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Part : 1SS294(T5L,F,T) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS294(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0263 Price Each : $0.0364
Part : 1SS294(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : €0.0557 Price Each : €0.1114
Part : 1SS294(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS294,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0385 Price Each : $0.0470
Part : 1SS294,LF(T Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0191 Price Each : $0.0264
Part : 1SS294(TE85L) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,800 Best Price : $0.9440 Price Each : $1.12
Part : 1SS294(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 5,800 Best Price : $1.43 Price Each : $1.62
Part : 1SS294,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,990 Best Price : $0.0620 Price Each : $0.1550
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1SS294 Datasheet

Part Manufacturer Description PDF Type
1SS294 EIC Semiconductor Schottky Barrier Diodes Original
1SS294 Kexin Low Voltage High Speed Switching Original
1SS294 Toshiba DIODE SCHOTTKY DIODE 45V 0.1A 3(1-3G1B) Original
1SS294 Toshiba Diode - Silicon Epitaxial Schottoky Barrier Type Original
1SS294 Toshiba Japanese - Diodes Original
1SS294 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original
1SS294 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS294 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS294 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS294 Toshiba DIODE Scan
1SS294S,LF Toshiba 1SS294S - X34 PB-F S-MINI SHOTTKY BARRIER DIODE (LF), IFM=300MA Original
1SS294T5LFT Toshiba 1SS294 - Schottky (Diodes & Rectifiers) Diode Original
1SS294T5LT Toshiba 1SS294T5LT - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original
1SS294TE85L Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294TE85L2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294(TE85L,F) Toshiba 1SS294 - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original
1SS294TE85R Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294TE85R2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original

