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Part : 1SS83 Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 2,180 Best Price : $0.07 Price Each : $0.09
Part : 1SS83JTA-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 80,000 Best Price : $0.16 Price Each : $0.20
Part : 1SS83RE-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 20,000 Best Price : $0.07 Price Each : $0.09
Part : 1SS83TA-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 211 Best Price : $0.12 Price Each : $0.15
Part : 1SS83TD-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 2,667,321 Best Price : $0.12 Price Each : $0.15
Part : 164-01-SS-832-E Supplier : PROMPTUS Manufacturer : New Advantage Stock : 8 Best Price : - Price Each : -
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1SS83 Datasheet

Part Manufacturer Description PDF Type
1SS83 Hitachi Semiconductor Small Signal Original
1SS83 Hitachi Semiconductor SILICON EPITAXIAL PLANAR DIODE FOR HIGH VOLTAGE SW Original
1SS83 Renesas Technology Original
1SS83 Renesas Technology Silicon Epitaxial Planar Diode for High Voltage Switching Original
1SS83 Hitachi Semiconductor Power Transistors Data Book Scan
1SS83 N/A Basic Transistor and Cross Reference Specification Scan
1SS83 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1SS83 N/A Catalog Scans - Shortform Datasheet Scan
1SS83 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS83 N/A The Diode Data Book with Package Outlines 1993 Scan

1SS83

Catalog Datasheet MFG & Type PDF Document Tags

lm2490

Abstract: IC lm2490 -301 CRTCRTCRT 3kV5kVDSP-301300V · R2: ½ W · D1 D2: 1SS831N4148 VCC · C1: 0.1mF (D1D2) VCC · L1: CRT , SG C1 C2 LM2425 510 1.8mH 220 1SS83 1SS83 DSP-301 0.1µF 1µF LM2423 360 1.8mH 220 1SS83 1SS83 DSP-301 0.1µF 1µF LM2422 300 1.8mH 220 1SS83 1SS83 DSP-301 0.1µF 0.1µF LM2433 TBD LM2432 TBD TBD TBD TBD 1SS83 1SS83 DSP-301 0.1µF TBD 1SS83 1SS83 DSP-301 0.1µF 1µF 1µF 29 © 2004 National , · : DCCRT CRT · R2: ½ W · D1 D2: 1SS831N4148 VCC · C1: 0.1mF (D1D2) VCC · L1: CRT · R1
National Semiconductor
Original
LM2483 lm2490 IC lm2490 LM1228 LM1220 LM1222 CRT - national LM1269- 110MH LM1246- 150MH LM2429- LM2459-

1SS83

Abstract: Hitachi DSA002712 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul. 1995 , Type No. 1SS83 Cathode band Verdure 2nd band Light Blue 3rd band Light Blue Package Code DO-35 Outline 1 3rd band 2nd band Cathode band 2 1. Cathode 2. Anode 1SS83 Absolute Maximum , 100mA VR = 250V VR = 300V VR = 0V, f = 1MHz IF = IR = 30mA, Irr = 3mA, RL = 100 2 1SS83 10 ­1 , voltage 3 1SS83 f = 1MHz 10 Capacitance C (pF) 1.0 10 ­1 1.0 10 Reverse voltage
Hitachi Semiconductor
Original
Hitachi DSA002712 1SS83 DIODE SC-48

diode 1SS83

Abstract: 1SS83 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul , Information Type No. Cathode band 2nd band 3rd band Package Code 1SS83 Verdure Light , . Anode 1SS83 Absolute Maximum Ratings* 2 (Ta = 25°C) Item Symbol Reverse voltage I FM 2 , = 100 2 VR = 300V 1SS83 ­1 ­2 10 10 Ta = 12 Ta = 5°C 75° C Ta = 25 , 1SS83 f = 1MHz Capacitance C (pF) 10 1.0 ­1 10 1.0 10 Reverse voltage VR (V
Hitachi Semiconductor
Original
diode 1SS83 D-85622

1SS83

Abstract: 1Ss83 equivalent ADE-208-150A(Z) 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching Rev. 1 Jul. 1995 Features Outline · High reverse voltage. (VR=250V) · High reliability with glass seal , . Cathode band 2nd band 3rd band Package Code 1SS83 Verdure Light Blue Light Blue DO , =100 1SS83 -1 10 -5 10 Ta=75°C Reverse current I R (A) (A) -6 10 Ta= 125 °C Ta , current Vs. Reverse voltage f=1MHz Capacitance C (pF) -8 102 300 1SS83 Package
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Original
1Ss83 equivalent equivalent diode for diode 1SS83 equivalent diode for 1SS83 DO-35 BLUE CATHODE Hitachi DSA0014

