HSMBJ5913 HSMBJ5956 HSMBJ5913-5956B 1N5913 1N5956B DO-214AA MILPRF-19500

SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides

HSMBJ5913 HSMBJ5913 thru HSMBJ5956 HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC registered 1N5913 1N5913 thru 1N5956B 1N5956B with identical electrical characteristics except it is rated at 3.0 W instead of 1.5 W with the lower thermal resistance features of this surface mount packaging. These plastic encapsulated Zeners have a moisture classification of Level 1 with no dry pack required and are also available in military equivalent screening levels by adding a prefix identifier as further described in the Features section. Microsemi also offers numerous other Zener products to meet higher and lower power applications. DO-214AA DO-214AA (see package notes) WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com FEATURES · · · · · · · APPLICATIONS / BENEFITS Surface mount equivalent to 1N5913 1N5913 to 1N5956B 1N5956B Ideal for high-density and low-profile mounting Zener voltage available 3.3V to 200V Standard voltage tolerances are plus/minus 5% with B suffix and 10 % with A suffix identification Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively RoHS Compliant devices available by adding "e3' suffix Options for screening in accordance with MILPRF-19500 MILPRF-19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. · · · · · · MAXIMUM RATINGS · · · · · MECHANICAL AND PACKAGING º Power dissipation at 25 C: 3.0 watts (also see derating in Figure 1). Operating and Storage temperature: -65ºC to +150ºC Thermal Resistance: 15 ºC/W junction to lead, º or 80 C/W junction to ambient when mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page) Steady-State Power: 3 watts at TL < 105oC, or 1.56 watts at TA = 25ºC when mounted on FR4 PC board with recommended footprint (also see Figure1) Forward voltage @200 mA: 1.2 volts (maximum) Solder Temperatures: 260 ºC for 10 s (maximum) Copyright © 2006 3-12-2006 REV G · · · · · · · CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 UL94V-0 TERMINALS: C-bend (modified J-bend) leads, TinLead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD-750 MIL-STD-750, method 2026 POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation MARKING: Includes part number without prefix (e.g. 5913B 5913B, 5926C 5926C, 5951D 5951D, etc.) TAPE & REEL option: Standard per EIA-481-1-A EIA-481-1-A with 12 mm tape 750 per 7 inch reel or 2500 per 13 inch reel (add "TR" suffix to part number) WEIGHT: 0.1 grams See package dimensions on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 HSMBJ5913-5956B HSMBJ5913-5956B,e3 · Regulates voltage over a broad operating current and temperature range Wide selection from 3.3 to 200 V Flexible axial-lead mounting terminals Nonsensitive to ESD per MIL-STD-750 MIL-STD-750 Method 1020 High specified maximum current (IZM) when adequately heat sinking Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B J-STD-020B HSMBJ5913 HSMBJ5913 thru HSMBJ5956 HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION JEDEC TYPE NUMBER TEST CURRENT IZT DYNAMIC IMPEDANCE ZZT KNEE CURRENT IZK KNEE IMPEDANCE ZZK REVERSE CURRENT IR (MAX.) REVERSE VOLTAGE VR MAX. DC CURRENT IZM Volts 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 mA 113.6 104.2 