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Part : 1N5825 Supplier : Solid State Devices Manufacturer : Newark element14 Stock : - Best Price : $8.42 Price Each : $12.87
Part : 1N5825 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $31.65 Price Each : $33.59
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Part : 1N5825 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 286 Best Price : $34.00 Price Each : $42.27
Part : 1N5825 Supplier : Motorola Manufacturer : New Advantage Stock : 4 Best Price : - Price Each : -
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1N5825 Datasheet

Part Manufacturer Description PDF Type
1N5825 Motorola Hot Carrier Power Rectifier Original
1N5825 International Semiconductor SCHOTTKY RECTIFIER DIODE,METAL PACKAGE Scan
1N5825 Microsemi 5 Amp Schottky Rectifer Scan
1N5825 Motorola Switchmode Datasheet Scan
1N5825 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N5825 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5825 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N5825 N/A Shortform Data and Cross References (Misc Datasheets) Scan
1N5825 N/A Shortform Semicon, Diode, and SCR Datasheets Scan

1N5825

Catalog Datasheet MFG & Type PDF Document Tags

1N5825

Abstract: ://store.americanmicrosemiconductor.com/1n5825.html 4/12/2010 American Microsemiconductor , 1N5825 5 Amp Schottky Rectifier 16.75 Diodes Schottky Rectifiers General Purpose Am. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N5825 1N5825 5 Amp Schottky Rectifier Enter code INTER3 at checkout.* CUSTOMER , : Our Price: You Save: 1N5825 $ 20.94 $ 16.75 $ 4.19 Company Testimonials Store Policies Contact
American Microsemiconductor
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1N5825

Abstract: 1N5824 5 Amp Schottky Rectifier 1N5823, 1N 5824, 1N5825 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A _ .450 _ 11.43 Dia. B .980 - 24.89 - C - .300 - 7.62 D .046 .056 , Catalog Number Voltage Voltage 1N5823 20V 20V 1N5824 30V 30V 1N5825 40V 40V â'¢ Schottky Barrier , 1n5824 1n5825 i f(av) 5. oa 5. oa 5. oa i fsm 500a 500a 500a vfm .330v .340v .350v vfm ,360v .370v , ) 466-3775 www. m ¡erosemi, com 1N5823, 1N5824, 1N5825 Figure 1 Typical Forward Characteristics 100 80 60
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OCR Scan
TE 2161 380v
Abstract: 5 Amp Schottky Rectifier 1N5823. 1N5824. 1N5825 Dim. Inches Minimum A B C D E M illim eter Maximum Minimum Maximum Notes .450 _ 11.43 â'" -.980 -.046 - 24.89 Dia. â'" .300 .056 .350 â'" 1.17 â'" 7.62 1.42 8.89 Dia. Dia. -II- D Microsemi Catalog Number Working Peak Reverse Voltage 1N5823 1N5824 1N5825 â , 1470pF 1N5824 5.0A 500A .340V .370V .490V 10mA 125mA 1470pF 1N5825 5.0A 500A .350V -
OCR Scan

1N5824

Abstract: 1N5825 5 Amp Schottky Rectifier N5823, 1N5824. 1N5825 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A _ .450 _ 11.43 Dia. B .980 - 24.89 - C - .300 - 7.62 D .046 .056 1.17 1.42 Dia. E - .350 - 8.89 Dia. Working Repetitive Microsemi Peak Reverse Peak Reverse Catalog Number Voltage Voltage 1N5823 20V 20V 1N5824 30V 30V 1N5825 40V 40V â'¢ Schottky Barrier , 1n5824 1n5825 i f(av) 5. oa 5. oa 5. oa i fsm 500a 500a 500a vfm .330v .340v .350v vfm ,360v .370v
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OCR Scan
Abstract: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5823 thru 1N5825 SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 TO 40 Volts CURRENT - 5.0 Ampere FEATURES â  High R eliability C ase: W elded, herm etically sealed C o n stru ctio n â  S chottky B arrier Junction ® )I , < Operating Tem perature Range 1N5825 VR RMS Reverse Voltage Typical Thermal Resistance (Note 2 , T00D 37fl DDDGbSb 0ES 1N5823 thru 1N5825 RATING AND CHARACTERISTIC CURVES LEAD T E M P E R A TU -
OCR Scan
T0DD37

1N5823

Abstract: 1N5824 , 1N5825 Series Due to the demand by our customers for the 1N5823 ­ 1N5825 Schottky device, Microsemi
Microsemi
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1N3295 1N3289 1N3291 1N3293 1N3294 DO-205AA MILSTD-19500/246

