1N5821 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 50 of about 84 for 1N5821 |
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1N5821 |
BeiJing FeiDa Electronics Group Company |
3.3.0 A Schottky Barrier Diode |
269.6 Kb, 2 Pages. |
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1N5821 |
Bytes |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
149.35 Kb, 2 Pages. |
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1N5821 |
Capar Corp. |
Schottky Barrier Rectifiers |
82.45 Kb, 1 Pages. |
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1N5821 |
CEIEC Shenzhen |
Rectifier Diode, Schottky Diode, Single, 30V, DO-27, 2-Pin |
37.22 Kb, 2 Pages. |
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1N5821 |
Codi Semiconductor, Inc. |
3A Schottky Barrier Rectifier |
109.58 Kb, 2 Pages. |
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1N5821 |
Daesan Electronics |
CURRENT 3.0 Amperes VOLTAGE 20 to 40 Volts |
321.6 Kb, 2 Pages. |
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1N5821 |
DC Components Co., Ltd. |
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER |
389.84 Kb, 2 Pages. |
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1N5821 |
Diodes, Inc. |
Short Form Selection Guide |
3107.54 Kb, 129 Pages. |
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1N5821 |
Diodes, Inc. |
3.0A SCHOTTKY BARRIER RECTIFIERS |
49.64 Kb, 2 Pages. |
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1N5821 |
Diotec Electronics Corp. |
Diode, 3A, 30V, Schottky Barrier Rectifier |
56.7 Kb, 2 Pages. |
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1N5821 |
Diotec Semiconductor |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
95.46 Kb, 2 Pages. |
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1N5821 |
Diotec Semiconductor |
Si-Schottky-Rectifiers |
38.74 Kb, 2 Pages. |
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1N5821 |
EIC Semiconductor, Inc. |
SCHOTTKY BARRIER RECTIFIER DIODES |
27.38 Kb, 2 Pages. |
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1N5821 |
Fagor |
30 V, 3 A schottky barrier rectifier |
37.49 Kb, 2 Pages. |
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1N5821 |
Fairchild Semiconductor |
3.0 Ampere Schottky Barrier Rectifiers |
56.42 Kb, 2 Pages. |
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1N5821 |
Fairchild Semiconductor |
Schottky Rectifiers |
40.27 Kb, 3 Pages. |
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1N5821 |
Fairchild Semiconductor |
3.0 Ampere Schottky Barrier Rectifiers |
38.13 Kb, 2 Pages. |
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1N5821 |
FCI Semiconductor |
Diode, 3A, 30V, Barrier Schottky Diode |
118.84 Kb, 1 Pages. |
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1N5821 |
Fema Electronics |
Rectifiers |
179.67 Kb, 2 Pages. |
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1N5821 |
Formosa MicroSemi Co. Ltd. |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
32.37 Kb, 2 Pages. |
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1N5821 |
Fuji Electric Co., Ltd. |
3 AMP SCHOTTKY BARRIER RECTIFIER |
809.41 Kb, 1 Pages. |
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1N5821 |
Galaxy Semi-Conductor Holdings Limited |
SCHOTTKY BARRIER RECTIFIER |
73.37 Kb, 2 Pages. |
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1N5821 |
General Semiconductor, Inc. |
DIODE SCHOTTKY DIODE 30V 3A 2DO-201AD |
19.42 Kb, 2 Pages. |
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1N5821 |
General Semiconductor, Inc. |
SCHOTTKY BARRIER RECTIFIER |
42.93 Kb, 2 Pages. |
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1N5821 |
GOOD-ARK Electronics |
SCHOTTKY BARRIER RECTIFIER |
183.86 Kb, 2 Pages. |
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1N5821 |
HY Electronic Co., Ltd. |
SCHOTTKY BARRIER RECTIFIERS |
33.5 Kb, 2 Pages. |
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1N5821 |
Invac |
30 V, 3 A schottky barrier rectifier |
68.45 Kb, 2 Pages. |
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1N5821 |
Jinan Gude Electronic Device Co., Ltd. |
