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1SS383(TE85L,F) Toshiba America Electronic Components Diode Small Signal Schottky 45V 0.1A 4-Pin USQ T/R visit Digikey Buy

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Part : 1SS383T1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 17,500 Best Price : $0.12 Price Each : $0.15
Part : 1SS383(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 5,600 Best Price : $1.39 Price Each : $1.50
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1SS383 Datasheet

Part Manufacturer Description PDF Type
1SS383 Kexin Low Voltage High Speed Switching Original
1SS383 Toshiba Japanese - Diodes Original
1SS383 Toshiba shottky barrier diode Original
1SS383 TY Semiconductor Low Voltage High Speed Switching - SOT-343 Original
1SS383 Toshiba DIODE LOW VOLTAGE HIGH SPEED SWITCHING Scan
1SS383 Toshiba DIODE Scan
1SS383T1 On Semiconductor DIODE SCHOTTKY DIODE 40V 0.3A 4SC-82 T/R Original
1SS383T1G On Semiconductor DUAL SCHOTTKY SC82 Original
1SS383T2G On Semiconductor DUAL SCHOTTKY SC82 Original
1SS383(TE85L,F) Toshiba 1SS383 - Diode Small Signal Schottky 45V 0.1A 4-Pin USQ T/R Original

1SS383

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak , production 1994-09 1 2014-03-01 1SS383 2 2014-03-01 1SS383 RESTRICTIONS ON PRODUCT USE Toshiba
Original

1SS383

Abstract: 1SS383 1SS383 : mm 4 2 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25) : 0.006 g () VRM 45 V 1­2U1A VR 40 V IFM 300* mA IO 100 , ) (//) ( / ) () () *: 150% 1 2007-11-01 1SS383 (Ta = 25) VF (1 , 18 25 pF (TOP VIEW) 2 2007-11-01 1SS383 3 2007-11-01 1SS383 ·
Toshiba
Original

1SS383

Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 2001-06-13 1SS383 2 2001-06-13 1SS383 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original

1SS383

Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF (3) = 0.54V (typ.) l Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 2001-06-13 1SS383 2 2001-06-13 1SS383 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original
Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 2000-12-15 1/2 1SS383 Toshiba
Original
961001EAA2

1SS383

Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS383 2 2007-11-01 1SS383 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Toshiba
Original
Abstract: ''+16Vã'2mA ã''ã''ã''ã''-7Vã'2mA D1,2 1SS383 Shutdown VIN 2.4V to 3V L CMD5D13(47uH) C1 2.2uF(CERAMIC , D1,2 1SS383 C4 10uF(CERAMIC) -6 0.1 - HIGH , 180kohm EXT GND Tr XP151A13A0MR RFB2 68kohm D3,4 1SS383 C5 2.2uF(CERAMIC) C7 2.2uF , ''2.4V~3V ã''ã''ã''ã''+9Vã'2mA ã''ã''ã''ã''-6Vã'2mA C1 2.2uF(CERAMIC) D1,2 1SS383 L CMD4D11(47uH Torex Semiconductor
Original
MA2Q737 XC9105D092MR XP151A12A2MR XP152A12C0MR
Abstract: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 â'¢ â'¢ â'¢ â'¢ j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p( 3) = 0.54V(TYP.) Low Reverse Current : Ir = 5//A (MAX.) oo + i 2 -E3- M A X IM U M RATINGS (Ta = 25°C) SYMBOL , T O SH IB A 1SS383 ip - V f IR - V r z § tí o 0 G 03 < 1 o -
OCR Scan
Abstract: T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 LO W VOLTAGE HIGH SPEED SWITCHING 1SS383 Unit in mm 2.1 ± 0.1 · · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : V p( 3) = 0.54V(TYP.) Low Reverse Current : Ir = 5//A (MAX.) UNIT V V mA mA A mW °C °C °C oo + i j 1.25± O.lj oo + i -E3+ 1 2 M A X IM U M RATINGS (Ta = 25 , in the TOSH IBA Sem iconductor Reliability Handbook. 1997-05-07 1/2 T O SH IB A 1SS383 -
OCR Scan

