NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 1N660 | BKC International | 100 V, 500 mW general purpose diode |
2 pages, |
Scan |  |
|
|||||
| 1N660 | Crimson Semiconductor | SILICON DIODES |
1 pages, |
Scan | |
|
|||||
| 1N660 | Crimson Semiconductor | Silicon Diodes, DO-7 or DO-35 |
1 pages, |
Scan | |
|
|||||
| 1N660 | Fairchild Semiconductor | General purpose low diode. Working inverse voltage 100V. |
10 pages, |
Scan | |
|
|||||
| 1N660 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 |
1 pages, |
Scan | |
|
|||||
| 1N660 | General Diode | Silicon Diode Selection Guide |
5 pages, |
Scan | |
|
|||||
| 1N660 | International Semiconductor, Inc. | SWITCHING DIODE |
1 pages, |
Scan | |
|
|||||
| 1N660 | Motorola | Motorola Semiconductor Datasheet Library |
1 pages, |
Scan | |
|
|||||
| 1N660 | N/A | Shortform Electronic Component Datasheets |
2 pages, |
Scan | |
|
|||||
| 1N660 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: B K C INTERNATIONAL 03E D | 1171^03 OGODaV'i T T-ó GENERAL PURPOSE DIODES 1N659 1N659 1N660 1N661 1N661 , 25 °C) 3.33 mW/ °C Maximum Voltage and Currents 1N659 1N659 1N660 1N661 1N661 WIV Working Inverse Voltage 50V , noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS vF Forward Voltage 1N659 1N659, 1N660, 1N661 1N661 1.0 , 1N660 5.0 HA VR= 100 V 50 HA VR= 100 V, Ta= 100 °C 1N661 1N661 10 HA VR = 200 V 100 MA VR = 200 V, Ta = 100 °C Bv Breakdown Voltage 1N659 1N659 60 V lR= 100(iA 1N660 120 V iR = loonA 1N661 1N661 240 ... | OCR Scan |
2 pages, |
1N661 1N660 1N659 1N3070 1N659 abstract |
|
|||
| Abstract: 11 1N660 120 5000 100 1.0 6.0 - 300 do-35 12 1N627 1N627 100 1000 75 1.5 4.0 - 1000 do-35 13 1N626 1N626 50 , 150 1.0 1.0 10 120 do-35 20 1N660 120 5000 100 1.0 6.0 - - do-35 21 1S921 1S921 100 100 100 1.2 200 - - ... | OCR Scan |
1 pages, |
FDH444 1N3070 1N629 1N643 1N658 1N660 1N661 1N842 BAY72 FDH400 1N628 15921 BA219 1N661 abstract |
|
|||
| Abstract: 250 1N484A 1N484A D035 130 100 .025 125 15 150 250 ' 1N484B 1N484B D035 130 100 .025 125 5 150 250 1N660 ... | OCR Scan |
1 pages, |
D035 1N457 1N457A 1N458 1N458A 1N461 1N461A 1N466A 1N4838 Crimson Semiconductor 1N456 S514QU 2514D96 S514QU abstract |
|
|||
| Abstract: 500 1.5 4 1000 75 1000 1N658 1N658 120 200 500 1.0 100 50 50 300 1N659 1N659 60 200 500 1.0 6 5000 50 - 1N660 ... | OCR Scan |
1 pages, |
hep silicon diode 1N459a 1N461A 1N462A 1N626 1N627 BA170 BAV17 BAV18 1N251 U711M D0B0302 DO-35 U711M abstract |
|
|||
