1N916 1N916A 1N916B DO-35 LL916B LL916 LL916A

HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max.

1N916 1N916, 1N916A 1N916A, 1N916B 1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Current IF(AV) 200 mA IFSM 1 4 A Total Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient RJA 300 Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 200 O Peak Forward Surge Current at Pulse Width = 1 s at Pulse Width = 1 µs C/W O C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 20 mA at IF = 30 mA Symbol Unit 100 75 - V IR Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V (60 mA), IRR = 1 mA, RL = 100 Max. V(BR)R LL916B LL916B LL916 LL916 LL916A LL916A LL916B LL916B Min. - 25 5 50 nA µA µA VF VF VF VF 0.63 - 0.73 1 1 1 V CT - 2 pF trr - 4 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 13/06/2007 1N916 1N916, 1N916A 1N916A, 1N916B 1N916B Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV-1.0 to 100 uA I R -REVERSE CURRENT(nA) VR -REVERSE VOLTAGE (V) 160 REVERSE CURRENT vs REVERSE VOLTAGE I R -10 to 100 V o Ta=25 C 150 140 130 120 120 o Ta=25 C 100 80 60 40 20 0 20 10 110 1 2 3 5 10 20 30 50 30 50 70 100 100 VR -REVERSE VOLTAGE (V) I R -REVERSE CURRENT (uA) GENERAL RULE:The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF -1 to 100 uA FORWARD VOLTAGE vs FORWARD CURRENT VF -0.1 to 100 mA 550 750 VF -FORWARD VOLTAGE (mV) VF -FORWARD VOLTAGE (mV) o Ta=25 C 500 450 400 350 300 250 1 2 5 3 10 20 30 50 o Ta=25 C 700 650 600 550 500 450 100 0.1 0.2 0.3 1 2 5 3 10 FORWARD VOLTAGE vs AMBIENT TEMPERATURE VF -0.01 - 20 mA (-40 to+65 Deg C) FORWARD VOLTAGE vs FORWARD CURRENT VF -10 to 800 mA 1.6 VF -FORWARD VOLTAGE (V) VF -FORWARD VOLTAGE (V) 0.5 I F -FORWARD CURRENT (mA) I F -FORWARD CURRENT (uA) o Ta=25 C 1.4 1.2 1 0.8 900 800 Typical o Ta=-40 C 700 o 600 Ta=+25 C 500 o Ta=+65 C 400 300 0.6 10 20 30 50 100 200 300 500 0.01 0.03 I F -FORWARD CURRENT (mA) o CAPACITANCE (pF) Ta=25 C 0.85 0.8 4 6 8 10 REVERSE VOLTAGE (V) 1 3 10 12 14 REVERSE RECOVERY TIME vs REVERSE CURRENT REVERSE RECOVERY (nS) 0.9 2 0.3 I F -FORWARD CURRENT (mA) CAPACITANCE vs REVERSE VOLTAGE VR=0.0 to 15 V 0.75 0 0.1 4 o Ta=25 C 3.5 3 2.5 2 1.5 1 10 20 30 40 50 60 REVERSE CURRENT (mA) I F =10mA-I RR =1.0mA-Rloop=100 Ohms SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 13/06/2007