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1SS181 Datasheet

Part Manufacturer Description PDF Type
1SS181 EIC Semiconductor High Speed Switching Diodes Original
1SS181 Galaxy Semi-Conductor Holdings Surface mount switching diode Original
1SS181 Kexin Ultra High Speed Switching Application Original
1SS181 Shenzhen Yongerjia Electronic Switching Diode Original
1SS181 Toshiba Diode Silicon Epitaxial Planar Type Original
1SS181 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original
1SS181 Toshiba Japanese - Diodes Original
1SS181 Transys Electronics Plastic-Encapsulated Diodes Original
1SS181 TY Semiconductor Surface Mount Switching Diode - SOT-23 Original
1SS181 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS181 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS181 Toshiba Toshiba Shortform Catalog Scan
1SS181 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan
1SS181(F) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3TO-236MOD Original
1SS181S,LF Toshiba 1SS181S - X34 PB-F SOT-23 M8 DIODE (LF), IFM=300MA Original
1SS181T5LFT Toshiba 1SS181 - Rectifiers Diode Original
1SS181(T5L,M) Toshiba 1SS181 - Diode Switching 85V 0.3A 3-Pin S-Mini T/R Original
1SS181(T:5LT) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original
1SS181(TE85L) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original
1SS181TE85L Toshiba 1SS181 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
Showing first 20 results.

1SS181

Catalog Datasheet MFG & Type PDF Document Tags

1SS181

Abstract: 1SS181 1SS181 : : : : : mm SC-59 VF (3) = 0.92V () trr = 1.6ns () CT = 2.2pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1E VR 80 V IFM , ) (//) ( /) () () *: 150% 1 2007-11-01 1SS181 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS181 1. (trr) 3 2007-11-01 1SS181 ·
Toshiba
Original

1SS181

Abstract: J-STD-020D 1SS181 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere FEATURES SOT-23 · Fast Switching Speed · For general purpose switching applications , otherwise specified Characteristic Symbol 1SS181 Units Non-Repetitive Peak Reverse Voltage , Test Condition VF V uA REV. , Oct-2010, KSYR05 RATING AND CHARACTERISTIC CURVES 1SS181 , P/N 1SS181 Marking A3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS181
Lite-On Semiconductor
Original
J-STD-020D 2002/95/EC

1ss181

Abstract: Product No. 1SS181-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , ' suffix to part number above. For example, 1SS181-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS181 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Dual , . Revision: April, 2012 www.wontop.com 1 ® 1SS181 WON-TOP ELECTRONICS Electrical , ® 1SS181 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) A3 A3
Won-Top Electronics
Original
MIL-STD-202 3000/T

MARKING a3 SOT-23

Abstract: 1ss181 BL Galaxy Electrical Production specification Surface mount switching diode 1SS181 , INFORMATION Type No. Marking Package Code 1SS181 A3 SOT-23 MAXIMUM RATING @ Ta=25 unless , Production specification 1SS181 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Surface mount switching diode 1SS181 PACKAGE OUTLINE Plastic surface mounted package SOT , : mm PACKAGE INFORMATION Device Package Shipping 1SS181 SOT-23 3000/Tape&Reel
BL Galaxy Electrical
Original
MARKING a3 SOT-23 CJ SOT23 A3 marking diode sot-23 MARKING A3 sot23 BL/SSSDC001

A3 marking diode sot-23

Abstract: MARKING a3 SOT-23 1SS181 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , @t=10ms Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS181 Units V V mA mA A mW 85 80 300 100 2 150 125 , -2010, KSYR05 RATING AND CHARACTERISTIC CURVES 1SS181 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Device Marking : Device P/N 1SS181 Marking A3 Equivalent Circuit Diagram Lite-On
Lite-On Semiconductor
Original
1SS181 equivalent

