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1SS370TE85LF Toshiba America Electronic Components DIODE GEN PURP 200V 100MA SC70 visit Digikey Buy
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1SS370 Datasheet

Part Manufacturer Description PDF Type
1SS370 Kexin Silicon Epitaxial Planar Type Original
1SS370 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS370 Toshiba Japanese - Diodes Original
1SS370 Transys Electronics Plastic-Encapsulated Diode Original
1SS370 TY Semiconductor Silicon Epitaxial Planar Type - SOT-23 Original
1SS370 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS370 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan
1SS370TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 200V 100MA USM Original

1SS370

Catalog Datasheet MFG & Type PDF Document Tags

1SS370

Abstract: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-70 Maximum , Condition SC-70 1-2P1D 1 Unit V µA 2001-06-07 1SS370 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS370 RESTRICTIONS ON PRODUCT USE 000707EAA
Toshiba
Original

ldr 100k

Abstract: ldr 1000 EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 180k VDD 3.0V 0.47mH , OUT1 OUT2 EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 180k VDD 3.0V , OCE OUT1 OUT2 EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 180k VDD , Consumption:40mA 360k OCE OUT1 EL sheet 1k* VDD OUT2 180k 3.0V 0.1µF 100V Diode:TOSHIBA 1SS370 , 0.47mH VSS OSC LDR CHV 100k 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 3.0V
Nippon Precision Circuits
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SM8142BV ldr 100k ldr 1000 LDR 005 ldr 05 SM8142 SM8142A SM8142B 200VP-P 1000H SM8142AD
Abstract: 1SS370 Surface Mount Switching Diode SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 200 VOLTS Features: * High Voltage, High Speed Switching Applications * Low Forward Voltage : VF = 0.9V , 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 02-Sep-09 1SS370 , nS VR=50V VR=200V Device Marking Item Marking 1SS370 F5 WEITRON http://www.weitron.com.tw 2/3 02-Sep-09 1SS370 Electrical Characteristic Curves (TA=25°C Unless Specified Weitron
Original

VR200

Abstract: 1SS370 1SS370 1SS370 : : : : : mm SC-70 VF (2) = 0.90V () trr = 60ns () CT = 1.5pF () JEDEC JEITA : 0.006 g () (Ta = 25°C) VRM 250 V SC­70 1­2P1D VR 200 V IFM 300 , : (//) ( /) () () 1 2007-11-01 1SS370 (Ta = 25°C) VF (1 , 2007-11-01 1SS370 1. (trr) 3 2007-11-01 1SS370 · · ·
Toshiba
Original
VR200

Circuit diagram of LDR

Abstract: LDR Datasheet 100k EL sheet 180k 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC , 1SS370 Coil:MURATA LQH4N471K04M00 0.47mH VSS CHV OCE OUT1 VDD EL sheet size:10cm2 to , 1.5V 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 C bypass 0.01µF , 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS CHV ENA , OUT2 180k EL sheet 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00
Nippon Precision Circuits
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Circuit diagram of LDR LDR Datasheet LDR -03 100V transformerless power supply circuit LDR 20K ldr 07 SM8142BD SM8142AV NC9810JE

LDR 20K

Abstract: ldr 100k 100k EL sheet 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC , : TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 0.47mH VSS EL sheet size:10cm 2 to 15cm 2 Current , 180k 1.5V 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 Cbypass , Cbypass 0.01µF OUT2 100k EL sheet 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER , Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 0.22mH VSS CHV ENA OUT1 VDD OUT2
Nippon Precision Circuits
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2 pin ldr LDR 03 diode oce ldr 100 k EL driving 575TYP LQH4N221K04M00 1SS250 NC9810L

Circuit diagram of LDR

Abstract: LDR voltage range 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS CHV OCE OUT1 , OUT2 180k EL sheet 180k 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA , Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 0.47mH VSS CHV OCE EL sheet size:30cm 2 to , C bypass 0.01µF OUT2 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 , EL sheet 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS EL
Nippon Precision Circuits
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LDR voltage range 3 pins LDR LDR FUNCTION LDR range Circuit diagram of LDR oscillator 3 pins LDR Datasheet NC9810HE