1Ss83 equivalent

Abstract: equivalent diode for 1SS83 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150B (Z) Rev.2 Oct , Information Type No. Cathode band 2nd band 3rd band Package Code 1SS83 Verdure Light , . Anode 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value 1 Unit Peak , = 300 V 1SS83 Main Characteristic -1 -5 10 10 Ta = 75°C Reverse current IR (A , .3 Capacitance Vs. Reverse voltage 3 1SS83 Package Dimensions Unit: mm 4.2 Max 26.0 Min 0.5
Hitachi Semiconductor
Original
Hitachi DSA00340

1SS83

Abstract: GRZZ0002ZB-A 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0563-0300 (Previous: ADE , 1SS83 Verdure Light Blue Light Blue DO-35 Pin Arrangement 1 3rd band 2nd band , Code) GRZZ0002ZB-A (DO-35) 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse , page 2 of 4 Test Condition 1SS83 Main Characteristic 10-5 10-1 Reverse current IR (A , . Reverse voltage Rev.3.00 Apr 18, 2005 page 3 of 4 1SS83 Package Dimensions JEITA Package Code
Renesas Technology
Original
SC-40

glass diode blue band

Abstract: 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-150A (Z) Rev , . Ordering Information Type No. Cathode band 2nd band 3rd band Package Code 1SS83 Verdure , 1. Cathode 2. A node 1SS83 Absolute Maximum Ratings*2 (Ta = 25 °C) Item Symbol Value , 3mA, R. = 100Ã2 1SS83 O 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltag e Vp (V) Fig.l Forward current Vs. Forward voltage HITACHI 3 1SS83 Fig.3 Capacitance Vs. Reverse
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OCR Scan
glass diode blue band

1SS83

Abstract: products contained therein. 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE , 1SS83 Verdure Light Blue Light Blue DO-35 Outline 1 3rd band 2nd band Cathode band 2 1. Cathode 2. Anode 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 100 Rev.2, Oct. 2000, page 2 of 5 VR = 300 V 1SS83 Main Characteristic -1 -5 10 , 1SS83 Package Dimensions Unit: mm 4.2 Max 26.0 Min 0.5 2.0 26.0 Min Hitachi Code
Hitachi Semiconductor
Original

1SS83

Abstract: 1Ss83 equivalent 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150B (Z) Rev.2 Oct , Information Type No. Cathode band 2nd band 3rd band Package Code 1SS83 Verdure Light , . Anode 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage VR Peak , of 5 VR = 300 V 1SS83 Main Characteristic -1 -5 10 10 Ta = 75°C Reverse current , ) Fig.3 Capacitance Vs. Reverse voltage Rev.2, Oct. 2000, page 3 of 5 1SS83 Package Dimensions
Hitachi Semiconductor
Original
DSA003640 HITACHI 1SS83

diode BLUE BAND

Abstract: 1SS83 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI Features · High reverse voltage. (VR=250V) · High reliability with glass seal. 3 -E ADE-208-150A(Z) Rev. 1 Jul. 1995 , band 2nd band Cathode band 1. Cathode 2. Anode 1SS83 Verdure Light Blue Light Blue DO , V VR = 300 V VR = 0 V, f = 1 MHz |p=|R=30mA,lrr=3mA,RL=100Q Vr pF ns 1SS83 10 -5 , Vs. Reverse voltage 1SS83 Package Dimensions Unit: mm 26.0 Mir» JE in o -e- IE
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diode BLUE BAND

1SS83

Abstract: diode BLUE BAND Epitaxial Ptanar Diode for High Voltage Switching Features · High reverse voltage. (VR=250V) · High reliability with glass seal. Outline =C3 1 I-r r1 jf _[ i L -C - - Ill " -2 Ordering Information Typa \ \ ^3rd band ' 2nd band Cathode band 1. Cathode 2. Anode No. Cathode band 2nd band 3rd band Package Code Light , = 1 M H z lp=lR=30m A,lrr=3m A,R|_=10 0 ÌÌ 97 1SS83 < OE c © w 3 h_ Ü C
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1SS83-------------------------S

diode Cathode indicated by blue band

Abstract: 1SS83 . 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0563-0300 (Previous: ADE , 1SS83 Verdure Light Blue Light Blue DO-35 Pin Arrangement 1 3rd band 2nd band , Code) GRZZ0002ZB-A (DO-35) 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse , page 2 of 4 Test Condition 1SS83 Main Characteristic 10-5 10-1 Reverse current IR (A , . Reverse voltage Rev.3.00 Apr 18, 2005 page 3 of 4 1SS83 Package Dimensions JEITA Package Code
Renesas Technology
Original
diode Cathode indicated by blue band
Abstract: developed or manufactured by or for Renesas Electronics. 1SS83 Silicon Epitaxial Planar Diode for High , . Cathode band 2nd band 3rd band Package Name 1SS83 Verdure Light Blue Light Blue DO , 18, 2005 page 1 of 4 Package Code (Previous Code) GRZZ0002ZB-A (DO-35) 1SS83 Absolute , , Irr = 3 mA, RL = 100 â"¦ Rev.3.00 Apr 18, 2005 page 2 of 4 Test Condition 1SS83 Main , page 3 of 4 1SS83 Package Dimensions JEITA Package Code RENESAS Code Previous Code MASS Renesas Technology
Original

