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Part : 1SS193(TE85L. F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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Part : 1SS193 Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 9,900 Best Price : - Price Each : -
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Part : 1SS193(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 56,917 Best Price : $0.0324 Price Each : $0.0511
Part : 1SS193,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,000 Best Price : $0.0348 Price Each : $0.0348
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1SS193 Datasheet

Part Manufacturer Description PDF Type
1SS193 Galaxy Semi-Conductor Holdings Surface mount switching diode Original
1SS193 Kexin Ultra High Speed Switching Application Original
1SS193 Shenzhen Yongerjia Electronic Switching Diode Original
1SS193 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1B) Original
1SS193 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS193 Toshiba Diode Silicon Epitaxial Planar Type Original
1SS193 Toshiba Japanese - Diodes Original
1SS193 Transys Electronics Plastic-Encapsulated Diodes Original
1SS193 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original
1SS193 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS193 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS193 Toshiba Toshiba Shortform Catalog Scan
1SS193 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan
1SS193S,LF Toshiba 1SS193S - X34 PB-F SOT-23 M8 DIODE (LF), IFM=300MA Original
1SS193T5LFT Toshiba 1SS193 - Rectifiers Diode Original
1SS193(T5L,M) Toshiba 1SS193 - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
1SS193T5LT Toshiba 1SS193T5LT - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
1SS193TE85L Toshiba 1SS193 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS193TE85L2 Toshiba 1SS193 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS193TE85LF Toshiba 1SS193TE85LF - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
Showing first 20 results.

1SS193

Catalog Datasheet MFG & Type PDF Document Tags

tbf819

Abstract: mg50g2cl4 2SC3886A 2SB676 2SB1481 2SC4201 2SC4605 1S1553 1SS193 2SC2667 1SV282 2SC2693 2SC2711 2SC3887A 2SC3884A 1S1554 1SS193 2SB679 2SB1411 2SC4202 2SC4605 1S1555 1SS193 2SC366 (G) TM 2SC1959 2SC4255 2SC4252 1S1585 1SS193 2SC367 (G) TM 2SC1959 2SC4318 1S1586 1SS193 2SC372 (G) TM 2SC1815 2SC4392 2SC5107 1S1587 1SS193 2SC373 (G) TM 2SC1815 2SC4560 2SC4542 1S1588 1SS193
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Original
MG25N6EK1 MG25J2YS40 MG30G2DL1 THS106A MG30T1AL1 THS114 tbf819 mg50g2cl4 GT60J101 2SD1678 ths102a 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3

f3 diode sot23

Abstract: marking f3 sot-23 BL Galaxy Electrical Production specification Surface mount switching diode 1SS193 , INFORMATION Type No. Marking 1SS193 Package Code F3 SOT-23 MAXIMUM RATING @ Ta=25 unless , Production specification 1SS193 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Surface mount switching diode 1SS193 PACKAGE OUTLINE Plastic surface mounted package SOT , : mm PACKAGE INFORMATION Device Package Shipping 1SS193 SOT-23 3000/Tape&Reel
BL Galaxy Electrical
Original
f3 diode sot23 marking f3 sot-23 F3 SOT-23 DIODE F3 sot23 CJ SOT23 BL/SSSDC005 3000/T
Abstract: Product No. 1SS193-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , ' suffix to part number above. For example, 1SS193-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS193 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High , . Revision: April, 2012 www.wontop.com 1 ® 1SS193 WON-TOP ELECTRONICS Electrical , ® 1SS193 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) F3 F3 Won-Top Electronics
Original
MIL-STD-202

1SS193

Abstract: J-STD-020D 1SS193 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 , otherwise specified Characteristic Symbol 1SS193 Units Non-Repetitive Peak Reverse Voltage , nS REV. 3, Oct-2010, KSYR09 RATING AND CHARACTERISTIC CURVES 1SS193 Fig.1 Typical Forward , .4 Reverse Recovery Time vs. Forward Current Device Marking : Device P/N 1SS193 Marking F3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS193 Important Notice and Disclaimer LSC
Lite-On Semiconductor
Original
J-STD-020D 2002/95/EC

1SS193

Abstract: 1SS193 1SS193 : : : : : mm SC-59 VF = 0.9V () trr = 1.6ns () CT = 0.9pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1B VR 80 V IFM , ) (//) ( /) () () 1 2007-11-01 1SS193 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS193 1. (trr) 3 2007-11-01 1SS193 ·
Toshiba
Original
Abstract: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application z Small package z Low forward voltage z Small total capacitance : SC-59 : VF (3) = 0.9V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum , pF ns V Unit Marking 1 2007-11-01 1SS193 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS193 RESTRICTIONS ON PRODUCT USE · The information contained herein Toshiba
Original

F3 SOT-23 DIODE

Abstract: 1SS193 1SS193 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , @t=10ms Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS193 Units V V mA mA A mW 85 80 300 100 2 150 125 , -2010, KSYR09 RATING AND CHARACTERISTIC CURVES 1SS193 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Device Marking : Device P/N 1SS193 Marking F3 Equivalent Circuit Diagram Lite-On
Lite-On Semiconductor
Original

