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1N5821-TP Micro Commercial Components Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 visit Digikey Buy
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1N5821-E3/54 Vishay Semiconductors DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode visit Digikey Buy

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1N5821 Datasheet

Part Manufacturer Description PDF Type
1N5821 Bytes 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5821 Daesan Electronics CURRENT 3.0 Amperes VOLTAGE 20 to 40 Volts Original
1N5821 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original
1N5821 Diodes 3.0A SCHOTTKY BARRIER RECTIFIERS Original
1N5821 Diodes 3.0A SCHOTTKY BARRIER RECTIFIERS Original
1N5821 Diodes Short Form Selection Guide Original
1N5821 Diotec Diode, 3A, 30V, Schottky Barrier Rectifier Original
1N5821 Diotec Si-Schottky-Rectifiers Original
1N5821 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original
1N5821 Fagor 30 V, 3 A schottky barrier rectifier Original
1N5821 Fairchild Semiconductor 3.0 Ampere Schottky Barrier Rectifiers Original
1N5821 Fairchild Semiconductor Schottky Rectifiers Original
1N5821 FCI Diode, 3A, 30V, Barrier Schottky Diode Original
1N5821 Formosa 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5821 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original
1N5821 General Semiconductor DIODE SCHOTTKY DIODE 30V 3A 2DO-201AD Original
1N5821 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original
1N5821 Good-Ark SCHOTTKY BARRIER RECTIFIER Original
1N5821 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original
1N5821 Invac 30 V, 3 A schottky barrier rectifier Original
Showing first 20 results.

1N5821

Catalog Datasheet MFG & Type PDF Document Tags

marking RAV

Abstract: DIODE 1N5822 1N5820 20 V 1N5821 30 V 1N5822 40 V Vrwm crest working reverse voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V Vr continuous reverse voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V 'f , MIN. MAX. UNIT vB continuous reverse voltage 1N5820 _ 20 V 1N5821 â'" 30 V 1N5822 - 40 V VRRM repetitive peak reverse voltage 1N5820 1N5821 - 20 30 V V 1N5822 - 40 V VRWM crest working reverse voltage 1N5820 â'" 20 V 1N5821 - 30 V 1N5822 - 40 V !RAV) average forward current
-
OCR Scan
marking RAV DIODE 1N5822 SOD84A diode schottky 1N5822 n5822 1N58 1N5820ID/21ID/22ID VCB842 1N5820ID MC3841 S3T31

1N5822

Abstract: DIODE 1N5822 Axial Lead 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821RL Axial Lead , 74°C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . , : 1N5820, 1N5821, 1N5822 AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MAXIMUM RATINGS Please See the , 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive
ON Semiconductor
Original
1N5820RL FULL WAVE RECTIFIER CIRCUITS 1N5822RL 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 1N582 1500/T 1N5820/D

1N5822

Abstract: voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V 1N5820 20 V 1N5821 30 V 1N5822 40 V 1N5820 20 V 1N5821 30 V 1N5822 40 V IraV , voltage VR 1N5820 20 V 1N5821 - 30 V 1N5822 - 40 V 20 V repetitive peak reverse voltage VflRM 1N5820 1N5821 - 30 V 1N5822 - 40 V 20 V 1N5821 _ 30 V 1N5822 - 40 V 3 A 1.3 A 80 A crest
-
OCR Scan
53T31 N5820ID/21ID/22ID MSB023 CB843 1N5820ID/211D/22ID MSA203

RG4 DIODE

Abstract: 1N5821 voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V Vrwm crest working reverse voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V Vr continuous reverse voltage 1N5820 20 V 1N5821 30 V 1N5822 40 V , CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage 1N5820 _ 20 V 1N5821 - 30 V 1N5822 - 40 V Vww repetitive peak reverse voltage 1N5820 - 20 V 1N5821 - 30 V 1N5822 - 40 V VRWM crest working reverse voltage 1N5820 - 20 V 1N5821 - 30 V 1N5822 - 40 V Wv) average
-
OCR Scan
IEC134 MCB843 MCB841 RG4 DIODE b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE T-03-15

1N5822RL

Abstract: 1N5820 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel , °C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . , : 1N5820, 1N5821, 1N5822 AXIAL LEAD CASE 267­05 (DO­201AD) STYLE 1 MAXIMUM RATINGS Please See the , , 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse
ON Semiconductor
Original

