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Part : 1SS372-TE85L Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 2,225 Best Price : $0.6435 Price Each : $1.95
Part : 1SS372(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,200 Best Price : $0.7440 Price Each : $0.7440
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1SS372 Datasheet

Part Manufacturer Description PDF Type
1SS372 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original
1SS372 Kexin High Speed Switching Diode Original
1SS372 Toshiba shottky barrier diode Original
1SS372 Toshiba Japanese - Diodes Original
1SS372 TY Semiconductor Silicon Epitaxial Schottky Barrier Diode - SOT-323 Original
1SS372 TY Semiconductor High Speed Switching Diode - SOT-323 Original
1SS372 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS372 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan
1SS372 Toshiba DIODE Scan

1SS372

Catalog Datasheet MFG & Type PDF Document Tags

1SS372

Abstract: 1SS372 1SS372 : mm : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25°C) : 0.006 g () VRM 15 V SC­70 1-2P1C VR 10 V IFM 200* mA IO 100* mA , ) (//) ( / ) () () *: 70% 1 2007-11-01 1SS372 (Ta = 25°C) VF (1 , 20 40 pF 2 2007-11-01 1SS372 3 2007-11-01 1SS372 · · ·
Toshiba
Original

diode marking N9

Abstract: SOT-323 n9 BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 FEATURES Pb Small surface mounting type. Lead-free Small package. Low forward voltage:VF=0.23V(typ). , Package Code 1SS372 N9 SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter , Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 PACKAGE OUTLINE , Package Shipping 1SS372 SOT-323 3000/Tape&Reel Document number: BL/SSSKF013 Rev.A
BL Galaxy Electrical
Original
diode marking N9 SOT-323 n9 diode N9 sot 323 marking code sot323 marking K 3000/T

1SS372

Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2001-06-07 1SS372 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
SC-70

MARKING N9

Abstract: diode marking N9 1SS372 Schottky Barrier Diodes SOT-323 Features Small surface mounting type. Small package. Low forward voltage:VF=0.23V(typ). Applications For general purpose applications. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS372 Marking N9 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter Non-Repetitive Peak reverse voltage Diode reverse voltage Forward continuous Current Forward Surge Current (10ms) Power Dissipation Junction
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Original
MARKING N9
Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current , 1 2014-03-01 1SS372 2 2014-03-01 1SS372 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Toshiba
Original

1SS372

Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2007-11-01 1SS372 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Toshiba
Original
Abstract: Product No. 1SS372-T1 1. 2. Package Type Shipping Quantity SOT-323 3000/Tape & Reel , ' suffix to part number above. For example, 1SS372-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS372 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , ® 1SS372 WON-TOP ELECTRONICS Electrical Characteristics @TA=25°C unless otherwise specified , ® 1SS372 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) N9 N9 Won-Top Electronics
Original
MIL-STD-202

1SS372

Abstract: TOSHIBA_1SS372 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS372 HIGH SPEED SWITCHING APPLICATION Unit in mm â'¢ Small Package Low Forward Voltage : Vjr = 0.23V (TYP.) @IF = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current lFM 200* mA Average Forward Current io 100* mA , subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS372 If - VF IR - VR
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OCR Scan
961001EAA2
Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , to change without notice. 2000-09-14 1/2 1SS372 2000-09-14 2/2 Toshiba Toshiba
Original

1SS372

Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2007-11-01 1SS372 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its
Toshiba
Original
Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA IFSM 1* A Power dissipation P 100 mW Junction temperature Toshiba
Original

1SS372

Abstract: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2001-06-07 1SS372 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original

1SS372

Abstract: Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V (typ.) @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Average forward current IO 100 * mA Maximum (Peak) forward current IFM 200 * mA Surge current (10ms) IFSM 1* A P 100 mW Power
Kexin
Original

SS372

Abstract: T O SH IB A TOSHIBA DIODE 1SS372 HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 · · Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA 2 1.2 5 ± 0.1 o c + i MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 Vr Maximum (Peak) Forward 200 , CAPACITANCE C t (pF) FORWARD CURRENT IF (A) 0 50 O 1-3 1 O < £S o M c 1SS372
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OCR Scan
Abstract: TOSHIBA TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS372 1 HIGH SPEED SWITCHING APPLICATION · · Small Package Low Forward Voltage : Vf = 0.23V (TY P .) @Ijr = 5 m A M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Vn'llncr#» Reverse Voltage Maximum (Peak) Forward C urrent Average Forward Current Surge C urrent (10ms) Power Dissipation Junction , / / / / // T a (°C) 0 LTI 1 o 1SS372 ISJ n 5 -
OCR Scan
Abstract: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 â'¢ â'¢ 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C) 2 SYMBOL CHARACTERISTIC RATING Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 , CURRENT I r (A) 1SS372 -
OCR Scan
Abstract: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Kexin
Original
Abstract: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem perature range T stg TY Semiconductor
Original
Abstract: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem perature range T stg TY Semiconductor
Original

S3 DIODE schottky

Abstract: S4 DIODE schottky Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80
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OCR Scan
1S1585 2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B 1SS294 1SS377 1SS374 1S158S 10TYP
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