MIL-PRF-19500/567D MIL-PRF-19500/567C 1N6492 1N6492U4 MIL-PRF-19500 MIL-STD-750 - Datasheet Archive

 

MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion

 

INCH-POUND MIL-PRF-19500/567D MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492 1N6492, 1N6492U4 1N6492U4, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500 MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (TO-205AF, formerly low profile TO-39), and figure 2 (U4). * 1.3 Maximum ratings. 1N6492 1N6492 1N6492U4 1N6492U4 VRSM VR (1) IF 1 (AV) TA = +25°C (2) IF 1 (AV) TC = +100°C (3) IO TC = +100°C (4) IFSM RJC (5) RJA (5) TJ and TSTG V (pk) Type VRRM and VRWM (1) V (pk) V dc A dc A dc A dc A (pk) °C/W °C/W °C 45 45 54 54 45 45 1.20 1.20 4 4 3.60 3.60 175 175 -65 to +175 80 80 12.0 12.0 (1) Full rated VRRM and VRWM with appropriate average forward current (see note (3) is applicable over the range of TC from -55°C to +135°C. Full rated VR is applicable over the range of TC from -55°C to +120°C. With these maximum voltages and case temperatures, TJ +175°C. (2) This rating requires no special mounting, heat sinking, or forced air flow across the device. (3) Average current with a 50 percent duty cycle square wave including reverse voltage amplitude equal to the magnitude of full rated VRWM. Derate linearly at 114 mA dc/°C for TC > +100°C (to 0 at TC = +135°C); if VRWM = 20, derate IF (AV) at 62 mA/°C, to 0 at TC = +165°C. (4) Average current with an applied sine wave including reverse voltage equal to the magnitude of full rated VRWM. Derate linearly at 103 mA dc/°C for TC > +100°C; if VRWM = 20, derate at 55 mA/°C. (5) For thermal impedance see figure 3. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://assist.daps.dla.mil . AMSC N/A FSC 5961 MIL-PRF-19500/567D MIL-PRF-19500/567D * 1.4 Primary electrical characteristics at TA = +25°C, unless otherwise indicated. Type VFM2 CT VFM1 IRM IRM IFM = 4 A (pk) IFM = 2 A (pk) VRM = 45 V (pk) VRM = 45 V (pk) VR = 5 V dc TJ = +125°C TJ = +25°C V (pk) 1N6492 1N6492 1N6492U4 1N6492U4 V (pk) mA (pk) mA (pk) pF .68 .68 .56 .56 20 20 2.0 2.0 450 450 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-19500 MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 MIL-PRF-19500, and on figures 1 and 2 herein. 2 MIL-PRF-19500/567D MIL-PRF-19500/567D TO-39 Ltr CD CH HD LC LD LL LU L1 L2 P Q r TL TW Term 1 Term 2 Term 3 1 Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .160 .180 4.07 4.57 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.7 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .010 0.254 .029 .045 0.74 1.14 .028 .034 0.72 0.86 45° TP 45° TP Anode Open (no connection) Cathode (case) Notes 7 8, 9 8, 9 8, 9 8, 9 8, 9 6 5 10 7 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.279 mm). 4. Dimension TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 8. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 9. All three leads. 10. Radius (r) applies to both inside corners of tab. 11. Cathode is electrically connected to the case. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions (TO-205AF - formerly low profile TO-39). 3 MIL-PRF-19500/567D MIL-PRF-19500/567D U4 1 2, 3 Dimensions Symbol BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 TERM 1 TERM 2 TERM 3 Inches Min 0.215 0.145 0.049 0.085 0.045 0.070 0.035 0.135 0.047 0.030 0.020 Cathode Anode 1 Anode 2 Max 0.225 0.155 0.075 0.020 0.125 0.075 0.095 0.048 0.145 0.057 0.070 0.035 Millimeters Min Max 5.46 5.72 3.68 3.94 1.24 1.91 0.508 2.16 3.17 1.14 1.90 1.78 2.41 0.889 1.21 3.43 3.68 1.19 1.45 0.762 1.78 0.508 0.88 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions and configuration (U4). 