NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 1SS387 | Galaxy Semi-Conductor Holdings Limited | High Speed Switching Diode |
3 pages, |
Original |  |
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| 1SS387 | Toshiba | Diode - Silicon Epitaxial Pin Type |
4 pages, |
Original | |
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| 1SS387 | Toshiba | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
2 pages, |
Scan | |
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| 1SS387 | Transys Electronics | Plastic-Encapsulate Diodes |
2 pages, |
Original | |
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| 1SS387 | Weitron Technology | High Speed Switching Diodes |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1SS387 1SS387 : mm 2 : VF (3) = 0.98V () : trr = 1.6ns () : CT = 0.5pF () JEDEC JEITA (Ta = 25) : 1.4g () VRM 85 V , ) (//) ( /) () () *: ( : 20mmÃ-20mm : 4mmÃ-4mm) 1 2007-11-01 1SS387 (Ta = 25) VF (1 , trr IF = 10mA ( 1) V A 1. (trr) (TOP VIEW) 2 2007-11-01 1SS387 3 2007-11-01 1SS387 · · · · "" · ... | Original |
4 pages, |
1SS387 1SS387 abstract |
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| Abstract: BL Galaxy Electrical Production specification High Speed Switching Diode FEATURES 1SS387 , Marking 1SS387 Package Code G SOD-523 MAXIMUM RATING @ Ta=25 unless otherwise specified , www.galaxycn.com 1 BL Galaxy Electrical Production specification High Speed Switching Diode 1SS387 , www.galaxycn.com 2 BL Galaxy Electrical Production specification High Speed Switching Diode 1SS387 , Device Package Shipping 1SS387 SOD-523 3000/Tape&Reel Document number: BL/SSSDD003 BL/SSSDD003 ... | Original |
3 pages, |
SOD523 1SS387 datasheet abstract |
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| Abstract: 1SS387 High Speed Switching Diodes SWITCHING DIODE 100 mAMPERES 80 VOLTS P b Lead(Pb)-Free Features: *Extremely High Switching Speed. *Low Reverse Leakage Current. *High Reliability. *Small , PIN 1. CATHODE 2. ANODE 1SS387 Maximum Ratings (Ta=25 C Unless otherwise noted) Symbol , 4.0 ns Characteristic Device Marking Item Marking 1SS387 G WEITRON http://www.weitron.com.tw Eqivalent Circuit diagram 1 2 1SS387 C C C C C FIG.1 Forward ... | Original |
3 pages, |
MARKING C SOD523 1SS387 SOD-523 1SS387 abstract |
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| Abstract: 1SS387 1SS387 High Speed SWITCHING Diodes 1.20 FEATURES Small package 0.80 0.30 1.60 0.10 0.65 SOD-523 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V DC reverse voltage VR 80 V Peak forward current IFM 200 mA Mean rectifying current IO 100 mA , 1SS387 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com ... | Original |
2 pages, |
1SS387 1SS387 abstract |
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| Abstract: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse , current Test Condition 1 Unit V uA 2001-06-13 1SS387 Fig.1 Reverse Recovery Time (trr) Test Circuit Pin Assingnment (Top View) Marking 2 2001-06-13 1SS387 3 2001-06-13 1SS387 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to ... | Original |
4 pages, |
1SS387 1SS387 abstract |
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| Abstract: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = , Reliability Handbook. 2000-12-15 1/3 1SS387 Fig.1 Reverse Recovery Time (trr) Test Circuit Pin , 2/3 1SS387 2000-12-15 3/3 ... | Original |
3 pages, |
1SS387 1SS387 abstract |
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| Abstract: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm Compact 2-pin package  ideal for high-density mounting Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance , Unit V uA 2005-01-08 1SS387 Fig.1 Reverse Recovery Time (trr) Test Circuit Pin Assignment (Top View) Marking 2 2005-01-08 1SS387 3 2005-01-08 1SS387 RESTRICTIONS ... | Original |
4 pages, |
1SS387 1SS387 abstract |
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| Abstract: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm Compact 2-pin package  ideal for high-density mounting Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance , Unit V A 2007-11-01 1SS387 Fig.1 Reverse Recovery Time (trr) Test Circuit Pin Assignment (Top View) Marking 2 2007-11-01 1SS387 3 2007-11-01 1SS387 RESTRICTIONS ... | Original |
4 pages, |
1SS387 1SS387 abstract |
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| Abstract: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF (3) = 0.98V (typ.) l Fast reverse , current Test Condition 1 Unit V uA 2001-06-13 1SS387 Fig.1 Reverse Recovery Time (trr) Test Circuit Pin Assingnment (Top View) Marking 2 2001-06-13 1SS387 3 2001-06-13 1SS387 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to ... | Original |
4 pages, |
1SS387 1SS387 abstract |
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| Abstract: Transys Electronics L I M I T E D SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed SWITCHING Diodes FEATURES Small package Maximum Ratings and Electrical Characteristics, Single Diode @T A=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V DC reverse voltage VR 80 V Peak forward current IFM 200 mA Mean rectifying current IO , VR=6V,IF=10mA,RL=100 Reverse current Typical Characteristics 1SS387 ... | Original |
2 pages, |
1SS387 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed SWITCHING Diodes FEATURES Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V DC reverse voltage VR 80 V Peak forward current IFM 200 mA Mean rectifying , time trr 4 ns VR=6V,IF=10mA,RL=100 Reverse current Typical Characteristics 1SS387 ... | Original |
2 pages, |
1SS387 1SS387 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| @pip/BAS416_2.html,1 1SS381 1SS381 1SS381 1SS381 BA277 BA277 BA277 BA277@pip/BA277_1.html,1 1SS387 BAS516 BAS516 BAS516 BAS516@pip/BAS516_1.html,1 1SS388 1SS388 1SS388 1SS388 1PS79SB30 1PS79SB30 1PS79SB30 1PS79SB30 www.datasheetarchive.com/files/philips/xref/data/xref-v1.txt |
Philips | 15/06/2005 | 676.98 Kb | TXT | xref-v1.txt |
| @pip/BAS416_2.html,1 1SS381 1SS381 1SS381 1SS381 BA277 BA277 BA277 BA277@pip/BA277_1.html,1 1SS387 BAS516 BAS516 BAS516 BAS516@pip/BAS516_1.html,1 1SS388 1SS388 1SS388 1SS388 1PS79SB30 1PS79SB30 1PS79SB30 1PS79SB30 www.datasheetarchive.com/download/46441519-653735ZC/xref-v1.zip (xref.txt) |
Philips | 15/06/2005 | 97.68 Kb | ZIP | xref-v1.zip |
| Diodes, Inc. Part | Type | Industry Part |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BAS16-02VE6327 Buy | Discontinued | 1SS387 Buy | Toshiba |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
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| Toshiba Part | Industry Part | Manufacturer | Description | Category |
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| 1SS387 Buy | DA2S101 Buy | Panasonic (Matsushita) | Switching diode - ESC - SOD-523 | Diodes |
| 1SS387 Buy | MA2S1110G Buy | Panasonic (Matsushita) | Switching diode - ESC - SOD-523 | Diodes |
| 1SS387CT Buy | BAS16-02L Buy | Infineon Technologies | Switching diode - CST2 - | Diodes |
| 1SS387CT Buy | BAS16L Buy | NXP Semiconductors | Switching diode - CST2 - | Diodes |
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