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Part : FC-151 S/S 1/8" NPT X 1.5MM Supplier : Labfacility Manufacturer : RS Components Stock : 22 Best Price : £3.12 Price Each : £3.47
Part : 1SS184 Supplier : Toshiba Manufacturer : basicEparts Stock : 15,000 Best Price : - Price Each : -
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Part : TEA6840HV1SS1 Supplier : NXP Semiconductors Manufacturer : ComSIT Stock : 1,000 Best Price : - Price Each : -
Part : FF0251SS1 Supplier : JAE Manufacturer : Interstate Connecting Components Stock : 140 Best Price : $6.1332 Price Each : $7.4962
Part : M2011SS1W01/UC Supplier : NKK Switches Manufacturer : Interstate Connecting Components Stock : 7 Best Price : $2.6322 Price Each : $2.6323
Part : MB2011SS1W01-CA Supplier : NKK Switches Manufacturer : Interstate Connecting Components Stock : 400 Best Price : $3.8433 Price Each : $4.7686
Part : MB2061SS1W01-CA/AT507H Supplier : NKK Switches Manufacturer : Interstate Connecting Components Stock : 78 Best Price : $5.2292 Price Each : $6.2945
Part : 91SS12-2 Supplier : Honeywell Manufacturer : Powell Electronics Stock : 613 Best Price : $17.28 Price Each : $18.15
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Part : 91SS16-3 Supplier : Honeywell Manufacturer : Master Electronics Stock : 509 Best Price : $11.58 Price Each : $37.96
Part : M2011SS1W01 Supplier : NKK Switches Manufacturer : New Advantage Stock : 460 Best Price : $2.40 Price Each : $2.75
Part : M2011SS1W01/UC Supplier : NKK Switches Manufacturer : New Advantage Stock : 20 Best Price : $2.42 Price Each : $2.46
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1SS106 Datasheet

Part Manufacturer Description PDF Type
1SS106 EIC Semiconductor Schottky Barrier Rectifiers Original
1SS106 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original
1SS106 Jinan JIFU Semiconductor Diode Schottky Diode 10V 0.03A 2DO-35 Original
1SS106 Renesas Technology Diode, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original
1SS106 Renesas Technology Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original
1SS106 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS106 N/A High Frequency Device Data Book (Japanese) Scan
1SS106 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS106-E Renesas Technology Diode: Silicon Schottky Barrier Diode for Various Detector: High Speed Switching Original
1SS106TA Renesas Technology Diode, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original

1SS106

Catalog Datasheet MFG & Type PDF Document Tags

HITACHI 1SS106

Abstract: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI , Mark Package Code 1SS106 W hite W hite H DO-35 Outline = C 3 = 1 â â  4 â i â  r 2 w ' 2nd band Cathode band 1. Cathode 2. Anode 1SS106 Absolute Maximum , Forward voltage VF (V) Fig.l Forward current Vs. Forward voltage 2 HITACHI 1SS106 HITACHI 3 1SS106 4 HITACHI 1SS106 Package Dimensions 1 - i f f -
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OCR Scan
HITACHI 1SS106 ADE-208-153A SC-48

1SS106

Abstract: 1SS106 diode 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS106 , VF (V) 2.0 Fig.1 Forward current Vs. Forward voltage 2 1SS106 10 ­2 Reverse current , 1SS106 100 80 Rectifier efficiency (%) 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Input
Hitachi Semiconductor
Original
1SS106 diode Hitachi DSA002712

1SS106

Abstract: hitachi rectifier 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , Mark Package Code 1SS106 White White H DO-35 H Outline 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 140µA at V R = 6V 1SS106 Main Characteristic -1 10 10 -2 Reverse current I R (A , .4 Rectifier efficiency Vs. Input voltage Vin 3 1SS106 Package Dimensions 4.2 Max 26.0 Min 1
Hitachi Semiconductor
Original
hitachi rectifier diode hitachi schottky Hitachi DSA00340 D-85622