| Abstract: NATL SEMICOND DISCRETE HE D | b501130 0037003 â-¡ | T-01-01 T-01-01 Device No. Package No. vrrm V Min Ir nA @ Max Vr V Min VF V Max '1 mA c PF Max trr na Max Test Cond. Proc. No. 1N461A 1N461A DO-35 DO-35 30 500 25 1.0 100 D2 1N462A 1N462A DO-35 DO-35 70 500 60 1.0 100 D2 1N463A 1N463A DO-35 DO-35 200 500 175 1.0 100 D2 1N659 1N659 DO-35 DO-35 60 5000 50 1.0 6.0 300 (Note 1) D4 1N660 DO-35 DO-35 120 5000 100 1.0 6.0 300 (Note 1) D1 1N661 1N661 DO-35 DO-35 240 10000 200 1.0 6.0 300 (Note 1) D1 1S44 DO-35 DO-35 50 50 10 0.65 0.70 1.0 1.2 10 30 4.0 8 (Note ... | OCR Scan |
1 pages, |
1S921 1S920 1N660 1N659 1N463A 1N462A 1N461A 1N661 1S44 T-01-01 DO-35 T-01-01 abstract |
|
|||
| Abstract: (Note 2) D1 1N659 1N659 DO-35 DO-35 60 5000 50 1.0 6.0 300 (Note 2) D1 1N660 DO-35 DO-35 120 5000 100 1.0 6 300 ... | OCR Scan |
1 pages, |
1N625 1N626 1N627 1N628 1N629 1N658 1N659 1N660 BAX17 IR 30 D1 00370G2 T-01-01 DO-35 00370G2 abstract |
|
|||
| Abstract: 1N659 1N659 DO-35 DO-35 60 5000 50 1.0 6.0 300 (Note 2) D1 1N660 DO-35 DO-35 120 5000 100 1.0 6 300 (Note 3) D1 ... | OCR Scan |
1 pages, |
1N3070 1N625 1N626 1N627 1N628 1N629 1N658 1N659 1N660 1N661 BAX17 IR 30 D1 DO-35 1N625 abstract |
|
|||
| Abstract: NATL SEMICOND DISCRETE HE D | b5013«30 DQ37Q03 DQ37Q03 D § â- 2 ~ T_m T-01-01 T-01-01 Device No. Package No. Vrrm V Min â- r nA @ Max Vr V VF V Min @ Max * mA c PF Max trr ns Max Test Cond. Proc. No. 1N461A 1N461A DO-35 DO-35 30 500 25 1.0 100 D2 1N462A 1N462A DO-35 DO-35 70 500 60 1.0 100 D2 1N463A 1N463A DO-35 DO-35 200 500 175 1.0 100 D2 1N659 1N659 DO-35 DO-35 60 5000 50 1.0 6.0 300 (Note 1) D4 1N660 DO-35 DO-35 120 5000 100 1.0 6.0 300 (Note 1) D1 1N661 1N661 DO-35 DO-35 240 10000 200 1.0 6.0 300 (Note 1) D1 1S44 DO-35 DO-35 50 50 10 0.65 0.70 1.0 1.2 10 30 4.0 8 ... | OCR Scan |
1 pages, |
1N461A 1N462A 1N463A 1N659 1N660 1N661 1S44 1S920 1n659 diode BA318 DQ37Q03 T-01-01 DO-35 DQ37Q03 abstract |
|
|||
| Abstract: 300 0.457/0.559 1N660 120 5000 100 1.0 6.0 300 All Dimensions in - 1N661 1N661 240 10000 200 1.0 ... | OCR Scan |
1 pages, |
LL4448 LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446 LL4447 1N459a la 4450 1N627 datasheet abstract |
|
|||
| Abstract: 200 150 1N658 1N658 1N659 1N659 1N660 1N661 1N661 - 200 100 100 100 500 120 50 100 200 50 @ ... | Original |
1 pages, |
1N646 1N60 1N34A equivalent BAV18 BAV19 BAV20 Diode Equivalent 1k34A diode 1n60 BAY80 BAY71 BAX16 BAV21 Diode Equivalent 1N995 1N270 diode equivalent datasheet abstract |
|
|||
| Abstract: DO 7 (CB 26) DO 35 (CB 102) Silicon signal diodes - High current switching Diodes de signai au silicium - Commutation fort courant Tamb25°C Type Case VR-Vrm lo VF /IF Ir /Vr |r /Vr C trr drs 7E Boîtier (V) (mA) IV) / (mAI (nA)/ (V) («A)/ IV) (pF) (ns) y ' (m A) page max max max max Tamb150°C max max max IN 3600 DO 7 50 - 75 200 1 200 100 50 100 50 2,5 6 400 277 BAY 41 DO 7 40 - '10 225(11 1 200 5000 40 30 40 5 15 200 .# BAY 42 DO 7 60 60 225(1) 1 200 5000 60 30 60(2) 5 15 200 ... | OCR Scan |