3.0 Amp. SCHOTTKY BARRIER RECTIFIERS |
142.02 Kb, 2 Pages. |
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1N5821 |
Leshan Radio Company Co., Ltd. |
SCHOTTKY BARRIER DIODES |
51.25 Kb, 2 Pages. |
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1N5821 |
Lite-On Technology Corporation |
30V, 3.0A schottky barrier rectifier |
32.54 Kb, 2 Pages. |
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1N5821 |
Micro Commercial Components |
3 Amp Schottky Barrier Rectifier 20 - 40 Volts |
44.26 Kb, 3 Pages. |
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1N5821 |
Microsemi Corporation |
3 Amp Schottky Rectifier |
99.66 Kb, 2 Pages. |
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1N5821 |
Mospec Semiconductor |
Schottky barrier rectifier |
229.43 Kb, 3 Pages. |
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1N5821 |
Motorola |
European Master Selection Guide 1986 |
42.3 Kb, 1 Pages. |
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1N5821 |
Motorola |
The European Selection Data Book 1976 |
26.53 Kb, 1 Pages. |
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1N5821 |
Motorola / Freescale Semiconductor |
DIODE SCHOTTKY DIODE 30V 3A 2DO-201AD |
121.84 Kb, 8 Pages. |
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1N5821 |
Motorola / Freescale Semiconductor |
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS |
167.98 Kb, 6 Pages. |
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1N5821 |
On Semiconductor |
DIODE SCHOTTKY DIODE 30V 3A 2DO-201AD BAG |
116.21 Kb, 8 Pages. |
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1N5821 |
PanJit Semiconductors |
3 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes) |
54.08 Kb, 2 Pages. |
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1N5821 |
Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER |
24.8 Kb, 2 Pages. |
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1N5821 |
RFE International, Inc. |
Leaded (Thru-Hole): Super Fast & Schottky Rectifiers, Switching Diodes |
107.24 Kb, 1 Pages. |
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1N5821 |
Semikron |
Diode, 3mA, 30V, Schottky Barrier Diode |
66.46 Kb, 2 Pages. |
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1N5821 |
Semikron |
Schottky barrier rectifiers diodes |
131.16 Kb, 2 Pages. |
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1N5821 |
Shanghai Lunsure Electronic |
SCHOTTKY BARRIER RECTIFIER |
166.99 Kb, 2 Pages. |
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1N5821 |
Shanghai Sunrise Electronics |
SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 3.0A |
12.51 Kb, 1 Pages. |
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1N5821 |
STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER |
62.34 Kb, 5 Pages. |
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1N5821 |
STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER |
57.42 Kb, 5 Pages. |
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1N5821 |
Surge Components, Inc. |
3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere |
76.38 Kb, 2 Pages. |
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1N5821 |
SynSemi Semiconductor |
3.0 Amps Schottky Barrier Rectifier |
440.35 Kb, 2 Pages. |
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1N5821 |
Taitron Components |
3A Schottky Barrier Rectifiers |
175.39 Kb, 4 Pages. |
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Datasheets per page: 50 | 250 | 500 |
| Fulltext Datasheet Results |
1 - 50 of about 421 for 1N5821 |
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First line: 1N5822 diode data 1N5822 1N5820 Thru 1N5822 Abstract: .. MAXIMUM RATINGS Characteristic Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Unit. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 20 30 40 V. RMS Reverse Voltage VR .. Tags: 1N5822 1N5822 diode data mospec 1N5820 1N5820 1N5822 |
62.11 Kb |