4 MIL-PRF-19500/567D MIL-PRF-19500/567D 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500 MIL-PRF-19500, MIL-STD-750 MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500 MIL-PRF-19500. * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 MIL-PRF-19500) 3 9 10 11 12 13 Measurement JANS level JANTX and JANTXV levels Test condition F, TLOW = -55°C and THIGH = +175°C. Reverse energy test (see 4.5.2) VFM2 , IRM1. Test condition F, TLOW = -55°C and THIGH = +175°C. Not applicable. TC = +130°C. Reverse energy test (see 4.5.2), VFM2 ±50 mV of initial value, IRM1 ±100 percent or 500 A, whichever is greater. See 4.3.1. Subgroup 2 of table I herein. Reverse energy test (see 4.5.2), VFM2 ±50 mV, IRM1 ±100 percent or 500 A, whichever is greater. Scope display evaluation (see 4.5.5). TC = +130°C. Reverse energy test (see 4.5.2), VFM2 , IRM1. See 4.3.1. Subgroup 2 of table I herein. Reverse energy test (see 4.5.2), VFM2 ±50 mV, IRM1 ±100 percent or 500 A, whichever is greater. Scope display evaluation (see 4.5.5). 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VR = VRWM. TA = +50°C maximum, any clips or heat sink configuration may be utilized provided that IO and TA are adjusted to achieve TJ = +135°C minimum, VR = 45 V (pk), IO = 0.75 A dc minimum, f = 60 Hz. Mounting and test conditions shall be in accordance with Method 1038 of MIL-STD-750 MIL-STD-750 , test condition B. 5 MIL-PRF-19500/567D MIL-PRF-19500/567D 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500 MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500 MIL-PRF-19500. Subgroup Method Condition B3 1051 Temperature cycling, condition C, TLOW = -55°C, THIGH = +175°C. B4 1037 IO = 0.75 A, TA = +25°C; VRM = 45 V, ton = toff = 3 minutes for a minimum of 2,000 cycles. B5 1027 IF = 3.2 A dc minimum adjust TA or IF as required IF or TA to achieve a lot TJ = +275°C. B6 4081 See 4.5.3, RJC 12.0°C/W. 4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV of MIL-PRF-19500 MIL-PRF-19500). Subgroup Method Condition B2 1051 Temperature cycling, condition C. B3 1027 TA = +25°C, IO = 0.75 A, VRM = 45 V (pk). B3 2037 Condition A, all internal wires must be pulled separately. B5 4081 See 4.5.3, RJC 12.0°C/W. B6 1032 TA = +175°C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500 MIL-PRF-19500. Subgroup Method C6 1026 * C6 Condition IO = 0.75 A, VRWN = 45 V(pk), TA = +25°C. Operational power cycling, see 4.5.6, TC(LOW) = +40°C, +0, -15°C; TC(HIGH) = +115°C +5, -0°C, 5,000 cycles, n = 22, c = 0. 6 MIL-PRF-19500/567D MIL-PRF-19500/567D 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750 MIL-STD-750. 4.5.2 Peak reverse energy test. The peak reverse energy test is to be performed as shown on figure 4 or equivalent. The diode under test must be capable of absorbing the reverse energy, as defined, and meet the electrical requirements of table I, subgroup 4 herein. 4.5.3 Thermal resistance. Thermal resistance shall be measured in accordance with method 4081 of MIL-STD-750 MIL-STD-750. The case reference temperature shall be held to equilibrium within the range of +20°C to +70°C during the power application, and shall be measured at the hottest part of the case. The following measurements shall apply: IF1 = 1 A, at 97 percent minimum duty factor; IF2 = 10 mA dc. 4.5.4 Reverse current at peak reverse voltage, alternate test. The reverse current at peak reverse voltage test may be satisfied by performing the reverse energy test of 4.5.2 and measuring breakdown voltage to ensure V(BR) 54 V (pk) with IRM = 2.0 A (pk). See figure 4. 4.5.5 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method 4023 of MIL-STD-750 MIL-STD-750. Scope display evaluation may be performed on ATE (automatic test equipment) for screening only with the approval of the qualifying activity. Scope display evaluation in group A shall be performed on an oscilloscope. One hundred percent scope test is required in the event of a group A failure, however group A resubmission criteria applies. 