500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
1SS301SU,LF Toshiba America Electronic Components X34 PB-F SOT-323 M8 DIODE (LF), IFM=300MA visit Digikey Buy
1SS301,LF Toshiba America Electronic Components DIODE ARRAY GP 80V 100MA USM visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 1SS301(T5LSUMIS,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS301(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : €0.0286 Price Each : €0.0571
Part : 1SS301,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0180 Price Each : $0.0219
Part : 1SS301LF(B Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS301SU,LF(D) Supplier : Toshiba Manufacturer : America II Electronics Stock : 9,000 Best Price : - Price Each : -
Part : 1SS301,LF Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 3,000 Best Price : $0.0405 Price Each : $0.1350
Part : 1SS301(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 9,000 Best Price : $0.0560 Price Each : $0.0597
Part : 1SS301(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 6,300 Best Price : $0.5430 Price Each : $0.6790
Part : 1SS301,LF(T Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,925 Best Price : $0.0529 Price Each : $0.0771
Shipping cost not included. Currency conversions are estimated. 

1SS301 Datasheet

Part Manufacturer Description PDF Type
1SS301 Kexin Ultra High Speed Switching Application Original
1SS301 Toshiba Silicon diode for ultra high speed switching applications Original
1SS301 Toshiba Japanese - Diodes Original
1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original
1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original
1SS301 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS301 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS301 Toshiba DIODE Scan
1SS301,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 3 USM Original
1SS301SU,LF Toshiba 1SS301SU - X34 PB-F SOT-323 M8 DIODE (LF), IFM=300MA Original
1SS301TE85L Toshiba 1SS301 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS301TE85LF Toshiba 1SS301TE85LF - Diode Switching 85V 0.3A 3-Pin USM T/R Original
1SS301TE85R Toshiba 1SS301 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original

1SS301

Catalog Datasheet MFG & Type PDF Document Tags

1SS301

Abstract: 1SS301 1SS301 : mm : VF (3) = 0.90V () : trr = 1.6ns () : CT = 0.9pF () JEDEC JEITA (Ta = 25°C) : 0.006 g () VRM 85 V 1­2P1B VR 80 V IFM 300* mA IO 100 , 1SS301 (Ta = 25°C) VF (1) 0.60 VF (2) IF , ) V A 2 2007-11-01 1SS301 1. (trr) 3 2007-11-01 1SS301 · ·
Toshiba
Original
Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm Small package Low forward voltage Small total capacitance : SC-70 : VF (3) = 0.92 V (typ.) : CT = 0.9 pF (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Maximum Ratings (Ta , 3.0 4.0 µA pF ns V Unit 1 2002-03-12 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking 2 2002-03-12 1SS301 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is Toshiba
Original

1SS301

Abstract: TOSHIBA 1SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm â'¢ Small Package : SC-70 â'¢ Low Forward Voltage : Vp (3) = 0.90V (Typ.) â'¢ Fast Reverse Recovery Time : trr= 1.6ns (Typ.) â'¢ Small Total Capacitance : CT = 0.9pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) 2.1 ±0.1 1.25 + 0.1 I-â'"-1 0 0 + 1 co 0 2.0 ±0.2 1.310.1 I 0.65 0.65 I , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS301 If - VF IR - Vr
-
OCR Scan
ANODE1SS301-13 961001EAA2

1SS101

Abstract: 1SS101 DIODE 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard , VRSM 1SS101 1SS201 1SS301 Units 20 30 40 14 21 28 20 30 40 , AND CHARACTERISTIC CURVES 1SS101 THRU 1SS301 AVERAGE FORWARD CURRENT AMPERES FIG
XIN Semiconductor
Original
1SS101 DIODE Xin Semiconductor solar blocking diode diode case R-1 1ss20

1SS301

Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum , Forward voltage Reverse current Test Condition 1 Unit V µA 2001-06-07 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS301 RESTRICTIONS ON
Toshiba
Original

1SS301

Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF (3) = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ , 2002-03-12 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2002-03-12 1SS301 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

1SS301

Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : VF (3) = 0.9 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Absolute , 2007-11-01 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS301 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original
Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF (3) = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward Toshiba
Original
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS301 1 SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 2.1 +0.1 · · · · Small Package Low Forward Voltage Fast Reverse RecoveryTime : Small Total Capaçitançe : SC-70 : Vjr (3) = 0.90V (Typ.) tj-j*^ 1.6ns (Typ.) ;C V f1-0,9pF (Typ,) 2 3 - 1.25 + 0.1 ES r-» o M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum , Handbook. 1997-05-07 1/2 TOSHIBA 1SS301 ip - vf ir - vr R E V E R SE VOLTAGE -
OCR Scan
ANODE1SS301