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First line: marking 34 diode SCHOTTKY Philips 370 n5822* DIODE 1N5822 002^34 Controlled avalanche Schottky 1N5820ID/21ID/22ID barrier diodes AMER PHILIPS/DISC fc^E DESCRIPTION QUICK REFERENCE DATA Schottky barrier diodes hermetically sealed SOD84A Implosion Diode (ID) envelope, intended output voltage, power sw Abstract: .. UNIT Vrrm repetitive peak reverse voltage 1N5820 1N5820 20 V 1N5821 30 V 1N5822 1N5822 40 V Vrwm crest working reverse voltage 1N5820 1N5820 20 V 1N5821 30 V 1N5822 1N5822 40 V Vr continuous reverse voltage 1N5820 1N5820 20 V 1N5821 .. Tags: DIODE 1N5822 n5822* Philips 370 marking 34 diode SCHOTTKY datasheet abstract.. |
204.64 Kb |
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First line: 1N5820-1N5822 1N5820 1N5822 Features Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . Peak Repetitive Reverse Voltage 20 30 40 V. Maximum RMS Voltage 14 21 28 V. DC Reverse Voltage Rated VR 20 30 40 V. Maximum Reverse Current TA = 25 °C @ rated VR TA = 100 °C. 0.5 20. mA mA .. Tags: 1N5820-1N5822 |
38.12 Kb |
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First line: 1N5820 THRU 1N5822 Schottky Barrier Rectifier Volts DO-201AD Abstract: .. 1N5821 --- 30V 21V 30V. 1N5822 1N5822 --- 40V 28V 40V. Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current IF AV 3.0A TA = 85 °C. Peak Forward Surge Current IFSM 80A 8.3ms .. Tags: 1N5820 1N5822 |
44.56 Kb |
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First line: Switching Noise Forward Voltage Drop High Current Capability High Surge Current Capability omponents 20736 Marilla Street Chatsworth Abstract: .. 1N5821 --- 30V 21V 30V. 1N5822 1N5822 --- 40V 28V 40V. Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current IF AV 3.0A TA = 85 °C. Peak Forward Surge Current IFSM 80A 8.3ms .. Tags: 1n5822 1n5820 datasheet abstract.. |
93.81 Kb |
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First line: Switching Noise Forward Voltage Drop High Current Capability High Surge Current Capability Abstract: .. 1N5821 --- 30V 21V 30V. 1N5822 1N5822 --- 40V 28V 40V. Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current IF AV 3.0A TA = 85 °C. Peak Forward Surge Current IFSM 80A 8.3ms .. Tags: 1n5821 datasheet abstract.. |
44.27 Kb |
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First line: 1N5820-D DIODE 1N5822 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers employing Schottky Barrier principle large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation metal overlap contac Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art .. Tags: 1N5820-D DIODE 1N5822 1n5820-22 1N5820 1N5821 1N5822 |
116.2 Kb |
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First line: 1N5820-1N5822 VOLTAGE RANGE Volts CURRENT Amperes Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . CHARACTERISTICS. Maximum Average Reverse Current at Rated DC Blocking Voltage Note 1 V F. SYMBOL. I R. UNITS. mAmps. Volts Maximum Instantaneous Forward Voltage at 9.4A DC Note .. Tags: 1N5820-1N5822 |
42.52 Kb |
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First line: marking JB SCHOTTKY BARRIER DIODE l~lllll|JO UC1IIIWIIUUV1VI9 ocmcmi IPHIN Controlled avalanche Schottky barrier diodes 1N5820ID/21ID/22ID PHILIPS INTERNATIONAL Abstract: .. UNIT Vrrm repetitive peak reverse voltage 1N5820 1N5820 20 V 1N5821 30 V 1N5822 1N5822 40 V Vrwm crest working reverse voltage 1N5820 1N5820 20 V 1N5821 30 V 1N5822 1N5822 40 V Vr continuous reverse voltage 1N5820 1N5820 20 V 1N5821 .. Tags: marking JB SCHOTTKY BARRIER DIODE datasheet abstract.. |
253.95 Kb |
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First line: 1N5820 THRU 1N5822 Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . CHARACTERISTICS. Maximum Average Reverse Current at Rated DC Blocking Voltage Note 1 V F. SYMBOL. I R. UNITS. mAmps. Volts Maximum Instantaneous Forward Voltage at 9.4A DC Note .. Tags: 1N5820 1N5822 |
24.82 Kb |
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First line: 1N5820 THRU 1N5822 Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . CHARACTERISTICS. Maximum Average Reverse Current at Rated DC Blocking Voltage Note 1 V F. SYMBOL. I R. UNITS. mAmps. Volts Maximum Instantaneous Forward Voltage at 9.4A DC Note .. Tags: 1N5820 1N5822 |