100MAS

Abstract: 1SS181 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (Typ.) l Fast reverse recovery time : trr = 1.6ns (Typ.) l Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse , 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS181 RESTRICTIONS ON
Toshiba
Original
100MAS
Abstract: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , VR IFM IO IFSM PD TJ TSTG 1SS181 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS181 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , Marking : Device P/N 1SS181 Marking A3 Equivalent Circuit Diagram Lite-On Semiconductor Lite-On Semiconductor
Original

marking C3 sot-23

Abstract: 1SS226 c3 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , Eqivalent Circuit diagram 1 2 1 2 1SS181 A3 3 1SS184 B3 3 1SS187 D3 3 1
Weitron
Original
1SS190 1SS193 1SS196 1SS226 marking C3 sot-23 1SS226 c3 top marking c3 sot23 MARKING B3 SOT-23 1SS184B3 1SS181/1SS184/1SS187
Abstract: z charge Small total capacitance : CT = 2.2pF (typ.) * Low stored 1SS181 SOD-323(SC-76) .012 , -76) * Terminal : Solder plated, solderable per MIL-STD-750, Driver Marking 1SS181 = A3 Method 2026 , .049 (1.25) max. CATHODE 1 C C WILLAS 1SS181 Electrical characteristic curves 10 Ta=100 1 , Fig.5 Reverse recovery time (trr) test circuit WILLAS 1SS181 SOT-23 NOTES: A L 3 1 V G 2 B S -
Original

1SS181

Abstract: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Absolute , Reverse current Test Condition Unit V A Marking 1 2007-11-01 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS181 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

1SS181

Abstract: 100MAS 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS181 RESTRICTIONS ON
Toshiba
Original
robotics

1SS181

Abstract: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS181 ULTRA HIGH SPEED SWITCHING APPLICATION. â'¢ Small Package : SC-59 â'¢ Low Forward Voltage : Vp (3) = 0.92V (Typ.) â'¢ Fast Reverse Recovery Time : trr= 1.6ns (Typ.) â'¢ Small Total Capacitance : Ct = 2.2PF (Typ.) MAXIMUM RATINGS (Ta = 25°C) (*) Unit Rating. Total Rating = Unit RatingXl.5. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS181 If - VF ir - vr < fa 100m 10m lm 100/u 10 p
-
OCR Scan
961001EAA2

1SS181

Abstract: 961001EAA2 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , the TOSHIBA Semiconductor Reliability Handbook. 2000-09-13 1/2 1SS181 Fig.1 Reverse
Toshiba
Original

4558 dd

Abstract: 5W393 F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300
-
OCR Scan
5W393 TA75393 LM393 LM358 TA75558 4558 dd 4558 equivalent TA75S393 HN2D02FU TA75S393F TA75S01F TA75S558F TC75S51F TA75W393FU
Abstract: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (Typ.) l Fast reverse recovery time : trr = 1.6ns (Typ.) l Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward Toshiba
Original

1SS181

Abstract: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Absolute , Reverse current Test Condition Unit V A Marking 1 2007-11-01 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS181 RESTRICTIONS ON PRODUCT USE ·
Toshiba
Original

marking CODE A3

Abstract: 724 1SS181 1SS181 SILICON EPITAXIAL PLANAR DIODE Features Small package 1. CATHODE 2. CATHODE Low forward voltage Fast reverse recovery time 3. ANODE Small total capacitance Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM , Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 31/08/2005 1SS181 SEMTECH ELECTRONICS
Semtech Electronics
Original
marking CODE A3 724 1SS181 code a3 sot a3 sot 23
Abstract: SMD Type Product specification 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns(Typ.) 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 â  Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 3 2.Emitter +0.1 , ://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification 1SS181 TY Semiconductor
Original

1SS181

Abstract: 1SS181 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:A3 ELECTRICAL CHARACTERISTICS o (Ta , 1SS181 Typical Characteristics IF - VF REVERSE CURRENT I R (A) FORWARD CYRRENT I F (A) 100m
WEJ Electronic
Original
Abstract: Diodes SMD Type Surface mount switching diode 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns(Typ.) 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 â  Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 3 2 , www.kexin.com.cn 1 Diodes SMD Type 1SS181 www.kexin.com.cn 2 Kexin Kexin
Original

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS181 145 015AZ5.6 127 02CZ18 133 1SS184 148 015AZ6.2 127 02CZ20 133 , 1SS300 HN4D01JU HN1D01FU 1SS181 1SS308 HN1D01F 1SS361FV 1SS361F 1SS361 , IR (µA) VF (V) CT (pF) USC S-MINI C3 1SS226 4 A3 1SS181 , A2 1SS181 ×2 HN1D02FE 100 80 100 0.5 80 1.2 100 0.9 0 1.6 , 1.2 100 4.0 0 4 A3 1SS300 1SS181 1SS361 100 80 * * 300 100 0.5
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C
Showing first 20 results.