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1N6095R GeneSic Semiconductor Inc Rectifier Diode visit Digikey Buy
1N6095 GeneSic Semiconductor Inc Rectifier Diode visit Digikey Buy

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1N6095 Datasheet

Part Manufacturer Description PDF Type
1N6095 America Semiconductor HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Original
1N6095 GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 25A DO4 Original
1N6095 International Rectifier SCHOTTKY RECTIFIER 25 Amp Original
1N6095 Micro Commercial Components 25 Amp Schottky 30 to 40 Volts Original
1N6095 Motorola Switch Mode Power Rectifiers Original
1N6095 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan
1N6095 America Semiconductor 1N6095 - HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Scan
1N6095 Diodes SCHOTTKY BARRIER RECTIFIERS Scan
1N6095 Microsemi 25 Amp Schottky Rectifier Scan
1N6095 Microsemi 25 A Schottky Rectifier Scan
1N6095 Motorola Switchmode Datasheet Scan
1N6095 Motorola European Master Selection Guide 1986 Scan
1N6095 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N6095 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N6095 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N6095 OPTEK Technology FAST RECOVERY RECTIFIERS Scan
1N6095 Unitrode International Semiconductor Data Book 1981 Scan
1N6095R America Semiconductor HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Original
1N6095R GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 25A DO4 Original
1N6095R America Semiconductor 1N6095 - HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Scan
Showing first 20 results.

1N6095

Catalog Datasheet MFG & Type PDF Document Tags

1N6095

Abstract: 20FQ020 Major Ratings and Characteristics «JEDEC registered value. © VrvvM = VRRM for 1N6095 & 06 tVR = IV. Description/Features The 20FQ and the 1N6095-96 Sohottky rectifier series ere both designed to operate et , constructon to protect against reverse energy transients. Applications for the 20FQ and 1N6095-96 Schottky , I«R 1N6095& 96 Series W 55C 05081 D 20FQ, 1N6095& 96 Series ~0 10 20 30 40 AVERAGEFORWARO CURRENT , 1N6095& 6 Series INPUT POLÌ JT 55C 05082 international. rectifier I«R! s ; 2 g 0.5 1
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OCR Scan
20FQ020 20FQ R/20FQ020 IN6095 0G05D77 1INI6095 D0-203AA
Abstract: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF = 25 A Features â , . Maximum ratings, at Tj = 25 °C, unless otherwise specified 1N6095 (R) 1N6096 (R) Unit VRRM , voltage VF Reverse current IR Conditions 1N6095 (R) 1N6096 (R) Unit IF = 25 A, Tj , / 1 °C/W 1N6095 thru 1N6096R / 2 1N6095 thru 1N6096R Package dimensions and terminal configuration GeneSiC Semiconductor
Original
DO-203AA

1N6095

Abstract: 1N6095 thru 1N6096R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features â'¢ â'¢ â'¢ â'¢ â'¢ Fast Switching Low forward voltage drop High surge capability High efficiency, low , , TJ = 125oC 1N6095(R) 30 1N6096(R) 40 Units V VRMS RMS reverse voltage Symbol , range Storage temperature Symbol Rth(JC) TJ Tstg 1N6095(R) 1N6096(R) 1.8 -55 to 150 , . 1N6095 thru 1N6096R Package Outline ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida â'" 201301
Naina Semiconductor
Original

55C05

Abstract: 1N6095 r WM © Ct ® -5V Tj 20FQ 30 27 645 675 2,100 1,900 29,500 20 to 45 2,000 1N6095 & 96 27.5 25* 380 400 , registered value. © V rvVM = VRRM fo r 1N6095 & 06 t V R = 1V. CASE STYLE AND DIMENSIONS A ll D lm e m , INTERNATIONAL RECTIFIER 55C 0 5 0 7 8 IN T E R N A T IO N A L . R E C T IF IE R 20FQ, 1N6095 & 96 Series , Voltage (T) (V) 1N6095 1N6096 - 20 30* 35 40* 45 ELECTRICAL SPECIFICATIONS 20FQ · fcavj Max , voltage application 2.0 2000 1000 1N6095 & 9 6 27.5 25* 380 400* 455 475 730 665 1050 940 10,500 0.60
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OCR Scan
55C05 0SD77

