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1SS367,H3F Toshiba America Electronic Components DIODE SCHOTTKY 10V 100MA SC76 visit Digikey Buy

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1SS367 Datasheet

Part Manufacturer Description PDF Type
1SS367 Kexin High Speed Switching Application Original
1SS367 Toshiba shottky barrier diode Original
1SS367 Toshiba Japanese - Diodes Original
1SS367 TY Semiconductor High Speed Switching Application - SOD-323 Original
1SS367 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS367 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan
1SS367 Toshiba DIODE Scan
1SS367TH3FT Toshiba 1SS367TH3FT - Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R Original
1SS367TPH3F Toshiba 1SS367TPH3F - 1SS367TPH3F Original

1SS367

Catalog Datasheet MFG & Type PDF Document Tags

1SS367

Abstract: 1SS367 1SS367 : mm 2 : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25°C) : 0.004 g () VRM 15 V 1­1E1A VR 10 V IFM 200 mA IO 100 mA IFSM , ) (//) ( / ) () () *: (: 20mm×20mm: 4mm×4mm) 1 2007-11-01 1SS367 (Ta = 25°C) VF (1 , 20 40 pF (TOP VIEW) 2 2007-11-01 1SS367 3 2007-11-01 1SS367 ·
Toshiba
Original

1SS367

Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-07 1SS367 2 2001-06-07 1SS367 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

Marking Code "s3" diode

Abstract: S3 DIODE schottky 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features · Low forward voltage PINNING DESCRIPTION PIN 1 Applications · High Speed Switching Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 Ta=100°C 300 300m 100m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 PACKAGE
Semtech Electronics
Original
Marking Code "s3" diode S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode

Marking Code "s3" diode

Abstract: MARKING 3M SOD-323 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features · DESCRIPTION PIN 1 VF = 0.23V (typ.) @IF = 5mA Cathode 2 Low forward voltage: Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol , /2004 1SS367 100m 100 30m Reverse Current IR (A) Ta=100°C 75°C 50°C 25°C 10m , , Stock Code: 724) ® Dated : 30/08/2004 1SS367 PACKAGE OUTLINE Plastic surface mounted
Semtech Electronics
Original
MARKING 3M SOD-323

1SS367

Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , (Top View) Unit V Marking 1 2007-11-01 1SS367 2 2007-11-01 1SS367
Toshiba
Original

1SS367

Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-07 1SS367 2 2001-06-07 1SS367 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original
Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , 1/2 1SS367 2000-09-14 2/2 Toshiba Toshiba
Original
961001EAA2

3m sod

Abstract: marking 3m sod-323 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features · Low forward voltage PINNING DESCRIPTION PIN 1 Applications · High Speed Switching Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 Ta=100°C 300 300m 100m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 PACKAGE
Semtech Electronics
Original
3m sod

1SS367

Abstract: S3 marking DIODE 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features · DESCRIPTION PIN 1 VF = 0.23V (typ.) @IF = 5mA Cathode 2 Low forward voltage: Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol , /2004 1SS367 Ta=100° C 300 300m 100m 100 Reverse Current IR (A) Ta=100° C 30m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/08/2004 1SS367 PACKAGE
Semtech Electronics
Original

marking OE

Abstract: 1SS367 TOSHIBA 1SS367 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS367 HIGH SPEED SWITCHING APPLICATION â'¢ Small Package Low Forward Voltage : Vjr = 0.23V (TYP.) MAXIMUM RATINGS (Ta = 25°C) )Ijr = 5mA CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current ÏFM 200 mA Average Forward Current io 100 mA , /2 TOSHIBA 1SS367 If - VF IR - VR 00Â
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OCR Scan
marking OE MARKING L toshiba USC

1SS367

Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , (Top View) Unit V Marking 1 2007-11-01 1SS367 2 2007-11-01 1SS367
Toshiba
Original
Abstract: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage , Marking Start of commercial production 1993-04 1 2014-03-01 1SS367 2 2014-03-01 1SS367 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS367 HIGH SPEED SWITCHING APPLICATION · · Small Package Low Forward Voltage : Vf = 0.23V (TYP.) @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Vn'llncr#» SYMBOL RATING 15 10 200 UNIT VRM VR X FM V V mA Reverse Voltage Maximum (Peak) Forward C urrent Average Forward Current , . 1997-05-07 1/2 TOSHIBA Ip _ Vp IR - Vr 1SS367 REVERSE VOLTAGE Vr (V) Ct - Vr f - lM H -
OCR Scan

S3 DIODE schottky

Abstract: S4 DIODE schottky Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching , EE33 S3 1SS294 Schottky barrier 1SS373 Low VF switching 10 100 S4 1SS367
-
OCR Scan
1S1585 2SA1015 S4 DIODE schottky common anode schottky diode DIODE MARK B MARK MQ 1SS377 1SS374 1S158S 10TYP 1SS312
Abstract: 1SS367 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SSB67 HIGH SPEED SW ITCHING APPLICATION â'¢ â'¢ Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse V 15 Vr m Voltage 10 V Reverse Voltage Vr Maximum (Peak) Forward mA 200 !f M Current , notice. 1997 - 05-07 1/2 1SS367 TO SHIBA ip _ Vf IR - V r Ct - V r Ta H O 2 -
OCR Scan

1SS367

Abstract: marking S4 Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF(3) = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Maximum (peak) reverse voltage Parameter VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward
Kexin
Original
marking S4 markingS4
Abstract: TO SHIBA TO SHIBA DIODE 1SS367 HIGH SPEED SW ITCHING APPLICATION 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE · · Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse V 15 Vr m Voltage 10 V Reverse Voltage Vr Maximum (Peak) Forward mA 200 !f M Current mA Average Forward , # 1997 - 05-07 1/2 TO SHIBA ip _ Vf 300m IR Vr 1SS367 H £ W tí tí O 0 Q -
OCR Scan

DF2S3.6SC

Abstract: TC7SZ34FU 0.6 100 1SS367 10 5 100 1SS421 DSF521 DSF05S30CTB USC (SOD , Typ. Max (mA) Max (V) 0.23 0.3 20 IR (A) VF (V) 1SS367 5 10 100 Ta 25 30
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Original
TC7SZ00AFS TC7SZ00FE TC7SZ00FU TC7SZ00F TC7WZ00FK TC7WZ00FU DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU TC7SZ02F BCJ0052E SC-88A SC-74A
Abstract: Product specification 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF(3) = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Maximum (peak) reverse voltage Parameter VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA TY Semiconductor
Original

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS367 246 DF2S6.2FS 339 DF5A3.6CJE 425 1SS370 248 DF2S6.2S 341 DF5A3 , USM (SOT-323, SC-70) 100 0.23 VF 0.3 0.35 10 Max USC (SOD-323) 1SS367 , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , 20 10 0.5 100 20 0 A6 1SS367 1SS394 ×2 * HN2S02JE 100 40 , 40 300 100 5 40 0.60 100 25 0 S3 1SS294 0.30 5 * 1SS367
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C
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