1SS370

Abstract: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-70 Maximum , the TOSHIBA Semiconductor Reliability Handbook. 2000-09-14 1/3 1SS370 Fig.1 Reverse , change without notice. 2000-09-14 2/3 1SS370 2000-09-14 3/3 Toshiba
Toshiba
Original
961001EAA2

NIPPON CAPACITORS

Abstract: transistor 495 ROSC 150k VDD (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , : Toshiba 1SS370 VDD (IC) 2.4V 2.4V Figure 14. Application circuit The inductance, ROSC can all be , LQH4N C1: Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V Figure 17. Application circuit , : Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 2.4V 2.4V Figure 20. Application circuit , : Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V Figure 23. Application circuit Current
Nippon Precision Circuits
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NIPPON CAPACITORS transistor 495 LDR 24v SM8144 SM8144B CUITS--18 NK0005AE CIRCUITS--19

1SS370

Abstract: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC , current Test Condition SC-70 1-2P1D 1 Unit V µA 2001-06-07 1SS370 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS370 RESTRICTIONS ON
Toshiba
Original

1SS370

Abstract: J-STD-020D 1SS370 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 200 Volts FORWARD CURRENT ­ 0.1 , Characteristics @ TA = 25 unless otherwise specified Characteristic Symbol 1SS370 Units VRRM 250 , RATING AND CHARACTERISTIC CURVES 1SS370 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse , Fig.5 Reverse Recovery Time (trr) Test Circuit Device Marking : Device P/N 1SS370 Marking F5 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS370 Important Notice and Disclaimer LSC
Lite-On Semiconductor
Original
J-STD-020D 2002/95/EC KSYR13

transistor 91 330

Abstract: k11r ROCL 180k VDD (Coil) ROCE 180k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , ) VDD (IC) ROCE 130k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 3.0V , ROCL 360k VDD (Coil) ROCE 130k L: Panasonic ELL6SH C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 27 , : Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 30 EL size [cm 2 ] [cm ] 49.5
Nippon Precision Circuits
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transistor 91 330 k11r K11-R CIRCUITS-20 220 uh SM8143 SM8143A 1SM8143 CIRCUITS--17 CIRCUITS--18 F/100V

inductor CM 10 uH

Abstract: k11r D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 9 R OUT = 0 , GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 2.4V 2.4V 14 SM8144 ROSC EL size [cm 2 ] [cm ] 15.0 , ) VDD (IC) L: Murata LQH4N C1: Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V 17 EL size , ROSC 220k VDD (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V 23 EL size [cm 2 ] [cm ] 30.1 30.1 30.1 30.1 30.1 30.1 ROSC
Nippon Precision Circuits
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inductor CM 10 uH 220uh 1SM8144 NK0005A CIRCUITS--20

LDR Datasheet

Abstract: LDR 20K 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC 0.47mH VSS OUT1 , OCL Cbypass 0.01µF 180k EL sheet 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 , 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 Cbypass 0.01µF 0.47mH , OUT2 100k EL sheet 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC , 1SS370 Coil: MURATA LQH4N471K04M00 0.22mH VSS CHV ENA OUT1 VDD OUT2 180k 1.5V
Nippon Precision Circuits
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LDR resistor LDR DIMENSIONS LDR 04 2 pin ldr datasheet ldr block diagram ldr features NC9810KE
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE FEATURES High voltage, high speed switching applications Low forward voltage Fast reverse recovery time Small total capacitance 1 3 2 MAKING: F5 Maximum Ratings @Ta=25â"ƒ Parameter Symbol Limit Unit Peak reverse voltage VRM 250 V DC reverse , ,2012 Typical Characteristics 1SS370 Reverse Characteristics Forward Characteristics 100 Jiangsu Changjiang Electronics Technology
Original

1SS370

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES High Voltage, High Speed Switching Applications Low forward voltage Fast reverse recovery time Small total capacitance 3. CATHODE MAKING: F5 Maximum Ratings @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM , 60 Typical Characteristics 1SS370 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original

marking f5

Abstract: diode marking F5 1SS370 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 200 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-323 SOT-323 Dim. A A1 b c D E E1 e e1 L Min. Max. · Fast Switching Speed · , Storage Temperature Range @t=10ms Symbol VRRM VR IFM IO IFSM TJ TSTG 1SS370 Units V V mA mA A 250 , 0.1 1 3 - REV. 0, May-2009, KSYR13 RATING AND CHARACTERISTIC CURVES 1SS370 Fig.1 Typical , Circuit Device Marking : Device P/N 1SS370 Marking F5 Equivalent Circuit Diagram Lite-On
Lite-On Semiconductor
Original
marking f5 diode marking F5