1SS383

Abstract: TOSHIBA 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS383 LOW VOLTAGE HIGH SPEED SWITCHING â'¢ Small Package â'¢ Composed of 2 independent diodes. â'¢ Low Forward Voltage : Vp (3) = 0.54V (TYP.) â'¢ Low Reverse Current : Ir = 5/^A (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 45 V Reverse Voltage Vr 40 V Maximum , . 1997-05-07 1/2 TOSHIBA 1SS383 CT - VR 961001EAA2' 0 The information contained herein is presented only
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OCR Scan

1SS383

Abstract: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS383 2 2007-11-01 1SS383 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries
Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE 1SS383 LOW VOLTAGE HIGH SPEED SWITCHING 1 SS383 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 · · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp (3 ) = 0.54V (TYP.) Low Reverse Current ; I r = 5^A(MAX,) q MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse Voltage 45 VRM Reverse , TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS383 ip - vf ir -
OCR Scan
Abstract: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage VR R everse voltage M VR R ating U nit 85 V 80 V (1) mA mA M axim um (peak) forward current IF M 300 A verage forward current IO 100 (1) S urge current (10 m s TY Semiconductor
Original

smd A4

Abstract: MARKING A4 Diodes SMD Type Low Voltage High Speed Switching 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage VR R everse voltage M VR R ating U nit 85 V 80 V (1) mA mA M axim um (peak) forward current IF M 300 A verage forward current IO 100 (1) S
Kexin
Original
smd A4 MARKING A4 f1 smd marking smd sot343 SM21 smd marking SOT343

C8816

Abstract: pj999 R8104 1/16W 470(J) PVONCP-EBP C8850 Q8850 1SS383(TE85L) G36420020045 C8851 Q8136 16V 10uF(K , 207 208 210 211 MCV 210 211 230 GND 1SS383(TE85L) A1 A2 GND G36420020045 2 2 , 2 AINMUX06 C2 IC8975 R8963 1SS383(TE85L) A1 G36420020045 GND GND A2 3 4
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Original
C8807 C8816 pj999 C8813 c8980 C8815 C8817 G36010116202 Q8901 G36410121028 C8802 R8821 C8805

mg75n2ys40

Abstract: 2N3055 TOSHIBA DF2S12FU 353 DF5A5.6FU 439 1SS383 264 DF2S12S 355 DF5A5.6JE 441 1SS384 266 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , 80 1.20 100 3 0 4 A1 * 1SS383 100 40 * * 300 100 5 40 0.60 , ) Max (V) Max 1SS383 100 40 * 100 100 5 40 1SS384 100 10 * 100 100 20
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 1SS374 1SS392 1SS383 1SS377 1SS396 s List of Characteristics of Low V F Type and Standard
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Original
TC58V16BFT 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR

DF2S6.8UFS

Abstract: SCJ0004N IR VF IR IR VF VF IR IR VF/IR VF/IR 1SS322 1SS294 (HN2S07T) 1SS383
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

MM1517X

Abstract: C2240 37 24 12 2 12- HEADL-PXP HEADR-PXP C2288 A1 A2 G36420020045 A-GND C2291 1SS383(TE85L
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Original
W2106 C2625 MM1517X C2240 C2259 c2255 C2275 G36220310018 G36010128656 PJ2103 PJ2150 R2300 R2301

CRG09

Abstract: CRH02 1SS383 1SS392 1SS319 1SS396 1SS348 *: *: 17 2010/1
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

smd diode Lz zener

Abstract: CRS20I30B 1SS383 1SS319 Standard, Independent diodes 1SS393 1SS392 Standard, Common cathode
Toshiba
Original
SCE0004L smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A CMG06 CMG08 CMG03 AEC-Q101 CMC02
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