1N5821

Abstract: 1N5820 peak reverse voltage IF(RMS) 1N5820 1N5821 1N5822 20 30 40 RMS forward current 10 , 80 °C/W Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W 1N5820 1N5821 , conduction losses use the following equations : P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821 P = , forward current (1N5820/1N5821). PF(av)(W) 1.8 = 0.1 1.6 = 0.2 = 0.5 = 0.05 1.4 , forward current versus ambient temperature (=0.5) (1N5820/1N5821). Fig. 5-2: Average forward current
STMicroelectronics
Original

1n5821

Abstract: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier Major , VRMS VDC VRSM IF(AV) IFSM TJ, TSTG 1N5820 20 14 20 24 1N5821 30 21 30 36 3.0 80 - 65 to + 125 1N5822 40 , , 1N5821 & 1N5822 Vishay General Semiconductor Electrical Characteristics TA = 25 °C unless otherwise , condition at 3.0 (1) at 9.4 (1) Symbols VF VF IR 1N5820 0.475 0.850 1N5821 0.500 0.900 2.0 20 , 1N5820 1N5821 40 10 1N5822 Units °C/W Notes: (1) Thermal resistance from junction to lead
Vishay General Semiconductor
Original
J-STD-002B JESD22-B102D

1N5822

Abstract: Lead 500 Units/Bag 1N5821G Axial Lead (Pb-Free) 500 Units/Bag 1N5821RL Axial Lead , ) = 74°C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , value. Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse
ON Semiconductor
Original
Abstract: ) 1N5820 1N5821 20 30 RMS forward current I f (a v ) Average forward current 1N5822 40 3 , °C Tj = 100°C CO < Tj = 25°C Tj = 25°C Forward voltage drop 1N5820 1N5821 1N5822 , : Average forward power dissipation versus average forward current (1N5820/1N5821). 2/5 Fig. 2 , forward current versus ambient temperature (5=0.5) (1N5820/1N5821). IF(av)(A) Fig. 2-2: Average , surge peak forward current versus overload duration (maximum values) (1N5820/1N5821). Fig. 3-2 -
OCR Scan
D0-201 DO-201

1N5822 PACKAGE

Abstract: 1N5821 (Pb-Free) 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821G Axial Lead (Pb-Free) 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5821RLG Axial Lead (Pb-Free , °C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , and best overall value. 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821
ON Semiconductor
Original
half wave rectifier LLC 1N5820G 1N5820RLG 1N5820-G diode 1n5822g

Part Marking STMicroelectronics

Abstract: ST Low Forward Voltage Schottky Diode ) 1N5820 1N5821 1N5822 20 30 40 RMS forward current IF(AV) Average forward current 10 TL , 80 °C/W Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W 1N5820 1N5821 , 1N5820 / 1N5821 P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822 Fig. 1: Average forward power dissipation versus average forward current (1N5820/1N5821). 1.8 PF(av)(W) = 0.1 1.6 = 0.2 = , temperature (=0.5) (1N5820/1N5821). Fig. 2-2: Average forward current versus ambient temperature (=0.5
STMicroelectronics
Original
Part Marking STMicroelectronics ST Low Forward Voltage Schottky Diode forward converter LOW DROP POWER SCHOTTKY RECTIFIER

1NS820

Abstract: 1N5821 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P Designers , design. â'¢MAXIMUM RATINGS Rating Symbol 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P Unit Peak , 25°C unless otherwise noted) (2) Characteristic Symbol 1NS820 1N5821 1N5822 MBR-P Unit , MOUNTING POSITIONS.Any SOLOERING.220°C 1/16" from case for ten seconds 1N5820, 1N5821 , circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5821 operated in
-
OCR Scan
equivalent bc 108c MBR320P-340P schottky rectifier motorola mbr ATID

1N5821

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial , 108 * (0.85) (40) = 74°C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . , indicated by Polarity Band · Marking: 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Please See the Table on the , : 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak
ON Semiconductor
Original