24.8 Kb |
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First line: LTV817A* 1N4148 U3 capacitor 100uF/25V LTV817A capacitor 10uF/400V STMicroelectronics: STEVAL-ISA001V1 C5,C6 R7,R8 Part Description Bridge 600V 4.7uF 400V Electrolytic 10uF 400V Electrolytic 22uF Electrolytic 47pF Ceramic 10nF Ceramic 4.7nF 250V Capacitor 680uF Electrolytic 100uF Electrolytic 220uF Abstract: .. 1 D2 1N5821 1N5821 STMicroelectronics A xial DO-201AD DO-201AD TH 1 D3 BYW100-200 BYW100-200 BYW100-200 BYW100-200 STMicroelectronics A. xial DO-15 DO-15 TH. 1 F2 Fuse TR5 0.5A TR5 372 Wickman Radial TH. 1 J1 2 Pos Connector MKDSN 1.5/2 .. Tags: capacitor 10uF/400V capacitor 100uF/25V 1N4148 U3 VIPer12A radial fuse Panasonic Electrolytic Capacitor panasonic electrolytic 400v panasonic ECU Panasonic MKDSN 1.5/4 mkdsn LTV817A* liteon transformer fuu10s 1N4148 1N5821 |
51.94 Kb |
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First line: 1N5820, 1N5821 1N5822 FEATURES Guardring overvoltage protection Very small conduction losses Extremely fast switching forward voltage drop High forward surge capability High frequency operation Abstract: .. Vishay General Semiconductor 1N5820 1N5820 , 1N5821 & 1N5822 1N5822 . Document Number 88526 20-Apr-06 20-Apr-06 . www.vishay.com 1. DO-201AD DO-201AD . Schottky Barrier Rectifier. FEATURES ⢠Guardring for overvoltage protection .. Tags: 1N5822 PACKAGE 1N5820 1N5821 1N5822 |
76.77 Kb |
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First line: 1N5820, 1N5821 1N5822 FEATURES Guardring overvoltage protection Very small conduction losses Extremely fast switching forward voltage drop High forward surge capability High frequency operation Abstract: .. 1N5820 1N5820 , 1N5821 & 1N5822 1N5822 Vishay General Semiconductor. Document Number: 88526 Revision: 20-Aug-07 20-Aug-07 . www.vishay.com 1. Schottky Barrier Rectifier. FEATURES. ⢠Guardring for overvoltage protection .. Tags: 1N5821 1N5820 1N5821 1N5822 |
88.95 Kb |
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First line: 1N5822 data sheet DIODE 1N5822 Part Marking STMicroelectronics 1N582x DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM (max) FEATURES BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial pow Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . VRRM Repetitive peak reverse voltage 20 30 40 V. IF RMS RMS forward current 10 A. IF AV Average forward current TL = 100 °C. Ī“ = 0.5. 3 A. T L = 110 °C Ī“ = 0.5. 3 3 A. I FSM Surge non repetitive .. Tags: Part Marking STMicroelectronics DIODE 1N5822 1N5822 data sheet 1N582x 1N5820 1N5821 1N5822 |
62.45 Kb |
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First line: 1N582x DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM (max) FEATURES BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited Switch Mode Power Supplies high fre Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . VRRM Repetitive peak reverse voltage 20 30 40 V. IF RMS RMS forward current 10 A. IF AV Average forward current TL = 100 °C. Ī“ = 0.5. 3 A. T L = 110 °C Ī“ = 0.5. 3 3 A. I FSM Surge non repetitive .. Tags: 1N582x 1N5820 1N5821 1N5822 |
62.34 Kb |
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First line: 1N5820 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features Schottky Barrier Chip Guard Ring Construction Transient Protection Power Loss, High Efficiency High Surge Capability High Current Capability Forward Voltage Drop Voltage, High Frequency Inverters, Free Wheeling, Polarity Protection Application Abstract: .. Characteristic Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Unit. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 20 30 40 V. RMS Reverse Voltage VR RMS 14 21 28 .. Tags: 1N5820 1N5822 |
40.27 Kb |