1SS106

Abstract: hitachi rectifier 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , Mark Package Code 1SS106 White White H DO-35 H Outline 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , at VR = 6V Rev.1, Oct. 1998, page 2 of 5 1SS106 Main Characteristic -1 10 10 -2 , 1SS106 Package Dimensions 4.2 Max 26.0 Min H 2.0 26.0 Min 2 0.5 1 2nd band
Hitachi Semiconductor
Original
ADE-208-153 DSA003640

1SS106

Abstract: HITACHI 1SS106 ADE-208-153 (Z) 1SS106 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features · Detection efficiency is very good. · Small temperature coefficient. · High , . Cathode 2nd band Mark Package Code 1SS106 White White H DO-35 2nd band Cathode band 1. Cathode 2 , r Failure criterion ; Ir > 140pA at VR = 6V 1SS106 10' 10' ' < IL . C < et d > i , voltage 1SS106 Package Dimensions Unit: mm 26.0 Min 4.2 Max 2(5.° Min OC B eviS . -ôX -
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OCR Scan
DO-35 rectifier glass diode white band

1SS106

Abstract: ADE-208-153A products contained therein. 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed , 2nd band Mark Package Code 1SS106 White White H DO-35 H Pin Arrangement 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS106 Absolute Maximum Ratings (Ta = , Notes: 1. Failure criterion; IR 140µA at VR = 6V Rev.1, Oct. 1998, page 2 of 2 1SS106 Main , Rev.1, Oct. 1998, page 3 of 3 1SS106 Package Dimensions 4.2 Max 26.0 Min H 2.0
Hitachi Semiconductor
Original
pin diode do35

1SS106

Abstract: 1SS106 diode ADE-208-153 (Z) 1SS106 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 Features Outline H · Detection efficiency is very good , Information 2nd band Cathode band Type No. Cathode 2nd band Mark Package Code 1SS106 White White , =200pF , * Failure criterion ; IR 140µA at VR = 6V Both forward and reverse direction 1 pulse. 1SS106 -1 , Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage 3.0 1SS106 Unit: mm Package
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Original
Hitachi DSA0014

1SS106

Abstract: 1ss106 application note 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125 , 2nd band Mark Package Code 1SS106 White White H DO-35 H Pin Arrangement , 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR , Rev.2.00, Oct.23.2003, page 2 of 4 1SS106 Main Characteristics 10­2 10­2 10­3 Reverse , .2 Capacitance vs. Reverse voltage Rev.2.00, Oct.23.2003, page 3 of 4 1SS106 Package Dimensions As of
Renesas Technology
Original
REJ03G0125-0200Z 1ss106 application note

1SS106

Abstract: 1SS106 diode 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Outline =ci*= Ordering Information Type No. Cathode 2nd band Mark Package Code 1SS106 White White H DO-35 ' 2nd band Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse , at V r = 6V 231 1SS106 < u. c 3 O "E (0 w CD h. LL o 0.4 0.8
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OCR Scan

1SS106

Abstract: ADE-208-153A 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS106 , VF (V) 2.0 Fig.1 Forward current Vs. Forward voltage 1SS106 10 ­2 Reverse current I R , 10 ­1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance Vs. Reverse voltage 1SS106 100
Hitachi Semiconductor
Original
Hitachi DSA002788

1SS106

Abstract: 1SS106 diode 1SS106 SCHOTTKY BARRIER DIODES FEATURES : DO - 35 Glass (DO-204AH) · High reliability with glass seal · Small temperature coefficient. · Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 1.00 (25.4) min. 0.020 (0.52)max. Dimensions in inches and ( millimeters , ( 1SS106 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage 1000 -1 100
EIC Semiconductor
Original