1SS370

Abstract: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , 2007-11-01 1SS370 Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2 2007-11-01 1SS370 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original
Abstract: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 mA Average forward current Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE 1SS370 SILICON EPITAXIAL PLANAR TYPE v r m w 1 , . 1997-05-07 1/2 TOSHIBA Ip _ Vp 1SS370 Ir - v r R EV ER SE VOLTAGE Vr (V) C t - Vr -
OCR Scan
01//F

NIPPON CAPACITORS

Abstract: GRM435R104K100 L: River FLC32PL Diode: Toshiba 1SS370 Figure 9. Output waveform adjustment circuit The effect , ELL6SH Diode: Toshiba 1SS370 Figure 14. Application circuit ROCL1, 2 typical application values (EL1 , : Toshiba 1SS370 Figure 19. Application circuit ROCL1 typical application values (EL1: 30.0 [cm2]) ROCE , : Murata GRM435R104K100 L: Panasonic ELL6SH Diode: Toshiba 1SS370 Figure 26. Application circuit ROCL1 , GRM435R104K100 L: TOKO D52FU-875FU Diode: Toshiba 1SS370 Figure 33. Application circuit ROCL1 typical
Nippon Precision Circuits
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SM8145 CIRCUITS--29 NK0006AE CIRCUITS--30

transistor 91 330

Abstract: Circuit diagram of LDR : Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (Coil) EL lamp 4.3 7.0cm , Blue-Green ROCE 130k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 130k (IC) 3.0V 3.0V Figure 24 , (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 180k ROCL , : Panasonic ELL6SH C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 180k (IC) 3.0V 3.0V Figure
Nippon Precision Circuits
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ldr 10k vsop 16 small ldr 2 pins datasheet NK0001CE
Abstract: TO SHIBA TOSHIBA DIODE 1SS370 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS 1 SS370 SILICON EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 1.25 +0.1 · · · · Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vf (2) = 0.9V (TYP.) trr = 60ns (MAX.) CT =1.5pF (TYP.) SC-70 SYMBOL RATING 250 V rm 200 Vr 300 !f M 100 io 2 ! f SM P 100 125 Tj -5 5 -1 2 5 Tstg , Handbook. 1997 05-07 - 1/2 TO SHIBA ip _ Vf IR - V r 1SS370 FORWARD VOLTAGE VF (V) Ct - -
OCR Scan

FLC32PL

Abstract: NIPPON CAPACITORS 1SS370 ROCE 180k Figure 9. Output waveform adjustment circuit The effect of ROUT for values of 0 , 1SS370 ROCE 180/110k Figure 14. Application circuit ROCL1, 2 typical application values (EL1 , Precision Blue-Green CCHV: Murata GRM435R104K100 L: Panasonic ELL6SH Diode: Toshiba 1SS370 ROCE 180 , Blue-Green CCHV: Murata GRM435R104K100 L: Panasonic ELL6SH Diode: Toshiba 1SS370 ROCE 180/110k , CCHV: Murata GRM435R104K100 L: TOKO D52FU-875FU Diode: Toshiba 1SS370 ROCE 180/110k Figure 33
Nippon Precision Circuits
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Antenna Coil 330uh small ldr 2 pins QFN-20 875fu NK0006BE

ldr 10k

Abstract: NIPPON CAPACITORS Blue-Green D1 Cbypass 0.01µF L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROSC 150k VDD VDD , D1: Toshiba 1SS370 ROSC 180k VDD (Coil) VDD (IC) 2.4V 2.4V Figure 17. Application , D1: Toshiba 1SS370 ROSC 220k VDD VDD (Coil) (IC) 2.4V 2.4V Figure 20. Application , D1: Toshiba 1SS370 ROSC 270k VDD (Coil) VDD (IC) 2.4V 2.4V Figure 23. Application
Nippon Precision Circuits
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LDR 5K NK0005BE
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