1 pages, |
D185 BAW55 datasheet abstract |
|
|||
| Abstract: y THOMSON-CSF silicon signal diodes diodes de signal au silicium Type Vr-Vrm â- o lF* VF / «F â- r / VR «R / Vr Tamb 150°C C trr / «F Case max max max max max max max (V) (mA) (V) (mA) (nA) (V) ttA) (V) (pIF) (ns) (mA) very high speed switching Tamb = 25°C commutation ultra rapide 1N 4244 15- 20 50 20 100 10 100 10 0,8 0,75 10 DO 7 (CB-26 CB-26) high voltage switching Tamb = 25°C commutation haute tension BA 224-150 120-150 100 1 100 100 120 10 120 (1) 6 40 3C BA 224-220 180 ... | OCR Scan |
1 pages, |
SFD89 SFD88 BAW13 1N463 BAV45 BA224-220 datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| PIN, I1, I, $1N638 1N638 1N638 1N638 PIN, O, O, $1N663 1N663 1N663 1N663 END SYM, $1I613 1I613 1I613 1I613, OR, SCHNM=OR2, LIBVER=2.0.0 PIN, I0, I, $1N660 , INV PIN, I1, I, B13 PIN, O, O, $1N660 END SYM, $1I621 1I621 1I621 1I621, AND, SCHNM=AND2, LIBVER=2.0.0 PIN, I0, I, $1N www.datasheetarchive.com/download/14652276-958075ZC/men9k.tar |
Xilinx | 05/09/1996 | 752 Kb | TAR | men9k.tar |
| PIN, I1, I, $1N638 1N638 1N638 1N638 PIN, O, O, $1N663 1N663 1N663 1N663 END SYM, $1I613 1I613 1I613 1I613, OR, SCHNM=OR2, LIBVER=2.0.0 PIN, I0, I, $1N660 , INV PIN, I1, I, B13 PIN, O, O, $1N660 END SYM, $1I621 1I621 1I621 1I621, AND, SCHNM=AND2, LIBVER=2.0.0 PIN, I0, I, $1N www.datasheetarchive.com/download/21106798-996434ZC/men9k.tar |
Xilinx | 09/04/1997 | 752 Kb | TAR | men9k.tar |
| PIN, I1, I, $1N638 1N638 1N638 1N638 PIN, O, O, $1N663 1N663 1N663 1N663 END SYM, $1I613 1I613 1I613 1I613, OR, SCHNM=OR2, LIBVER=2.0.0 PIN, I0, I, $1N660 , INV PIN, I1, I, B13 PIN, O, O, $1N660 END SYM, $1I621 1I621 1I621 1I621, AND, SCHNM=AND2, LIBVER=2.0.0 PIN, I0, I, $1N www.datasheetarchive.com/download/48323387-996476ZC/men9k.tar |
Xilinx | 09/04/1997 | 746.5 Kb | TAR | men9k.tar |
| PIN, I1, I, $1N638 1N638 1N638 1N638 PIN, O, O, $1N663 1N663 1N663 1N663 END SYM, $1I613 1I613 1I613 1I613, OR, SCHNM=OR2, LIBVER=2.0.0 PIN, I0, I, $1N660 , INV PIN, I1, I, B13 PIN, O, O, $1N660 END SYM, $1I621 1I621 1I621 1I621, AND, SCHNM=AND2, LIBVER=2.0.0 PIN, I0, I, $1N www.datasheetarchive.com/download/25672448-986353ZC/wcd01650.z |
Xilinx | 13/07/1998 | 111.67 Kb | Z | wcd01650.z |
| 0 1 0 IRQ14 IRQ14 IRQ14 IRQ14 S 35 1 L 2285 550 10 0 3 0 1 0 IRQ15 IRQ15 IRQ15 IRQ15 B 19 1 N 660 J 805 750 1 J 1340 750 2 J 1300 www.datasheetarchive.com/download/92000591-960705ZC/pnp.zip (IRQ_SEL.1) |