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First line: 1N5820 THRU 1N5822 AMPERE SCHOTTKY BARRIER RECTIFIER VOLTAGE Volts CURRENT Amperes FEATURES High surge current capability Plastic package Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound High current operation ampere TL=95 Exceeds environment Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 UNITS. Maximum Recurrent Peak Reverse Voltage 20 30 40 V. Maximum RMS Voltage 14 21 28 V. Maximum DC Blocking Voltage 20 30 40 V. Maximum Average Forward Rectified Current 3/8ā Lead .. Tags: 1N5820 1N5822 1N5821 |
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First line: 1N5820-E thru 1N5822-E 1.Feature Dimensions Plastic package Underwriters Laboratory Flammability Classification 94V-0 power loss,high efficiency voltage high frequency inverters, free wheeling,and polarity protection applications Guarding overvoltage protection High temperature soldering guaranteed: Abstract: .. 1N5820-E 1N5820-E 1N5821-E 1N5822-E 1N5822-E . 1N5820-E 1N5820-E 1N5821-E 1N5822-E 1N5822-E . 4. Characteristic Curves. TA = 25 °C unless otherwise noted Fig. 1 ā Forward Current Derating Curve Fig. 2 ā Maximum Non-repetitive Peak .. Tags: 1N5820-E 1N5822-E |
147.15 Kb |
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First line: 1N5820 thru 1N5822 1.Feature Dimensions Plastic package Underwriters Laboratory Flammability Classification 94V-0 power loss,high efficiency voltage high frequency inverters, free wheeling,and polarity protection applications Guarding overvoltage protection High temperature soldering guaranteed: 260 Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . 1N5820 1N5820 thru 1N5822 1N5822 . 1N5820 1N5820 1N5821 1N5822 1N5822 . 80. 50. ā40 to +125. 20 30 40. 14 21 28. 20 30 40. 3.0. Schottky Barrier Rectifiers. Reverse Voltage 20 to 40V Forward Current 3.0A. LESHAN RADIO .. Tags: 1N5820 1N5822 |
146.19 Kb |
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First line: 1N5822 201 1N5820 1N5822 1N5820 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2008-01-22 Nominal current Nennstrom 4.5±0.1 Abstract: .. 1N5821 30 30 < 0.90. 1N5822 1N5822 40 40 < 0.95. Max. average forward rectified current, R-load. Dauergrenzstrom in Einwegschaltung mit R-Last. T. A. = 75 °C I. FAV. 3 A. 2. Repetitive peak forward current. Periodischer .. Tags: 1N5822 201 1N5820 1N5822 |
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First line: 1N5820 thru 1N5822 SCHOTTKY BARRIER RECTIFIERS AMPERES 20-40 VOLTS Mechanical Data: *Case:JEDEC DO-201AD Molded Plastic *Polarity:Colar Band Denotes Cathode *Weight:1.1grams *Mounting Positon: DO-201AD Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . 1N5820 1N5820 1N5821 1N5822 1N5822 . http://www.weitron.com.tw. FIG.4 - MAXIMUM NON-REPETITIVE S URGE CURRENT. NUMBER OF CYCLES AT 60 Hz. PE AK. F O. RW. A R D. SU. RG E. C U. R R EN. T , AM. PERES. 1 5 10 50 10 0 2 .. Tags: 1N5820 1N5822 |
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First line: CRSH2-4 CRSH2-3 Schottky Rectifiers Amperes Volts (AMPS) (OC) IFSM (AMPS) CASE DO-41 DO-15 DO-201 VRRM (VOLTS) 1N5817 CRSH1-2 CRSH2-2 1N5820 1N5818 CRSH1-3 CRSH2-3 1N5821 Abstract: .. -201 AD VRRM VOLTS 20 1N5817 1N5817 CRSH1-2 CRSH2-2 1N5820 1N5820 30 1N5818 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 1N5819 CRSH1-4 CRSH2-4 1N5822 1N5822 50 CRSH1-5 CRSH2-5 60 CRSH1-6 vf max @ if = io 20V 0.45V MAX @ 1 .OA 0.50V MAX .. Tags: CRSH2-3 CRSH2-4 datasheet abstract.. |
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First line: ba148 BA145 diode BY207 BY210 Diode ba145 Soft Recovery VRRM (Volts) ^Case Average rectified forward current (Amperes) 59-04 Abstract: .. Vp >FM - 'o 1n5817 1n5817 1n5818 1n5818 100 90 125 0.50 mbr120p mbr120p mbr130p mbr130p 100 90 125 0.65 1n 5820 1n5821 250 95 125 0.50 mbr320p mbr320p mbr330p mbr330p 250 95 125 0.60 mbr320m mbr320m mbr330m mbr330m mbr335m mbr335m 500 90 125 0.45 @ 5a 8-4 Soft RE3covery .. Tags: ba145 BY210 Diode BY207 BA145 diode ba148 datasheet abstract.. |
45.01 Kb |
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First line: BR1 400V fuu10s CVP11 Quantity Reference Description 600V; bridge 4.7pF/400V electrolytic 10(jF/400V electrolytic 22(jF/25V electrolytic 47pF ceramic 0.01MF 0.01MF 4.7nF/250V Abstract: .. 220|jF/25V electrolytic 1 C11 O.ljiF 250V 250V boxcap 1 D1 1N4148 1N4148 1 D2 1N5821 1 D3 STMicroelectronics BYW100-200 BYW100-200 1 D4 Not Used 1 F2 0.5A Fuse J1, J2 Connectors 1 L1 Compostar 2x45m 2x45m H FUU10S-V24503-Q22650 FUU10S-V24503-Q22650 .. Tags: CVP11 fuu10s BR1 400V datasheet abstract.. |
