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1SS300 Datasheet

Part Manufacturer Description PDF Type
1SS300 Kexin Ultra High Speed Switching Application Original
1SS300 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) Original
1SS300 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS300 Toshiba Switching Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80) Original
1SS300 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original
1SS300 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS300 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS300 Toshiba DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) Scan
1SS300 Toshiba DIODE Scan
1SS300,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 3 USM Original
1SS300TE85L Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS300TE85L Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) T/R Original
1SS300TE85R Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original

1SS300

Catalog Datasheet MFG & Type PDF Document Tags

TOSHIBA DIODE

Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.92V (typ.) : CT = 2.2pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Maximum Ratings , 2006-06-13 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking A3 2 2006-06-13 1SS300 3 2006-06-13 1SS300 4 2006-06-13 Toshiba
Toshiba
Original
TOSHIBA DIODE

1SS300

Abstract: 1SS300 1SS300 : mm : VF (3) = 0.92V () : trr = 1.6ns () : CT = 2.2pF () JEDEC JEITA (Ta = 25°C) : 0.006g () VRM 85 V 1­2P1A VR 80 V IFM 300* mA IO 100 , 1SS300 (Ta = 25°C) VF (1) 0.61 VF (2) IF , ) V A 2 2007-11-01 1SS300 1. (trr) 3 2007-11-01 1SS300 · ·
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Original

1SS300

Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications l Small package : SC-70 l Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ , Forward voltage Reverse current Test Condition 1 Unit V µA 2001-06-07 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking 2 2001-06-07 1SS300 RESTRICTIONS ON PRODUCT
Toshiba
Original

1SS300

Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute , current Test Condition 1 Unit V A 2007-11-01 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking A3 2 2007-11-01 1SS300 3 2007-11-01 1SS300
Toshiba
Original

1SS300

Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum , Forward voltage Reverse current Test Condition 1 Unit V µA 2001-06-07 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking 2 2001-06-07 1SS300 RESTRICTIONS ON PRODUCT
Toshiba
Original
Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Unit in mm Small package : SC-70 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR , Reliability Handbook. 2000-09-19 1/2 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Toshiba
Original
961001EAA2

1SS300

Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) Fast , Forward voltage Reverse current Test Condition 1 Unit V A 2007-11-01 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking A3 2 2007-11-01 1SS300 3 2007-11-01 1SS300 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

1SS300

Abstract: TOSHIBA 1SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS300 ULTRA HIGH SPEED SWITHING APPLICATION. â'¢ Small Package : SC-70 â'¢ Low Forward Voltage : Vp (3) = 0.92V (Typ.) â'¢ Fast Reverse Recovery Time : trr= 1.6ns (Typ.) â'¢ Small Total Capacitance : Ct = 2.2PF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 85 V , . 1997-05-07 1/2 TOSHIBA 1SS300 If - VF IR - Vr
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OCR Scan
Abstract: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute , 2014-03-01 1SS300 Fig.1 Reverse Recovery Time (trr) Test Circuit Marking A3 2 2014-03-01 1SS300 3 2014-03-01 1SS300 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
Original
Abstract: 1SS300 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS300 ULTRA HIGH SPEED SWITHING APPLICATION. â'¢ â'¢ â'¢ â'¢ Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp (3) = 0.92V (Typ.) : trr = 1.6ns (Typ.) : CT = 2.2pF (Typ.) Unit in mm 1.25 ± 0.1 o c + M A X IM U M RATINGS (Ta = 25°C) RATING UNIT V 85 V , in the TOSH IBA Sem iconductor Reliability Handbook. 1997-05-07 1/2 1SS300 TO SHIBA -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE ULTRA HIGH SPEED SWITHING APPLICATION. 1SS300 1 SS3Q0 SILICON EPITAXIAL PLANAR TYPE U n it in mm · · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vjr (3) = 0.92V (Typ.) : tj*^ 1.6ns (Typ.) ; CVf1-2,2pF (Typ,) SYMBOL V rm Vr Ifm 2.1 ± 0.1 1.25+0.1 -a 2 MAXIMUM RATINGS (Ta = 25°C) RATING UNIT 85 V 80 , Handbook. 1997-05-07 1/2 TOSHIBA 1SS300 I f - Vf Ir - V R REVERSE VOLTAGE Vr (V -
OCR Scan

