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1SS184 SC-59 961001EAA2 - Datasheet Archive
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low
1SS184 1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 1SS184 Unit in mm Ultra High Speed Switching Application Small package : SC-59 SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : T = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA IFSM 2 (*) A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature Tstg -55~125 °C Maximum (peak) reverse voltage Surge current (10ms) *: Unit rating. Total rating = Unit rating × 1.5. JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 SC-59 1-3G1E Electrical Characteristics Symbol Test Circuit VF (1) Characteristic VF (2) Min Typ. Max IF = 1mA 0.60 IF = 10mA 0.72 VF (3) IF = 100mA 0.90 1.20 IR (1) VR = 30V 0.1 IR (2) VR = 80V 0.5 Total capacitance CT VR = 0, f = 1MHz 0.9 3.0 pF Reverse recovery time trr IF = 10mA (Fig.1) 1.6 4.0 ns Forward voltage Reverse current Test Condition Unit V µA Marking 961001EAA2 961001EAA2 · TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 2000-09-13 1/2 1SS184 1SS184 Fig.1 Reverse recovery time (trr) test circuit 961001EAA2 961001EAA2' · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2000-09-13 2/2