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1SV270TPH3F Toshiba America Electronic Components Varactor Diodes 10V C1=15-17pF visit Digikey Buy

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1SV270 Datasheet

Part Manufacturer Description PDF Type
1SV270 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original
1SV270 Toshiba variable capacitance diode Original
1SV270 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original
1SV270 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SV270 N/A Shortform Data and Cross References (Misc Datasheets) Scan
1SV270 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan
1SV270 Toshiba Variable capacitance silicon diode using as VCO for UHF band radio Scan
1SV270 Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) Scan
1SV270TPH3 Toshiba 1SV270TPH3 - Diode VAR Cap Single 10V 15pF 2-Pin USC T/R Original
1SV270(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) T/R Scan
1SV270TPH3F Toshiba 1SV270 - Varactor Diodes 10V C1=15-17pF Original

1SV270

Catalog Datasheet MFG & Type PDF Document Tags

1SV270

Abstract: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , V, f = 470 MHz Marking 1 2003-04-02 (Note) 1SV270 Note: d C = 2 C (Ta) - C (25) ´ 100 (%) C (25) 2003-04-02 1SV270 RESTRICTIONS ON PRODUCT USE 000707EAA ·
Toshiba
Original

1SV270

Abstract: DIODE T6 marking 1SV270 SILICON EPITAXIAL PLANAR DIODE VARIABLE CAPACITANCE DIODE Features · High capacitance ratio · Small package · Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T6 Applications · VCO for UHF band radio Absolute Maximum Ratings (Ta = 25 OC , Code: 724) Dated : 01/09/2006 1SV270 CV - VR Reverse Current IR (A) 10 5 3 12 , Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SV270 PACKAGE OUTLINE Plastic
Semtech Electronics
Original
DIODE T6 marking 470MH

1SV270

Abstract: 470MHZ 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN 1 FEATURES High capacitance ratio: C1V/C4V = 2.0 (Typ.) Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28 (Typ.) Top View Marking Code , ) ® Dated : 30/08/2004 1SV270 CV - VR Reverse Current IR (A) 10 5 3 0 4 12 , , Stock Code: 724) ® Dated : 30/08/2004 1SV270 PACKAGE OUTLINE SOD-323 A UNIT mm A
Semtech Electronics
Original
470MHZ

1SV270

Abstract: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 VCO FOR UHF BAND RADIO Unit in mm â'¢ High Capacitance Ratio â'¢ Low Series Resistance â'¢ Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.280 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55-125 °C JEDEC_â , subject to change without notice. 1997-05-08 1/2 TOSHIBA 1SV270 Cy - Vr IR - Vr f= 1MHz Ta = 25Â
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OCR Scan
961001EAA2

1SV270

Abstract: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , Marking 1 2003-04-02 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2003-04-02 1SV270 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original

1SV270

Abstract: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV270 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original

LS 1017

Abstract: MARKING EE TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 0 VCO FOR UHF BAND RADIO â'¢ High Capacitance Ratio â'¢ Low Series Resistance â'¢ Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.28à (Typ.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS , /3 TOSHIBA 1SV270 Cy - Vr Ir - Vr f= 1MHz Ta = 25 , °C / / / 0L 100 300 500 1000 2000 FREQUENCY f (MHz) 2000-09-11 2/3 TOSHIBA 1SV270 SPICE PARAMETER
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OCR Scan
LS 1017 MARKING EE 303E 27c diode toshiba 000707EAA2

C2580

Abstract: 1SV270 1SV270 1SV270 UHF VCO : mm · : C1V/C4V = 2.0 () · : rs = 0.28 () · (Ta = 25°C) VR 10 V Tj 125 °C Tstg -55~125 °C : JEDEC (//) (/ JEITA , rs C1V/C4V VR = 1 V, f = 470 MHz pF TF 1 2007-11-01 1SV270 CV - VR , ) × 100 (%) C (25) 80 (°C) 2 2007-11-01 1SV270 · · ·
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Original
C2580

1SV270

Abstract: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV270 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and
Toshiba
Original

1SV270

Abstract: 470MHZ 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN 1 FEATURES High capacitance ratio: C1V/C4V = 2.0 (Typ.) Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28 (Typ.) Top View Marking Code , ) Dated : 30/08/2004 1SV270 CV - VR Reverse Current IR (A) 10 5 3 0 4 12 , Code: 724) Dated : 30/08/2004 1SV270 PACKAGE OUTLINE SOD-323 A UNIT mm A b c
Semtech Electronics
Original
Abstract: TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 1 SV270 VCO FOR UHF BAND RADIO U n it in mm · · · High Capacitance Ratio Low Series Resistance Small Package : C1V/C4V = 2.0 (Typ.) : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 10 , to change w ith o u t notice. # # 1997-05-08 1/2 TO SHIBA 1SV270 Cy - Vr IR -
OCR Scan

