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Part : 1S1585 Supplier : Toshiba Manufacturer : Chip1Stop Stock : 10,523 Best Price : $0.9370 Price Each : $1.14
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1S1585 Datasheet

Part Manufacturer Description PDF Type
1S1585 EIC Semiconductor High Speed Switching Diodes Original
1S1585 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1S1585 N/A The Diode Data Book with Package Outlines 1993 Scan
1S1585 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1S1585 Panasonic Silicon epitaxial planar type diode. Scan
1S1585 Toshiba Silicon Epitaxial Planar Type Scan
1S1585 Toshiba Integrated Circuits for TV Systems Scan

1S1585

Catalog Datasheet MFG & Type PDF Document Tags

1S1585

Abstract: 1SS239 Super-Mini Diodes (SOT-23MOD, SOT-143MOD.) Electrical Characteristics (Ta=25°C) Type No. Application V r(V) 80 80 80 80 80 80 80 200 80 40 200 F6 Mark Equivalent other package Type No. 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 Series Remarks IO(mA) 100 100 100 100 100 100 100 trr , ED 1S1585 1SS293 1SS250 1SS104 1S1585 1S1585 Dual Schottky Barrier Dual 30TYP A3 C9 30 , Barrier 1SS372 1SS378 1SS307 1S1585 1S1585 1S1585 1S1585 F5 Schottky Barrier series Schottky Barrier
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OCR Scan
1SS239 1SV99 1SS241 1SV103 1SV147 1S1585 equivalent 1ss193 equivalent 1SS SOT mark 107YP 1SS181 1SS184 1SS187 1SS190 1SS193

S3 DIODE schottky

Abstract: S4 DIODE schottky Mark A3 B3 C3 Similar 1S1585 1S1585 1S1585 1SS294 Remarks Anode common Cathode common Series , 1S1585 1SS294 1SS377 2SS2S0 1SS374 1SS377 1S1585 1S158S 1S1585 1S1585 1S1585 FS Schottky barrier Series , 1S1S85 Anode common 1SS361 High-speed switching 80 100 1.6TYP B3 1S1585 Cathode common 1SS362 High-speed switching 80 80 1.6TYP 1.6TYP C3 C1 1S1585 1S 1585
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OCR Scan
2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B MARK MQ 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367

1s1588

Abstract: Diode 1S1588 TOSHIBA -CDISCRETE/0PT03- ~ b7 Dlf| ^ 7 2 5 0 OOD'ìE'ì'ì 7 | ~ 9097250 TOSHIBA (DISCRETE/OPTO)_ 67C_09299_. Silicon Epitaxial' Planar Type Diode D 1S1585-1S1588 FEATURES , =25°C) CHARACTERISTIC 1S1585 Maximum (Peak) Reverse Voltage 1S1536 1S1587 1S1588 1S1585 Reverse Voltage 151586 151587 , CONDITION MIN. TYP. MAX. UNIT Forward Voltage 151586 1S1587 1S1588 1S1585 Reverse Current 151586 151587 , TOSHIBA CDIS C R E T E /O P T O ) 67C 09301 o T - 0 3 ' 0 $ 1S1585~ 1S1588 - - -
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OCR Scan
Diode 1S1588 1s85 1S1585--1S1588 1585-1S

1S1588

Abstract: 1s1585-1s1588 9097250 TOSHIBA (DISCRETE/OPTO) > 67C 09301 D T-03-03 Fig. trr TEST , 0.9299 _ D 7'O^CJ 1S1585-1S1588 Silicon Epitaxial' Planar Type Diode Unit in mm ULTRA HIGH SPEED , SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage 1S1585 VRM 90 V 1S1536 1S1587 55 1S1588 35 Reverse Voltage 1S1585 Vr 80 V 151586 151587 50 1S1588 30 iMaximum (Peak) Forward Current 151585 , 1-2A1A Weight : 0.14g Marking 1S1585 $ 1S1586 Frei TOSHIBA CORPORATION - 134 - TOSHIBA {DISCRETE
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OCR Scan
SC-40 Diode 1S1587 1s1587 diode 9097250 TOSHIBA toshiba diode do-35 marking XR TOSHIBA CATH02E DO-35 90972SO

IS1588

Abstract: Diode IS1588 =10mA RL - 100S (Fig.) 2 ns 1S1588 - - / 4 -TOSHIBA CORPORATION â'"135 â'" 1S1585-1S1588 -h - Fig , volta3-e v?v (v) ¿0 TOSHIBA CORPORATION 136 jp 1S1585â'" 1S1588 131586 1 SI 587 IR - Vr 1 Si 588 ±R " , RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage 1S1585 Vrm t 90 V 1S1536 1S1587 55 1S1588 35 Reverse Voltage 1S1585 Vr 80 V 151586 151587 50 1S1588 30 Maximum , -35 EIAJ SC-40 TOSHIBA 1-2a1a Weight 0.14g Marking 1S1585 T5 1S1586 T6 1S1587 T7 1S1588 o vi I â 9- x s
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OCR Scan
IS1588 Diode IS1588 si585 100S ct2p S1585-1S1588

2SC982

Abstract: PC40S14D1PR1 O sc i l l o s c o p e 1S1585 10K Reflector 2 0 0 × 2 0 0 × 10 mm A l u m i n u m B oa rd
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Original
2SC982 PC40S14D1PR1 PC40S-15 pc40s15e1pr1 PC40S15E1PR1
Abstract: 1S1585 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage90 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)100u V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current500n @V(R) (V)(Test Condition)80 I(RM) Max.(A) Pk. Rev. Current6u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)100 Semiconductor American Microsemiconductor
Original

c40-16u

Abstract: C40-16PU 0dB = 0.0002bar 10V 300mm 0dB = 1V/bar 94dB 300mm 3.9K C40-16PU, C40-16U 0dB = 20Vpp OUT 1K 3.9K W:100mm H:100mm T: 1mm 300mm IN TP.1 +9V 1K + 330 (40kHz) Lx 22K 30cm 33K 2SC982 W:100mm H:200mm T: 10mm 1S1585 10K -
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Original
16PU

1S1585

Abstract: DO-204AH 1S1585 HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : · High switching speed: max. 2 ns · Continuous reverse voltage:max. 80 V · Repetitive peak reverse voltage:max. 90 V · Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C
EIC Semiconductor
Original
DO204AH

ultrasonic 40khz sensor test circuit

Abstract: ultrasonic transmitter nippon H:200mm T: 10mm 2SC982 synchroscope 1S1585 10K NIPPON CERAMIC Co., Ltd. -
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Original
ultrasonic 40khz sensor test circuit ultrasonic transmitter nippon 40khz ultrasonic transmitter ultrasonic sensor 40khz 40KHz Ultrasonic receiver ultrasonic level sensor 40khz sensor

PC40S14D1PR1

Abstract: 2SC982 O sc i l l o s c o p e 1S1585 10K Reflector 2 0 0 × 2 0 0 × 10 mm A l u m i n u m B oa rd
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Original

tbf819

Abstract: mg50g2cl4 2SC4202 2SC4605 1S1555 1SS193 2SC366 (G) TM 2SC1959 2SC4255 2SC4252 1S1585
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Original
2SC4542 MG25N6EK1 MG25J2YS40 MG30G2DL1 THS106A MG30T1AL1 tbf819 mg50g2cl4 GT60J101 2SD1678 ths102a 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3

mg75n2ys40

Abstract: 2N3055 TOSHIBA amplifier, o Configuration 1S1585X2 VRE F INPUT IMPEDANCE : Z « s/ R1 +1/(»Q o Adjustment of Detection
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C