Xilinx | 05/09/1996 | 172.12 Kb | ZIP | pnp.zip |
| 35 1 L 2285 550 10 0 3 0 1 0 IRQ15 IRQ15 IRQ15 IRQ15 B 19 1 N 660 J 805 750 1 J 1340 750 2 J 1300 750 5 J 1300 www.datasheetarchive.com/download/92000591-960705ZC/pnp.zip (IRQ_SEL.1) |
Xilinx | 05/09/1996 | 172.12 Kb | ZIP | pnp.zip |
| 0 1 0 IRQ14 IRQ14 IRQ14 IRQ14 S 35 1 L 2285 550 10 0 3 0 1 0 IRQ15 IRQ15 IRQ15 IRQ15 B 19 1 N 660 J 805 750 1 J 1340 750 2 J 1300 www.datasheetarchive.com/download/85642272-960682ZC/pnp.zip (IRQ_SEL.1) |
Xilinx | 05/09/1996 | 172.12 Kb | ZIP | pnp.zip |
| 35 1 L 2285 550 10 0 3 0 1 0 IRQ15 IRQ15 IRQ15 IRQ15 B 19 1 N 660 J 805 750 1 J 1340 750 2 J 1300 750 5 J 1300 www.datasheetarchive.com/download/85642272-960682ZC/pnp.zip (IRQ_SEL.1) |
Xilinx | 05/09/1996 | 172.12 Kb | ZIP | pnp.zip |
| DSTD00 DSTD00 DSTD00 DSTD00.1 1202 | Wirelist created using version 4.09. V 4.09 K 271149835700 DSTD00 DSTD00 DSTD00 DSTD00 DW DSTD00 DSTD00 DSTD00 DSTD00 SA SCH_FILE_PATH=/HOME2/MIKE/DSTD/SCH/DSTD00 /HOME2/MIKE/DSTD/SCH/DSTD00 /HOME2/MIKE/DSTD/SCH/DSTD00 /HOME2/MIKE/DSTD/SCH/DSTD00.1 SA SHEET=1 SA NUM_PINS=3 SA NUM_NETS=1 SA MAX_ARRIVAL=0.00 SA GATE_AREA=2.00 SA DES_PGM_VERSION=V1.12 (COMPILED ) SA DES_PGM_NAME=RETARGET SA DES_CMD_LINE=RETARGET TST00 TST00 TST00 TST00 DSTD00 DSTD00 DSTD00 DSTD00 -NOE -TEC=DIO -INLIB=TTL -INLIB=PLD SA SCH_FILE_TIME=14:45 SA SCH_FILE_DATE=31OCT91 31OCT91 31OCT91 31OCT91 SA SCH_FILE_NAME=DSTD00 DSTD00 DSTD00 DSTD00 SA WIR_FILE_TIM www.datasheetarchive.com/download/15930325-39479ZC/dstd.zip (WIR.LIB) |
Atmel | 19/01/1998 | 589.7 Kb | ZIP | dstd.zip |
| 646_2_INV ) ; U647 : X_AND2 port map ( I0 => N659 , I1 => N660 , O => U647_2_INV ) ; U www.datasheetarchive.com/download/52728641-985501ZC/wcd00ea6.zip (time_sim.vhd) |
Xilinx | 12/02/1999 | 7683.96 Kb | ZIP | wcd00ea6.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 1N6609 | N/A | Metal Can LED Lamp - Gold-plated leads | |
|
| 1N6609+JAN | Defense Supply Center Columbus | Metal Can LED Lamp - Gold-plated leads | |
|
| 1N6609+JANTX | Defense Supply Center Columbus | Metal Can LED Lamp - Gold-plated leads | |
|
| 1N660A | N/A | General Purpose Fast Rectifier | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 1N4148 | 1N4148 Buy | 1N660 Buy | Alpha Industries Inc. | Close | Small Signal Diode | High Conductance Fast Diode |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 1N660 Buy | DA1701 Buy | |
| 1N660/A Buy | 1N3070 Buy | |
| 1N660/A Buy | BA195 Buy | |
| 1N660/A Buy | BAW49 Buy | |
| 1N660/A Buy | BAX15 Buy | |
| 1N660/A Buy | BAX16 Buy | |
| 1N660/A Buy | BAX17 Buy |