1SS83

Abstract: 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Features · High reverse voltage. (VR = 250V) · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 625 mA 2) IFSM 1 A Average forward current IO 200 mA Power dissipation Ptot 400 mW Tj 175 O -65 to +175 O 1) Peak reverse voltage Non-Repetitive
Semtech Electronics
Original

1SS83

Abstract: 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Features · High reverse voltage. (VR = 250V) · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit 1) VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 625 mA 2) IFSM 1 A Average forward current IO 200 mA Power dissipation Ptot 400 mW Tj 175 O -65 to +175 O Peak reverse voltage Non-Repetitive peak
Semtech Electronics
Original

1SS83

Abstract: equivalent diode for 1SS83 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode Max. 0.5 Features · High reverse voltage (VR = 250 V) · High reliability with glass seal Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 300 V Reverse Voltage VR 250 V Average Forward Current IO
Semtech Electronics
Original

1SS83

Abstract: 1Ss83 equivalent 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Features · High reverse voltage. (VR = 250V) · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit 1) VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 625 mA 2) IFSM 1 A Average forward current IO 200 mA Power dissipation Ptot 400 mW Tj 175 O -65 to +175 O Peak reverse voltage Non-Repetitive peak
Semtech Electronics
Original
Abstract: 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Features â'¢ High reverse voltage. (VR = 250V) â'¢ High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit 1) VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 625 mA 2) IFSM 1 A Average forward current IO 200 mA Power dissipation Ptot 400 mW Tj 175 O -65 to +175 O Peak reverse voltage Bytes
Original

1S2588

Abstract: 1S2091 100 0. 2 200 1. 5 3 100 P=400i» 2 4 C 1SS83 BS 300 250 625 200 1 1 100 0. 2 250 1. 5 3 100
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1S2075 1S2076A 1S2091 1S2135 1S2222 1S2348 1S2588 1S2463 1S2473 1SS91 17-TV 1S2092 1S2095A

1S2588

Abstract: ISS83 100 0. 2 200 1. 5 3 100 P=400i» 2 4 C 1SS83 BS 300 250 625 200 1 1 100 0. 2 250 1. 5 3 100
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1S2134 1S2212 ISS83 is2076a is2471 is2076 IS2473 1S213S 1S2460 1S2461 1S2462

1Ss83 equivalent

Abstract: power supply 220v 12v diagram video nodes and reduce parasitic capacitance on the video outputs. The clamp diodes must be 1SS83 or , placed very close to the 1SS83 type arc protection diodes (D1/D2, D4/D7, D8/D9) between VCC and ground
National Semiconductor
Original
LM2485 power supply 220v 12v diagram LM12xx power supply 220v- 12v circuit diagram LM2485NA N24C 20VP-P 40VP-P LM12XX LM242X/3X/5X LM2485N

marking code 62z

Abstract: philips surface mount zener diode v6 1SS81 1SS82 1SS83 1SS86 1SS88 1SS106 1SS119 1SS120 1SS198 1SS270 1SS270A 1SS286 HRB0103A HRB0103B , HSK120 MPAK HSM124S URP HSU119 UFP HSC119 CMPAK HSB124S High DO-35 1SS81 voltage 1SS82 switching 1SS83 , DAP222 1SS353,1SS355 1SS400 PHILIPS 2001.5 HITACHI 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS118 1SS270
Hitachi Semiconductor
Original
marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 HVD141/142 HVD141 HVD142 1S2074 HZM24N HZM10N

iss86

Abstract: 1SS119 * O * > 100 100 100 200 To 10 30 r 0 o Ö DO-35 1SS82 1SS83 HSS81 200 250
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iss86 1SS108 1SS196 1SS199 HSR101 ISS86 1SS165
Abstract: . The clamp diodes must be 1SS83 or equivalent diodes; do not use 1N4148 type diodes. These diodes , 1SS83 type arc protection diodes (D1 / D2, D4/D7, D8/D9) between V cc and ground. The ground -
OCR Scan
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