1SV270

Abstract: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 0 VCO FOR UHF BAND RADIO â'¢ High Capacitance Ratio â'¢ Low Series Resistance â'¢ Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.28à (Typ.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction , /2 TOSHIBA 1SV270 Cy - Vr Ir - Vr f= 1MHz Ta = 25Â
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OCR Scan
Abstract: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 1 , subject to change without notice. 1997 05-08 - 1/2 TOSHIBA 1SV270 Cv - Vr lOOp IR -
OCR Scan
Abstract: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV270 VCO FOR UHF BAND RADIO 1 SV270 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · High Capacitance Ratio Low Series Resistance Small Package : C1V/C4V = 2.0(Typ.) : rs = 0.28Ü (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , 1SV270 C y - Vr Ir - VR > o w ü Z; o < o g á REVERSE VOLTAGE Vr (V) rs - , wo ¡5 g O < o AMBIENT TEMPERATURE Ta (°C) 200 0 - 02-29 2/3 TOSHIBA 1SV270 -
OCR Scan
Abstract: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV270 VCO FOR UHF BAND RADIO 1 SV270 SILICON EPITAXIAL PLANAR TYPE U n i t in m m · High Capacitance Ratio · Low Series Resistance · Small Package : C1V/C4V = 2.0(Typ.) : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr Tj Tstg RATING 10 , h o u t n o tic e . 237 TOSHIBA 1SV270 Cv - vr Ir - VR o ü > w O < o -
OCR Scan
Abstract: Product specification 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range Electrical C TY Semiconductor
Original

1SV270

Abstract: LS 1017 1SV270 SPICE PARAMETER 20010110 SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS(A) ,RS() ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz3 GHz VR = 1V 4V REVERSE VOLTAGE RANGE: AMBIENT TEMPERATURE: Ta = 27 PARAMETER IS = 6.929E-16 N = 1.017 BV = 10 IBV = 1.00E-04 RS = 0.28 CJ0 = 2.303E-11 VJ = 2.637 M = 1.181 -Ls = 1.00E-09 VARICAP Note 1: These parameters show all die
Toshiba
Original
00E-09

marking tf

Abstract: 1SV270 Diodes SMD Type Silicon Epitaxial Planar Diode 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range
Kexin
Original
marking tf
Abstract: 1SV270 VCO FOR UHF B A N D R A D IO SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE Unit in mm : C IV /C 4 V = 2.0 (Typ.) : rs = 0.281 1 (Typ.) I 0 L' I Li!) Il l · · · High Capacitance Ratio Low Series Resistance Small Package jX -> ` « M A X IM U M R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Tem perature Storage Tem perature Range SYMBOL Vr Tj TstB RATING 10 125 -55 -1 2 5 UNIT V °C °C JEDEC E1AJ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta = -
OCR Scan

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 214 HN1V01H 1V01H 290 1SV270 TF 216 HN1V02H 1V02H 293 1SV271 TG , 1SV279 1SV230 1SV286 1SV239 1SV280 1SV245 1SV309 1SV270 1SV281 1SV276 , 1SV280 15 3 15 3.8~4.7 2 1.5~2.0 10 2.0 0.44 1 470 ESC 1SV270 , ) 1SV322/1SV323 for L Band VCO 1SV276/1SV284 5 1SV304/1SV305 1SV270/1SV281 1SV310/1SV311 3 , fSC 1SV229 1SV270 1SV276 1SV304 1SV310 1SV279 1SV281 1SV284 1SV305 1SV311 JDV2S06S
Toshiba
Original
2SC386A 3SK73 3SK78 3SK101 3SK114 3SK121 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SK1310 2sc5066 050106DAD1 1SS154 2SC382TM 2SC2114 2SK2497 2SC384

JDV2S31CT

Abstract: 2SK1875 * Dual VCO Varicap diode USC ESC 1SV229 1SV270 1SV276 1SV304 1SV310 , 1SV279* - JDV2S41FS* - 1SV270 1SV281* - - - 1SV276 1SV284* - , JDV2S41FS* VHF/UHF VCO fSC 1SV270 USC 1SV281 1SV276 1SV284 1SV239 10 10 3 3 10
Toshiba
Original
JDV2S31CT 2SK1875 1SV283B antenna CDMA GPRS 2SK3078 2sk3476 CST16 BCJ0003F BCJ0003E
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