1SS193

Abstract: 1ss193 equivalent 1SS193 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , VR IFM IO IFSM PD TJ TSTG 1SS193 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS193 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , Marking : Device P/N 1SS193 Marking F3 Equivalent Circuit Diagram Lite-On Semiconductor
Lite-On Semiconductor
Original
1ss193 equivalent

1SS193

Abstract: 1SS193 Switching Diodes SOT-23 1. ANODE 2. N.C. 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Maximum Ratings @TA=25 Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Symbol VRM VR IFM IO PD TJ TSTG Dimensions in inches and (millimeters) Limits 85 80 300 100 150 125 -55-125 Unit V V mA mA mW , =1mA IF=10mA IF=100mA VR=30V VR=80V VR=0,f=1MHz IF=IR=10mA,Irr=0.1×IR Conditions 1SS193 Switching
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Original

1SS193

Abstract: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum , µA Marking 1 2001-06-07 1SS193 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS193 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original
Abstract: MCC Features · · Low Leakage Current Surface Mount SOT-23 Package omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS193 150mW Switching Diodes SOT-23 A D C Maximum Ratings · · Operating Temperature: -55OC to +150OC Storage Temperature: -55OC to +150 OC Maximum Ratings Reverse Voltage Forward Current Power Dissipation @ TA=25OC Storage Temperature Range Junction Temperature , trr 4.0ns .037 .950 .037 .950 Revision: 3 www.mccsemi.com 2002/12/31 1SS193 MCC Micro Commercial Components
Original
Abstract: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current Toshiba
Original

1SS193

Abstract: TO-236MOD 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , . 2000-09-13 1/2 1SS193 Fig.1 Reverse recovery time (trr) test circuit 961001EAA2' · The
Toshiba
Original
TO-236MOD

1SS193

Abstract: TOSHIBA 1SS193 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS193 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) Ijr = 1mA â'" 0.60 â'" V VF (2) IF = 10mA â'" 0.72 â'" VF (3) IF = 100mA â'" 0.90 1.20 Reverse Current !R(1) VR = 30V â'" â'" 0.1 juA Vr = 80 V â'" â , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS193 If - VF ir - vr < fa 100m 100/j 0.2 0.4 0.6 0.8
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OCR Scan

1SS193

Abstract: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ , mA Marking 1 2001-06-07 1SS193 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS193 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS193 157 015AZ8.2 127 02CZ27 133 1SS196 160 015AZ9.1 127 02CZ30 133 , (HN2D01FU) 1SS193 (HN2D02FU) 1SS196 1SS362FV 1SS387 80 100 80 200 HN2D01JE , ) CT (pF) trr (ns) USC S-MINI 4 C1 1SS352 1SS193 0 S3 , 100 0.5 80 1.2 100 0.5 0 1.6 A1 1SS352 1SS193 ×2 IF Max (mA) Typ , 1SS352 200 80 200 100 0.5 80 1.20 100 3 0 4 C1 1SS193 1SS403
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

marking C3 sot-23

Abstract: 1SS226 c3 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , 1SS190 E3 3 2 1SS193 F3 3 1 1SS196 G3 3 2 1SS226 C3 3 1 2
Weitron
Original
1SS181 1SS184 1SS187 marking C3 sot-23 1SS226 c3 top marking c3 sot23 MARKING B3 SOT-23 1SS184B3 1SS190/1SS193/1SS196/1SS226
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS193 1SS193 ULTRA HIGH SPEED SWITCHING APPLICATION. +0.5 2.5-0.3 + 0.25 Unit in mm ,1 .5 - 0.15 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : V jt( 3 ) = 0.9V (Typ.) : tj* ^ i.öns (Typ.) ; CVf1-0,9pF (Typ,) -e p öo +I CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse , . 1997 05-07 1/2 - TOSHIBA 1SS193 ip - vf IR - Vr REVERSE VOLTAGE V r (V) Ct - Vr -
OCR Scan
Abstract: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application z Small package z Low forward voltage z Small total capacitance : SC-59 : VF (3) = 0.9V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum , V Unit Marking 1 2007-11-01 1SS193 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS193 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries Toshiba
Original
Abstract: MCC Features · · Low Leakage Current Surface Mount SOT-23 Package omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS193 150mW Switching Diodes SOT-23 A D Maximum Ratings · · Operating Temperature: -55OC to +150OC Storage Temperature: -55OC to +150 OC Maximum Ratings Reverse Voltage Forward Current Power Dissipation @ TA=25OC Storage Temperature Range Junction Temperature , .950 .037 .950 Revision: 3 www.mccsemi.com 2002/12/31 1SS193 MCC Revision: 3 Micro Commercial Components
Original

2SC1815

Abstract: 2sk117 2SA1015 330 1D4B42 1.2 k 1SS193 NO a 1.5 A 02CZ6.8 (5) 0~30 V 4.6 Vo = 0~ 30 V Io = 0~ 1.5 A [8] 10 V 02CZ6.8 4.7 200 µF 1SS193 Reset , FET (2) 150 k 1SS193 500 pF 30 k 5.13 30 k S 10 2SK117 2SC1815 , 508 1SS193 560 N.C. SW 2 -
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Original
2SC521A 2SC185 2SD867 3D4B41 2SK30ATM 6D4B41 k 513 2SC1815C 02CZ5 2SC3419 AC100V
Showing first 20 results.