1SS294

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS294 1SS294 : mm : SC-59 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 45 V , Tstg 55125 °C : (//) ( / ) () () 1 2007-11-01 1SS294 (Ta = 25 , CT VR = 0, f = 1MHz 18 25 pF 2 2007-11-01 1SS294 3 2007-11-01 1SS294 · · · · "" · · · · Toshiba
Original
236MOD
Abstract: Mark A3 B3 C3 Similar 1S1585 1S1585 1S1585 1SS294 Remarks Anode common Cathode common Series , 1S1585 1SS294 1SS377 2SS2S0 1SS374 1SS377 1S1585 1S158S 1S1585 1S1585 1S1585 FS Schottky barrier Series , EE33 S3 1SS294 Schottky barrier 1SS373 Low VF switching 10 100 S4 1SS367 -
OCR Scan
2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B MARK MQ 1SS300 1SS301 1SS302 1SS322 1SS357 1SS370
Abstract: 1SS272 169 015AZ12 127 02CZ39 133 1SS294 172 015AZ13 127 02CZ43 133 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , 100 5 40 0.6 100 18 0 A9 1SS357 1SS294 ×2 * HN2D01JE 100 80 , 40 300 100 5 40 0.60 100 25 0 S3 1SS294 0.30 5 * 1SS367 Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5uA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , V Marking 1 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT Toshiba
Original
000707EAA
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5uA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA Toshiba
Original
TOSHIBA DIODE
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE 20070701 Toshiba
Original
Abstract: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features · Small surface mounting type · Low reverse current · Low forward voltage 3 1 Absolute Maximum Ratings (Ta = 25 OC) Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit Maximum Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current IO , 1SS294 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company Semtech Electronics
Original
transistor XM diode marking code xm marking 724 diode Semtech sot-23 marking code
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5uA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , information contained herein is subject to change without notice. 2000-09-11 1/2 1SS294 Toshiba
Original
961001EAA2
Abstract: TOSHIBA TOSHIBA DIODE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0.3 + 0.25 1. 5 - 0.15 Low Forward Voltage : Vp (3) = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô E2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum , w itho ut notice. 1997-05-07 1/2 TOSHIBA 1SS294 ip - vf IR - Vr FORWARD -
OCR Scan
Abstract: TOSHIBA 1SS294 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. â'¢ Low Forward Voltage : Vp (3) = 0.54V (Typ.) â'¢ Low Reverse Current : Ir = 5/^A (Max.) â'¢ Small Package : SC-59 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 45 V Reverse Voltage Vr 40 V Maximum (Peak , 1SS294 IF - vf IR - Vr A /A -
OCR Scan
Abstract: 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage . Low Reverse Current . Small Package SC-59 SILICON EPITAXIAL PLANAR TYPE Unit in mm V f = 0 .54V(Typ.) lR=5MA(Max.) +0.5 2.5 -0.3 +0.25 1.5-0.15 03 1 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximura(Peak) Forward Current Average Forward Current Power Dissipation , 1SS294 -
OCR Scan
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5ÂuA (max) l Small package : SCâ'59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 150 Toshiba
Original
Abstract: Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 , CHARACTERISTIC CURVES ( 1SS294 ) FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS. FORWARD VOLTAGE EIC Semiconductor
Original
SOT23 DIODE marking CODE AV
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE · Toshiba Toshiba
Original
Abstract: 1SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 â'¢ â'¢ â'¢ + 0.25 , 1.5-0.15 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage , VOLTAGE Vf (V) REVERSE CURRENT Ir (A) REVERSE VOLTAGE 1SS294 -
OCR Scan
Abstract: U2 uPC2933T D4 1SS294 SLR-322-MG 1 C7 47uF/16V 3 RESETB C3 47uF/16V POWER 2 D1 1SS294 CP9 0.1uF TTP1 TP1 +3.3V GND TP TTP C2 12pF C1 12pF 3.3v , ,JP1M0, JP2M1 3 2 1 3 2 1 D3 1SS294 D2 1SS294 GND 5v 1 2 RESET 4 , , D3, D4 D 1SS294 4 4 Y1 AT-49(30MHz) 1 5 R1, R3, R4, R9, R12 R NEC
Original
PD720122 ET-0138 S15829J MNR35P3RJ103 SRA16VB47M 6MCM106MA 8D139 BLM41AF800SN1 Y1 XTAL 30Mhz S16801JJ1V0UM00 S16801JJ1V0UM M5A02 S16685J
Abstract: SDA 5v R44 10K D2 1SS294 R37 5.6K D1 10k 8 7 6 5 10K C1 2.2uF/16V , C11 10uF/16V C12 0.01uF TP2 5v D5 1SS294 5v 1 2 3 4 1 2 3 U3 IN OUT , 1SS294 Toshiba 5 OMRON 1 IDE 20 QZF-B4LFDG7A2K Honda 1 USB XG8W , D5 1SS294 12 FG FG 4 3 2 1 CN1 UBB-4R-D10T-1 POWER 3 4 FG C14 2.2uF/50V CPU3.3 1 2 8 7 6 5 5v R44 10K D2 1SS294 R37 5.6K CP1 0.1uF NEC
Original
S16429JJ2V0UM PD720130 RK73K2A GRM40B103K50 omron cp10 SRA16VB22M bpy 79 34-FG ET-0148 PD720130USB2 S16429JJ2V0UM00 S16302J
Abstract: 5 4 3 2 1 3.3V 3.3V 3.3V U2 A0 A1 A2 GND VCC WP SCL SDA D1 1SS294 R1 10k 8 7 6 5 ST M24C32 R3 R4 C2 47 12pF C1 CP1 D R5 1.5k P 1 2 3 4 12pF C3 22uF/16V 10k 0.1uF D N Y1 30MHz 5V 2.5V 3.3V R7 1K R13 2 3 1 4 FG 39(1%) 2.43K(1%) FG 39(1%) R12 FG R11 4 3 2 , 1SS294 DA0 DA2 CS0B CS1B 8 7 6 5 R26 5.6K NMR14 33ohm 1 2 3 4 5 6 7 8 9 10 NEC
Original
BLM21PG600SN1 XG4C-4031 r2533 ST M24C32 TANTAL R-1782 F/16V VDD25 VDD33 IDED10 IDED11 IDED12
Abstract: TO SHIBA TO SHIBA DIODE 1SS294 LO W VOLTAGE HIGH SPEED SW ITCHING. 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0 .3 + 0.25 1 .5 - 0 .1 5 · · · Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage , CURRENT IR (A) REVERSE VOLTAGE 1SS294 -
OCR Scan
Abstract: 5 4 3 SCL 3.3V 3.3V DPC R2 10k R1 10k 10k DPC U2 8 7 6 5 JP5 D JP1 XG8W-0231 2 R3 + + R6 1K 1 1 JP2 XJ8C-0311 3 2 1 3.3V 2 1 2 3 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 D 3.3V M24C32-WBN6 R33 10k XJ8C-0311 CP1 D1 1SS294 0.1uF CMB_STATE R5 1.5k RESET JP4 10k 2 , 8 7 6 5 5.6K R20 1SS294 IDEIORB 82 IDERDY 22 IDEDAKB R22 82 R25 NEC
Original
B3F-1002 R3012 SLR-322-R TANTAL R UPD720 NEC TANTAL NEC R18 PD720133 IDED13 IDED14 IDED15 XG8W-0431
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