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Part : TV07RF-21-121S-S15-453 Supplier : Amphenol Manufacturer : PEI Genesis Stock : 1 Best Price : $1004.42 Price Each : $1004.42
Part : TV07RF-23-151S-S15-453 Supplier : Amphenol Manufacturer : PEI Genesis Stock : 1 Best Price : $1220.58 Price Each : $1220.58
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Part : TV07RF-23-151S-S15-453 Supplier : Amphenol Manufacturer : Powell Electronics Stock : 1 Best Price : $1,245.4900 Price Each : $1,245.4900
Part : 1SS154(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,130 Best Price : $1.44 Price Each : $1.44
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1SS154 Datasheet

Part Manufacturer Description PDF Type
1SS154 Kexin UHF S Band Mixer / Detector Applications Original
1SS154 Toshiba DIODE SCHOTTKY DIODE 6V 0.03A 3(1-3G1A) Original
1SS154 TY Semiconductor UHF S Band Mixer / Detector Applications - SOT-23 Original
1SS154 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS154 N/A High Frequency Device Data Book (Japanese) Scan
1SS154 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS154 Toshiba DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Scan
1SS154 Toshiba Schottky barrier diode for UHF-S band mixer/detector applications Scan
1SS154TE85L Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original
1SS154TE85R Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original

1SS154

Catalog Datasheet MFG & Type PDF Document Tags

1SS154

Abstract: 1SS154 1SS154 UHFS / : mm (Ta = 25°C) VR 6 IF 30 JEDEC JEITA V mA Tj 125 °C Tstg -30125 °C : SC­59 1­3G1A : 12 mg () (//) ( /) () () (Ta = 25 , CT VR = 0, f = 1MHz 0.8 pF 1 2007-11-01 1SS154 2 2007-11-01 1SS154 · · · · "" · · ·
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Original
Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Small package. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 6 30 125 -30~125 Unit V mA °C °C JEDEC JEITA TOSHIBA SC-59 1-3G1A Electrical Characteristics (Ta = 25 , 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE · The information contained herein Toshiba
Original
20070701-EN

1SS154

Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC JEITA , 2003-03-24 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original

1SS154

Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC JEITA , 2003-03-24 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original

1SS154

Abstract: TOSHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS154 UHF-S BAND MIXER/DETECTOR APPLICATIONS Small Package. Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 6 V Forward Current if 30 mA Junction Temperature Tj 125 °C , 1MHz â'" 0.8 â'" pF Marking Type Name b a TEI-B" 1 2001-05-31 TOSHIBA 1SS154 If - VF IR - , VOLTAGE Vr (V) REVERSE VOLTAGE VR (V) 2 2001-05-31 TOSHIBA 1SS154 RESTRICTIONS ON PRODUCT USE
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OCR Scan

1SS154

Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range , 2007-11-01 1SS154 2 2007-11-01 1SS154 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and
Toshiba
Original

AI500

Abstract: SC-59 marking 1F SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS154 U n i t in m m UHF-S BAND MIXER /D ET ECT OR APPLICATIONS. + 0.5 . Small Package MAXIMUM RATINGS (Ta=25°C) SYMBOL Vr If Tj Tstg RATING 6 30 125 -30-125 UNIT V mA ° C ° C Weight : 0.012g CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range J EDEC E I AJ 2 N. C 3 CATHODE - SC 59 1- 3G1A ELECTRICAL , "B B A B 1119 1SS154 1F " VF Ip (mA) c ai 500 300 1fa = 75 r 50 lu VF FORWARD
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OCR Scan
AI500 SC-59 marking 1F 1fa MARKING
Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC â'• JEITA SC-59 TOSHIBA Electrical Characteristics (Ta = 25°C) Characteristics 1-3G1A Toshiba
Original

1SS154

Abstract: TOSHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS154 UHF-S BAND MIXER/DETECTOR APPLICATIONS Small Package. MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 6 V Forward Current if 30 mA Junction Temperature Tj 125 °C Storage Temperature Range Tstg -30-125 °C +0.5 2.5-0.3 , /2 TOSHIBA 1SS154 If - VF IR - Vr
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OCR Scan
961001EAA2