1SS301

Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : VF (3) = 0.9 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Absolute , Reverse current Test Condition 1 Unit V A 2007-11-01 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS301 RESTRICTIONS ON PRODUCT USE
Toshiba
Original
Abstract: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit in mm Small package : SC-70 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM , Reliability Handbook. 2000-09-19 1/2 1SS301 Fig.1 Reverse Recovery Time (trr) Test Circuit Toshiba
Original
Abstract: 1SS301 TO SHIBA 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. â'¢ â'¢ â'¢ â'¢ Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp (3) = 0.90V (Typ.) : trr = 1.6ns (Typ.) : CT = 0.9pF (Typ.) 1.25 ±0.1 32 -EB M A X IM U M RATINGS (Ta = 25 , Handbook. 1997-05-07 1/2 1SS301 TO SHIBA If - V f IR - V r REVERSE VOLTAGE V r (V) Ct -
OCR Scan
ANODE1SS301100

XL SC-70

Abstract: 1SS301 1SS301 . Small Package . Low Forward Voltage . Small Total Capacitance SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. :SC-70 :VF= 0.9V(Typ.) Unit in mm . Fast Reverse Recovery Time : trr= l ·6ns(Typ.) :Ct = 0 .9pF(Typ.) 2 -ES MAXI M U M RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage SYMBOL vrm vr RATING 85 80 300* 100* 2* 100 125 -55-125 UNIT V V mA , Marking B 3 TT 1156 1SS301 Ir - vR I F ( mA) FORWARD CURRENT c? - v R C T (pF) f = 1
-
OCR Scan
XL SC-70
Abstract: Product specification 1SS301 Features Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter S ym bol U nit V RM M axim um (peak) reverse voltage R ating 85 V R everse voltage VR 80 V M axim um (peak) forward current IF M 300(*) mA A verage forward current IO mA 2(*) A P P ower dissipation 100(*) I F SM TY Semiconductor
Original
Abstract: TO SHIBA TOSHIBA DIODE 1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS. 1 SS301 SILICON EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 1.25 ±0.1 · · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp (3) = 0.90V (Typ.) : trr = 1.6ns (Typ.) : CT = 0.9pF (Typ.) 32 -ES M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT , TOSH IBA Sem iconductor Reliability Handbook. 1997-05-07 1/2 TO SHIBA 1SS301 If - V f -
OCR Scan

MARKING b3

Abstract: smd b3 Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter S ym bol U nit V RM M axim um (peak) reverse voltage R ating 85 V R everse voltage VR 80 V M axim um (peak) forward current IF M 300(*) mA A verage forward current IO mA 2(*) A P
Kexin
Original
MARKING b3 smd b3

S3 DIODE schottky

Abstract: S4 DIODE schottky Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80
-
OCR Scan
1S1585 2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B 1SS294 1SS377 1SS374 1S158S 10TYP

1SS292

Abstract: iss304 0. 5 80 4 4 m^W-hr (ll-V Hi) 205C 1SS301 JS2 90 80 450 150 4 1. 2 100 0. 5 80 4 4 im^r
-
OCR Scan
1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 iss304 I53--

2DL15

Abstract: 1SS287 0. 5 80 4 4 m^W-hr (ll-V Hi) 205C 1SS301 JS2 90 80 450 150 4 1. 2 100 0. 5 80 4 4 im^r
-
OCR Scan
2DL15A 2DL15 ISS302 1SS303 1SS304 1SS305 1SS306 1SS311 1SS312

ISS302

Abstract: iss314 0. 5 80 4 4 m^W-hr (ll-V Hi) 205C 1SS301 JS2 90 80 450 150 4 1. 2 100 0. 5 80 4 4 im^r
-
OCR Scan
2DF12 iss314 1SS317 1SS332 ISS301 iss355 1SS313 1SS314 1SS356 100MH 1SS360 1SS362

diode Z47

Abstract: S360 DIODE 1SS300 1SS301 1SS302 - _ HN1D01FU HN1D02FU - - - - - - _ - - - - - - - - - 1SS308
-
OCR Scan
02CZ5 diode Z47 S360 DIODE Z3.3 Z5.6 z43 diode 1SS193 1SS196 1SS187 1SS190 1SS181 1SS184
Showing first 20 results.