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Part : 1SS406(TPH3,F) Supplier : Toshiba Manufacturer : WPG Americas Stock : - Best Price : - Price Each : -
Part : 1SS406(TPH3,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 5,400 Best Price : $1.19 Price Each : $1.36
Part : 1SS406,H3F(T Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,740 Best Price : $0.1340 Price Each : $0.2120
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1SS406 Datasheet

Part Manufacturer Description PDF Type
1SS406 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original

1SS406

Catalog Datasheet MFG & Type PDF Document Tags

1SS406

Abstract: 1SS406 1SS406 : mm : VF (3) = 0.50 V () · : IR = 0.5 A () · : CT = 3.9 pF () · (Ta = 25°C) VRM 25 V VR 20 V IFM 100 mA , ) (mA) IR IR(A) 1SS406 VF (V) VR (V) P ­ Ta 280 ( : 20 mm × 20 mm, 240 P , 75 2 100 Ta 125 150 (°C) 2007-11-01 1SS406 · · ·
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Original
Abstract: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance Unit: mm : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage VR 20 V Maximum (peak , 2014-03-01 1SS406 2 2014-03-01 1SS406 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and Toshiba
Original

1SS406

Abstract: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance Unit: mm : CT = 3.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating Unit VRM 25 V Reverse voltage , 1 2004-05-06 1SS406 2 2004-05-06 1SS406 RESTRICTIONS ON PRODUCT USE 030619EAA
Toshiba
Original

1SS406

Abstract: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5A (max) Small total capacitance Unit: mm : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25 , Condition Equivalent Circuit (Top View) Unit V Marking A7 1 2007-11-01 1SS406 2 2007-11-01 1SS406 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original

1SS406

Abstract: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5A (max) Small total capacitance Unit: mm : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating Unit VRM 25 V Reverse voltage , 2007-11-01 1SS406 2 2007-11-01 1SS406 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and
Toshiba
Original

DF2S3.6SC

Abstract: TC7SZ34FU 1SS405 1SS406 10 50 0.63 30 30 700 0.5 0.55 700 VF/IR 30 200 0.52 0.6 200 30 , DSR05S30CTB 5 10 IR 1SS420 DSR520 30 30 700 0.39 0.45 700 50 1SS406 DSR01S30SC VF
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Original
TC7SZ00AFS TC7SZ00FE TC7SZ00FU TC7SZ00F TC7WZ00FK TC7WZ00FU DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 BCJ0052E SC-88A SC-74A

mg75n2ys40

Abstract: 2N3055 TOSHIBA .8FE 397 DF5A8.2FU 483 1SS406 313 DF3A6.8FU 399 DF5A8.2JE 485 1SS412 315 , @VR @IF Max (mA) (mA) Typ. 50 100 1SS406 IR, 20 IR 10 50 0.63 , Y 1SS406 W X USC S-MINI trr (ns) P VR IO , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , A8 1SS406 *: SBD: 24 ×3 [ 2 ] (8) (SSM) P VR IFM
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

DF2S6.8UFS

Abstract: SCJ0004N 100 100 1SS413 1SS405 1SS406 50 20 200 20 1SS424 300 20 500
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 CRS01 TPC6K01 HMG01

CRG09

Abstract: CRH02 1SS395 1SS385FV 1SS385 1SS378 100 100 1SS372 1SS413 1SS405 1SS406 50 20
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 1SS416CT CRS13 CMS19 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 1SS372 1SS413 1SS405 1SS406 50 20 200 20 1SS424 300 20 500 0.50
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 SCJ0004R CMG06 CMG08 CMG03 AEC-Q101 CMC02

smd diode Lz zener

Abstract: CRS20I30B 1SS385 1SS378 100 1SS372 100 1SS413 1SS405 1SS406 50 20 200 20 1SS424
Toshiba
Original
SCE0004L smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A CMF03 CMF05 CRF03 CMF02

TPCA*8030

Abstract: lm2804 100 100 1SS413 1SS405 1SS406 50 10 50 0.63 1.0 50 30 100 0.38
Toshiba
Original
TPCA*8030 lm2804 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TC7SHU04FU TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU TC7SET00FU

2fu smd transistor

Abstract: 2FK transistor 100 1SS385FV 100 100 1SS413 1SS405 1SS406 50 10 50 0.63 1.0 50
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Original
2fu smd transistor 2FK transistor 3FV 60 43 HN2S02JE 02CZ2.0 1SV101 U10LC48 CMF01 5JUZ47 5GUZ47 1SS154 1SS271

015AZ15

Abstract: 015DZ4 Ratings 300 1SS389 1SS367 1SS385FV 1SS385F 100 100 1SS413 1SS405 1SS406
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Original
015AZ15 015DZ4 1SV283B CRS06 general purpose zener diode 256 Variable Capacitance Diodes CRF02 CMF04 JDH2S03S 1SS295 1SS315 JDH2S01FS

CMG03

Abstract: DF2S6.8S 1SS395 1SS385FV 1SS385 1SS378 100 1SS372 100 1SS413 1SS405 1SS406 50
Toshiba
Original
DF2S6.8S toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG 1SS391 DSR520CT DSF05S30 SCE0004I

LT 543 common cathode

Abstract: CMG03 0.38 5 0.5 Highspeed 0.50 0.55 50 20 Low10 50 0.63 1.0 100 0.5 IR 10 1SS406 1SS402 , HN2S01JE HN2S01FU HN2S05FU 30 10 7 5 3 1SS402 1SS405 1SS406 HN2S03FE HN2S03FU HN2S03T
Toshiba
Original
LT 543 common cathode DF2S5.6SC DF3S6.8ECT HEDS 5300 toshiba semiconductor catalog 2sc 5296 2010/9SCE0004K

SSM3J307T

Abstract: * HN2S03FE * 1SS406 1SS402 HN2S03FU Low leakage current High-speed switching 50 0.5 0.55 , 1SS348 1SS402 1SS405 1SS406 1SS413 HN2S03FE HN2S03FU 1SS321 HN2S03T Low VF 1SS367 1SS372
Toshiba
Original
SSM3J307T TC75S63TU BCE0030D
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