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1SS108 Datasheet

Part Manufacturer Description PDF Type
1SS108 EIC Semiconductor Schottky Barrier Diodes Original
1SS108 Hitachi Semiconductor Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original
1SS108 Renesas Technology Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original
1SS108 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS108 N/A High Frequency Device Data Book (Japanese) Scan
1SS108 N/A The Diode Data Book with Package Outlines 1993 Scan

1SS108

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. ADE-208-154A (Z) Rev. 1 Ordering Information Type No. 1SS108 Cathode W hite 2nd band , 1 r 2 1SS108 Absolute Maximum Ratings (Ta = 25 °C) Item Reverse voltage Average , HITACHI 1SS108 HITACHI 3 1SS108 4 HITACHI 1SS108 Package Dimensions Unit: mm -
OCR Scan
diode hitachi schottky DO-35 rectifier hitachi rectifier 1SS108 DIODE DO-35 SC-48
Abstract: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , 1SS108 White Black H DO-35 H Outline 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse , 1SS108 10 ­2 Reverse current I R (A) ­3 10 10­4 ­5 10 10 ­6 0 5 10 , . Reverse voltage 10 1SS108 100 Rectifier efficiency (%) 80 60 40 20 0 0 0.5 Hitachi Semiconductor
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Hitachi DSA00391
Abstract: ADE-208-154 (Z) 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 Features Outline H · Detection efficiency is very good , Information 2nd band Cathode band Type No. Cathode 2nd band Mark Package Code 1SS108 White Black , =200pF , * Failure criterion ; IR 200uA at VR = 10V Both forward and reverse direction 1 pulse. 1SS108 10 , 2.5 Input voltage Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage 3.0 1SS108 Unit -
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HITACHI 1SS108 Hitachi DSA0014
Abstract: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , 1SS108 White Black H DO-35 H Outline 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse , 1SS108 10 ­2 Reverse current I R (A) ­3 10 10­4 ­5 10 10 ­6 0 5 10 , Vs. Reverse voltage 3 1SS108 100 Rectifier efficiency (%) 80 60 40 20 0 0 Hitachi Semiconductor
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Hitachi DSA001653
Abstract: Schottky Barrier Diode for Various Detector, High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Outline Ordering Information Type No. Cathode 2nd band Mark Package Code 1SS108 White Black H DO-35 I- f 1 1 1 IF \\ D ? 1. Cathode 2 , ^A at V r = 10V 233 1SS108 0 5 10 15 20 25 30 Reverse voltage Vr (V) Fig -
OCR Scan
Abstract: 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching ADE-208-154 (Z) HITACHI Outline Preliminary Rev. 0 Oct 1993 Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. =0 = EZZUG Ordering Information Type , pulse. Failure criterion ; Ip > 200 (jA at VR = 10V 1SS108 10 10 10' < OC c £ w D O O , voltage Fig.4 Rectifier efficiency Vs. Input voltage 1SS108 Package Dimensions Unit: mm 26.0 -
OCR Scan
Abstract: 1SS108 SILICON SCHOTTKY BARRIER DIODE For Various Detector, High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse voltage VR 30 V Average forward current IO 15 mA Junction temperature Tj 125 , /2005 1SS108 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a Semtech Electronics
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IR200
Abstract: 1SS108 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Max. 0.5 Min. 27.5 Max. 1.9 Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 , 1SS108 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a Semtech Electronics
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Abstract: 1SS108 SCHOTTKY BARRIER DIODES FEATURES : DO - 35 Glass (DO-204AH) · High reliability with glass seal · Small temperature coefficient. · Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 1.00 (25.4) min. 0.020 (0.52)max. Dimensions in inches and ( millimeters , CURVES ( 1SS108 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage 10 10 EIC Semiconductor
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Abstract: 1SS88 1SS106 1SS108 MHD 1SS165 1SS174 155198 155199 1SS286 "2 GaAs System Protection Diode -
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1SS86 HSM126S HVU12 HVC308A HSK277 HSM8 pin diode do35 pn junction diode application lld zener HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C
Abstract: DIODE SERIES ·î i t | ' > a 7 Application Package Code DO-35 Detector switching Type No. Vr K Ratings Schottky barrier diodes for detectors & mixers Characteristics M isstoe 1SS108 1SS196 r~ 1SS199 10 30 10 30 25 30 3 10 10 3 10 3 3 10 10 10 10 10 10 3 3 10 to (mA) 30 15 30 15 35 ` 35 ` 30 15 15 30 15 30 30 15 15 15 15 30 30 30 30 15 If (mA) [V f] (V) max 4.5 3 4.5 3 [0.6] [0.7] 8 [0.6] [0.6] 35 [0.58] 35 35 [0.58] [0.58] [0.58] [0.58] 4.5 4.5 35 35 [0.6] VF(V ) [IF] (mA) 1.0 1.0 1.0 -
OCR Scan
1SS119 iss86 HSR101 ISS86 HSU88 HSU276 HSC276 HSM88AS
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
1S1860 1S1992 1S1993 1S1994 1S2198 1S2203 1SS99 DAP 7a 1ss97 1ss98 1SS101 1ss43 1S1659 1S1858 890MH
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
1S1995 1S2210 1S2211 1SS16 1SS69 TSS ISI 3060MH 1SS13 9375MH
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
1SS14 1SS237 1SS972 1SS15 1SS90 1SS125 1SS151 1SS198
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
iss99 1SS87 1S185 1SS78 1SS70 1SS228 855MH 25MIN 26MIN
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
RT8059 ISS90
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
Abstract: Type No. 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS86 1SS88 1SS106 1SS108 1SS1I0 1S S 118 1SS119 1SS120 1SS1S2 1SS165 1SS172 1SS174 1SS197 1SS198 1SS199 1SS270 1SS270A 1SS277 1SS286 HRB0103A HRB0103B HRC0202A HRF22 HRF32 HRF302A HRF502A HRF503A HRP22 HRP32 HRU0103A HRU0203A HRU0302A HRW26 HRW26F HRW34 HRW34F HRW36 HRW36F HRW37F HRW0202A HRW0202B HRW0203A HRW0302A HRW0502A Page Package code 6 6 6 6 6 6 6 6 6 5 6 6 6 6 5 6 6 6 5 6 6 6 5 6 6 6 6 5 6 7 7 7 7 7 7 7 7 7 7 -
OCR Scan
DO-41 DO-214 HRW0503A HRWO702A HRW0703A HRW1002A
Abstract: 1SS106 ai 10 30 4. 5 1 70 6 1 1. 5 1 Ti >70%(f=40MHz) 24C 1SS108 B2 30 100 15 0. 2 3 1 100 10 1 -
OCR Scan
7A SF SC 30 7A SF sc 7A SF 32MAX 53MIN 03MAX SC-10 10-32UNF-2A SC-10U
Abstract: D 1 : 1SS108 or Equivalent n Vf = 0.1V Package Outline 11.4 0.2 5.4 7.8 0.2 Seiko Epson
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RTC4573 768KH
Abstract: : 1SS108 or Equivalent Vf = 0.1V n Package Outline 11.4 0.2 5.4 7.8 0.2 1.8 2.0 MAX Seiko Epson
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Ultrasonic cleaner circuit diagram MQ282-01 RTC-4573SB
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