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Part : 1SS322(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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1SS322 Datasheet

Part Manufacturer Description PDF Type
1SS322 Kexin Low Voltage High Speed Switching Original
1SS322 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS322 Toshiba Japanese - Diodes Original
1SS322 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original
1SS322 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS322 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS322 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS322 Toshiba DIODE Scan
1SS322TE85L Toshiba 1SS322 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS322TE85R Toshiba 1SS322 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original

1SS322

Catalog Datasheet MFG & Type PDF Document Tags

1SS322

Abstract: 1SS322 1SS322 : mm : SC-70 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.006 g () VRM 45 V , Tstg 55125 °C : (//) ( / ) () () 1 2007-11-01 1SS322 (Ta = 25 , CT VR = 0, f = 1MHz 18 25 pF 2 2007-11-01 1SS322 3 2007-11-01 1SS322 · · · · "" · · · ·
Toshiba
Original

1SS322

Abstract: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , 1SS322 2 2007-11-01 1SS322 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Toshiba
Original

1SS322

Abstract: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , 1 2001-06-07 1SS322 2 2001-06-07 1SS322 RESTRICTIONS ON PRODUCT USE 000707EAA
Toshiba
Original

1SS322

Abstract: TOSHIBA 1SS322 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS322 LOW VOLTAGE HIGH SPEED SWITCHING. â'¢ Low Forward Voltage : Vp (3) = 0.54V (Typ.) â'¢ Low Reverse Current : ir = 5/^A (Max.) â'¢ Small Package : SC-70 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current SYMBOL VRM VR , subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS322 Ct - vr 1997-05-07 2/2
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OCR Scan
961001EAA2

MARKING toshiba

Abstract: 1SS322 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 , 2001-06-07 1SS322 2 2001-06-07 1SS322 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original
MARKING toshiba TOSHIBA DIODE

1SS322

Abstract: JEDEC SC-70 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 , to change without notice. 2000-09-11 1/2 1SS322 2000-09-11 2/2 Toshiba
Toshiba
Original
JEDEC SC-70
Abstract: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SCâ'70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100 mW Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS322 1 Unit in mm 2.1 ± 0.1 LOW VOLTAGE HIGH SPEED SWITCHING. · · · Low Forward Voltage : Vp (3) = 0.54V (Typ.) Low Reverse Current : I r = 5^A (Max.) Small Package : SC-70 1.25 + 0.1 tr¡ - s o \ 1 T 2 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward , . 1997-05-07 1/2 TOTAL CAPACITANCE Ct (pFl 100 1997-05-07 2/2 TOSHIBA 1SS322 FORWARD -
OCR Scan

1SS32

Abstract: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5A (max) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage , Unit 0.60 5 25 V A pF Marking 1 2007-11-01 1SS322 2 2007-11-01 1SS322 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and
Toshiba
Original
1SS32

1SS322

Abstract: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , 1SS322 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

1SS322

Abstract: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS322 Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage : V f ~ 0 ·54V(Typ.) . Low Reverse Current : lR=5/iA(Max.) . Small Package : SC-70 2.1 ± 0.1 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximum(Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature , ) 1182 1SS322 If- ( A ) FORWARD CURRENT FORWARD VOLTAGE VK (V) REVERSE CU RRENT I R
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OCR Scan
11BVKRSE

diode MARKING A9

Abstract: transistor marking A9 Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t M a xim u m (p e a k ) re v e rs e v o lta g e IF M 300 mA A v e ra g e fo rw a rd C u rre n t IO 100 mA
Kexin
Original
diode MARKING A9 transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9

S3 DIODE schottky

Abstract: S4 DIODE schottky Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80
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OCR Scan
1S1585 2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B 1SS294 1SS377 1SS374 1S158S 10TYP
Abstract: Product specification 1SS322 Features Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t M a xim u m (p e a k ) re v e rs e v o lta g e IF M 300 mA A v e ra g e fo rw a rd C u rre n t IO 100 mA P o w e r d is s ip a tio n TY Semiconductor
Original

high frequency diode

Abstract: 15536-1 ) 1SS322 1SS357 (2-Lead) 1 2 pcs 1S S 184 1SS226 3 pcs HN 2D01F pcs 1 2 . 6-Lead s 5
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OCR Scan
2SC4116 high frequency diode 15536-1 1SS1 A1873 flowchart RN1421 RN2421 2SC2873 2SA1213 2SC3074 2SC3072
Abstract: TO SHIBA TO SHIBA DIODE 1SS322 LO W VOLTAGE HIGH SPEED SW ITCHING. 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 1.25 ± 0.1 · · · Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 3 - -E 0 - 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage -
OCR Scan

1ss283

Abstract: 495h 50 1 10 0. 6 0. 5 10 5 0 5 (l'M'w) 610D 1SS322 45 40 300 100 2 10 0. 6 5 40 25 0 10 205A
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OCR Scan
1SS239 1SS246 1SS271 1SS276 1SS281 1SS282 1ss283 495h HM 1211 1ss237 855MH 800MH 1SSZ42

1SS281

Abstract: 1SS246 50 1 10 0. 6 0. 5 10 5 0 5 (l'M'w) 610D 1SS322 45 40 300 100 2 10 0. 6 5 40 25 0 10 205A
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OCR Scan
1SS285 1SS286 HSK151 HSR276 1SS28K1 SS281 1SS293 1SS315

iss319

Abstract: 1SS283 50 1 10 0. 6 0. 5 10 5 0 5 (l'M'w) 610D 1SS322 45 40 300 100 2 10 0. 6 5 40 25 0 10 205A
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OCR Scan
iss319 HSM88WA HSR2 iSS295 HRW0203A HSM276S 100MH

1ss237

Abstract: 1SS239 50 1 10 0. 6 0. 5 10 5 0 5 (l'M'w) 610D 1SS322 45 40 300 100 2 10 0. 6 5 40 25 0 10 205A
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OCR Scan
1SS365
Abstract: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 â'¢ â'¢ â'¢ 1.25 ± 0.1 3 - 2 -E fl M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction -
OCR Scan

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS321 201 02CZ3.0 133 02DZ4.7 139 1SS322 203 02CZ3.3 133 02DZ5.1 139 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , R9 1SS392 0.30 5 40 0 S9 1SS394 0.50 100 * 1SS322 100 40 , 100 25 0 A4 1SS322 1SS294 1SS319 * 1SS384 100 10 * * 200 100 20 , ) S-MINI Max 1SS322 100 40 300 100 5 40 0.60 100 25 0 A9
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

1SS281

Abstract: 1SS283 50 1 10 0. 6 0. 5 10 5 0 5 (l'M'w) 610D 1SS322 45 40 300 100 2 10 0. 6 5 40 25 0 10 205A
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OCR Scan
55nF J--31 25MIN
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