1SS106

Abstract: ADE-208-153A . 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125 , 2nd band Mark Package Code 1SS106 White White H DO-35 H Pin Arrangement , 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR , Rev.2.00, Oct.23.2003, page 2 of 4 1SS106 Main Characteristics 10­2 10­2 10­3 Reverse , .2 Capacitance vs. Reverse voltage Rev.2.00, Oct.23.2003, page 3 of 4 1SS106 Package Dimensions As of
Renesas Technology
Original
Abstract: 1SS106 SMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES Detection efficiency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER TV RADIO TELEPHONE as detectors, super high speed switching circuits, small current rectifier MECHANICAL DATA : DO-35 glass case color band denotes cathode end : Approx. 0.13 gram Dimensions in inches and (millimeters , RATINGS AND CHARACTERISTICS CURVES 1SS106 Figure 2. Reverse Characteristics Reverse Current IR(A DACO Semiconductor
Original

1SS106

Abstract: 1SS106 diode 1SS106 SILICON SCHOTTKY BARRIER DIODE FOR VARIOUS DETECTOR High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 10 V Average Rectified Current Io 30 mA Junction Temperature Tj 125 O Storage Temperature TStg -55 to +125 O C C Characteristics at Tamb = 25oC Symbol Min
Semtech Electronics
Original
IR/140

1SS106

Abstract: "1SS106" 1SS106 SILICON SCHOTTKY BARRIER DIODE FOR VARIOUS DETECTOR High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 10 V Average Rectified Current Io 30 mA Junction Temperature Tj 125 O Storage Temperature TStg -55 to +125 O C C Characteristics at Tamb = 25oC Symbol Min
Semtech Electronics
Original

1SS106

Abstract: hitachi pf0147 f = 217Hz 1SS106 100p Oscillo Scope 1SS106 2.2k Vout Duty=1/8 50% 50% VAPC
Hitachi Semiconductor
Original
PF0147 hitachi pf0147 vapc Hitachi DSA00312 ADE-208-322D 915MH 890MH

pf0146

Abstract: 1SS106 P.G f=217Hz Pout VAPC 2p 2p 1SS106 100p Oscillo Scope Duty=1/8 Power Meter 50% 1SS106 50% VAPC 2.2 k 95% Vout Vout 5% tr tf Test Fixture Pattern
Hitachi Semiconductor
Original
pf0146 pf014 Hitachi DSA00313 PF0146 ADE-208-285C BLO1RN1-A62-001

blo2RN1-R62

Abstract: 1ss106 application note PF0121 Switching Time Test Diagram VDD=12.5 V S.G Pin P.G f=10 kHz D.U.T Pout 1SS106 Z=50 2p 2p 1SS106
Hitachi Semiconductor
Original
blo2RN1-R62 Hitachi DSA002719 ADE-208-097A BL01RN1-A62-001

HVU12

Abstract: HSM126S 1SS88 1SS106 1SS108 MHD 1SS165 1SS174 155198 155199 1SS286 "2 GaAs System Protection Diode
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OCR Scan
1S2076A 1SS86 HSM126S HVU12 HVC308A HSK277 HSM8 pn junction diode application hsu277 SMD DIODE 1N4148 PACKAGE HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C

1SS106

Abstract: 1ss106 application note 1SS106 SILICON SCHOTTKY BARRIER DIODE FOR VARIOUS DETECTOR High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 10 V Average Rectified Current Io 30 mA Junction Temperature Tj 125 O Storage Temperature TStg -55 to +125 O C C Characteristics at Tamb = 25oC Symbol Min
Semtech Electronics
Original

blo2RN1-R62

Abstract: 1ss106 application note 1SS106 100p Oscillo Scope 2p 2p 50% 1SS106 50% VAPC 2.2 k 95% Vout Vout 4
Hitachi Semiconductor
Original
BL01RN1-A62 Power Amplifier Module for GSM DSA003712 G746

1SS106

Abstract: PF0121 PF0121 Switching Time Test Diagram VDD=12.5 V S.G Pin P.G f=10 kHz D.U.T Pout 1SS106 Z=50 2p 2p 1SS106
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OCR Scan
Showing first 20 results.