1SS154

Abstract: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range , 2007-11-01 1SS154 2 2007-11-01 1SS154 RESTRICTIONS ON PRODUCT USE 20070701-EN · The
Toshiba
Original
Abstract: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE 1SS154 U nit in mm + 0.5 2 5 -0 3 U H F - S BAN D M IXER / DETECTOR APPLICATIONS. Small Package. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range SYMBOL Vr if RATING 30 125 -3 0 -1 2 5 6 Tj UNIT V mA °C Tstg °c 1. N.C. 2. ANOUK 3. CATHODE , EL^T B B A Type Name ET 1 0 5 1SS154 TOTAL C A PA CITA N C E C t FORW ARD CU -
OCR Scan
10//A
Abstract: TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS154 1 w êêf w êêf m wm r 5 4 m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Forward Voltage Total Capacitance SYMBOL Vr Ir VF(1) V 'R Y O 'i c T Ir < TEST CONDITION = 10^A II cn , to change w itho ut notice. 1997-05-08 1/2 TO SH IB A 1SS154 ip - v f IR - -
OCR Scan
Abstract: 1SS154 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IX E R / DETECTOR APPLICATIONS +0.5 2.5-0.3 Small Package. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr if Tj Tstg RATING 6 30 125 -3 0 -1 2 5 UNIT V mA , 1SS154 TO SHIBA ip - Vf IR - V r < a E -i & H S= 0 D ü H 8 a > 05 -
OCR Scan

1SS154

Abstract: varicap ghz 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT (-) TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE: Ta = -40 to 85deg PARAMETER IS N BV IBV RS CJ0 VJ M FC TT EG XTI = = = = = = = = = = = = 1.26E-09 1.02 6 1.00E-04 4.1 6.90E-13 0.119 0.146 0.5 2.75E-08 0.60 4.33 VARICAP
Toshiba
Original
varicap ghz 00E-09

smd marking BA

Abstract: transistor smd marking BA Diodes SMD Type UHF~S BAND MIXER/DETECTOR APPLICATIONS 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it R e v e rs e V o lta g e VR 6 V F o rw a rd C u rre n t IF 30
Kexin
Original
smd marking BA transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba
Abstract: Product specification 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it R e v e rs e V o lta g e VR 6 V F o rw a rd C u rre n t IF 30 mA J u n c tio n te m p e TY Semiconductor
Original

isv149

Abstract: ISV101 MIX Application Type No. 1SS154 1SS239 1SS271 S3275 1SS242 1SS295 1SS315 Package S-MINI (Single
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OCR Scan
ISV101 ISV102 ISV103 ISV147 ISV225 ISV255 isv149 iss314 ISV172 ISV262 ISV149

tbf819

Abstract: mg50g2cl4 1SS193 2SC2102 1SS238 1SS312, 1SS314 2SC2182 2SK573 2SK1641 1SS239 1SS154, 1SS271
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Original
2SC4542 MG25N6EK1 MG25J2YS40 MG30G2DL1 THS106A MG30T1AL1 tbf819 mg50g2cl4 GT60J101 2SD1678 ths102a 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 [ 1 ] [ 1 ] [ 1 ] 1SS154 BA 141 1SS268 BF 143 1SS269 , 1SV252 1SV312 1SS154 Single 1SS315 JDH2S01T Mixer SBD 1SS271 Twin 1SS295 1SV229 , (MHz) [ 3 ] 6. VHF~UHF SBD VR IF *VRM (V) (mA) 1SS154 6 1SS271 , USQ 1'st IF Amp 2SC5084 MT3S03A MT3S04A 1SS154 S-MINI Bipolar transistor S-MINI JDP2S01T JDP2S02T SMQ 1SS154 (single) 1SS271 (double) 3SK199 3SK232 3SK291 Si
Toshiba
Original
2SC386A 3SK73 3SK78 3SK101 3SK114 3SK121 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SK1310 2sc5066 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

3120 tuner

Abstract: C5086 Attinuater, Switch PIN Single Tw in Single 1SV237 1SV128 1SV172 1SS154 1SS271 1SS295 * 1SV252 1SS239
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OCR Scan
3SK127 1SV204 1SV226 1SV254 1SV256 1SS241 3120 tuner C5086 C1923 3SK240 3SK283 3SK146 3SK207 2SC3828

3SK73

Abstract: 3SK121 Diode Double S-MINI fSC S-MINI SSM 1SS154 JDH2S01FS 2SC5084 MT3S03A , MOSFET 1SV271 1SV307 S-MINI 1SS239 1SS154 (single) 1SS271 (double) 3SK199 3SK232 3SK291 , Amp OSC 2SC5087 2SC5092 1SS154 (single) 1SS271 (double) SSM 2SC5092 USQ
Toshiba
Original
2SC2328 3SK112 S-AV24 S-AU82VL 2SC2509 toshiba S-AV24 2SC2115 2SK2856 2SC385 2SC2349 2SK3276

2SC2499

Abstract: 1SV252 MIX Application Type No. 1SS154 1SS239 1SS271 S3275 1SS242 1SS295 1SS315 Package S-MINI (Single
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OCR Scan
2SC2499 2SC3609 2SC4393 1SV224 1SV99 THS126 2sc4200 THS117, THS119 transistor 2sc2499 NPN Transistor TO92 300ma Schottky Diode SC-62 400MH 200MH 2SC2705 2SA1145 2SC4203 2SC3613
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