60.25 Kb |
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First line: 1N5820 1N5822 1N5820 1N5822 Schottky Barrier Rectifier Diodes Version 2010-06-01 Nominal current Nennstrom 4.5+0.1 -0.3 Abstract: .. 1N5821 30 30 < 0.90. 1N5822 1N5822 40 40 < 0.95. Max. average forward rectified current, R-load. Dauergrenzstrom in Einwegschaltung mit R-Last. T. A. = 75 °C I. FAV. 3 A. 1. Repetitive peak forward current. Periodischer .. Tags: 1N5820 1N5822 |
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First line: 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers employing Schottky Barrier principle large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation metal overlap contact. Ideally suited rect Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metalātoāsilicon power diode. Stateāofāthe .. Tags: 1N5820 1N5821 1N5822 |
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First line: 10 Ampere Schottky bridge "Power Diode" rectifier diode assembly half bridge LLC inverter 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers This series employs Schottky Barrier principle large area metal-to-silicon power diode. State-of- Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal to silicon power diode. State .. Tags: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS half bridge LLC inverter rectifier diode assembly "Power Diode" 10 Ampere Schottky bridge 1N5820 1N5821 1N5822 |
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First line: half bridge LLC inverter 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers This series employs Schottky Barrier principle large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation metal o Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal to silicon power diode. State .. Tags: half bridge LLC inverter 1N5820 1N5821 1N5822 |
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First line: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5820 THRU 1N5822 VOLTAGE: CURRENT: 3.0A Abstract: .. RATINGS 1N5820 1N5820 1N5821 1N5822 1N5822 . 20 30 40. 14 21 28. 20 30 40. IF AV 3.0. IR. 2.0 10.0. A. IFSM 80 A. 250 40. -65 to +125. 0.475 0.5 0.525. TECHNICAL SPECIFICATION. DO - 201AD 201AD . Dimensions in inches and millimeters .. Tags: DIODE 1N5822 blocking 1N5820 1N5822 |
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First line: 1203 transistor Revision 5/25/2000 Single Anode General Description LB340 Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 . Die Sort 43. 0.38. 1.6. @ 3 Amperes, 25 C VFMAX 0.465 0.46 Volt 0 @ 9.4 Amperes, 25 C. 0 VFMAX 0.85 0.84 Volt. Maximum Junction Capacitance at 0V, 1MHz: Cj MAX pF. DC Blocking Voltage .. Tags: 1203 transistor 1203 LB340 |
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First line: 1N5820 THRU 1N5822 AMPS. Schottky Barrier Rectifiers Features forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: DO-201AD Molded Plastic Epoxy: 94V-0 rate flame retardant Lead: Axial leads, solderable MIL-STD-202, Method guaranteed Pola Abstract: .. Type Number 1N5820 1N5820 1N5821 1N5822 1N5822 Units. Maximum Recurrent Peak Reverse Voltage 20 30 40 V. Maximum RMS voltage 14 21 28 V. Maximum DC Blocking Voltage 20 30 40 V. Maximum Average Forward Rectified Current .. Tags: schottky barrier rectifiers 1N5820 1N5822 1N5821 |
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First line: 12v 5A smps ZTX107 transistor 24v 5a smps ZTX107 Isolating High Side Switch Thermal Printer SMPS 2.5W +12V 60µH Abstract: .. 1N5821. Figure 1 LT1170 LT1170 Effected Boost Converter Circuit using a ZTX949 ZTX949 to Isolate Supply. .. Tags: 24v 5a smps ZTX107 transistor 12v 5A smps ZTX949 ZTX107 smps isolated 12v output SAT INDUCTOR LT1170* isolate "P-Channel MOSFETs" Zetex - DN33 - Isolating high side switch for thermal printer SMPS |