96.1 87.2 79.8 73.5 66.9 60.5 55.1 50 45.7 41.2 37.5 34.1 31.2 28.8 25 23.4 20.8 18.7 17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8.0 7.3 6.7 6.0 5.5 5.0 4.6 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.1 1.9 Ohms 10 9.0 7.5 6.0 5.0 4.0 2.0 2.0 2.5 3.0 3.5 4.0 4.5 5.5 6.5 7.0 9.0 10 12 14 17.5 19 23 28 33 38 45 53 67 70 86 100 120 140 160 200 250 300 380 450 600 700 900 1200 mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Ohms 500 500 500 500 500 350 250 200 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 4000 4500 5000 6000 6500 7000 8000 Adc 100 75 25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Volts 1.0 1.0 1.0 1.0 1.5 2.0 3.0 4.0 5.2 6.0 6.5 7.0 8.0 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.2 56 62.2 69.2 76 83.6 91.2 98.8 114 121.6 136.8 152 mA 908 832 768 696 638 588 534 482 440 400 364 328 300 272 250 230 200 183 166 150 136 124 110 100 90 82 76 68 62 58 52 48 44 40 36 32 30 26 24 22 20 18 18 14 NOTES: 1. No suffix indicates a +/-20% tolerance on nominal VZ. Suffix A denotes a +/-10% tolerance, B denotes a +/-5% tolerance, C denotes a 2% tolerance, and D denotes a +/-1% tolerance. 2. Zener voltage (VZ) is measured at TL = 30oC and 90 seconds after application of dc current. 3. The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. Copyright © 2006 3-12-2006 REV G Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 HSMBJ5913-5956B HSMBJ5913-5956B,e3 HSMBJ5913 HSMBJ5913 HSMBJ5914 HSMBJ5914 HSMBJ5915 HSMBJ5915 HSMBJ5916 HSMBJ5916 HSMBJ5917 HSMBJ5917 HSMBJ5918 HSMBJ5918 HSMBJ5919 HSMBJ5919 HSMBJ5920 HSMBJ5920 HSMBJ5921 HSMBJ5921 HSMBJ5922 HSMBJ5922 HSMBJ5923 HSMBJ5923 HSMBJ5924 HSMBJ5924 HSMBJ5925 HSMBJ5925 HSMBJ5926 HSMBJ5926 HSMBJ5927 HSMBJ5927 HSMBJ5928 HSMBJ5928 HSMBJ5929 HSMBJ5929 HSMBJ5930 HSMBJ5930 HSMBJ5931 HSMBJ5931 HSMBJ5932 HSMBJ5932 HSMBJ5933 HSMBJ5933 HSMBJ5934 HSMBJ5934 HSMBJ5935 HSMBJ5935 HSMBJ5936 HSMBJ5936 HSMBJ5937 HSMBJ5937 HSMBJ5938 HSMBJ5938 HSMBJ5939 HSMBJ5939 HSMBJ5940 HSMBJ5940 HSMBJ5941 HSMBJ5941 HSMBJ5942 HSMBJ5942 HSMBJ5943 HSMBJ5943 HSMBJ5944 HSMBJ5944 HSMBJ5945 HSMBJ5945 HSMBJ5946 HSMBJ5946 HSMBJ5947 HSMBJ5947 HSMBJ5948 HSMBJ5948 HSMBJ5949 HSMBJ5949 HSMBJ5950 HSMBJ5950 HSMBJ5951 HSMBJ5951 HSMBJ5952 HSMBJ5952 HSMBJ5953 HSMBJ5953 HSMBJ5954 HSMBJ5954 HSMBJ5955 HSMBJ5955 HSMBJ5956 HSMBJ5956 ZENER VOLTAGE VZ WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ TL = 30oC HSMBJ5913 HSMBJ5913 thru HSMBJ5956 HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION TA on FR4 PC board Typical Maximum Power in Watts Pd, Maximum Power Dissipation (mW) TL WWW . Microsemi .C OM GRAPHS Temperature ºC Square Wave Pulse Width (Non-Repetitive) in Milliseconds FIGURE 1 POWER DERATING CURVE FIGURE 2 TRANSIENT SURGE CAPABILITY A B C DIM A B C D E F G INCHES .260 .085 .110 mm 6.60 2.16 2.79 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX .052 .103 1.32 2.62 .160 .180 4.06 4.57 .130 .155 3.30 3.94 .205 .220 5.21 5.59 .075 .130 1.91 3.30 .030 .060 .76 1.52 .006 .016 .15 .41 HSMBJ5913-5956B HSMBJ5913-5956B,e3 Typical Capacitance in Picofarads PACKAGE DIMENSIONS & PAD LAYOUT NOTE: Dimension E exceeds the JEDEC outline in height as shown Zener Voltage VZ FIGURE 3 - CAPACITANCE vs. VZ CURVE Copyright © 2006 3-12-2006 REV G Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3