1N5825

Abstract: N5824 MOTOROLA TECHNICAL DATA SEMICONDUCTOR 1N5823,1N5824 1N5825 1N5823 and 1N5825 are Motorola , · Marking: 1N 5823.1N5824,1N5825 'M A X I M U M R A T IN G S Rating Peak Repetitive Reverse Voltage , 10 en il ?» ^ N3 " < < » a S S f f T s s 2 A 1 « A *9 1N5823,1N5824,1N5825 , s f O SS2LC 1ER s V \ \ \ O 3) 5 > a o o < 1N5823,1N5824,1N5825 >L , V) 3 D m 1N5825 - < 0 V 1N5824 1N5823 - 2 0 V (V O L T S ) a . 5 s 0 s g «» ^ § ô
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OCR Scan
N5824 diode 1N5825 1n6823 1N5824 ON marking Bq sot23 DO-41

1n5824 vishay

Abstract: 12v,-12v DC ,2A power supply circuit , 1N5825 L1 68 H, L38 Typical Values CSS 0.1 F CDELAY 0.1 F RPull Up 4.7k http , LM2599 A. Figure 11 3A40V 1N5825 3A B , MBRS360 30WQ05 1N5825 MBR350 more to at SR504 MBR340 30WQ04 are rated to at , Series" D1: 5A, 40V Schottky Rectifier, 1N5825 L1: 47 H, L39, Renco, Through Hole RPULL , Aluminum Electrolytic Panasonic, "HFQ Series" D1: 5A, 40V Schottky Rectifier, 1N5825 L1: 47 H, L39
National Semiconductor
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1n5824 vishay 12v,-12v DC ,2A power supply circuit L39 Renco MURS620 67148290 Schott 67144160 3V5V12V LM2596 LM2599T-3 LM2599T-5 LM2599T-12 LM2599T-ADJ

A1W TRANSISTOR

Abstract: N4001 diode 1N5825 A1W 1N1204A D04 1N3673A D04 IN3992 D04 1N4817 D027 1N5826 D04 1N1205 S27 1N3735 D09 1N3995 D04 , 1N5820 A282 1N6095 D04 1N5821 A282 1N6096 D05 1N5823 A282 1N6097 D05 1N5824 A282 1N6098 D05 1N5825
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OCR Scan
1N3981 1N4822 A109C A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 1N5815 Diode 403SE 1N1183 1N1615 1N3743 1N4006 1N5002
Abstract: mA over temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to fulfill , 330 S Q1 Q R 2 PWM D1 1N5825 UVLO L 190 mH Thermal Reference + + EA , 330 S D1 1N5825 Q1 Q R 2 PWM L 190 mH UVLO *RG 620 D4 1N4148 Thermal , L 190 mH D1 1N5825 Thermal Reference + + EA R1 RF 0.47 Test VO â'12 V/1.7 , , MC33167 Vin 24 V + 4 ILIMIT + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO ON Semiconductor
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MC34167 MC34167/D

MC34167T

Abstract: 4.0 mc tdk emitter to 0.5 V, the collector current will be in the range of 100 µA over temperature. A 1N5825 or , 4 + S Q R PWM UVLO Q1 2 D1 1N5825 Cin 330 Thermal Reference + EA 1 5 CF 0.1 RF 68 k R1 + R2 6.8 k , MTP3055EL D2 1N5822 + Q1 2 Cin 330 D1 1N5825 L 190 µH Thermal VO 28 V/0.9 A 3 *Gate resistor , Vin 12 V + Oscillator ILIMIT 4 + S Q R PWM UVLO Q1 2 L 190 µH D1 1N5825 Reference + EA 1 5 CF 0.47 RF , ILIMIT 4 + S Q R PWM UVLO 2 1N5825 MUR110 + Thermal Reference + EA 1 5 0.1 68 k + 6.8 k 1000 + VO1 5.0 V
ON Semiconductor
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MC34167T 4.0 mc tdk MC34167 Application Notes 1N5404 equivalent

MC33167

Abstract: MC34167D emitter to 0.5 V, the collector current will be in the range of 100 mA over temperature. A 1N5825 or , V + 4 ILIMIT + Oscillator Cin 330 S Q1 Q R 2 PWM D1 1N5825 UVLO , S D1 1N5825 Q1 Q R 2 PWM L 190 mH UVLO *RG 620 D4 1N4148 Thermal , Oscillator Cin 330 S Q1 Q R 2 PWM UVLO L 190 mH D1 1N5825 Thermal Reference + , + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO MUR110 VO3 1000 -12 V/200 mA
ON Semiconductor
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MC34167D MC34167 MC33167 l 0850 MC34167TG MC33167TG M1496

MC34167 Application Notes

Abstract: 3055E µA over temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to fulfill , 2 PWM D1 1N5825 UVLO L 190 µH Thermal Reference + + EA R2 1 CF Test , Oscillator S D1 1N5825 Q1 Q R Cin 330 2 PWM L 190 µH UVLO *RG 620 D4 , ILIMIT + Oscillator Cin 330 S Q1 Q R 2 PWM UVLO L 190 µH D1 1N5825 , Vin 24 V + 4 ILIMIT + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO
ON Semiconductor
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3055E MC34167-D ac step-down transformer winding awg

