un ction T em p eratu re Storage T em p era tu re Range SYMBOL Vr Ti TstB RATING 10 125 -5 5 -1 25 UNIT V °C °C M A X IM U M RATINGS (Ta = 25°C) ELECTRICAL , RESISTANTE rs til) 1SV276
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OCR Scan
marking 16
Abstract: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO 1 SV2 7 6 SILICON EPITAXIAL PLANAR TYPE Unit in mm · High Capacitance Ratio : C iy /C 4y = 2.0 (Typ.) · Low Series Resistance : rs = 0.220 (Typ.) · Small Package 0 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj T stg RATING 10 , ithout notice. 241 TO SHIBA 1SV276 Cv - vr rs - VR REVERSE VOLTAGE V r -
OCR Scan
Abstract: TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO 1 SV2 7 6 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · High Capacitance Ratio : C iv /C 4v = 2.0 (Typ.) Low Series Resistance : rs = 0.22H (Typ.) Small Package SYMBOL VR Tj T stg M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range RATING , contained herein is subject to change w ith o u t notice. 1997- 05-08 1/2 TO SHIBA 1SV276 Cy -
OCR Scan

1SV276

Abstract: TOSHIBA 1SV276 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 6 VCO FOR UHF BAND RADIO Unit in mm â'¢ High Capacitance Ratio : Civ/C4v = 2.0 (Typ.) â'¢ Low Series Resistance : rs = 0.220 (Typ.) â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55-125 , The information contained herein is subject to change without notice. 2001-02-26 1/2 TOSHIBA 1SV276
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OCR Scan

1SV276

Abstract: TOSHIBA 1SV276 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 6 VCO FOR UHF BAND RADIO Unit in mm â'¢ High Capacitance Ratio : Ciy/C4Y = 2.0 (Typ.) â'¢ Low Series Resistance : rs = 0.220 (Typ.) â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55-125 °C +0.2 , TOSHIBA 1SV276 Cy - Vr rs - Vr f= 1MHz Ta = 25Â
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OCR Scan
Abstract: T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO 1 S V2 7 6 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · High Capacitance Ratio : C iy /C 4 v = 2.0 (Typ.) Low Series Resistance : r$ = 0.22il (Typ.) Small Package SYMBOL Vr Ti _ Zk? _ RATING 10 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature , T O SH IB A 1SV276 Cv - VR rs - Vr REVERSE VOLTAGE V r (V) REVERSE VOLTAGE V r (V -
OCR Scan

marking tl

Abstract: diode marking tl Diodes SMD Type Silicon Epitaxial Planar Diode 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Junction Temperature Value Unit VR Reverse Voltage 10 V Tj 125 T stg Storage Temperature Range -55 to +125
Kexin
Original
marking tl diode marking tl diode smd marking 22
Abstract: Product specification 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Junction Temperature Value Unit VR Reverse Voltage 10 V Tj 125 T stg Storage Temperature Range -55 to +125 Electrical C TY Semiconductor
Original

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 218 HN2V02H 2V02H 296 1SV276 TL 220 JDH2S01T S.2 299 1SV277 TO 222 , 1SV279 1SV230 1SV286 1SV239 1SV280 1SV245 1SV309 1SV270 1SV281 1SV276 , 1 1.85~2.35 4 2.0 0.42 1 470 ESC 1SV276 VHF Tuning (CATV , ) 1SV322/1SV323 for L Band VCO 1SV276/1SV284 5 1SV304/1SV305 1SV270/1SV281 1SV310/1SV311 3 , fSC 1SV229 1SV270 1SV276 1SV304 1SV310 1SV279 1SV281 1SV284 1SV305 1SV311 JDV2S06S
Toshiba
Original
2SC386A 3SK73 3SK78 3SK101 3SK114 3SK121 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SK1310 2sc5066 050106DAD1 1SS154 2SC382TM 2SC2114 2SK2497 2SC384

JDV2S31CT

Abstract: 2SK1875 * Dual VCO Varicap diode USC ESC 1SV229 1SV270 1SV276 1SV304 1SV310 , JDP2S02ACT JDP2S05CT JDP2S02AFS 5.8 GHz 1SV214 1SV229 1SV276 1SV304 1SV310 SC2 JDV2S05FS , JDP2S05FS JDP2S02ACT JDP2S05CT 1SV214 1SV229 1SV276 1SV304 1SV278B 1SV279 1SV284 1SV305 , 1SV279* - JDV2S41FS* - 1SV270 1SV281* - - - 1SV276 1SV284* - , JDV2S41FS* VHF/UHF VCO fSC 1SV270 USC 1SV281 1SV276 1SV284 1SV239 10 10 3 3 10
Toshiba
Original
JDV2S31CT 2SK1875 1SV283B 1SV271 antenna CDMA GPRS 2SK3078 CST16 BCJ0003F BCJ0003E

1SV276

Abstract: 20010110 1SV276 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS(A) ,RS() ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V 4 V Ta = -40 85 AMBIENT TEMPERATURE: PARAMETER IS = 7.55E-16 N = 1.011 BV = 10 IBV = 1.00E-04 RS = 0.22 CJ0 = 2.485E-11 VJ = 1.2 M = 0.7732 XTI = 2.86 -Ls = 1.00E-09 VARICAP Note 1: These
Toshiba
Original
00E-09

SV153A

Abstract: Sv153 *2SC5066 * 2SC5086 2SC5108 *2 SC 5 1 11 1SV229 * 1SV270 * 1SV276 1SV257 * 1SV273 - Tuning - * NEW
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OCR Scan
2SC491 4007F 1SV103 SK192A SV153A Sv153 varicap diode 1SV226 2SC2670 2SC2715 2SC2716 1SV128 1SV172 1SV252
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