in6096

Abstract: UNITRODE POWER SCHOTTKY RECTIFIERS 25A, 30 and 40V 1N6095 IN6096 FEATURES â'¢ Very Low Forward Voltage â'¢ Low Recovered Charge â'¢ Rugged Package Design (DO-4) â'¢ High Efficiency for Low Voltage Supplies DESCRIPTION Unitrode's series of Schottky barrier power rectifiers is ideally suited for output , Resistance Junction to Case, R9Jc . 1N6095 1N6096 30V .40V . 30V , . MECHANICAL SPECIFICATIONS 1N6095, 1N6096 ins. mm A .078 MAX. 1.98 MAX. B .437 ± .015 11 10 ±0.38 C
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OCR Scan
UNITRODE
Abstract: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features â'¢ High Surge Capability â'¢ Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is , , unless otherwise specified 1N6095 (R) 1N6096 (R) Unit VRRM 30 40 V VRMS 21 , Reverse current IR Conditions 1N6095 (R) 1N6096 (R) Unit IF = 25 A, Tj = 25 °C VR = 20 , /silicon-products/schottky 1 °C/W 1N6095 thru 1N6096R www.genesicsemi.com/index.php/silicon-products GeneSiC Semiconductor
Original
Abstract: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features â'¢ High Surge Capability â'¢ Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is , ) 1N6095 (R) 1N6096 (R) Unit Repetitive peak reverse voltage VRRM 30 40 V RMS , Reverse current IR Conditions 1N6095 (R) 1N6096 (R) Unit IF = 25 A, Tj = 25 °C VR = 20 , /silicon-products/schottky 1 °C/W 1N6095 thru 1N6096R www.genesicsemi.com/index.php/silicon-products GeneSiC Semiconductor
Original

1N6095

Abstract: 1n6096 fit D if | fl3bflb0a OOO EBb l D J ~ 83 6 8 6 0 2 SOL ITRON D E V I C E S INC" 86 D 0 2361 D y - ¿>3 - / ? Bolitron SCHOTTKY RECTIFIERS 1N6095 1N6096 DEVICES, INC. POWER SCHOTTKY RECTIFIERS 25 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING LOW CAPACITANCE HERMETICALLY SEALED , D0-203AA (DO-4) ABSOLUTE MAXIMUM RATINGS 1N6095 V R SM v RRM 'o NON REPETITIVE PEAK REVERSE VOLTAGE , RECTIFIERS 1N6095 1N6096 INC 86 D 02 3 6 2 D 7"* - C3-/
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OCR Scan

1N6095

Abstract: 1n6096 MCC Features · · · · omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N6095 thru 1N6096 25 Amp Schottky Barrier Rectifier 30 to 40 Volts DO-4 B Metal of siliconrectifier , Voltage 30V 40V N M C J MCC Part Number 1N6095 1N6096 Maximum RMS Voltage P H F G D , , Duty Cycle 1% www.mccsemi.com 1N6095 thru 1N6096 Figure 1 Typical Forward Characteristics 200 , 400 1000 Junction Capacitance - pF versus Reverse Voltage - Volts www.mccsemi.com 1N6095
Micro Commercial Components
Original

1N5829

Abstract: 1N6095 M C J Part Number 1N5829( R ) 1N5830( R ) 1N6095( R ) 1N5831( R ) 1N6096( R , ) (1N6095~1N6096) 8.3ms, Half s i ne VF 0.58V IFM =25 A; TJ = 25 IR 2.0 mA 250 mA TJ = , Volts 200 Tj =150 C 100 60 600 450 1N5829~1N5831 300 150 1N6095~1N6096 0 1 2
Transys Electronics
Original

1N6095

Abstract: D227 Characteristics lF(AV) 1N 6095 1N 6096 25 Amp Description/Features The 1N6095, 96. Schottky rectifier has , and long term reliability · Hermetic packaging 1N6095, 1N6096. 25* Units A V A V °C , -4) Dimensions in millimeters and inches D-227 1N6095 1N6096 Voltage Ratings Part number VR Max. DC , ) DO-203AA(DO-4) D-228 I«R 1N6095 1N6096 10 15 20 25 30 35 40 45 , Impedance D-229 Characteristics 1N6095 1N6096 IOR I ! 10 20 30 (A) 40 Average
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OCR Scan
D227 TJ-70 1N609 D-230

diode 1n6095

Abstract: datasheets diode 1n6095 PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features , DO-203AA (DO-4) Dimensions in millimeters and inches www.irf.com 1 1N6095, 1N6096 PD-2.331 rev. A 12/97 Voltage Ratings Part number VR 1N6095 1N6096 30* 40* Max. DC Reverse , (Ibf-in) DO-203AA(DO-4) JEDEC * JEDEC Registered Values 2 www.irf.com 1N6095, 1N6096 PD , 1N6095, 1N6096 PD-2.331 rev. A 12/97 2 5 R J (D ) =2 ° / .0 CW th C C 10 2 A e g P w r L s -
International Rectifier
Original
IRFP460 40HFL40S02 diode 1n6095 datasheets diode 1n6095

1N6096

Abstract: 1N6095 MCC 1N6095 thru 1N6096 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features · · · · 25 Amp Schottky Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability , Storage Temperature: -65°C to +150°C B MCC Part Number 1N6095 1N6096 Maximum Recurrent Peak , 4.44 -10.29 4.15 4.80 -7.87 -8.89 0.51 1.65 1.53 2.54 NOTE MCC 1N6095
Micro Commercial Components
Original