4.5.6 Operational power cycling (qualification only). One complete cycle for this test shall consist of the following two steps: Step 1, heat the case to the Tc(high) specified, by passing forward current through the diode under test. The reverse voltage shall be only enough to permit the reverse current to flow, and should be a maximum of 5 volts. Step 2, remove the applied current and allow the case temperature to cool to the TC(LOW) specified. Forward current shall be chosen to achieve the Tc(high) condition in 75 ±50 seconds. The cycling must be continuous until the required number of cycles has been completed. It is permissible to force cool the device during step 2. 7 MIL-PRF-19500/567D MIL-PRF-19500/567D * TABLE I. Group A inspection. MIL-STD-750 MIL-STD-750 Inspection 1/ Limits Symbol Method Conditions Unit Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Forward voltage 2/ IFM = 4.0 A(pk), pulsed (see 4.5.1) VFM2 0.68 V 4011 IFM = 2.0 A(pk), pulsed (see 4.5.1) VFM3 0.56 V 4011 IFM = 1.0 A(pk), pulsed (see 4.5.1) VFM4 0.48 V 4011 Reverse current leakage 4011 IFM = 8.0 A(pk), pulsed (see 4.5.1) VFM1 0.92 V 4016 VRM = 45 V(pk), pulsed method, (see 4.5.1) IRM1 2.0 mA IRM2 20 mA IRM3 200 mA Subgroup 3 2/ High temperature operation Reverse current leakage TA = +125°C 4016 High temperature operation Reverse current leakage TA = +175°C 4016 Low temperature operation Reverse current leakage VRM= 45 V(pk), pulsed method, (see 4.5.1) VRM= 45 V(pk), pulsed method, (see 4.5.1) TA = -55°C 4016 VRM = 45 V(pk), pulsed method, (see 4.5.1) IRM4 20 mA 4011 IFM = 2.0 A(pk), pulsed (see 4.5.1) VFM5 0.63 V Reverse current leakage at peak reverse voltage 4016 Pulsed method (see 4.5.1), VRSM = 54 V(pk), (alternate test, see 4.5.4) 2/ IRM5 2.0 A Capacitance 4001 VR = 5 V, .01 f 1 MHz, VSIG = 15 mV(p-p) CT 450 pF Scope display evaluation 4023 Sharp and stable (see 4.5.5), n = 116, c = 0 4066 IFSM= 80 A(pk), VRM = 45 V(pk), IO = 0.75 A ten surges of 8.3 ms each at 1 minute intervals, TA = +25°C Forward voltage Subgroup 4 Subgroup 5 Surge current Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan see MIL-PRF-19500 MIL-PRF-19500. 2/ Measurement point is on the lead .2 inch (5.08 mm) below the seating plane of the case. 8 MIL-PRF-19500/567D MIL-PRF-19500/567D * TABLE II. Groups B and C delta tests. 1/ 2/ Step MIL-STD-750 MIL-STD-750 Inspection Symbol Method Conditions Min Unit Limits Max 1. Forward voltage 4011 IFM = 4 A(pk) pulsed (see 4.5.1) VFM2 ±50 mV change from previous value 2 Reverse current 4016 VRM = 45 V(pk) pulsed (see 4.5.1) IRM1 +500 A dc or +100 percent of initial value, whichever is greater V mV 1/ The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 MIL-PRF-19500 are as follows: Subgroups 4 and 5, see table II herein, steps 1 and 2. 2/ The delta measurements for table E-VII of MIL-PRF-19500 MIL-PRF-19500 are as follows: Subgroup 6, see table II herein, steps 1 and 2. Maximum Thermal Impedance 10 1N6492 1N6492 and 1N6492U4 1N6492U4, solder mounted to copper heatsink, TC = +25°C Theta (C/W) 1 0.1 0.01 0.000001 0.00001 0.0001 0.001 Time (s) 0.01 0.1 1 * FIGURE 3. Thermal impedance graph (RJC) for 1N6492 1N6492 and 1N6492U4 1N6492U4 (TO-205AF and U4). 9 MIL-PRF-19500/567D MIL-PRF-19500/567D VG = 10 Volts RG = 50 PW = 30 s Duty cycle 1 percent Rin = 5.0 , 1 W RS = 0-1 , 1 W L = 260 H T = IRF130/2N6756 IRF130/2N6756 or equivalent Procedure: 1. With S open, adjust pulse width to test current of 2 A across RS. 2. Close S. Verify test current with current sense. 3. Read peak output voltage (see 4.5.4). FIGURE 4. Peak reverse energy test circuit. 10 MIL-PRF-19500/567D MIL-PRF-19500/567D 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES * (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 MIL-PRF-19500 are applicable to this specification.) * 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Lead finish (see 3.4.1). c. Product assurance level and type designator. d. Packaging requirements (see 5.1). * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML-19500 QML-19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2007-012) Review activities: Army - AR, MI Navy - MC, SH Air Force - 19, 71, 99 * NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at http://assist.daps.dla.mil . 11