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1SS384TE85LF Toshiba America Electronic Components DIODE ARRAY SCHOTTKY 10V USQ visit Digikey Buy

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1SS384 Datasheet

Part Manufacturer Description PDF Type
1SS384 Toshiba Japanese - Diodes Original
1SS384 Toshiba shottky barrier diode Original
1SS384 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS384 Toshiba DIODE Scan
1SS384TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 10V 100MA USQ Original
1SS384(TE85L,F) Toshiba 1SS384 - Diode Small Signal Schottky 15V 0.1A 4-Pin USQ T/R Original

1SS384

Catalog Datasheet MFG & Type PDF Document Tags

1SS384

Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM , Test Condition Pin Assignment (Top View) Marking 1 2001-06-13 1SS384 2 2001-06-13 1SS384 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

1SS384

Abstract: 1SS384 1SS384 : mm 4 2 : VF (2) = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25) : 0.006 g () VRM 15 V 1­2U1A VR 10 V IFM 200* mA IO 100 , ) (//) ( / ) () () *: 150% 1 2007-11-01 1SS384 (Ta = 25) VF (1 , , (TOP VIEW) f = 1MHz V 2 2007-11-01 1SS384 3 2007-11-01 1SS384 · ·
Toshiba
Original

1SS384

Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2001-06-13 1SS384 2 2001-06-13 1SS384 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA IFSM 1 Toshiba
Original
Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA , Reliability Handbook. 2000-12-15 1/2 1SS384 961001EAA2' · The information contained herein is Toshiba
Original
Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM , 1994-09 1 2014-03-01 1SS384 2 2014-03-01 1SS384 RESTRICTIONS ON PRODUCT USE â Toshiba
Original

1SS384

Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS384 2 2007-11-01 1SS384 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries
Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS384 LOW VOLTAGE HIGH SPEED SWITCHING 1 S S 3 84 · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp (2) = 0.23V (TYP.) (a)Ijr = 5mA UNIT V V mA mA mW °C Weight : 0.006g MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 Vr Maximum (Peak , . 1997-05-07 1/2 TOSHIBA Ip _ Vp IR - V r 1SS384 0.1 0,2 0,3 0.4 FORW ARD VOLTAGE V p -
OCR Scan
961001E

1SS384

Abstract: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS384 2 2007-11-01 1SS384 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is
Toshiba
Original

EL marking

Abstract: 1SS384 TOSHIBA 1SS384 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS384 LOW VOLTAGE HIGH SPEED SWITCHING â'¢ Small Package â'¢ Composed of 2 independent diodes. â'¢ Low Forward Voltage : Vp (2) = 0.23V (TYP.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm )Ijr = 5mA CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS384 If - VF < 0.1 âº5* H 10m K w « OS &
-
OCR Scan
EL marking
Abstract: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj â'¢ Small Package â'¢ Composed of 2 independent diodes. â'¢ Low Forward Voltage : Vp (2) = 0.23V (TYP.) o o + i @Ijr = 5mA 2 -E 3 - M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse , ico n d u cto r R e lia b ility H a n d b o o k . 1997-05-07 1/2 TO SHIBA 1SS384 ip _ Vf -
OCR Scan
Abstract: TO SHIBA TO SHIBA DIODE 1SS384 LO W VOLTAGE HIGH SPEED SW ITCHING 1 SS384 @Ijr = 5mA SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 j 1.25± O.lj · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp (2) = 0.23V (TYP.) o o + i M A X IM U M RATINGS (Ta = 25°C) -E 3 SYMBOL VRM VR Ifm Io :FSM P Tj Tstg Topr RATING 15 10 200 * 100 * 1 100 3 K , b o o k . 1997-05-07 1/2 TO SHIBA ip _ Vf IR Vr 1SS384 Ct - Vr o Eh H O -
OCR Scan

C3692

Abstract: PRF15BB471Q PRF15BB471Q D69 1SS384 4 RT3 RT5 1 2 RT10 RT11 RT12 3 PRF15BB471Q BPWRG
-
Original
FDC655AN VBL16 C3692 VCC3M R748 R980 c954 VREGIN16 VINT16 VDD15 FEB/02/24 1/16W 2SK3019

mg75n2ys40

Abstract: 2N3055 TOSHIBA DF2S12FU 353 DF5A5.6FU 439 1SS383 264 DF2S12S 355 DF5A5.6JE 441 1SS384 266 , 1SS384 S-MINI (SOT-346, SC-59) SMQ (SOT-24, SC-61) SM6 (SOT-26, SC-74) HN2S01FU USV , 100 25 0 A4 1SS322 1SS294 1SS319 * 1SS384 100 10 * * 200 100 20 , ) Max (V) Max 1SS383 100 40 * 100 100 5 40 1SS384 100 10 * 100 100 20
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

DF2S6.8UFS

Abstract: SCJ0004N 1.25 0.8 1.6 S-MINI (SC-59) 2.0 1.25 USM (SC-70) 1.6 1.2 SSM 1SS384
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 1SS367 1SS378 1SS357 2.0 mm 2.0 mm 1SS372 1SS393 2.0 mm 1SS384 2.9 mm
-
Original
TC58V16BFT 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR

CRG09

Abstract: CRH02 ) 1SS394 1SS384 1SS391 VF 1SS377 VF 1SS374 VF HN2S03T 1SS402 SW
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 TESQ 2.9 2.9 S-MINI (SC-59) (mm) 1SS394 1SS384 1SS391 VF 1SS377
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 SCJ0004R CMG06 CMG08 CMG03 AEC-Q101 CMC02

smd diode Lz zener

Abstract: CRS20I30B ) 1SS321 1SS394 Low leakage current, Common cathode 1SS384 1SS377 1SS391 Low VF
Toshiba
Original
SCE0004L smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A CMF03 CMF05 CRF03 CMF02

2fu smd transistor

Abstract: 2FK transistor (mm) 1SS395 (mm) SMQ (SC-61) 2.0 (mm) 2.1 1.2 1.6 (mm) 1SS384 USV
-
Original
2FK transistor 3FV 60 43 HN2S02JE 02CZ2.0 1SV101 1SV283B U10LC48 CMF01 5JUZ47 5GUZ47 1SS154 1SS271

venice 6.2

Abstract: venice 6.5 ) 1SS321 1SS394 Low leakage current, Common cathode 1SS384 1SS377 1SS391 Low VF
-
Original
venice 6.2 venice 6.5 73a 174 coil c33726 tb6808f CA0036 SAA7114 RJ11/RJ45 MAX1632 IEEE1394 H8S/2169A SST49LF004A
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