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First line: omponents 20736 Marilla Street Chatsworth Abstract: .. 1N5821 30V 21V 30V. 1N5822 1N5822 40V 28V 40V. Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current IF AV 3.0A TA = 85 °C. Peak Forward Surge Current IFSM 80A 8.3ms, half .. Tags: datasheet abstract.. |
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First line: 1N5820-1N5822 1N5820 1N5822 Features ampere operation 95°C with thermal runaway. voltage, high frequency inverters free wheeling, polarity protection applications. Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . VF Forward Voltage @ 3.0 A. @ 9.4 A. 475 850. 500 900. 525 950. mV mV. IR Reverse Current @ rated VR TA = 25 °C. TA = 100 °C. 0.5 20. mA mA. CT Total Capacitance. V R = 4.0 V, f = 1.0 MHz. 190 pF. Thermal Characteristics .. Tags: 1N5820-1N5822 |
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First line: DIODE 1N5822 POWER SEMICONDUCTORS 1N5820 1N5822 Abstract: .. Characteristic Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Unit. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 20 30 40 V. RMS Reverse Voltage VR RMS 14 21 28 .. Tags: DIODE 1N5822 1N5820 1N5822 |
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First line: 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers This series employs Schottky Barrier principle large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation metal overlap contact. Ideally s Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art .. Tags: 1N5820 1N5821 1N5822 |
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First line: 1N5820 1N5822 3.0A SCHOTTKY BARRIER RECTIFIER Abstract: .. Characteristic Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Unit. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 20 30 40 V. RMS Reverse Voltage VR RMS 14 21 28 .. Tags: 1N5820 1N5822 |
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First line: 1N5820, 1N5821, 1N5822 1N5820 1N5822 Preferred Devices Axial Lead Rectifiers This series employs Schottky Barrier principle large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation metal overlap contact. Ideally s Abstract: .. 1N5820 1N5820 , 1N5821, 1N5822 1N5822 1N5820 1N5820 and 1N5822 1N5822 are Preferred Devices. Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art .. Tags: 1N5820 1N5821 1N5822 |
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First line: VOLTAGE RANGE Volts CURRENT Ampere switching noise forward voltage drop High current capability High switching capabitity High surge capabitity High reliability Case: Molded plastic Epoxy: Device flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Weight: 1 Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . 1N5820 1N5820 1N5821 1N5822 1N5822 . 20 30 40. 14 21 28. 20 30 40. -55 to + 150 0 C. 0. C/W. NOTES : 1. Me. 3. Thermal Resistance : At 9.5mm lead lengths, PCB mounted. 4. Measured at Pulse Width 300mS 300mS ,Duty .. Tags: datasheet abstract.. |
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First line: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage Volts Forward Current Amperes DO-201AD Abstract: .. 1N5820 1N5820 1N5821 1N5822 1N5822 . 20 30 40. 14 21 28. 3.0. 80. 0.475 0.500 0.525. 2.0 . 20.0. 250. 40 . 10. -65 to +125. UNITS .. 1N5820 1N5820 1N5821 1N5822 1N5822 .. Tags: 1N5822 PACKAGE 1N5820 1N5822 |
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First line: 1N5820-D FULL WAVE RECTIFIER CIRCUITS THERMAL RUNAWAY IN RECTIFIER FULL WAVE RECTIFIER CIRCUITS Designer's Order this document 1N5820/D Abstract: .. part number ā Polarity: Cathode indicated by Polarity Band ā Marking: 1N5820 1N5820 , 1N5821, 1N5822 1N5822 . MAXIMUM RATINGS. Rating Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Unit. Peak Repetitive Reverse Voltage Working .. Tags: FULL WAVE RECTIFIER CIRCUITS THERMAL RUNAWAY IN RECTIFIER 1N5820-D FULL WAVE RECTIFIER CIRCUITS 1N5820 |
