1SS84 ADE-208-151A DO-35 SC-48

Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-151A (Z) Rev. 1 Aug. 1995 Features · Low reverse current.

1SS84 1SS84 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-151A ADE-208-151A (Z) Rev. 1 Aug. 1995 Features · Low reverse current. · High reliability with glass seal. Ordering Information Type No. Cathode band 2nd band 3rd band Package Code 1SS84 1SS84 Light Blue Dark Green Dark Green DO-35 DO-35 Outline 2 1 3rd band 2nd band Cathode band 1. Cathode 2. Anode 1SS84 1SS84 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 75 V Reverse voltage VR 70 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM* 1 A Average forward current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg 65 to +175 °C Note: Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF - - 0.8 V IF = 10mA Reverse current IR1 - 0.3 3 nA VR = 0.3V IR2 - - 10 VR = 20V IR3 - - 100 VR = 55V Capacitance C - - 5 pF VR = 1V, f = 1MHz Reverse recovery time trr - - 50 ns IF = IR = 10mA, Irr = 1mA, RL = 100 2 1SS84 1SS84 1 10 2 Ta =1 25 °C =7 5°C Ta =2 5°C Ta = 25° C 3 10 4 Ta Forward current I F (A) 10 10 5 10 6 10 0 0.6 0.2 0.8 0.4 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage 5 10 Ta = 125°C 6 Reverse current I R (A) 10 Ta = 75°C 7 10 10 8 Ta = 25°C 9 10 Ta = 0 °C 10 10 0 60 20 40 80 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage 3 1SS84 1SS84 f = 1MHz Capacitance C (pF) 10 1.0 1 10 1.0 10 Reverse voltage VR (V) 2 10 Fig.3 Capacitance Vs. Reverse voltage Package Dimensions Unit: mm 4.2 Max 26.0 Min 1 0.5 2.0 Max 26.0 Min 2 3rd band (Dark Green) 2nd band (Dark Green) Cathode band (Light Blue) 1 Cathode 2 Anode HITACHI Code DO-35 DO-35 EIAJ Code SC-48 SC-48 Weight (g) 4 DO-35 DO-35 JEDEC Code 0.13