NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 1SS413 | Toshiba | Diode Silicon Epitaxial Schottky Barrier Type |
3 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: P1001 1SS413 1SS413 · : IR = 0.5 A () · 0.6±0.05 : VF (3) = 0.50 V () : CT = 3.9 pF () 0.07 VRM 25 VR 20 A 0.2 ±0.05 0.1±0.05 V M 0.1 0.8±0.05 (Ta = 25°C) A 0.1 , (top view) Y 1 2007-11-01 1SS413 CT (pF) ( 20x20mm 4x4mm) VR (V) 2 2007-11-01 1SS413 · · · · "" · · · ... | Original |
3 pages, |
1SS413 1SS413 abstract |
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| Abstract: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 SP Top View Marking Code: "SP" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 25 V Reverse Voltage VR 20 V Peak Forward , company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/05/2006 1SS413 ... | Original |
2 pages, |
marking code sp 1ss413 DIODE Sp marking code 1SS413 1SS413 abstract |
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| Abstract: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 25 V Reverse Voltage VR 20 V Peak Forward Current IFM , Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1SS413 PACKAGE OUTLINE Plastic surface ... | Original |
2 pages, |
SOD-523 marking Q 1ss413 1SS413 1SS413 abstract |
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| Abstract: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5A (max) : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating 25 VR 20 IFM 100 mA Average , 2007-11-01 1SS413 P Ta 140 Mounted on a glass epoxy circuit board of 20 x 20mm, pad dimension , 125 150 Ambient temperature Ta (°C) 2 2007-11-01 1SS413 RESTRICTIONS ON PRODUCT USE ... | Original |
3 pages, |
1SS413 11-L1 1-1L1A 1SS413 abstract |
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| Abstract: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5uA (max) : CT = 3.9pF (typ.) 0.07 M A Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating 25 0.2 ±0.05 , View) Unit V Marking Y 1 2004-05-06 1SS413 P Ta 140 Mounted on a glass , (°C) 2004-05-06 1SS413 RESTRICTIONS ON PRODUCT USE 030619EAA 030619EAA · The information ... | Original |
3 pages, |
1SS413 1SS413 abstract |
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| Abstract: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features · · Low reverse current : IR=0.5uA (max.). · DESCRIPTION PIN Low forward voltage : VF(3)=0.50V(typ.). Small total capacitance : CT=3.9pF (typ.). 1 Cathode 2 Anode 2 1 SP Top View Marking Code: "SP" Simplified outline SOD-523 and symbol Absolute Maximum , ) ® Dated : 29/10/2004 1SS413 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ... | Original |
2 pages, |
1SS413 DIODE Sp marking code 1SS413 abstract |
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| Abstract: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5A (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07 M A 1.0±0.05 Low reverse current Small total capacitance 0.1 , 2007-11-01 1SS413 P Ta 140 Mounted on a glass epoxy circuit board of 20 x 20mm, pad dimension , 125 150 Ambient temperature Ta (°C) 2 2007-11-01 1SS413 RESTRICTIONS ON PRODUCT USE ... | Original |
3 pages, |
1SS413 1SS413 abstract |
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| Abstract: 1SS413 1SS420CT 1SS420CT DSR520CT DSR520CT IR 5 DSF05S30U DSF05S30U DSF05S30CTB DSF05S30CTB 10 30 200 0.52 0.6 200 DSF01S30SC DSF01S30SC DSF05S30U DSF05S30U 1SS413 DSR01S30SC DSR01S30SC 1SS416 1SS416 30 30 100 0.37 0.5 10 0.35 10 40 100 0.54 ... | Original |
5 pages, |
TC7WZ00FU 1SS417 1SS421 dsf05s TC7SZ00AFS TC7SZ00F TC7SZ00FE TC7SZ00FU 1SS416CT tc7sz04fe TC7WZ00FK TC7SZ38FU FSV 052 TC7SZ02F DF2S3.6SC BCJ0052E BCJ0052E abstract |
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| Abstract: MG200N1US1 MG15G1AL2 MG8N6ES42 1S1658 MG15G1AL3 TLR103 mg75j2ys40 MG30G1BL2 2sk270a MG15N6ES42 2SK150A mg150n2ys40 mg75n2ys40 401 DF5A8.2LF 487 1SS413 317 DF3A6.8LFE 403 DF5A8.2LFU 489 1SS416 1SS416 319 , 50 100 1SS416 1SS416 1SS418 1SS418 1SS422 1SS422 100 1SS413 IR, 20 IR 10 50 0.63 , (mA) Typ. VR (V) Max * 1SS413 100 20 50 0.5 20 0.55 50 3.9 0 , P* VR IO (mW) (V) (mA) 1SS413 100 20 1SS416 1SS416 100 1SS417 1SS417 100 ... | Original |
154 pages, |
tbf819 2SC4288A toshiba s2530a S2530A TOSHIBA MG150N2YS40 TOSHIBA 2N3055 2N3055 TOSHIBA 050106DAA1 050106DAA1 abstract |
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| Abstract: 1SS395 1SS395 1SS385FV 1SS385FV 1SS385 1SS385 1SS378 1SS378 100 100 1SS372 1SS372 1SS413 1SS405 1SS405 1SS406 1SS406 50 20 ... | Original |
21 pages, |
TPC6K01 CMG02 CMG07 CMS19 CRG01 CRG02 CRG03 CRG07 CRS01 CRS06 SMD USM SCJ0004O JDV2S10FS JDP12L11SC HN2D01JE SCJ0004O abstract |
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| Part | Similar Part | Notes |
| 1SS413 Buy | BAT54KFILM Buy |