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First line: 1N5820 1N5822 Volts Ampere High current capability High surge current capability High reliability High efficiency power loss cost forward voltage drop Abstract: .. SYMBOL 1N5820 1N5820 1N5821 1N5822 1N5822 UNIT. Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 V. Maximum RMS Voltage VRMS 14 21 28 V. Maximum DC Blocking Voltage VDC 20 30 40 V. Maximum Average Forward Current .. Tags: 1N5820 1N5822 |
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First line: 1N5820 1N5822 Volts Ampere High current capability High surge current capability High reliability High efficiency power loss cost forward voltage drop RoHS Free Abstract: .. SYMBOL 1N5820 1N5820 1N5821 1N5822 1N5822 UNIT. Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 V. Maximum RMS Voltage VRMS 14 21 28 V. Maximum DC Blocking Voltage VDC 20 30 40 V. Maximum Average Forward Current .. Tags: 1N5820 1N5822 |
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First line: 1N5820 THRU 1N5822 AMPS. Schottky Barrier Rectifiers Voltage Range Volts Current Amperes Abstract: .. For capacitive load, derate current by 20% Type Number Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Units. Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 V. Maximum RMS Voltage. VRMS 14 21 28 V. Maximum DC Blocking .. Tags: 1N5820 1N5822 |
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First line: Schottky Barrier 3A Schottky Barrier Rectifiers 1N5820 -1N5822 Schottky Barrier Rectifiers Guardring overvoltage protection Very small conduction losses Extremely fast switching forward voltage drop High forward surge capability High frequency operation voltage, high frequency inverters Solder secon Abstract: .. Symbol Description 1N5820 1N5820 1N5821 1N5822 1N5822 Unit Conditions. VRRM. Maximum Repetitive Peak Reverse Voltage 20 30 40 V. VRMS Maximum RMS Voltage 14 21 28 V. VDC Maximum DC Blocking Voltage 20 30 40 V. VRSM .. Tags: Schottky Barrier 3A schottky barrier rectifiers 1N5822 PACKAGE 1N5820 |
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First line: r1045 r1045* SWITCHMODE Schottky Power Rectifiers with high speed forward voltage drop characteristic Schottky's metal/silicon junctions produced with ruggedness temperature performance comparable silicon-junction rectifiers. Ideal voltage, high frequency power supplies very fast clamping diodes, th Abstract: .. T0220AB T0220AB * 20 1N5817 1N5817 1N5820 1N5820 MBR320 MBR320 BYS08-20 BYS08-20 30 MBR030 MBR030 1N5818 1N5818 1N5821 MBR330 MBR330 BYS08-30 BYS08-30 35 MBR735 MBR735 MBR1035 MBR1035 MBR1535CT MBR1535CT 40 MBR040 MBR040 1N5819 1N5819 1N5822 1N5822 MBR340 MBR340 45 BYS08-45 BYS08-45 MBR745 MBR745 MBR1045 MBR1045 MBR1545CT MBR1545CT 50, 60 MI3R350 MI3R350 .. Tags: r1045* r1045 datasheet abstract.. |
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First line: 1N5820 1N5822 AMPS. Schottky Barrier Rectifiers DO-201AD power loss, high efficiency. High current capability, High reliability High surge current capability. Epitaxial construction. Guard-ring transient protection. voltage, high frequency inventor, free wheeling, polarity protection application. Abstract: .. For capacitive load, derate current by 20% Type Number Symbol 1N5820 1N5820 1N5821 1N5822 1N5822 Units. Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 V. Maximum RMS Voltage VRMS 14 21 28 V. Maximum DC Blocking .. Tags: 1N5820 1N5822 |
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First line: 1N5820 THRU 1N5822 AMPS. Schottky Barrier Rectifiers Voltage Range Volts Current Amperes Abstract: .. For capacitive load, derate current by 20% Type Number 1N5820 1N5820 1N5821 1N5822 1N5822 Units. Maximum Recurrent Peak Reverse Voltage 20 30 40 V. Maximum RMS Voltage 14 21 28 V. Maximum DC Blocking Voltage 20 .. Tags: 1N5820 1N5822 |
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First line: 1N5820 thru 1N5822 formerly General Semiconductor Abstract: .. TA = 25 °C unless otherwise noted Parameter Symbols 1N5820 1N5820 1N5821 1N5822 1N5822 Units. * Maximum repetitive peak reverse voltage VRRM 20 30 40 V. Maximum RMS voltage VRMS 14 21 28 V. * Maximum DC blocking .. Tags: 1N5820 1N5822 |
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