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1SS306TE85LF Toshiba America Electronic Components Diode Switching 250V 0.1A 4-Pin SMQ T/R visit Digikey Buy

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1SS306 Datasheet

Part Manufacturer Description PDF Type
1SS306 Kexin Silicon Epitaxial Planar Type Original
1SS306 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS306 Toshiba Japanese - Diodes Original
1SS306 TY Semiconductor Silicon Epitaxial Planar Type - SOT-143 Original
1SS306 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS306 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS306 Toshiba Toshiba Shortform Catalog Scan
1SS306 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS) Scan
1SS306 Toshiba DIODE Scan
1SS306TE85L Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS306TE85LF Toshiba 1SS306TE85LF - Diode Switching 250V 0.1A 4-Pin SMQ T/R Original
1SS306TE85R Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original

1SS306

Catalog Datasheet MFG & Type PDF Document Tags

VR200

Abstract: AP-150 1SS306 1SS306 : : : : : mm SC-61 VF = 0.90V () trr = 30ns () CT = 1.5pF () JEDEC JEITA (Ta = 25°C) : 0.013 g () VRM 250 V SC­61 2­3J1A VR 200 V IFM 300 , ) (//) ( /) () () *: 150% 1 2007-11-01 1SS306 (Ta = 25°C) IF = , A 2 2007-11-01 1SS306 1. (trr) 3 2007-11-01 1SS306 · · ·
Toshiba
Original
VR200 AP-150

1SS306

Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC , Condition 1 Fig.1 Unit V µA 2001-06-07 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS306 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original

1SS306

Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-61 Maximum , Test Condition 1 Fig.1 Unit V µA 2001-06-07 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS306 RESTRICTIONS ON PRODUCT USE 000707EAA
Toshiba
Original

1SS306

Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM , Reliability Handbook. 2000-09-19 1/2 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit
Toshiba
Original
961001EAA2

1SS306

Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , .1 Unit V A 2007-11-01 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS306 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original

1SS306

Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , Condition 1 Fig.1 Unit V A 2007-11-01 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS306 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and
Toshiba
Original
Abstract: TO SHIBA TO SHIBA DIODE 1SS306 HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. 1SS306 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · · Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) : trr = 30ns (Max.) : CT = 1.5pF (Typ.) : SC-61 SYMBOL V r m M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse , b o o k . 1997-05-07 1/2 TO SHIBA If - V f IR Vr 1SS306 REVERSE VOLTAGE Ct - V r -
OCR Scan
20ANODE

1SS306

Abstract: TOSHIBA 1SS306 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS306 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm â'¢ Low Forward Voltage : Vp (2) = 0.90V (Typ.) â'¢ Fast Reverse Recovery Time : trr = 30ns (Max.) â'¢ Small Total Capacitance : C>r = 1.5pF (Typ.) â'¢ Small Package : SC-61 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 250 V , TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS306 If - VF IR - VR
-
OCR Scan
Abstract: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 (*) mA Average forward Toshiba
Original
Abstract: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. > - 0.2 â'¢ â'¢ â'¢ â'¢ Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) : trr = 30ns (Max.) : CT = 1.5pF (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , TOSHIBA S e m ico n d u cto r R e lia b ility H a n d b o o k . 1997-05-07 1/2 1SS306 TO SHIBA -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE 1SS306 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. 1 S S 3 Q6 SILICON EPITAXIAL PLANAR TYPE Unit in mm + · · · · Low Forward Voltage Fast Reverse RecoveryTime : Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) tr r =30n s (Max.) : Ct = 1.5pF (Typ.) ; SC-61 2.9 - 0.2 0.3 0.85 + M A X IM U M RATINGS (Ta = 25°C) 1. 5 0 - 0.25 0.15 , Handbook. 1997 05-07 1/2 - TOSHIBA If V f !R V r 1SS306 REVERSE VOLTAGE Vr (V) Ct - -
OCR Scan
Abstract: Product specification 1SS306 Unit: mm Features Low forward voltage :VF(2) = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * Maximum (peak) reverse voltage Reverse voltage IFSM 2 A Power TY Semiconductor
Original