1SS300

Abstract: 1SS300 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. SC-70 Unit in mm 21 ±0.1 VF=0.92V(Typ.) t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . ) 1.25 ± 0 . 1 2 - -E 0 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Ilaximum(Peak) Reverse Voltage Reverse Voltage Haxlmum(Peak , 4.0 PF ns ( J A V UNIT Marking n A 3 B ET 1154 1SS300 Fig. TOTAL 1 REVERSE
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OCR Scan

17520 transistor

Abstract: capacitor electrolyte BIC1222 18pH , 3.6A 1SS300 D1FS4A 25V, 220|jF 25V, 0.047uF 25V, 0.1 |jF 50V, 1000pF 10V, 680pF 25V, 1000pF , 1SS300 M2FM3 25V, 470|jF 25V, 0.047pF 25V, 0.1uF 50V, 1000pF 10V, 1200[jF 25V, 1000pF 25V, 0.1 uF 0.1W , . Nomenclature Output current example 2A 3A BIC1222 3 3 UH, 3.6A 1SS300 D1FS4A 25V, 680 U F 1820mA 25V, 0.047 , Output current example 1A BIC1222 4 7 m H, 3A 1SS300 D1FS4A 25V, 470 M F 1250mA 25V, 0.047 u F 25V, 0 .1 , Resistance Resistance Resistance BIC1222 47 uH , 2.4A 1SS300 D1FS4A 25V, 330 U F 1030mA 25V, 0.047 u F 25V
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OCR Scan
17520 transistor capacitor electrolyte BDD20050412-050704

MQ 5 Smoke sensor

Abstract: 25-12V Resistance Resistance BIC1422 68pH, 1.2A 1SS300 D1FS6 50V. 100pF 25V, 0.047uF 25V, 0.1 pF 25V, 1000PF 10V , BIC1422 22|j H, 3.6A 1SS300 D1FS6 50V, 270uF 25V, 0.047pF 25V, 0.1pF 25V, 1000PF 10V, 1200jjF 25V, 1000PF , 0.1W, 1Kohm±0.5% 0.1W, 1Kohm±0.5% 0.1W, 1Kohm±0.5% 0.1W, 1Kohm±0.5% BIC1422 47pH. 2.4A 1SS300 D1FS6 50V , . 1Mohm BIC1422 33pH, 3 ,6A 1SS300 D1FS6 50V, 270|j F 1580mA 25V, 0.047pF 25V, 0.1 pF 25V, 1000PF 16V,1000(jF 23mohm 25V, 1000PF 50V, 0.01 (JF 0.1 W, 1Mohm 3A BIC1422 120jjH. 1.2A 1SS300 D1FS6 Output
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OCR Scan
MQ 5 Smoke sensor 25-12V BD20050412-050704

BIC1422

Abstract: 8V-40V DC to 24V dC converter circuit diagram Resistance (parallel) Resistance Resistance Resistance Resistance BIC1422 68uH, 1.2A 1SS300 D1FS6 50V, 1OOmF , % 0.1 W . 100Kohm 0.1W, 10Kohm 72mohm 724mA BIC1422 22yH, 3.6A 1SS300 D1FS6 50V, 270uF 25V, 0.047uF 25V , |jH, 1.2A 1SS300 D1FS6 50V, 100uF 724mA 25V, 0.047uF 25V, 0.1 uF 25V. 1000PF 16V, 330uF 72mohm 25V. 1000PF 50V, 0.01 uF 0.1W, 1Mohm BIC1422 4 7 u H .3 A 1SS300 D1FS6 50V, 220uF 1370mA 25V, 0.047uF 25V, 0.1 uF 25V, 1000PF 16V, 680gF 38mohm 25V, 1000PF 50V, 0.01 jjF 3A BIC1422 33gH, 3 ,6A 1SS300 D1FS6
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OCR Scan
DC8-40V 8V-40V DC to 24V dC converter circuit diagram bd2005 Black Gate rubycon 470uf 10v ELECTROLYTE capacitor IR remote control switch circuit diagram BD20050412-030523
Abstract: T O SH IB A TO SHIBA DIODE 1SS300 ULTRA HIGH SPEED SW ITHING APPLICATIO N. 1 SS300 SILICON EPITAXIAL PLANAR TYPE Unit in mm 1.25 ± 0.1 · · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp (3 ) = 0.92V (Typ.) : trr = 1.6ns (Typ.) : CT = 2.2pF (Typ.) SYMBOL Vr m Vr !f M :FSM p Tj Tstg !0 OE2 oc + -E 3 M A X IM , ility H a n d b o o k . 1997-05-07 1/2 T O SH IB A 1SS300 If - V f IR - V r -
OCR Scan