GMT 0223

Abstract: GMT-0223 current will be in the range of 100µA over temperature. A 1N5825 or equivalent Schottky barrier rectifier , VIN 12V + 4 ILIMIT + Oscillator CIN 330 S Q1 Q R 2 PWM D1 1N5825 , Oscillator CIN 330 S Q1 Q R 2 Pulse Width Modulator UVLO L 190µH D1 1N5825 , 2 PWM UVLO 1N5825 MUR110 + T1 Thermal Reference + MUR110 VOUT3 ­12V/200mA , Switching Regulator TC33167 ILIMIT + 4 22 Oscillator S 0.01 1N5825 Q1 Q R
TelCom Semiconductor
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GMT 0223 GMT-0223 EA 5pin transistor simple 12v to 19v converter 12V DC to 24V dC converter circuit diagram 58350-A2 D-82152

mc33167 applications

Abstract: MC34167 emitter to 0.5 V, the collector current will be in the range of 100 mA over temperature. A 1N5825 or , ILIMIT + Oscillator Cin 330 S D1 1N5825 Q1 Q R 2 PWM L 190 mH UVLO *RG , Oscillator Cin 330 S Q1 Q R 2 PWM UVLO L 190 mH D1 1N5825 Thermal Reference + , + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO MUR110 VO3 1000 -12 V/200 mA , MC34167, MC33167 4 ILIMIT Oscillator 22 0.01 1N5825 S Q1 Q R 2 UVLO PWM
ON Semiconductor
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mc33167 applications dc/tx/1/2/1257/MC34167 Application Notes ac step-up transformer winding awg 5903B 5930B MUR415 2N3906

MC34167 Application Notes

Abstract: MC33167T mA over temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to fulfill , 2 PWM D1 1N5825 UVLO L 190 mH Thermal Reference + + EA R2 1 CF Test , + 4 ILIMIT + Oscillator Cin 330 S D1 1N5825 Q1 Q R 2 PWM L 190 , D1 1N5825 Thermal Reference + + EA R1 CF Test RF 0.47 5 3 4.7 k , 2 PWM 1N5825 UVLO MUR110 VO3 1000 -12 V/200 mA + Thermal T1 Reference +
ON Semiconductor
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MC33167T MC34167T equivalent d2t 78 zener diode data IC M1496 5.0 A Step-Up/Down Inverting Switching Regulator IN 965 b zener diode

in5823

Abstract: 1N5823 MOTOROLA IN5823, 1N5824 1N5825 MBR5825H, HI D esigners Data Sheet HOT CARRIER POWER , N 5 8 2 3 -1 N 5 8 2 5 3-71 1N5823, 1N5824, 1N5825, MBR5825H, H1 N O TE 1 D E T E R M , R D C U R R E N T 3-72 1N5823, 1N5824, 1N5825, MBR5825H, H1 T H E R M A L C H A R A C T E , e n c e is a t c a t h o d e e n d T I = Jij n e t ' o n 1N5823, 1N5824, 1N5825, MBR5825H, H1 , A G E ( VOL TS? 3-74 1N5823, 1N5824, 1N5825, MBR5825H, H1 N O T E 5 - H I- flE L P R O G R
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OCR Scan
MBR5825

MC34167 Application Notes

Abstract: 1N5825 µA over temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to fulfill , 2 PWM D1 1N5825 UVLO L 190 µH Thermal Reference + + EA R2 1 CF Test , Oscillator S D1 1N5825 Q1 Q R Cin 330 2 PWM L 190 µH UVLO *RG 620 D4 , ILIMIT + Oscillator Cin 330 S Q1 Q R 2 PWM UVLO L 190 µH D1 1N5825 , Vin 24 V + 4 ILIMIT + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO
ON Semiconductor
Original
step down transformer to 15 V step up convertor

1SS133T-77

Abstract: 1SS400TE61 FST50100-ND 1N5825-ND Package DO-4 DO-5 DO-214AB DO-214BA Half Pak MD3CC SOT-227 TO-220AB TO , FST31180 MS1645 FST30100 FST50100 1N5825 Switching Diodes DO-34 SOD-106 DO-35 2.7 29.0
DigiKey Electronics Catalog
Original
SBR3050-ND SBR6045-ND CPT600100-ND 1SS133T-77 1SR154-400TE25 1SS355TE-17 1SS400TE61 RLS4148TE-11 1SS133T77 DAN222TL SD41-ND SBR8050-ND SBR8215-ND LSM345JCT-ND

mps 0543

Abstract: dc/tx/1/2/1257/MC34167 Application Notes range of 100 µA over temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to , Oscillator Cin 330 S Q1 Q R 2 PWM D1 1N5825 UVLO L 190 µH Thermal Reference , Cin 330 S D1 1N5825 Q1 Q R 2 PWM L 190 µH UVLO *RG 620 D4 1N4148 , S Q1 Q R 2 PWM L 190 µH UVLO D1 1N5825 Thermal Reference + + EA R1 , Output Converter Vin 24 V + 4 ILIMIT + Oscillator 1000 S Q R 2 PWM 1N5825
Motorola
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mps 0543 1PHX33012-2