1SS306

Abstract: SMD Marking X1 Diodes SMD Type Silicon Epitaxial Planar Type 1SS306 Unit: mm Features Low forward voltage :VF(2) = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * Maximum (peak) reverse voltage Reverse
Kexin
Original
SMD Marking X1 MARKING A3

1SS306

Abstract: 1SS306 . Low Forward Voltage SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in r r a n : V f = 0.92V(Typ.) + 0.2 2.9 -0.3 . Fast Reverse Recovery Time : trr= 60ns(Max.) . Small Total Capacitance . Small Package : Ct = 2 .2pF(Typ.) : SC-61 L-ES 0.55 2 EE+0.25 1.50-0.15 MAXIHUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximuin(Peak) Forward Current Average Forward Current Surge Current (10ms) Power
-
OCR Scan

1S1585

Abstract: 1SS239 Super-Mini Diodes (SOT-23MOD, SOT-143MOD.) Electrical Characteristics (Ta=25°C) Type No. Application V r(V) 80 80 80 80 80 80 80 200 80 40 200 F6 Mark Equivalent other package Type No. 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 Series Remarks IO(mA) 100 100 100 100 100 100 100 trr (ns) 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 107YP 1.6TYP Connection 1SS181 1SS184 1SS187 1SS190 1SS193 1SS196 1SS226 1SS250 1SS272 1SS294 1SS306 1SS307 1SS308 1SS309 1SS311 1SS319 1SS321
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OCR Scan
1SS239 1SV99 1SS241 1SV103 1SV147 1S1585 equivalent 1ss193 equivalent 1SS SOT mark 1SS336 1SS337 1SS344 1SS348 1SS349 1SS374

ISS302

Abstract: iss314 -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300
-
OCR Scan
1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 ISS302 iss314 1SS317 I53--

ISS302

Abstract: 1SS287 -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300
-
OCR Scan
1SS300 1SS301 ISS301 ISS312 iss355 ISS362 1SS302 1SS303 1SS304 1SS312

1SS292

Abstract: iss304 -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300
-
OCR Scan
iss304 1SS318 1SS313 1SS314 1SS356 100MH 1SS360 1SS362

high frequency diode

Abstract: 15536-1 le Product 1SS250 n M u ltip le 1SS306 Sin ile Procluct 1SS311 Sm all Product (2125 Type
-
OCR Scan
2SC4116 high frequency diode 15536-1 1SS1 A1873 flowchart RN1421 RN2421 2SC2873 2SA1213 2SC3074 2SC3072

1SS291

Abstract: 2DL15 -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300
-
OCR Scan
2DL15A 2DL15 2DF12 2DL18A DA106U P-200

pico 32195

Abstract: self oscillating royer design = WIMA MKS-4 0.22F = WIMA MKP-2 D1-D4 = TOSHIBA DUAL DIODE 1SS306. CONNECT EACH UNIT IN SERIES , -2 D1-D4 = TOSHIBA DUAL DIODE 1SS306. CONNECT EACH UNIT IN SERIES. D5-D6 = 1N4148 * = 1% METAL FILM , WIMA MKP-2 D1-D4 = TOSHIBA DUAL DIODE 1SS306. CONNECT EACH UNIT IN SERIES. D5-D6 = 1N4148 * = 1 , -4, COILTRONICS T1 = 210605, COILTRONICS 1F = WIMA MKS-4 0.22F = WIMA MKP-2 D1-D4 = TOSHIBA DUAL DIODE 1SS306 , *1% METAL FILM RESISTOR C1: RUBYCON 330FW13AK6325 AN118 F22 D1: TOSHIBA DUAL DIODE 1SS306
Linear Technology
Original
pico 32195 self oscillating royer design tektronix 454a LP5010-334MLB Royer resonant LT3401 100VP-P AN118-47 AN118-48

2DL15A

Abstract: 1SS287 -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300
-
OCR Scan
J--31 25MIN
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