KH 2222

Abstract: diode 1n6095 MOTOROLA TECHNICAL DATA SEMICONDUCTOR 1N6095 1N6096 SD41 1N6096 and SD41 are Motorola , max · Shipped 25 units per rail · Marking: 1N6095, 1N6096, SD41 M A X IM U M R A T IN G S R a tin , pF Rev 1 3-144 R ectifier D evice Data 1N6095,1N6096, SD41 H G U RE 1 - TYPIC AL , VOLTAGE (VOLTS) R ectifier D evice Data 3 -1 4 5 1N6095,1N6096, SD41 FIGURE 6 - 1 N 6 0 9 5 , ectifier Device Data 1N6095,1N6096, SD41 FIGURE 9 - SCHOTTKY RECTIFIER Copper Lead Motorola
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OCR Scan
KH 2222 jc 817 sd41
Abstract: J Part Number 1N5829( R ) 1N5830( R ) 1N6095( R ) 1N5831( R ) 1N6096( R ) Maximum , 800A 400A (1N5829~1N5831) (1N6095~1N6096) 8.3ms, Half s i ne VF 0.58V IFM =25 A; TJ = , 1N6095~1N6096 0 1 2 4 6 8 10 20 40 Cycles Number Of Cycles At 60Hz - Cycles 60 DACO Semiconductor
Original
Abstract: Major Ratings and Characteristics Characteristics 1N6095, 1N6096. Units lF(AV) Rectangular 25* A 30/40* V 400* A 0.86* V -65to125* The 1N6095, 96. Schottky rectifier , INTERNATIONAL RECTIFIER 1N6095 1N6096 bSE D â  UflSSMSS DD172bS 11b â  INR IO R Voltage Ratings Part number VR 1N6095 1N6096 30* 40* Max. DC Reverse Voltage (V) V p ^ Max. Working , RECTIFIER LSE D â  4fl55i|52 QDlTSbb D5E â  INR 1N6095 1N6096 I« R O 5 10 15 20 25 -
OCR Scan
S54S2 DD172L4 DD172 D0172 NBU95

32UNF-2A

Abstract: lN609 I 1N6095 1N6096 SD41 I SWITCHMODE POWER RECTIFIERS . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: I Guardring for Stress Low Forward 150°C Protection Voltage Operating Guaranteed Junction Reverse Temperature Capability Avalanche I MAXIMUM RATINGS b , Forward `" 1N6095* 1N6096* SD41 Unit , ~R$~ Current (Rated VR) 40 30
Motorola
Original
32UNF-2A lN609 DS6127 N6095 N6095/6

1N6095

Abstract: TECHNICAL DATA SEMICONDUCTOR MOTOROLA 1N6095 1N6096 SD41 1N6096 and SD41 are Motorola , Shipped 25 units per rail · Marking: 1N6095,1N6096, SD41 M A X IM U M RATINGS Rating Peak Repetitive , n it Volts S ym bol R«JC 1N 6095* 1N6096* SD 41 S ym bol Vr r m Vr w M VR 'o TC If s m 1N6095* 30 25 , Rectifier Device Data b3h?2S5 DflflM4c ì TE3 1N6095,1N6096, SD41 FIGURE 1 - TYPICAL FORWARD , Data 3-145 b3b?255 D0f l f l 450 745 1N6095,1N6096, SD41 lF(AV). AVERAGE FORW
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OCR Scan
DO-41

1N6095

Abstract: MOTOROLA 1N6095 1N6096 SD41 S C H O T T K Y B A R R IE R R E C T IF IE R S S W IT C H M O D , % 1N6095, 1N6096, SD41 FIG U R E 2 - M A X IM U M R E VE R SE C U R R E N T 'J r. R E V E R S E V , V R. R E V E R S E V O L T A G E I V 0 1 T S I 3-89 1N6095, 1N6096, SD41 F IG U R E 5 (A MPS) S D 4 1 C U R R E N T D E R A T IN G FIG U R E 6 - 1N6095 6 C U R R E N T D E R A T , THERMAL RESISTANCE t T I M E i ms ) 3-90 1N6095, 1N6096, SD41 FIG U R E 9 - S C H O T T
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OCR Scan

switching transistor 331

Abstract: datasheets diode 1n6095 PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF(AV) Rectangular 25* A 30/40* V IFSM @ 60Hz 400* A VF @ 80 Apk, TJ= 70°C 0.86* V TJ range - 65 to 125* The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C
International Rectifier
Original
switching transistor 331 C 331 Transistor schottky rectifier transistor C 331

SC175H045S

Abstract: 83CNQ060 .A, 1N6391 20FQ ., 21FQ .,., 1N6095,1N6096, SD41 40CPQ. 75H Q ., 85HQ. 61CMQ,., 121CNQ., 161CMQ , REFERENCE see table 6 for useage of die within each part number) Part Number SD241 SD41 SD51 1N6095 1N6096
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OCR Scan
SC175H045S 83CNQ060 60sq060 SC090H045 sc125h100a 61-cmq QD1Q277
Showing first 20 results.