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Part : 1SS377(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,000 Best Price : $0.0611 Price Each : $0.0964
Part : 1SS377(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,250 Best Price : $0.9370 Price Each : $1.14
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1SS377 Datasheet

Part Manufacturer Description PDF Type
1SS377 Kexin High Speed Switching Diode Original
1SS377 Toshiba shottky barrier diode Original
1SS377 Toshiba Japanese - Diodes Original
1SS377 TY Semiconductor High Speed Switching Diode - SOT-23 Original
1SS377 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS377 Toshiba DIODE (HIGH SPEED SWITCHING) Scan
1SS377 Toshiba DIODE Scan

1SS377

Catalog Datasheet MFG & Type PDF Document Tags

TO-236MOD

Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching z z Low forward voltage Small package : VF = 0.23V (typ.) @IF = 5mA : SC-59 Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage , 1SS377 2 2007-11-01 Toshiba
Toshiba
Original
TO-236MOD

1SS377

Abstract: 1SS377 1SS377 : mm : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 15 V TO­236MOD SC­59 1­3G1F VR 10 V IFM 200* mA IO 100 , ) (//) ( / ) () () *: 150% 1 2007-11-01 1SS377 (Ta = 25°C) VF (1 , 20 40 pF (TOP VIEW) 2 2007-11-01 1SS377 3 2007-11-01 1SS377 ·
Toshiba
Original

1SS377

Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm l Low forward voltage : VF = 0.23V (typ.) @IF = 5mA l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-13 1SS377 2 2001-06-13 1SS377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

1SS377

Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-13 1SS377 2 2001-06-13 1SS377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original
Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward , 1/2 1SS377 2000-09-14 2/2 Toshiba Toshiba
Original
961001EAA2
Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching z z Low forward voltage Small package : VF = 0.23V (typ.) @IF = 5mA : SC-59 Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage , 1SS377 2 2007-11-01 1SS377 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its Toshiba
Original

S3 DIODE schottky

Abstract: S4 DIODE schottky 1S1585 1SS294 1SS377 2SS2S0 1SS374 1SS377 1S1585 1S158S 1S1585 1S1585 1S1585 FS Schottky barrier Series
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OCR Scan
2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B MARK MQ 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367
Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit: mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V , Marking Start of commercial production 1993-12 1 2014-03-01 1SS377 2 2014-03-01 1SS377 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original

1SS377

Abstract: u25 diode TOSHIBA 1SS377 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS377 HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage : = 0.23V (Typ.) @IF = 5mA Small Package : SC-59 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current :FM 200* mA Average Forward Current io 100* mA Surge , to change without notice. 1997-05-07 1/2 TOSHIBA 1SS377 If - VF IR - VR
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OCR Scan
u25 diode vr-1M

1SS377

Abstract: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V , V Equivalent Circuit (Top View) Marking 1 2007-11-01 1SS377 2 2007-11-01 1SS377 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE 1SS377 HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 -Q 3 =+ Q 8 5 IO HO · . Low Forward Voltage : Vp = 0.23V (Typ.) @Ip = 5mA Small Package : SC-59 UNIT V V mA mA A mW °C °C °C dd + I d i M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse Voltage 15 Vr m Reverse Voltage 10 , P3 » 1SS377 -
OCR Scan
Abstract: 1SS377 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 â'™ -Q 3 â'¢ . Low Forward Voltage : Vp = 0.23V (Typ.) @Ip = 5mA Small Package : SC-59 = +Q85 IO HO dd + I d i MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse Voltage 15 V rm Reverse Voltage 10 , ?0 CO P3 o C ja » r I t> O P3 » < 50 1SS377 -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS377 U WÊÊÊF < ; ^ 7 7 9Ê Ê F w ar m m HIGH SPEED SWITCHING. + 0. 5 2.5 - 0 ,3 , U nit in mm c. + a 2 5 in HO · · Low Forward Voltage : Vp = 0.23V (Typ.) @Ip = 5mA Small Package : SC-59 dd + 1 d MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak , LTI 1 o 1SS377 150 IS J n5 -
OCR Scan
Abstract: Product specification 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V(Typ). @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute M axim um R atings T a = 25 P aram eter S ym bol R ating U nit V RM 15 V R everse V oltage VR 10 V M axim um TY Semiconductor
Original

1SS377

Abstract: marking O9 Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V(Typ). @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (P eak) R everse V oltage R ating U nit V RM
Kexin
Original
marking O9

mg75n2ys40

Abstract: 2N3055 TOSHIBA DF5A3.6JE 431 1SS377 255 DF2S8.2FS 347 DF5A5.6CFU 433 1SS378 257 DF2S8 , (SOT-353, SC-88A) 1SS394 1SS391 HN2S01F 1SS377 10 1SS378 100 0.3 10 20 , 0 4 B3 1SS184 0 O9 1SS377 trr (ns) P VR IO (mW) (V , 100 0.3 * 1SS385 40 0 O9 1SS378 1SS377 20 10 0.5 100 * 1SS422 , 0.50 100 0.30 5 40 0 O9 1SS377 0.50 100 0.60 100 25 0
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

1S1585

Abstract: 1SS239 1SS336 1SS337 1SS344 1SS348 1SS349 1SS374 1SS377 1SS379 HN1D01F HN1D02F HN1D03F HN2D01F High-speed
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OCR Scan
1SS239 1SV99 1SS241 1SV103 1SV147 1S1585 equivalent 1ss193 equivalent 1SS SOT mark 107YP 1SS181 1SS187 1SS190 1SS193 1SS196

diode Z47

Abstract: S360 DIODE - - - - - _ - _ - - - - - 1SS378 1SS372 - 1SS377 1SS374 1SS321 1SS294
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OCR Scan
02CZ5 diode Z47 S360 DIODE Z3.3 Z5.6 z43 diode HN2D01FU HN2D02FU 1SS362 1SS226 1SS307 1SS272

induction cooker circuit diagram

Abstract: TC7600FNG Protection Diodes Switching Diodes 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min , protection//200 mW (4 in 1) 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min) Schottky , Protection Diodes Switching Diodes 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min , (USM) 1SS344/1SS377 (S-Min) Schottky Barrier Diodes 1SS401/1SS318 (USM) 3-pin (1 in 1)/(2 in , protection//200 mW (4 in 1) 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min) Schottky
Toshiba
Original
induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG mosfet induction heater SCE0013D

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 switching power supply Maker Package Code MPAK FUJI SANKEN SHINDENGEN TOSHIBA 1SS377
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Original
MA151WK 1SS211 ISS376 DA323K IPS302 diode cross reference 1s1555 diode cross reference 1s2473 1S2473 DIODE equivalent 1S2473 DIODE DO-35 1S1555 1S1588 1SS104 1S1553 1S1554
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