FULL WAVE bridge RECTIFIER CIRCUITS

Abstract: 1N5822 (3). TA(max) = 108 (0.85) (40) = 74°C. *Values given are for the 1N5821. Power is slightly lower , 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier , Marking: 1N5820, 1N5821, 1N5822 CASE 267­03 PLASTIC MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking , ©RectifierInc. 1996 Data Motorola, Device 1 1N5820 1N5821 1N5822 *ELECTRICAL CHARACTERISTICS (TL = 25
Motorola
Original
FULL WAVE bridge RECTIFIER CIRCUITS TP2050 Motorola 1N5820

1N5820

Abstract: 1N5821 SIYU R 1N5820/1N5821/1N5822 PLASTIC SCHOTTKY BARRIER RECTIFIER Features DO-27 ·High Current Capability ·Low Forward Voltage Drop 1.0(25.4) MIN · .052(1.3) DIA .048(1.2 , Electrical Characteristics 1N5821 1N5822 VRRM 20 30 40 V VR(RMS) 14 21 , 1N5820/1N5821/1N5822 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT , Instantaneous Forward Current (A) IF(A) 10mm 1N5822 1N5821 1 0.2 Tj = 25 °C 0.1 0.01
SIYU
Original
1N5820/1N5821/1N5822

n5822

Abstract: diode marking r6j (0.85) (40) = 74°C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of , Low v f Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction 1N5820 1N5821 , Band Marking: 1N 5 8 2 0 ,1N5821, 1 N5822 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS , cycle )- A ta Symbol VRRM V RWM Vr V RSM VR(RMS) 'o 1N5820 20 1N5821 30 , 1N5821 1N5822 ` ELECTRICAL CHARACTERISTICS ( T l = 25°C unless otherwise noted) (2) Characteristic
-
OCR Scan
1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS

1N5821

Abstract: 1N5822 ) 1N5820 1N5821 1N5822 20 30 40 RMS forward current IF(AV) Average forward current 10 TL , °C/W Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W 1N5820 1N5821 1N5822 , use the following equations : P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821 P = 0.33 x IF , current (1N5820/1N5821). 1.8 PF(av)(W) = 0.1 1.6 = 0.2 = 0.5 = 0.05 1.4 =1 , 3.5 1N582x Fig. 2-1: Average forward current versus ambient temperature (=0.5) (1N5820/1N5821).
STMicroelectronics
Original
1N5822 st
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial , 74°C. *Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . , indicated by Polarity Band · Marking: 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Please See the Table on the , /D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak ON Semiconductor
Original

1N5820

Abstract: 1N5820RL TA(max) from equation (3). TA(max) = 108 * (0.85) (40) = 74°C. *Values given are for the 1N5821. , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , , LLC, 2004 December, 2004 - Rev. 6 1 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage , 3.0 Amp) (iF = 9.4 Amp) 1N5821 1N5822 0.380 0.500 0.900 0.390 0.525 0.950 VF
ON Semiconductor
Original

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS 1N5820RLG Axial Lead (Pb-Free) 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821G Axial Lead (Pb-Free) 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5821RLG , (max) from equation (3). TA(max) = 108 * (0.85) (40) = 74°C. *Values given are for the 1N5821. Power , 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , . Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821
ON Semiconductor
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS half bridge LLC inverter 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER
Abstract: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse , ) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5820 20 1N5821 30 1N5822 40 Unit V 24 14 36 21 3.0 48 28 , VF 0.370 0.475 0.850 iR 2.0 20 2.0 20 2.0 20 0.380 0.500 0.900 0.390 0.525 0.950 mA 1N5820 1N5821 1N5822 Unit V http://onsemi.com 2 1N5820, 1N5821, 1N5822 ORDERING INFORMATION Device 1N5820 ON Semiconductor
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half bridge LLC inverter

Abstract: 1N5820 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This , best overall value. Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse , Reverse Current @ Rated dc Voltage (Note 2) TL = 25°C TL = 100°C 1N5821 0.370 0.475 0.850 , ://onsemi.com 2 2.0 20 2.0 20 1N5820, 1N5821, 1N5822 ORDERING INFORMATION Package Shipping
ON Semiconductor
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1N5822 diode data
Abstract: "¢ Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier , MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage , © Motorola, Inc. 1996 â¡ â¡ cD 5 3 a i TT1 ! (M) M O TO R O LA 1N5820 1N5821 , Forward Voltage (1) (ip = 1.0 Amp) (ip = 3.0 Amp) (ip = 9.4 Amp) 1N5821 0.370 0.475 0.850 , the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max),or 1N5821 operated in a 12 -
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