IN5823

Abstract: 1N5823 MOTOROLA TECHNICAL DATA SEMICONDUCTOR IN 5823, 1N5824 1N5825 1N S 8 2 3 a n d 1 N 5 8 2 5 a re M o to r o la P r e fe r re d D e v ic e s Designer's Data Sheet Pow er R ectifiers . . . e m p loying the S cho ttky B a rrie r p rin cip le in a large a rea m e tal-to-silico n p o w e r , a i 1N5823,1N5824,1N5825 T H E R M A L C H A R A C T E R IS T IC S F IG U R E 5 T H E R M A , Data 1N5823, 1N5824, 1N5825 F IG U R E 7 - T Y P IC A L F O R W A R D V O L T A G E F IG U R
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OCR Scan

1N5824

Abstract: MBR5825 MOTOROLA SC (DIODES/OPTO) b4E D b3b?255 000b2b3 757 NOT? MOTOROLA TECHNICAL DATA SEMICONDUCTOR IN 5823 , 1N5824 1N5825 MBR5825 ,H,H1 1N5825 is a Motorola Preferred Device D e s ig n e r , SC (D IO DE S / O P T O ) b4E D b 3 b 7 2 5 5 G0fib2b4 h ^ 3 1N5823,1N5824,1N5825, MBR5825H, H1 M , / O P T O ) b4E D IB b 3 b 7 2 S S DDflbEbS 52T Hi HOT? 1N5823,1N5824,1N5825, MBR5825H, H1 THERMAL , T O R O L A SC ( D I O D E S / O P T O ) bME D b 3 b 7 2 5 5 GDflbSb? 3T2 1N5823,1N5824,1N5825
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OCR Scan
5825H

IN5825

Abstract: diode 1N5825 r I 1N5823 1N5824 1N5825 HOT CARRIER . POWER SCHOTTKY ,*!. BARRIER .~t`*{,1, ~.rir. ,>.,;, RECTI FI ER&F's:j$r .;~,.> ~ ~., RECTIFIERS . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometrv features , $: *:* ~t ?>: .* .,. , ,$. 20 30 VRSM 24 36 VR(RMS) Voltage 1N5825 14 21 , 1N5824 1N5825 Unit volts `F (1) (iF=3.0Amp) ANODE ~6 ~lA 0.056 L .[ (Tc = 25
Motorola
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IN5825 IN5825 diode diode 5 ampe Motorola MAV 2

MC34167 Application Notes

Abstract: MC34167T equivalent emitter to 0.5 V, the collector current will be in the range of 100 mA over temperature. A 1N5825 or , ILIMIT 4 + S Q R PWM UVLO Q1 2 D1 1N5825 Cin 330 Thermal Reference + EA 1 CF 0.1 RF 68 k R1 + R2 6.8 k , 2 Cin 330 D1 1N5825 L 190 mH Thermal VO 28 V/0.9 A 3 5 *Gate resistor RG, zener , MC34167, MC33167 Vin 12 V + Oscillator ILIMIT 4 + S Q R PWM UVLO Q1 2 L 190 mH D1 1N5825 Reference + EA 1 , , MC33167 Vin 24 V + Oscillator ILIMIT 4 + S Q R PWM UVLO 2 1N5825 MUR110 + Thermal Reference + EA 6.8 k 1
ON Semiconductor
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MC33167D2T 5925B TDK t6 PT3595 tdk 4.0 mc MC33167TH MC33167TV MC33167TVG MC34167D2T MC34167TH

d2t 78 zener diode data

Abstract: MC34167T equivalent temperature. A 1N5825 or equivalent Schottky barrier rectifier is recommended to fulfill these requirements , Q R 2 PWM D1 1N5825 UVLO L 190 µH Thermal Reference + + EA R2 1 Test , 4 ILIMIT + Oscillator Cin 330 S D1 1N5825 Q1 Q R 2 PWM L 190 µH , D1 1N5825 Thermal Reference + + EA R1 1 Load Regulation Output Ripple Short Circuit , Converter Vin 24 V + 4 ILIMIT + Oscillator 1000 S Q R 2 PWM 1N5825 UVLO
Motorola
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965 ic data General Magnetics M1496-A transistor mtp 3055e emi 0223
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