17520 transistor

Abstract: ax3217 :1 W , 10KQ 23m Q x2 Rubycon BIC1222 18uH. 3.6A 1SS300 D1FS4A 25V, 220pF 25V,0.047pF 25V, 0.1 pF 50V, 1000pF 760mA»2 BIC1222 10uH .6A 1SS300 M2FM3 25V, 470pF 25V. 0.047uF 25V, 0.1pF 50V. 1000pF 1250mA»2 , voltage 8V-12V Output current example 2A 3A BIC1222 33 uH . 3.6A 1SS300 D1FS4A 25V. 680 u F 1820mA , BIC1222 Output current example 1A BIC1222 47 u H ,3A 1SS300 D1FS4A 25V. 470 u F 1250mA 25V, 0.047 m F , . 2.4A 1SS300 D1FS4A 25V, 330 U F 1030mA 25V, 0.047 U F 25V, 0.1 u F 50V, 1000pF 16V, 680 u F 38m S 3 25V
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OCR Scan
ax3217 DC8-20V BDD20050412-030514
Abstract: Product specification 1SS300 Features Small package Low forward voltage :VF(3) = 0.92 V(Typ) Fast reverse recovery time Small total capacitance :trr = 1.6 ns (Typ) :CT = 2.2 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current I FM 300(*) mA Average forward current IO 100(*) mA Maxim um (peak) reverse voltage Surge current (10 m s) I FSM 2 TY Semiconductor
Original

maxim package marking

Abstract: MARKING A3 Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF(3) = 0.92 V(Typ) Fast reverse recovery time Small total capacitance :trr = 1.6 ns (Typ) :CT = 2.2 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current I FM 300(*) mA Average forward current IO 100(*) mA Maxim um (peak) reverse
Kexin
Original
maxim package marking MARKING A3

S3 DIODE schottky

Abstract: S4 DIODE schottky Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80
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OCR Scan
1S1585 2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B 1SS294 1SS377 1SS374 1S158S 10TYP

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS295 174 015AZ15 127 02CZ47 133 1SS300 176 015AZ16 127 02DZ2.0 139 , 1SS300 HN4D01JU HN1D01FU 1SS181 1SS308 HN1D01F 1SS361FV 1SS361F 1SS361 , 1.2 100 4.0 0 4 A3 1SS300 1SS181 1SS361 100 80 * * 300 100 0.5 , Max 1SS300 100 80 * 300 * 100 0.5 80 1.2 100 4 0 4 A3 , 0.30 1SS300 1SS193 1SS272 (A-) 5 0.50 100 * 1SS402 100 20 100 50 0.5 20
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

induction cooker circuit diagram

Abstract: TC7600FNG Protection Diodes Switching Diodes 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min , protection//200 mW (4 in 1) 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min) Schottky , Protection Diodes Switching Diodes 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min , Circuit Protection ESD Protection Diodes Switching Diodes 1SS193/1SS181 (S-Min) 1SS370/1SS300 , protection//200 mW (4 in 1) 1SS193/1SS181 (S-Min) 1SS370/1SS300 (USM) 1SS344/1SS377 (S-Min) Schottky
Toshiba
Original
induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG mosfet induction heater SCE0013D
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